JPS63312655A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS63312655A JPS63312655A JP14936587A JP14936587A JPS63312655A JP S63312655 A JPS63312655 A JP S63312655A JP 14936587 A JP14936587 A JP 14936587A JP 14936587 A JP14936587 A JP 14936587A JP S63312655 A JPS63312655 A JP S63312655A
- Authority
- JP
- Japan
- Prior art keywords
- logic
- regions
- cells
- cell
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000003111 delayed effect Effects 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路に関し、特にゲートアレイ方式
で設計される半導体集積回路に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit, and particularly to a semiconductor integrated circuit designed using a gate array method.
従来のゲートアレイ方式による半導体集積回路では、第
2図に示すように、半導体基板11上に論理セル4が複
数個配列されている論理セル領域2.3と、論理セル領
域2,3に隣接して配#J!領域5a 、6..7.と
があるという形で構成され、この配線領域5..6..
7.には、論理セル間を接続する信号線8.9が形成さ
れている。In a semiconductor integrated circuit using a conventional gate array method, as shown in FIG. And then #J! Area 5a, 6. .. 7. This wiring area 5. .. 6. ..
7. A signal line 8.9 is formed to connect between the logic cells.
上述した従来の半導体集積回路では、論理セルと論理セ
ルを信号線で接続することで論理回路を構成していたの
で、論理の構成上、特定の信号に遅延時間を必要とする
場合、特別な遅延機能を有さないため論理セルを必要な
数だけ挿入し、個々の遅延時間を利用して遅延時間を作
り出していた。従って、論理セルの使用率を高めて配線
性の悪化、論理機能の低下及び消費電力の増大を招くと
いう欠点がある。In the conventional semiconductor integrated circuits mentioned above, logic circuits are constructed by connecting logic cells with signal lines, so if a specific signal requires a delay time due to the logic structure, a special Since it does not have a delay function, the required number of logic cells are inserted and each delay time is used to create a delay time. Therefore, there is a drawback that the usage rate of logic cells is increased, resulting in poor wiring, a decrease in logic function, and an increase in power consumption.
本発明の半導体集積回路は、半導体基板上に複数のセル
トランジスタから成る複数の論理セルを配列する論理セ
ル領域と、該論理セル領域に隣接して設けられ前記論理
セル領域と区分される配線領域とを備える半導体集積回
路において、前記配線領域内に配設される複数の単位負
荷容量を有している。The semiconductor integrated circuit of the present invention includes a logic cell region in which a plurality of logic cells each composed of a plurality of cell transistors are arranged on a semiconductor substrate, and a wiring region provided adjacent to the logic cell region and separated from the logic cell region. A semiconductor integrated circuit comprising a plurality of unit load capacitances arranged within the wiring region.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例の平面図である。FIG. 1 is a plan view of one embodiment of the present invention.
第1図に示すように、半導体基板1上にそれぞれが2個
のセルトランジスタ11.12から成る複数の論理セル
4を配列した論理セル領域2.3と、論理セル領域2.
3に隣接して論理セル領域と区分して設けられた配線領
域6.7.8と、配線領域6,7.8にそれぞれの論理
セル4と並んで形成された単位負荷容量10とを含む。As shown in FIG. 1, a logic cell area 2.3 in which a plurality of logic cells 4 each consisting of two cell transistors 11.12 are arranged on a semiconductor substrate 1;
3, and unit load capacitances 10 formed in the wiring areas 6 and 7.8 in line with the respective logic cells 4. .
このように構成することにより、論理回路設計上、論理
信号に遅延時間が必要な場合には、遅延の対象となる論
理セル4aに必要な数の単位負荷容量を負荷容量線13
で接続して所要の信号遅延時間を作ることができる。With this configuration, when a logic signal requires a delay time due to the logic circuit design, the load capacitance line 13 can provide the necessary number of unit load capacitances for the logic cells 4a to be delayed.
can be connected to create the required signal delay time.
従って、論理信号の遅延のために他の論理セルを使用す
ることを要しない。Therefore, it is not necessary to use other logic cells to delay logic signals.
以上説明したように本発明は、論理を構成する論理セル
が配列されている論理セル領域に隣接する配線領域に単
位負荷容量を複数個有することにより、論理信号に遅延
時間を与えることができ、従って、論理セル使用率を高
めないので、配線性の悪化、論理機能の低下及び消費電
力の増大を防止できるという効果がある。As explained above, the present invention can provide a delay time to a logic signal by having a plurality of unit load capacitances in a wiring area adjacent to a logic cell area where logic cells constituting the logic are arranged. Therefore, since the logic cell usage rate is not increased, there is an effect that deterioration of wiring performance, deterioration of logic function, and increase in power consumption can be prevented.
第1図は本発明の一実施例の平面図、第2図は従来の半
導体集積回路の一例の平面図である。
1.1.・・・半導体基板、2,3・・・論理セル領域
、4,4.・・・論理セル。5.5..6,6.。
7.7.・・・配線領域、8,9・・・信号線、10・
・・単位負荷容量、11.12・・・セルトランジスタ
、13・・・負荷容量線、14.15・・・信号線。FIG. 1 is a plan view of an embodiment of the present invention, and FIG. 2 is a plan view of an example of a conventional semiconductor integrated circuit. 1.1. . . . Semiconductor substrate, 2, 3 . . . Logic cell area, 4, 4. ...Logic cell. 5.5. .. 6,6. . 7.7. ... Wiring area, 8, 9... Signal line, 10.
...Unit load capacitance, 11.12...Cell transistor, 13...Load capacitance line, 14.15...Signal line.
Claims (1)
論理セルを配列する論理セル領域と、該論理セル領域に
隣接して設けられ前記論理セル領域と区分される配線領
域とを備える半導体集積回路において、前記配線領域内
に配設される複数の単位負荷容量を有することを特徴と
する半導体集積回路。A semiconductor integrated circuit comprising a logic cell area in which a plurality of logic cells each composed of a plurality of cell transistors are arranged on a semiconductor substrate, and a wiring area provided adjacent to the logic cell area and separated from the logic cell area, A semiconductor integrated circuit comprising a plurality of unit load capacitances arranged within the wiring area.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14936587A JPS63312655A (en) | 1987-06-15 | 1987-06-15 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14936587A JPS63312655A (en) | 1987-06-15 | 1987-06-15 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63312655A true JPS63312655A (en) | 1988-12-21 |
Family
ID=15473547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14936587A Pending JPS63312655A (en) | 1987-06-15 | 1987-06-15 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63312655A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02244669A (en) * | 1988-12-28 | 1990-09-28 | Nec Corp | Integrated circuit |
-
1987
- 1987-06-15 JP JP14936587A patent/JPS63312655A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02244669A (en) * | 1988-12-28 | 1990-09-28 | Nec Corp | Integrated circuit |
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