JPS63308375A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPS63308375A JPS63308375A JP62144916A JP14491687A JPS63308375A JP S63308375 A JPS63308375 A JP S63308375A JP 62144916 A JP62144916 A JP 62144916A JP 14491687 A JP14491687 A JP 14491687A JP S63308375 A JPS63308375 A JP S63308375A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state imaging
- imaging device
- frequency filter
- optical low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 66
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims abstract 2
- 238000003384 imaging method Methods 0.000 claims description 70
- 239000013078 crystal Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 9
- 238000007789 sealing Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、固体撮像装置、特に、光学的低周波濾過器を
通して固体撮像素子チップに光信号を入力する固体撮像
装置に適用して有効な技術に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention can be effectively applied to a solid-state imaging device, particularly a solid-state imaging device in which an optical signal is input to a solid-state imaging device chip through an optical low-frequency filter. It's about technology.
ビデオカメラ等に使用される固体撮像装置は、固体撮像
素子チップの受光面に光学レンズで集光された光信号を
入力し、この光信号を固体撮像素子チップで電気信号に
変換している。この種の固体撮像装置では、画質を損な
うモアレ（讃ｏｉｒｅ）効果を低減するために、光学レ
ンズと固体撮像素子チップとの間に光学的低周波濾過器
（ＬＰＦ）を設けている。光学的低周波濾過器は、光信
号の進路の制御性が良好な光透過性が高い水晶板で形成
されている。A solid-state imaging device used in a video camera or the like inputs an optical signal focused by an optical lens onto the light-receiving surface of a solid-state imaging element chip, and converts this optical signal into an electrical signal using the solid-state imaging element chip. In this type of solid-state imaging device, an optical low frequency filter (LPF) is provided between the optical lens and the solid-state imaging element chip in order to reduce the moire effect that impairs image quality. The optical low frequency filter is formed of a quartz plate with high light transmittance and good controllability of the path of the optical signal.
なお、固体撮像装置のモアレ効果については。Regarding the moiré effect of solid-state imaging devices.
例えば、昭和６１年７月３０日発行２株式会社昭晃堂。For example, published on July 30, 1986 2 Shokodo Co., Ltd.
テレビジョン学会線、「固体撮像デバイスＪ、ｐ１３４
及びρ１３５に記載されている。Television Society Line, “Solid-state Imaging Devices J, p134
and ρ135.
本発明者は、固体撮像装置の固定パターン雑音の特性試
験において、偶然、光学的低周波濾過器の装着を忘れた
まま、前記特性試験を行ったところ、固定パターン雑音
が低減する事実を発見した。The inventor of the present invention accidentally forgot to attach an optical low-frequency filter when testing the characteristics of fixed pattern noise in a solid-state imaging device, and discovered that the fixed pattern noise was reduced. .
この事実に基づき、光学的低周波濾過器を固体撮像素子
チップに近接及び離反させたところ、固定パターン雑音
が変化することを確認した。つまり、本発明者は、固定
パターン雑音が、光学的低周波濾過器の存在に大きく依
存することを確認した。Based on this fact, we confirmed that fixed pattern noise changes when the optical low-frequency filter is moved closer to or farther away from the solid-state image sensor chip. In other words, the inventors have confirmed that fixed pattern noise is highly dependent on the presence of an optical low frequency filter.
本発明者によれば、固体撮像素子チップのクロック信号
（周波数：１１ＭＨｚ）が光学的低周波濾過器に飛び込
んで水晶の固有振動と共鳴し、この共鳴された電磁波が
反射波として固体撮像素子チップに入射するために、固
定パターン雑音が生じると考察している。クロック信号
は、固体撮像索子チップのシフトレジスタの転送信号で
ある。固定パターン雑音は、固体撮像装置で映像される
画質が低下するという問題を生じる。According to the present inventor, the clock signal (frequency: 11 MHz) of the solid-state image sensor chip enters an optical low-frequency filter and resonates with the natural vibration of the crystal, and this resonated electromagnetic wave is transmitted as a reflected wave to the solid-state image sensor chip. It is considered that fixed pattern noise is generated due to the incident on the The clock signal is a transfer signal of the shift register of the solid-state imaging probe chip. Fixed pattern noise causes a problem in that the quality of images captured by solid-state imaging devices deteriorates.
