JPS63310505A - Tin oxide membrane for transparent electrode - Google Patents
Tin oxide membrane for transparent electrodeInfo
- Publication number
- JPS63310505A JPS63310505A JP62147497A JP14749787A JPS63310505A JP S63310505 A JPS63310505 A JP S63310505A JP 62147497 A JP62147497 A JP 62147497A JP 14749787 A JP14749787 A JP 14749787A JP S63310505 A JPS63310505 A JP S63310505A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- domains
- transparent electrode
- tin oxide
- sno2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910001887 tin oxide Inorganic materials 0.000 title claims abstract description 14
- 239000012528 membrane Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910052783 alkali metal Inorganic materials 0.000 claims description 9
- 150000001340 alkali metals Chemical class 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 238000000059 patterning Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 229910052708 sodium Inorganic materials 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 abstract 1
- 150000003606 tin compounds Chemical class 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 210000001691 amnion Anatomy 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
零発用は光エネルギを直接電気エネルギに変換する光起
電力装置ｉｌｌ等の透明電極用酸化錫膜に関する。DETAILED DESCRIPTION OF THE INVENTION (a) The industrial application field relates to tin oxide films for transparent electrodes of photovoltaic devices, etc., which directly convert light energy into electrical energy.
（ロ）従来の技術
第６図及び第４図は特開昭５８−４８９７２号公鍜に見
られる透明電極１妙で用いた光起電力装と
置示す上面図及び断面図である。（１）は透明基板、＾
（２ａ）〜（２Ｃ）は該基板の表面に分割配置された酸
化錫（Ｓｎ（Ｃ）や酸化インジウム（ｌｎｚＯＳ）から
成る透Ｅ！Ａ１！極であり、当該１！極は基板（１）上
に全面に形成された後、エツチングにより基板（１）の
一端縁に延びる延長部（２ａｅ）〜（２ｃｅ）を有する
形状にパターニングされる。（３）は透明電極（２ｍ）
〜（２０）の延長部（ｌｌｅ） 〜（２ｃｅ）を除く部
分に積層被着されたアモルファスシリコン系の半導体活
性層、（４ａ）〜（４Ｃ）は該半導体活性層を挾んで透
明電極（２ａ）〜（２ｃ）と対向して分割配置されたア
ルミニクム（ＡＡ）、チタン（Ｔｉ）等から成る金属電
極であり、当該電極は基板（１）の一端縁に延びる延長
部（４ａｅ）〜（４ｃｅ）を備える。そして、透明電極
（２ｍ）（２ｂ）の延長部（２ａｅ）（２ｂｅ） と
金属電極（４ｂ）（４ｃ）の延長部（４ｂｅ）（４ｃｅ
）とが夫々電気的に接続されることによって隣接し九光
亀変換素子（５ｍ）〜（５Ｃ）は直列接続となり、その
発電出力は左端の金属電極（４ａ）の延長部（４ａｅ）
と石噛の透明電極（２Ｇ）の延長部（２ｃｅ）との同か
ら収り出される。(B) Prior Art FIGS. 6 and 4 are top and cross-sectional views showing a photovoltaic device used in the transparent electrode 1 shown in Japanese Unexamined Patent Publication No. 58-48972. (1) is a transparent substrate, ^ (2a) to (2C) are transparent E!A1! electrodes made of tin oxide (Sn(C) or indium oxide (lnzOS)) dividedly arranged on the surface of the substrate; 1! After the electrode is formed on the entire surface of the substrate (1), it is patterned by etching into a shape having extensions (2ae) to (2ce) extending to one edge of the substrate (1). (3) is a transparent electrode. Electrode (2m)
The amorphous silicon semiconductor active layer (4a) to (4C) is laminated and deposited on the parts excluding the extended portion (lle) of ~(20) ~(2ce), and the transparent electrode (2a) is sandwiched between the semiconductor active layer. ) to (2c) are metal electrodes made of aluminum (AA), titanium (Ti), etc., which are divided and arranged opposite to the extension parts (4ae) to (4ce) extending to one end edge of the substrate (1). ). Then, the extension parts (2ae) (2be) of the transparent electrodes (2m) (2b) and the extension parts (4be) (4ce) of the metal electrodes (4b) (4c).
) are electrically connected to each other, the adjacent Kukoki conversion elements (5m) to (5C) are connected in series, and the power generation output is the extension of the leftmost metal electrode (4a) (4ae).
and the extension part (2ce) of Ishigami's transparent electrode (2G).
