JP2014216394A - Solid state imaging device and electronic camera - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance the image quality of a captured image.SOLUTION: A solid state imaging device 1 includes a semiconductor chip 2 having an imaging region 2a, a wiring board 3 having an aperture 3a in a region facing the imaging region 2a, provided with an antireflection part 8 on the end face of the aperture 3a, and bonded to the surface of the semiconductor chip 2 on the imaging region 2a side, and a translucent plate 4 bonded to the surface of the semiconductor chip 2 on the side opposite from the semiconductor chip 2 so as to close the aperture 3a.

Description

  The present invention relates to a solid-state imaging device and an electronic camera using the same.

  As an example of the solid-state imaging device, FIG. 4 of the following Patent Document 1 includes a substrate on which a light passage hole is formed, and a cover glass installed on one surface of the substrate so as to close the light passage hole, An imaging unit is disclosed that includes a solid-state imaging device installed on the other surface of the substrate so as to close the light passage hole.

JP 2000-147346 A

  However, in the conventional solid-state imaging device, the image quality of the captured image is deteriorated due to the structure.

  The present invention has been made in view of such circumstances, and an object thereof is to provide a solid-state imaging device capable of improving the image quality of a captured image, and an electronic camera using the same.

  The following aspects are presented as means for solving the problems. The solid-state imaging device according to the first aspect has a semiconductor chip having an imaging region, an opening in a region including the region facing the imaging region, an antireflection portion is provided on an end surface of the opening, and A wiring board bonded to the surface of the semiconductor chip on the imaging region side, and a translucent plate bonded to the surface of the wiring board opposite to the semiconductor chip so as to close the opening. It is provided.

  The solid-state imaging device according to a second aspect is the solid state imaging device according to the first aspect, wherein the wiring board is made of a substrate material that emits α-rays, and the α-rays emitted from the substrate material are formed on the end surfaces of the openings. The alpha ray shielding part which shields is provided.

  In the second aspect, the antireflection portion may also be used as the α-ray shielding portion.

  In the first or second aspect, the antireflection portion may be a satin portion subjected to a satin finish.

  In the solid-state imaging device according to the third aspect, in the first or second aspect, the height of the surface of the wiring board opposite to the semiconductor chip with respect to the surface of the semiconductor chip on the imaging region side When t is t, the end face of the opening is separated from the periphery of the imaging region by a distance of t / 2.8 or more.

  In any one of the first to third aspects, the end surface of the opening may be a tapered surface having an opening area that widens toward the semiconductor chip.

  A solid-state imaging device according to a fourth aspect is the solid-state imaging device according to any one of the first to third aspects, wherein the translucent plate is opposite to the semiconductor chip with respect to the surface of the semiconductor chip on the imaging region side. When the height of the surface is tg, the outer peripheral end surface of the translucent plate is separated from the periphery of the imaging region by a distance of tg / 2.8 or more.

  In any one of the first to fourth aspects, the outer peripheral end surface of the translucent plate may be a tapered surface that spreads toward the semiconductor chip.

  In the solid-state imaging device according to the fifth aspect, in any one of the first to fourth aspects, a member having a refractive index on the outer peripheral end surface of the translucent plate that reduces reflection of light on the outer peripheral end surface. It is provided.

  A solid-state imaging device according to a sixth aspect has a semiconductor chip having an imaging region, an opening in a region including the region facing the imaging region, and is bonded to a surface of the semiconductor chip on the imaging region side, and A wiring board made of a substrate material that emits α rays, an α-ray shielding portion that is formed on an end face of the opening and shields α rays emitted from the substrate material, and the semiconductor chip of the wiring substrate And a translucent plate bonded on the opposite surface so as to close the opening.

  A solid-state imaging device according to a seventh aspect has a semiconductor chip having an imaging region and an opening in a region including a region facing the imaging region, and an end surface of the opening opens toward the semiconductor chip side. The wiring board is a tapered surface having an increased area and is bonded to the surface of the semiconductor chip on the imaging region side, and the opening on the surface of the wiring board opposite to the semiconductor chip is closed. And a translucent plate bonded together.