本発明の目的は、固体撮像装置において、固定パターン
雑音を低減し、画質を向上することが可能な技術を提供
することにある。An object of the present invention is to provide a technique that can reduce fixed pattern noise and improve image quality in a solid-state imaging device.
本発明の他の目的は、固体撮像素子チップからのクロッ
ク信号に基づく固定パターン雑音を低減し、前記自記を
達成することが可能な技術を提供することにある。Another object of the present invention is to provide a technique that can reduce fixed pattern noise based on a clock signal from a solid-state image sensor chip and achieve the above self-recording.
本発明の他の目的は、固体撮像素子チップの外部からの
クロック信号に基づく固定パターン雑音を低減し、前記
目的を達成することが可能な技術を提供することにある
。Another object of the present invention is to provide a technique that can reduce fixed pattern noise based on a clock signal from the outside of a solid-state image sensor chip and achieve the above object.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述及び添付図面によって明らかになるであろ
う。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち、代表的なものの概
要を簡単に説明すれば、下記のとおりである。A brief overview of typical inventions disclosed in this application is as follows.
本発明は、固体撮像装置の光学的低周波濾過器と固体撮
像素子チップとの間に、光透過性及び導電性を有するシ
ールド部材を設けたことを特徴とする。The present invention is characterized in that a shield member having optical transparency and electrical conductivity is provided between an optical low frequency filter and a solid-state imaging element chip of a solid-state imaging device.
また、本発明は、固体撮像装置の光学的低周波濾過器を
光透過性及び導電性を有するシールド部材で被覆したこ
とを特徴とする。Further, the present invention is characterized in that the optical low frequency filter of the solid-state imaging device is covered with a shielding member having light transparency and conductivity.
上述した手段によれば、本発明は、固体撮像素子チップ
から光学的低周波濾過器に飛び込むクロック信号をシー
ルド部材で吸収し、前記クロック信号が光学的低周波濾
過器に達しないように電磁的に遮蔽することができるの
で、固定パターン雑音を低減し、固体撮像装置で映像さ
れる画質を向上することができる。According to the above-mentioned means, the present invention absorbs the clock signal jumping from the solid-state image sensor chip to the optical low frequency filter with the shield member, and electromagnetically prevents the clock signal from reaching the optical low frequency filter. Therefore, it is possible to reduce fixed pattern noise and improve the image quality captured by the solid-state imaging device.
また、本発明は、固体撮像素子チップの外部から光学的
低周波濾過器に飛び込むクロック信号をシールド部材で
吸収し、前記クロック信号が光学的低周波濾過器に達し
ないように電磁的に遮蔽することができるので、固定パ
ターン雑音を低減し、固体撮像装置で映像される画質を
向上することができる。Moreover, the present invention absorbs a clock signal that enters the optical low frequency filter from the outside of the solid-state image sensor chip with a shield member, and electromagnetically shields the clock signal from reaching the optical low frequency filter. Therefore, it is possible to reduce fixed pattern noise and improve the image quality captured by the solid-state imaging device.
以下１本発明の構成について、ビデオカメラで使用され
る固体撮像装置に本発明を適用した一実施例とともに説
明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of the present invention will be described below along with an embodiment in which the present invention is applied to a solid-state imaging device used in a video camera.
なお、実施例を説明するための全図において、同一機能
を有するものは同一符号を付け、その繰り返しの説明は
省略する。In addition, in all the figures for explaining the embodiment, parts having the same functions are given the same reference numerals, and repeated explanations thereof will be omitted.
（発明の実施例■）
本発明の実施例Ｉである固体撮像装置の概略構成を第１
図（部分断面図）で示す。(Embodiment ■ of the invention) The schematic configuration of a solid-state imaging device which is Embodiment I of the present invention is described in the first embodiment.