（う 発明が解決しようとする問題点
所る光起電力装置における透明電極（２ａ）〜（２Ｃ）
は、上述の如く基板（１）の−表面全面に被着形成され
た後、所定の形状にパターニングされる。ここで、透明
電極（２ａ）〜（２Ｃ）としてのＩｎ２Ｏ３は塩酸等の
酸で容易にエツチングされるのでパターニングが簡単で
あるものの、化学的に不安定で返り、また価格的にも高
価な材料である。(U) Transparent electrodes (2a) to (2C) in a photovoltaic device that have problems to be solved by the invention
is deposited on the entire surface of the substrate (1) as described above, and then patterned into a predetermined shape. Here, In2O3 as the transparent electrodes (2a) to (2C) can be easily etched with an acid such as hydrochloric acid, so patterning is easy, but it is chemically unstable and unstable, and is also an expensive material. It is.
そこで、透明電極（２亀）〜（２Ｃ）としては、化学的
に安定で安価な５ｎ（Ｃが用いられるようになってきた
。しかし乍ら、５ｎ０２は上述のように化学的に安定で
あるため、エツチングによるパターニングを行なった際
、除去すべき部分に若干の５ｎ０２が基板山上に残存し
てしまう場合がある。Therefore, 5n (C), which is chemically stable and inexpensive, has been used as transparent electrodes (2 turtles) to (2 C).However, as mentioned above, 5n02 is chemically stable. Therefore, when patterning is performed by etching, some 5n02 may remain on the substrate ridge in the portion to be removed.
従って、光起電力装置にあっては、不所望な短絡状患が
生じ、出力特性の劣化を生せしめる虞れがある。Therefore, in the photovoltaic device, there is a possibility that an undesired short-circuit-like problem may occur, resulting in deterioration of the output characteristics.
そこで、本発明の目的は５ｎ０２のパターニング時にお
ける５ｎ０２の不所望な残存による悪影響を防止するこ
とにある。Therefore, an object of the present invention is to prevent the adverse effects caused by the undesired residual of 5n02 during patterning of 5n02.
に）問題点を解決するための羊膜
本発明は基板上に形成された後所定形状にパターニング
されて透明電極として用いられる酸化錫膜において、上
記基板と接する側にアルカリ金属を含む領域を形成した
ことを特徴とする。B) Amniotic Membrane for Solving Problems The present invention is a tin oxide film that is formed on a substrate and then patterned into a predetermined shape to be used as a transparent electrode, in which a region containing an alkali metal is formed on the side in contact with the substrate. It is characterized by
（ホ）作 用
アルカリ金属を含む酸化錫膜は非常に大きな抵抗を持つ
。従って、パターニングの際に残存した酸化錫Ｓは短絡
等の電気悪影響を及ぼさない。(e) Action A tin oxide film containing an alkali metal has extremely high resistance. Therefore, the tin oxide S remaining during patterning does not have any adverse electrical effects such as short circuits.
（へ）実施例
第１図は本発明の酸化錫膜を上述の光起電力装置に適用
した実施例を示す断面図である。なお、第４図と同一部
分には同一番号を付して説明を省略する。(f) Example FIG. 1 is a sectional view showing an example in which the tin oxide film of the present invention is applied to the above-mentioned photovoltaic device. Note that the same parts as in FIG. 4 are given the same numbers and their explanations will be omitted.
本発明の特徴は酸化錫（Ｓｎ０２）膜から成る透明電極
（２０ｍ）〜（２０Ｃ）にあり、該透明電極は基板（１
）側に形成されたナトリウム（ＮＩＬ）やカリクム■等
のアルカリ金属を１〜数％程度含む５ｎ０２から成る第
１領＊（２１ｍ） 〜（２１Ｃ）と５ｎ０２のみから成
る第２領＊（２２＆）〜（２２Ｃ）とから成る。The feature of the present invention is the transparent electrodes (20m) to (20C) made of tin oxide (Sn02) film, and the transparent electrodes are made of a substrate (1
) side formed on the first region * (21m) consisting of 5n02 containing about 1 to several percent of alkali metals such as sodium (NIL) and calicum ■ (21C) and the second region * (22 &) consisting only of 5n02 It consists of ~(22C).