  A solid-state imaging device according to an eighth aspect includes a semiconductor chip having an imaging region, and a wiring that has an opening in a region including a region facing the imaging region and is bonded to a surface of the semiconductor chip on the imaging region side A substrate and a translucent plate that is bonded to a surface of the wiring substrate opposite to the semiconductor chip so as to close the opening, and whose outer peripheral end surface is a tapered surface extending toward the semiconductor chip; , With.

In the solid-state imaging device according to a ninth aspect, in any one of the first to eighth aspects, the thermal expansion coefficient of the substrate material of the wiring substrate at 25 ° C. is 25 ° C. of the substrate material of the semiconductor chip. It is within the range of ± 1.0 × 10 ⁻⁶ / K with respect to the thermal expansion coefficient.

  In addition, in this specification, a thermal expansion coefficient shall mean a linear expansion coefficient.

  An electronic camera according to a tenth aspect includes the solid-state imaging device according to any one of the first to ninth aspects.

  ADVANTAGE OF THE INVENTION According to this invention, the solid-state imaging device which can improve the image quality of a captured image, and an electronic camera using the same can be provided.

1 is a schematic cross-sectional view schematically showing a solid-state imaging device according to a first embodiment of the present invention. It is the partially expanded schematic sectional drawing which expanded a part in FIG. It is a schematic sectional drawing which shows typically the electronic camera by the 2nd Embodiment of this invention. It is a partially expanded schematic sectional drawing which shows typically the solid-state imaging device by the 3rd Embodiment of this invention. It is a partially expanded schematic sectional drawing which shows typically the solid-state imaging device by the 4th Embodiment of this invention. It is a partially expanded schematic sectional drawing which shows typically the solid-state imaging device by the 5th Embodiment of this invention. It is a partially expanded schematic sectional drawing which shows typically the solid-state imaging device by the 6th Embodiment of this invention. It is a partially expanded schematic sectional drawing which shows typically the solid-state imaging device by the 7th Embodiment of this invention. It is a partially expanded schematic sectional drawing which shows typically the solid-state imaging device by the 8th Embodiment of this invention.

  Hereinafter, a solid-state imaging device and an electronic camera according to the present invention will be described with reference to the drawings.

[First Embodiment]
FIG. 1 is a schematic cross-sectional view schematically showing a solid-state imaging device 1 according to the first embodiment of the present invention. FIG. 2 is a partially enlarged schematic cross-sectional view in which a part of FIG. 1 is enlarged.

  The solid-state imaging device 1 according to the present embodiment includes a semiconductor chip 2 having an imaging region 2a, a wiring board 3, and a translucent plate 4.

  In the present embodiment, the semiconductor chip 2 is an image sensor such as a CMOS or CCD configured as a chip, and a plurality of pixels (not shown) are two-dimensionally arranged in the imaging region 2a. The semiconductor chip 2 photoelectrically converts incident light incident on the imaging region 2a via the translucent plate 4 and outputs an image signal. For example, a read circuit (not shown) that reads the image signal by driving the pixel and a processing circuit (for example, an AD conversion circuit) that processes the output signal may be mounted on the semiconductor chip 2.

  In the present embodiment, the substrate material of the semiconductor chip 2 is silicon, and the semiconductor chip 2 is a so-called silicon chip. However, in the present invention, the substrate material of the semiconductor chip 2 is not necessarily limited to silicon.

  In the present embodiment, a rigid substrate is used as the wiring substrate 3. A circuit component may be mounted on the wiring board 3 so as to mount a predetermined circuit, or only the relay wiring may be mounted without mounting the circuit component. The wiring board 3 has an opening 3 a formed in a region including a region facing the imaging region 2 a of the semiconductor chip 2.

  An electrode pad (not shown) is formed on the upper surface (surface on the imaging region 2 a side) near the outer periphery of the semiconductor chip 2, and an electrode pad (not shown) is formed on the lower surface around the opening 3 a in the wiring substrate 3. These are joined by bumps 5. An adhesive 6 is formed between the vicinity of the outer periphery of the semiconductor chip 2 and the periphery of the opening 3a in the wiring board 3 (including the vicinity of the bumps 5), whereby the imaging region 2a, the translucent plate 4 and The airtightness of the space between them is maintained. The bonding between the electrode pads is not limited to the bonding by the bump 5. For example, the electrode pads may be joined by an ACF (Anisotropic Conductive Film) instead of the bumps 5 or together with the bumps 5.