It is shown in the figure (partial sectional view).
第１図に示すように、固体撮像装置は、パッケージ部材
２のキャビティ内に固体撮像素子チップ１を搭載し、こ
の固体撮像素子チップ１を透明ガラスキャップ３．で気
密封止している。As shown in FIG. 1, the solid-state imaging device includes a solid-state imaging device chip 1 mounted in a cavity of a package member 2, and a transparent glass cap 3. It is hermetically sealed.
固体撮像素子チップ１は、図示していないが。Although the solid-state image sensor chip 1 is not shown.
光信号’ｅＲ気信分信号換するフォトダイオードを行列
状に複数配置した受光面を有している。固体撮像素子チ
ップ１の受光面の周辺には、各フォトダイオードの電気
信号を順次転送するシフトレジスタが配置されている。It has a light-receiving surface in which a plurality of photodiodes for converting optical signals are arranged in a matrix. A shift register is arranged around the light-receiving surface of the solid-state image sensor chip 1 to sequentially transfer electrical signals from each photodiode.
シフトレジスタは１Ｍ０３ＩＣによって形成され、固体
撮像素子チップ１の外部から入力されるクロック信号（
転送信号）によって動作するように構成されている。The shift register is formed by a 1M03IC and receives a clock signal (
transfer signal).
固体撮像素子チップ１は、ボンディングワイヤを通して
、パッケージ部材２のキャビティ内部に形成された配線
に接続されている。この配線は、パッケージ部材２の内
部を通してリード４に接続されている。The solid-state image sensor chip 1 is connected to wiring formed inside the cavity of the package member 2 through bonding wires. This wiring is connected to the lead 4 through the inside of the package member 2.
パッケージ部材２は１例えばセラミック材料で形成され
ている。The package member 2 is made of, for example, a ceramic material.
透明ガラスキャップ３は、透明なガラス基板で形成され
ている。The transparent glass cap 3 is made of a transparent glass substrate.
パッケージ部材２と透明ガラスキャップ３とで気密封止
される固体撮像素子チップ１は、リード４を介在させて
プリント配線基板５に装着されている。プリント配線基
板５は、ボルト６によってレンズマウント部材７に装置
され、シールドカバー８で封止されている。A solid-state image sensor chip 1, which is hermetically sealed with a package member 2 and a transparent glass cap 3, is attached to a printed wiring board 5 with leads 4 interposed therebetween. The printed wiring board 5 is attached to the lens mount member 7 with bolts 6 and sealed with a shield cover 8.
シールドカバー８は、例えばアルミニウム合金等の金属
材料や硬質樹脂材料で構成されている。The shield cover 8 is made of, for example, a metal material such as an aluminum alloy or a hard resin material.
レンズマウント部材７は、光学レンズ（例えばガラスレ
ンズ）フＡ及び７Ｂがレンズ枠体７Ｃに取り付けて構成
されている。レンズ枠体フＣは、例えばアルミニウム合
金等の金属材料や硬質樹脂材料で構成されている。The lens mount member 7 is constructed by attaching optical lenses (for example, glass lenses) A and 7B to a lens frame 7C. The lens frame body C is made of, for example, a metal material such as an aluminum alloy or a hard resin material.
光学レンズ７Ｂと固体撮像素子チップ１との間のレンズ
マウント部材７のレンズ枠体７Ｃには、光学的低周波濾
過器９及び赤外線濾過器（ＩＲカット）１０が設けられ
ている。An optical low frequency filter 9 and an infrared filter (IR cut) 10 are provided in the lens frame 7C of the lens mount member 7 between the optical lens 7B and the solid-state image sensor chip 1.
光学的低周波濾過器（ＬＰＦ）９は、モアレ効果を低減
するために設けられている。光学的低周波濾過器９は、
光学レンズ７Ａ及び７Ｂを通した光信号の進路の制御性
が高い水晶板で構成される。An optical low frequency filter (LPF) 9 is provided to reduce moiré effects. The optical low frequency filter 9 is
It is composed of a crystal plate that allows high controllability of the path of the optical signal passing through the optical lenses 7A and 7B.