祈る第１領域（２１ｍ） 〜（２１Ｃ）及び第２領域（
２２＠） 〜（２２Ｃ） から成る透明電極（２０ｍ）
〜（２ＱＣ） は、基板（１）として１０〜２０％の
Ｎａを含むソーダガラスを用い、該基板上にテトツメチ
ル錫（（ＣＨｓ）ｉｓｎ）等の有機錫化合物の４００〜
５００℃の渥度での熱ＣＶＤ法により５ｎ０２を析出す
ることＫより形成される。これにより、基板（１）側に
は基板（１）内に含まれるＮａが熱拡牧した第１領域（
２１＆）〜（２１０）が形成され、その上ＫＳｎ０２の
みの第２領域（２２＆） 〜（２２Ｃ）が形成される。1st area to pray (21m) ~ (21C) and 2nd area (
Transparent electrode (20m) consisting of 22@) ~ (22C)
~(2QC) uses soda glass containing 10 to 20% Na as the substrate (1), and 400 ~
It is formed from K by depositing 5n02 by thermal CVD at a temperature of 500°C. As a result, on the substrate (1) side, the first region (
21&) to (210) are formed, and second regions (22&) to (22C) of only KSn02 are formed thereon.
第２図は上記方＆により、ソーダガラスから成る基板（
１）上に種々の厚さの透明電極（２０ｍ）〜（２Ｑｃ）
を形成した場合の透明電極（２（Ｄ）〜（２０Ｃ）
のシート抵抗値を示す特性図である。Figure 2 shows a substrate made of soda glass (
1) Transparent electrodes of various thicknesses (20m) to (2Qc) on top
Transparent electrodes (2(D) to (20C) when forming
FIG. 2 is a characteristic diagram showing the sheet resistance value of
同図実線から明らかなように、１０００Ａ以下の場合、
シート抵抗値は４（ＫΩ／口）以上の非常に高い値とな
抄、約４０００Ａ以上とすれば、シート抵抗値は７０（
Ω／口）以下と低くできる。As is clear from the solid line in the figure, in the case of 1000A or less,
If the sheet resistance value is a very high value of 4 (KΩ/unit) or more, and it is about 4000A or more, the sheet resistance value is 70 (
It can be as low as Ω/mouth) or less.
従って、透明電極（２０ｍ） 〜（２０Ｃ）の第１領域
（２１ｍ） 〜（２１Ｃ） の厚さは１０００Ａ程度
以下でで良く、また第１領域（２１ｍ） 〜（２１Ｃ）
及び第２饋［（２２＆）〜（２２Ｃ）の両者を合わせた
厚さは約４０００Ａ以上あれば良い。Therefore, the thickness of the first region (21m) to (21C) of the transparent electrode (20m) to (20C) may be approximately 1000A or less, and the thickness of the first region (21m) to (21C) may be approximately 1000A or less.
The combined thickness of both the second column and the second column [(22&) to (22C) may be about 4000A or more.
以上のように構成された透明電極（２０１）〜（２Ｑｃ
）によれば、第１図に示す（４）く、透明電極（２０ｍ
）〜（２０Ｃ）ｔパターニングすべくエツチングすると
、第２ｆ＠域（２２息）〜（２２Ｃ）は全て除去される
ものの、若干の第１領域（２１）〜（２１Ｃ）が基板（
１）上面に残存する場合がある。しかし、祈る残存部分
ゴは非常に高い抵抗僑を持つため、不所望な短絡を起こ
すことがない。Transparent electrodes (201) to (2Qc
), as shown in Figure 1 (4), a transparent electrode (20 m
) ~ (20C) When etching is performed to pattern the substrate (
1) May remain on the top surface. However, since the remaining part of the circuit has a very high resistance, it will not cause an undesired short circuit.
なお、第２図中の破魂は透明電極（２０＆）〜（２Ｑｃ
） にフッ素ＣＦ）ｔ−混入することによって抵抗値
の低減を図った場合である。この場合にあっても、上述
と同様の効果が得られる。In addition, the broken souls in Figure 2 are transparent electrodes (20 &) ~ (2Qc
This is a case in which the resistance value is reduced by mixing fluorine (CF)t- into (CF). Even in this case, the same effects as described above can be obtained.
ところで、第１領域（２１ａ）〜（２１Ｃ）に含まれる
アルカリ金属が拡散により第２領域（２２ａ）〜（２２
Ｃ）を経て半専体光活性ｍ （３１内に侵入すると、光
起電力装置としての出力特性の劣化が生じる。By the way, the alkali metal contained in the first regions (21a) to (21C) diffuses into the second regions (22a) to (22C).
If semi-exclusive photoactivity m (31) enters through C), the output characteristics of the photovoltaic device will deteriorate.