Examples of the substrate material for the wiring substrate 3 include glass and ceramic. In order to reduce the warp of the semiconductor chip 2 due to a temperature change, it is preferable that the thermal expansion coefficient of the substrate material of the wiring substrate 3 is close to the thermal expansion coefficient of the substrate material of the semiconductor chip 2. Specifically, the thermal expansion coefficient at 25 ° C. of the substrate material of the wiring substrate 3 is in a range of ± 1.0 × 10 ⁻⁶ / K with respect to the thermal expansion coefficient at 25 ° C. of the substrate material of the semiconductor chip 2. It is preferable to be within. For example, in the case where the semiconductor chip 2 is a silicon chip, when ceramic is used as the substrate material of the wiring substrate 3, LTCC (Low Temperature Co-fired Ceramics) having a thermal expansion coefficient close to that of silicon as the substrate material of the wiring substrate 3 is used. Low temperature co-fired ceramics) or AlN (aluminum nitride) can be used. Further, when the semiconductor chip 2 is a silicon chip, when glass is used as the substrate material of the wiring board 3, for example, NA32R or NA35 of HOYA Corporation, ABC or OA-10G of Nippon Electric Glass Co., Ltd., Asahi Glass Co., Ltd. AN100, Shot Corp. TEMPAX, etc. can be used.

  However, when refining glass with a thermal expansion coefficient close to that of silicon, it is difficult to remove radiation elements that emit α-rays, and the thermal expansion coefficient is close to that of silicon and the amount of α-ray emission is sufficiently reduced. It is difficult to manufacture a glass substrate. In addition, removing radioisotopes such as U (uranium) and Th (thorium) that emit α rays from a ceramic substrate such as LTCC or AlN is also not realistic.

  Therefore, in the present embodiment, a material that is close to the thermal expansion coefficient of the substrate material of the semiconductor chip 2 and emits α rays is used as the substrate material of the wiring substrate 3. But in this invention, the board | substrate material of the wiring board 3 is not restricted to such a material.

  The translucent plate 4 is bonded to the upper surface of the wiring substrate 3 (the surface opposite to the wiring substrate 3) with an adhesive 7 so as to close the opening 3a of the wiring substrate 3. The adhesive 7 is provided over the entire circumference of the opening 3a in the wiring board 3, and the translucent plate 4 is maintained so that the airtightness of the space between the imaging region 2a and the translucent plate 4 is maintained. And the wiring board 3 are sealed.

As a material of the translucent plate 4, for example, glass for measures against α rays (glass in which the amount of α rays emitted is sufficiently reduced), quartz that is an optical low-pass filter, or the like can be used. The thermal expansion coefficient of such a material is generally larger than the thermal expansion coefficient of silicon or the thermal expansion coefficient of the wiring board 3 close to silicon. For example, the thermal expansion coefficient of the α-ray countermeasure glass is ^{5 × 10 -6 / K~7 × 10} -6 / K, the thermal expansion coefficient of the crystal is ^{8 × 10 -6 / K~12 × 10} -6 / K. Therefore, when such a material is used as the material of the translucent plate 4, if the translucent plate 4 and the wiring substrate 3 are firmly bonded, the wiring substrate 3 warps and eventually the semiconductor chip 2 warps. Therefore, it is preferable to use a stress relaxation type relatively soft material as the adhesive 7. Specifically, it is preferable that the Young's modulus of the adhesive 7 after adhesive curing is 1 GPa or less, particularly several MPa to several tens MPa. The material of the translucent plate 4 is not limited to the example described above, and may be a transparent resin, for example.

  In the present embodiment, the layer 8 is provided as an antireflection portion on the end face of the opening 3 a of the wiring board 3. In the present embodiment, the layer 8 is also used as an α ray shielding portion that shields α rays emitted from the substrate material of the wiring board 3. As the layer 8, for example, a resin having a thickness of several tens of μm or more mixed with a black pigment (for example, a resin not mixed with a radioisotope such as U or Th, such as an epoxy resin or an acrylic resin). Can be mentioned. In the present invention, for example, a transparent resin layer having a predetermined thickness in which black pigment is not mixed is used as the layer 8 so that the layer 8 serves as an α-ray shielding portion but does not serve as an antireflection portion. May be.