この光学的低周波濾過器９は、所謂光学的水晶フィルタ
と称される。光学的低周波濾過器９としては高価である
が、人工ダイヤモンド板で構成することが可能である。This optical low frequency filter 9 is called a so-called optical crystal filter. Although the optical low frequency filter 9 is expensive, it can be constructed from an artificial diamond plate.
このように構成される固体撮像装置は、固体撮像素子チ
ップ１と光学的低周波濾過器９との間の赤外線濾過器１
０の表面に、シールド部材１１が設けられている。シー
ルド部材１１は、光信号を通過させるために光透過性を
有し、しかも導電性を有する透明導電性材料で構成する
。具体的には、シールド部材１１は、例えば、Ｉｎ２Ｏ
，とＺｎＯ□との混合物である透明導電性材料ＩＴＯで
形成する。The solid-state imaging device configured as described above includes an infrared filter 1 between the solid-state imaging element chip 1 and the optical low frequency filter 9.
A shield member 11 is provided on the surface of 0. The shield member 11 is made of a transparent conductive material that is transparent to allow optical signals to pass therethrough and is also conductive. Specifically, the shield member 11 is made of, for example, In2O
, and ZnO□.
この透明導電性材料ＩＴ○は、スパッタで形成する。This transparent conductive material IT○ is formed by sputtering.
このように、固体撮像装置にシールド部材１１を設ける
ことにより、透明ガラスキャップ３を通して、固体撮像
素子チップ１から光学的低周波濾過器９に飛び込むクロ
ック信号（シフトレジスタの転送信号）をシールド部材
１１で吸収し、前記クロック信号が光学的低周波濾過器
９に達しないように電磁的に遮蔽することができるので
、光学的低周波濾過器９で共鳴し反射する電磁波をなく
し、固体撮像素子チップ１の固定パターン雑音を低減す
ることができる。この結果、固体撮像装置で映像される
画質を向上することができる。In this way, by providing the shield member 11 in the solid-state imaging device, the clock signal (transfer signal of the shift register) that jumps from the solid-state imaging device chip 1 to the optical low frequency filter 9 through the transparent glass cap 3 is transmitted to the shield member 11. Since the clock signal can be electromagnetically shielded from reaching the optical low frequency filter 9, electromagnetic waves that resonate and are reflected by the optical low frequency filter 9 are eliminated, and the solid-state image sensor chip 1 fixed pattern noise can be reduced. As a result, the quality of images captured by the solid-state imaging device can be improved.
（発明の実施例■）
本実施例■は、固体撮像装置に設けるシールド部材の装
着位置を変えた、本発明の第２実施例である。(Embodiment 2 of the invention) Embodiment 2 is a second embodiment of the present invention in which the mounting position of the shield member provided in the solid-state imaging device is changed.
本発明の実施例■である固体撮像装置の概略構成を第２
図（部分断面図）で示す。The schematic configuration of the solid-state imaging device which is the embodiment ① of the present invention is shown in the second
It is shown in the figure (partial sectional view).
第２図に示すように、固体撮像装置は、固体撮像素子チ
ップ！と光学的低周波濾過ＰＪ９との間のレンズマウン
ト部材７のレンズ枠体７Ｃにシールド部材１１を設けて
いる。As shown in Figure 2, a solid-state imaging device is a solid-state imaging element chip! A shield member 11 is provided on the lens frame 7C of the lens mount member 7 between the optical low frequency filter PJ9 and the optical low frequency filter PJ9.
このように構成される固体撮像装置は、前記実施例Ｉと
同様の効果を得ることができる。The solid-state imaging device configured in this manner can obtain the same effects as in Example I described above.
（発明の実施例■）
本実施例■は、固体撮像装置に設けるシールド部材の装
着位置を変えた、本発明の第３実施例である。(Embodiment 2 of the invention) Embodiment 2 is a third embodiment of the present invention in which the mounting position of the shield member provided in the solid-state imaging device is changed.
