JPS63308963A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS63308963A
JPS63308963A JP14407787A JP14407787A JPS63308963A JP S63308963 A JPS63308963 A JP S63308963A JP 14407787 A JP14407787 A JP 14407787A JP 14407787 A JP14407787 A JP 14407787A JP S63308963 A JPS63308963 A JP S63308963A
Authority
JP
Japan
Prior art keywords
source
drain
region
self
aligned manner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14407787A
Inventor
Hidekazu Murakami
Yasuo Wada
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14407787A priority Critical patent/JPS63308963A/en
Publication of JPS63308963A publication Critical patent/JPS63308963A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568Lateral single gate silicon transistors
    • H01L29/66606Lateral single gate silicon transistors with final source and drain contacts formation strictly before final or dummy gate formation, e.g. contact first technology

Abstract

PURPOSE: To enable a semiconductor device to be integrated at a still higher level, by forming source and drain electrodes in a previously isolated element- forming region in a self-aligned manner, forming a gate electrode also in a self-aligned manner and extracting the source and drain electrodes by means of a doped polycrystalline silicon film.
CONSTITUTION: Since a source region 1, a drain region 2 and a gate electrode 3 are formed in a transistor region isolated by an insulating film, in a self- aligned manner, they are allowed to have a fineness less than a minimum processable size. The source and drain regions are led out by a polycrystalline silicon film 5 and connected to an interconnecting layer 6 on the insulating film 4. Accordingly, it is possible to prevent problems such as defective contact which would be caused by punch-through of aluminum into the source and drain due to direct contact of the aluminum interconnection with the source and drain. Further, the area of the contact region having a small dimension along the length of the channel can be extended long along the width of the channel, Accordingly, even higher integration of the device can be realized.
COPYRIGHT: (C)1988,JPO&Japio
JP14407787A 1987-06-11 1987-06-11 Semiconductor device and manufacture thereof Pending JPS63308963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14407787A JPS63308963A (en) 1987-06-11 1987-06-11 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14407787A JPS63308963A (en) 1987-06-11 1987-06-11 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS63308963A true JPS63308963A (en) 1988-12-16

Family

ID=15353736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14407787A Pending JPS63308963A (en) 1987-06-11 1987-06-11 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS63308963A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03104168A (en) * 1989-09-18 1991-05-01 Fujitsu Ltd Manufacture of semiconductor device
US5221632A (en) * 1990-10-31 1993-06-22 Matsushita Electric Industrial Co., Ltd. Method of proudcing a MIS transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03104168A (en) * 1989-09-18 1991-05-01 Fujitsu Ltd Manufacture of semiconductor device
US5221632A (en) * 1990-10-31 1993-06-22 Matsushita Electric Industrial Co., Ltd. Method of proudcing a MIS transistor
US5808347A (en) * 1990-10-31 1998-09-15 Matsushita Electric Industrial Co., Ltd. MIS transistor with gate sidewall insulating layer

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