このため、第２頭域（２２＆） 〜（２２Ｃ）は第１頭
域（２１ａ）〜（２１Ｃ）内のアルカリ金属の拡散移幼
に対するバリア層として働くような厚さく例えば、１０
００Ａ以上）とするのが好ましい。For this reason, the second head regions (22&) to (22C) have a thickness of, for example, 10 mm, so as to act as a barrier layer against the diffusion and transfer of the alkali metal in the first head regions (21a) to (21C).
00A or more) is preferable.
なお、アルカリ金属を含まない基板を使用する場合には
、酸化錫膜の形成時に、最初アルカリ金属を外部から添
加すれば艮い。Note that when using a substrate that does not contain an alkali metal, it is sufficient to first add an alkali metal from the outside when forming the tin oxide film.
（ト）発明の効果
本発明によれば、裁板上に形成された酸化錫膜において
、基板と接する側、言い換えれば酸化錫膜をバターニン
グした際、不所賃に残存する領域にアルカリ金属を含む
頭載を形成したので、この領域の抵抗値を非常に＾くす
ることができ、不所望な短絡を防止することができる。(g) Effects of the Invention According to the present invention, in the tin oxide film formed on the cutting board, when the side in contact with the substrate, in other words, the tin oxide film is buttered, an alkali metal is added to the area remaining in the unfilled area. Since the header including the capacitor is formed, the resistance value of this region can be made very low, and an undesired short circuit can be prevented.
第１図は本発明を光起電力装置に適用した場合を示す断
面図、第２図は本発明の酸化錫膜の膜厚とシート抵抗値
との関係を示す特性図、第６図及び第４図は従来の光起
電力装置を示す上面図及びそのｒｖ−■′線断面図であ
る。
（２０ａ） 〜（２０Ｃ）・・・透引電極、（２１ｍ）
〜（２１Ｃ）・・・第１領域、（２２ａ） 〜（２２
ｅ）−・・第２領域。FIG. 1 is a cross-sectional view showing the case where the present invention is applied to a photovoltaic device, FIG. 2 is a characteristic diagram showing the relationship between the film thickness and sheet resistance value of the tin oxide film of the present invention, and FIGS. FIG. 4 is a top view and a sectional view taken along the line rv-■' of a conventional photovoltaic device. (20a) ~(20C)...Transparent electrode, (21m)
~(21C)...first region, (22a) ~(22
e)--Second area.
Claims (1)
れて透明電極として用いられる酸化錫膜において、上記
基板と接する側にアルカリ金属を含む領域を形成したこ
とを特徴とする透明電極用酸化錫膜。(1) A tin oxide film for a transparent electrode, which is formed on a substrate and then patterned into a predetermined shape to be used as a transparent electrode, in which a region containing an alkali metal is formed on the side in contact with the substrate. film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62147497A JPS63310505A (en) | 1987-06-12 | 1987-06-12 | Tin oxide membrane for transparent electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62147497A JPS63310505A (en) | 1987-06-12 | 1987-06-12 | Tin oxide membrane for transparent electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63310505A true JPS63310505A (en) | 1988-12-19 |
Family
ID=15431718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62147497A Pending JPS63310505A (en) | 1987-06-12 | 1987-06-12 | Tin oxide membrane for transparent electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63310505A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006082879A1 (en) * | 2005-02-02 | 2006-08-10 | Matsubo Corporation | Oxide transparent electroconductive film and method for forming oxide transparent electroconductive film containing alkali metal, and organic optical device utilizing the oxide transparent electroconductive film |
| EP2408023A1 (en) * | 2010-07-16 | 2012-01-18 | Applied Materials, Inc. | Thin-film Solar Fabrication Process, Deposition method for TCO layer, and Solar cell precursor layer stack |
| WO2012102305A1 (en) * | 2011-01-27 | 2012-08-02 | 三洋電機株式会社 | Photovoltaic device |
-
1987
- 1987-06-12 JP JP62147497A patent/JPS63310505A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006082879A1 (en) * | 2005-02-02 | 2006-08-10 | Matsubo Corporation | Oxide transparent electroconductive film and method for forming oxide transparent electroconductive film containing alkali metal, and organic optical device utilizing the oxide transparent electroconductive film |
| EP2408023A1 (en) * | 2010-07-16 | 2012-01-18 | Applied Materials, Inc. | Thin-film Solar Fabrication Process, Deposition method for TCO layer, and Solar cell precursor layer stack |
| WO2012102305A1 (en) * | 2011-01-27 | 2012-08-02 | 三洋電機株式会社 | Photovoltaic device |
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