本発明の実施例■である固体撮像装置の概略構成を第３
°図（部分断面図）で示す。The schematic configuration of the solid-state imaging device which is the embodiment ① of the present invention is shown in the third
It is shown in the diagram (partial cross section).
第３図に示すように、固体撮像装置は、固体撮像素子チ
ップ１と光学的低周波濾過器９との間であって、固体撮
像素子チップ１を気密封止する透明ガラスキャップ３の
表面にシールド部材１１を設けている。As shown in FIG. 3, the solid-state imaging device is located between the solid-state imaging device chip 1 and the optical low-frequency filter 9, and on the surface of a transparent glass cap 3 that hermetically seals the solid-state imaging device chip 1. A shield member 11 is provided.
このように構成される固体撮像装置は、前記実施例■と
同様の効果を得ることができる。The solid-state imaging device configured in this manner can obtain the same effects as in the embodiment (2).
（発明の実施例■）
本実施例■は、固体撮像装置に設けるシールド部材の装
着位置を変えた、本発明の第４実施例である。(Embodiment 2 of the invention) Embodiment 2 is a fourth embodiment of the present invention in which the mounting position of the shield member provided in the solid-state imaging device is changed.
本発明の実施例■である固体撮像装置の概略構成を第４
図（部分断面図）で示す。The schematic configuration of the solid-state imaging device which is the embodiment ① of the present invention is shown in the fourth
It is shown in the figure (partial sectional view).
第４図に示すように、固体撮像装置は、固体撮像素子チ
ップ１をベースパッケージ部材２Ａ及びキャップパッケ
ージ部材２Ｂで構成されるキャビティ内に気密封止して
いる。キャップパッケージ部材２Ｂの光信号の入射部分
には、光学的低周波濾過器９が取り付けられている。As shown in FIG. 4, the solid-state imaging device has a solid-state imaging element chip 1 hermetically sealed in a cavity constituted by a base package member 2A and a cap package member 2B. An optical low frequency filter 9 is attached to the optical signal incident portion of the cap package member 2B.
このように構成される固体撮像装置は、固体撮像素子チ
ップ１と光学的低周波濾過器９との間であって、キャッ
プパッケージ部材２Ｂに取り付けられた光学的低周波濾
過器９の表面（キャビティ内側）にシールド部材１１を
設けている。The solid-state imaging device configured in this manner is arranged between the solid-state imaging element chip 1 and the optical low-frequency filter 9, and has a surface (cavity) of the optical low-frequency filter 9 attached to the cap package member 2B. A shield member 11 is provided on the inside).
このように構成される固体撮像装置は、前記実施例Ｉと
同様の効果を得ることができる。The solid-state imaging device configured in this manner can obtain the same effects as in Example I described above.
（発明の実施例■）
本実施例■は、固体撮像装置の固体撮像素子チップの外
部からのクロック信号に対して固定パターン雑音を低減
した、本発明の第５実施例である。(Embodiment 2 of the Invention) Embodiment 2 is a fifth embodiment of the present invention in which fixed pattern noise is reduced with respect to a clock signal from the outside of a solid-state imaging element chip of a solid-state imaging device.
本発明の実施例■である固体撮像装置の要部の概略構成
を第５図（部分断面図）で示す。FIG. 5 (partial cross-sectional view) shows a schematic configuration of the main parts of a solid-state imaging device which is Embodiment 2 of the present invention.
第５図に示すように、固体撮像装置は、固体撮像素子チ
ップ１に入力されるクロック信号をパッケージ部材２の
外部の信号端子ＣＬからリード４を通して入力している
。固体撮像素子チップ１の映像信号は、パッケージ部材
２の外部のプリアンプ１２にリード４を通して出力され
ている。As shown in FIG. 5, in the solid-state imaging device, a clock signal input to the solid-state imaging element chip 1 is inputted from a signal terminal CL outside the package member 2 through a lead 4. A video signal from the solid-state image sensor chip 1 is output to a preamplifier 12 outside the package member 2 through a lead 4.