  If the layer 8 is not provided on the end face of the opening 3a of the wiring board 3, stray light incident from the photographing lens is reflected by the end face of the opening 3a and enters the image pickup area 2a of the semiconductor chip 2. As a result, the image quality of the captured image is degraded. On the other hand, in the present embodiment, since the layer 8 serving as the antireflection portion is provided on the end face of the opening 3a of the wiring board 3, reflection of stray light at the end face of the opening 3a of the wiring board 3 is prevented. As a result, the image quality of the captured image is improved.

  Further, if the layer 8 is not provided on the end face of the opening 3 a of the wiring board 3, α rays emitted from the end face of the opening 3 a of the wiring board 3 enter the imaging region 2 a of the semiconductor chip 2. As a result, noise is generated or a pixel defect is caused, so that the image quality of the captured image is deteriorated. On the other hand, in the present embodiment, since the layer 8 serving as the α-ray shielding portion is provided on the end face of the opening 3a of the wiring board 3, α rays are emitted from the end face of the opening 3a of the wiring board 3. The image quality of the captured image is improved.

  Furthermore, in the present embodiment, since the layer 8 also serves as an antireflection part and an α-ray shielding part, the cost can be reduced as compared with the case where both are provided separately.

[Second Embodiment]
FIG. 3 is a schematic cross-sectional view schematically showing an electronic camera 100 according to the second embodiment of the present invention.

  The solid-state imaging device 1 according to the first embodiment is incorporated in the body 101 of the electronic camera 100 according to the present embodiment. The electronic camera 100 according to the present embodiment is configured as a single-lens reflex type electronic still camera. However, the solid-state imaging device 1 according to the first embodiment is different from other electronic still cameras, video cameras, and mobile phones. You may incorporate in various electronic cameras, such as a camera mounted in.

  In electronic camera 100 according to the present embodiment, body 101 is provided with interchangeable photographic lens 102. The subject light that has passed through the photographing lens 102 is reflected upward by the quick return mirror 103 and forms an image on the screen 104. The subject image formed on the screen 104 is observed from the finder observation window 107 through the eyepiece lens 106 from the penta roof prism 105. When the release button (not shown) is fully pressed, the quick return mirror 103 jumps upward, and the subject image from the photographing lens 102 enters the solid-state imaging device 1 described above.

  The solid-state imaging device 1 is positioned and fixed in the body 101 by being attached to the body 101 via a bracket (not shown) and a position adjusting mechanism (not shown).

  According to the present embodiment, since the solid-state imaging device 1 according to the first embodiment is used, the image quality of the captured image is improved.

[Third Embodiment]
FIG. 4 is a partially enlarged schematic cross-sectional view schematically showing a solid-state imaging device 11 according to the third embodiment of the present invention, and corresponds to FIG. 4, elements that are the same as or correspond to those in FIG. 2 are given the same reference numerals, and redundant descriptions thereof are omitted.

  The present embodiment is different from the first embodiment in that a satin finish portion 12 subjected to a satin finish is provided as an antireflection portion instead of the layer 8 on the end face of the opening 3a of the wiring board 3. It is only a point that is. Light is scattered at the matte portion 12 at the end face of the opening 3a of the wiring board 3, and reflection at the end face is prevented.

  Also in the present embodiment, similar to the first embodiment, reflection of stray light at the end face of the opening 3a of the wiring board 3 is prevented, and the image quality of the captured image is improved.

  In the present embodiment, since the α-ray shielding portion is not provided on the end surface of the opening 3a of the wiring board 3, it is impossible to improve the captured image by the α-ray shielding at the end surface of the opening 3a. Therefore, if necessary, for example, a transparent resin layer having a predetermined thickness is provided on the satin portion 12 as an α-ray shielding portion, and the captured image can be improved by the α-ray shielding at the end surface of the opening 3a. Good.

  The solid-state imaging device 11 according to the present embodiment can be used in place of the solid-state imaging device 1 in the electronic camera 100 according to the second embodiment. This is the same for each solid-state imaging device described later.