固体撮像素子チップ１は、パッケージ部材２に搭載され
、封止用キャップを兼ねた光学的低周波濾過器９で気密
封止されている。The solid-state image sensor chip 1 is mounted on a package member 2 and hermetically sealed with an optical low frequency filter 9 that also serves as a sealing cap.
このように構成される固体撮像装置は、前記封止用キャ
ップを兼ねた光学的低周波濾過器９をシールド部材１１
で被覆している。In the solid-state imaging device configured in this way, the optical low frequency filter 9 which also serves as the sealing cap is connected to the shield member 11.
It is covered with.
このように、固体撮像装置の光学的低周波濾過器９を気
密封止用キャップとして構成し、この光学的低周波濾過
器９をシールド部材１１で被覆することにより、前記実
施例Ｉと同様の効果を得ることができると共に、固体撮
像素子チップ１の外部の信号端子ＣＬから光学的低周波
濾過器９に飛び込むクロック信号（矢印Ａに示す経路）
をシールド部材１１で吸収し、前記クロック信号が光学
的低周波濾過器９に達しないように電磁的に遮蔽するこ
とができるので、光学的低周波濾過器９で共鳴しプリア
ンプ１２に反射する電磁波（矢印Ｂに示す経路）をなく
シ、固体撮像素子チップ１の外部で固定パターン雑音が
乗ることを低減することができるにの結果、固体撮像装
置で映像される画質を向上することができる。In this way, by configuring the optical low frequency filter 9 of the solid-state imaging device as an airtight sealing cap and covering the optical low frequency filter 9 with the shield member 11, the same structure as in Example I can be obtained. The clock signal that jumps from the external signal terminal CL of the solid-state image sensor chip 1 to the optical low frequency filter 9 (path shown by arrow A)
can be absorbed by the shielding member 11 and electromagnetically shielded so that the clock signal does not reach the optical low frequency filter 9, so that the electromagnetic wave that resonates in the optical low frequency filter 9 and is reflected to the preamplifier 12. (path shown by arrow B), it is possible to reduce the presence of fixed pattern noise outside the solid-state image sensor chip 1, and as a result, the quality of images captured by the solid-state image sensor can be improved.
以上、本発明者によってなされた発明を、前記実施例に
基づき具体的に説明したが、本発明は、前記実施例に限
定されるものではなく、その要旨を逸脱しない範囲にお
いて種々変更可能であることは勿論である。As above, the invention made by the present inventor has been specifically explained based on the above embodiments, but the present invention is not limited to the above embodiments, and can be modified in various ways without departing from the gist thereof. Of course.
例えば、本発明は、固体撮像装置の固体撮像素子チップ
１の表面に光透過性及び導電性を有するシールド層を構
成してもよい。For example, in the present invention, a shield layer having optical transparency and conductivity may be configured on the surface of the solid-state image sensor chip 1 of the solid-state image sensor.
本願において開示される発明のうち代表的なものによっ
て得られる効果を簡単に説明すれば、下記のとおりであ
る。A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.
固体撮像装置において、固体撮像素子チップからのクロ
ック信号によって生じる固定パターン雑音を低減するこ
とができるので、映像される画質を向上することができ
る。In a solid-state imaging device, it is possible to reduce fixed pattern noise caused by a clock signal from a solid-state imaging element chip, thereby improving the image quality.
また、固体撮像装置において、固体撮像素子チップの外
部からのクロック信号によって生じる固定パターン雑音
を低減することができるので、映像される画質を向上す
ることができる。Furthermore, in the solid-state imaging device, fixed pattern noise caused by a clock signal from outside the solid-state imaging element chip can be reduced, so the image quality of the image can be improved.
【図面の簡単な説明】
第１図は１本発明の実施例１である固体撮像装置の概略
構成を示す部分断面図。
第２図は、本発明の実施例■である固体撮像装置の概略
構成を示す部分断面図。
第３図は、本発明の実施例■である固体撮像装置の概略
構成を示す部分断面図。
第４図は、本発明の実施例■である固体撮像装置の概略
構成を示す部分断面図、
第５図は、本発明の実施例■である固体撮像装置の要部
の概略構成を示す部分断面図である。
図中、１・・・固体撮像素子チップ、２・・・パッケー
ジ部材、３・・・透明ガラスキャップ、フ・・・レンズ
マウント部材、７Ａ、７Ｂ・・・光学レンズ、フＣ・・
・レンズ枠体、９・・・光学的低周波濾過器、１１・・
・シールド部材である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a partial sectional view showing a schematic configuration of a solid-state imaging device according to a first embodiment of the present invention. FIG. 2 is a partial sectional view showing a schematic configuration of a solid-state imaging device according to Embodiment 2 of the present invention. FIG. 3 is a partial sectional view showing a schematic configuration of a solid-state imaging device according to Embodiment 2 of the present invention. FIG. 4 is a partial cross-sectional view showing a schematic configuration of a solid-state imaging device that is an embodiment (■) of the present invention, and FIG. FIG. In the figure, 1... solid-state image sensor chip, 2... package member, 3... transparent glass cap, frame... lens mount member, 7A, 7B... optical lens, cover C...
・Lens frame, 9... Optical low frequency filter, 11...
・It is a shield member.
Claims (1)
光信号を入力する固体撮像装置において、前記光学的低
周波濾過器と固体撮像素子チップとの間に、光透過性及
び導電性を有するシールド部材を設けたことを特徴とす
る固体撮像装置。 ２、前記シールド部材は、Ｉｎ＿２Ｏ＿３とＺｎＯ＿２
との混合物からなる透明導電性材料で構成されているこ
とを特徴とする特許請求の範囲第１項に記載の固体撮像
装置。 ３、前記光学的低周波濾過器は、光学的水晶フィルタで
あることを特徴とする特許請求の範囲第１項又は第２項
に記載の固体撮像装置。 ４、光学的低周波濾過器を通して固体撮像素子チップに
光信号を入力する固体撮像装置において、前記光学的低
周波濾過器を光透過性及び導電性を有するシールド部材
で被覆したことを特徴とする固体撮像装置。[Scope of Claims] 1. In a solid-state imaging device in which an optical signal is input to a solid-state imaging device chip through an optical low-frequency filter, there is a light-transmitting device between the optical low-frequency filter and the solid-state imaging device chip. and a solid-state imaging device comprising a shield member having conductivity. 2. The shield member is made of In_2O_3 and ZnO_2
2. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is made of a transparent conductive material made of a mixture of . 3. The solid-state imaging device according to claim 1 or 2, wherein the optical low frequency filter is an optical crystal filter. 4. A solid-state imaging device that inputs an optical signal to a solid-state image sensor chip through an optical low-frequency filter, characterized in that the optical low-frequency filter is covered with a shielding member that is optically transparent and conductive. Solid-state imaging device.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62144916A JPS63308375A (en) | 1987-06-10 | 1987-06-10 | Solid-state image sensing device |
| KR1019880006913A KR920000578B1 (en) | 1987-06-10 | 1988-06-09 | Solid-state image device |
| US07/204,737 US4896217A (en) | 1987-06-10 | 1988-06-10 | Solid-state imaging device including a transparent conductor between an optical low-pass filter and an imaging sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62144916A JPS63308375A (en) | 1987-06-10 | 1987-06-10 | Solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63308375A true JPS63308375A (en) | 1988-12-15 |
Family
ID=15373231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62144916A Pending JPS63308375A (en) | 1987-06-10 | 1987-06-10 | Solid-state image sensing device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4896217A (en) |
| JP (1) | JPS63308375A (en) |
| KR (1) | KR920000578B1 (en) |
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| JP2013012615A (en) * | 2011-06-29 | 2013-01-17 | Fujifilm Corp | Solid state imaging device, and manufacturing method thereof, and transparent conductive film for solid state imaging device used for the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR890001359A (en) | 1989-03-20 |
| KR920000578B1 (en) | 1992-01-16 |
| US4896217A (en) | 1990-01-23 |
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