[Fourth Embodiment]
FIG. 5 is a partially enlarged schematic cross-sectional view schematically showing a solid-state imaging device 21 according to the fourth embodiment of the present invention, and corresponds to FIG. 5, elements that are the same as or correspond to those in FIG. 2 are given the same reference numerals, and redundant descriptions thereof are omitted.

  This embodiment differs from the first embodiment in that the layer 8 is not provided in the opening 3a of the wiring board 3 and the end face of the opening 3a of the wiring board 3 will be described below. It is a point arranged in.

  Here, the height of the upper surface (surface opposite to the semiconductor chip 2) of the wiring substrate 3 with respect to the surface on the imaging region 2a side of the semiconductor chip 2 is t, and the end surface of the opening 3a of the wiring substrate 3 is imaged. Let d be the distance from the periphery of the region 2a. In FIG. 5, L1 indicates a light beam having an F value of 1.4, and L2 indicates reflected light of a light beam having an F value of 1.4. Illustration of refraction of the light beams L1 and L2 on the upper and lower surfaces of the translucent plate 4 is omitted. Assuming a light flux with an F value of 1.4 as the most inclined oblique incident light as the stray light from the photographing lens, the light beam is reflected at the uppermost portion of the end face of the opening 3a, and is reflected on the semiconductor chip 2 from the uppermost portion. The reaching distance D is represented by D = t / 2.8.

  Actually, since the vignetting of the lens barrel of the photographing lens occurs, if the relationship of d ≧ D is satisfied, the reflected light at the end face of the opening 3a of the stray light is incident on the imaging region 2a. Can be avoided.

  Therefore, by satisfying the relationship of d ≧ t / 2.8 (that is, the end surface of the opening 3a of the wiring board 3 is separated from the periphery of the imaging region 2a by a distance of t / 2.8 or more), the stray light opening It is possible to avoid a deterioration in image quality due to the reflected light at the end face of 3a.

  Therefore, in the present embodiment, it is set so as to satisfy the relationship of d ≧ t / 2.8. Thereby, according to this Embodiment, the image quality fall by the reflected light in the end surface of the opening part 3a of the said stray light can be avoided.

  In the present embodiment, an antireflection part and / or an α-ray shielding part may be provided on the end face of the opening 3 a of the wiring board 3. Specifically, for example, the layer 8 may be provided on the end face of the opening 3a of the wiring substrate 3, the matte part 12, or a transparent resin layer having a predetermined thickness may be provided. These points are the same for each solid-state imaging device described later.

[Fifth Embodiment]
FIG. 6 is a partially enlarged schematic cross-sectional view schematically showing a solid-state imaging device 31 according to the fifth embodiment of the present invention, and corresponds to FIGS. 2 and 5. 6, elements that are the same as or correspond to those in FIGS. 2 and 5 are given the same reference numerals, and redundant descriptions thereof are omitted.

  This embodiment is different from the first embodiment in that the layer 8 is not provided in the opening 3a of the wiring board 3, and the end surface of the opening 3a of the wiring board 3 is tapered. And the end face of the opening 3a of the wiring board 3 is arranged as described below.

  In the present embodiment, the end surface of the opening 3a of the wiring board 3 is a tapered surface having an opening area that extends downward (to the side of the semiconductor chip 2).

In FIG. 6, L3 is a light beam having an F value of 1.4, L4 is a reflected light of a light beam having an F value of 1.4,
L5 indicates a light ray having an F value of 1.4 that wraps around from the outside, and L6 indicates oblique incident light that is not reflected by the end face of the opening 3a.

  In the present embodiment, when the angle of the end face of the opening 3a is θ, the relationship of tan θ ≧ 1 / 2.8 is satisfied. In the present embodiment, the relationship of d ≧ t / 2.8 is satisfied as in the fourth embodiment.

  In the present embodiment, since the relationship of tan θ ≧ 1 / 2.8 is satisfied, there is no oblique incident light having an incident angle larger than the above θ in the light ray incident from the photographing lens. The reflected light at the end face of 3a can be avoided 100% in principle. Therefore, according to the present embodiment, it is possible to avoid deterioration in image quality due to reflected light from the end face of the opening 3a of stray light.

  In the present embodiment, since the relationship of d ≧ t / 2.8 is satisfied, vignetting of the obliquely incident light having an F value of 1.4 that wraps around from the outside by the wiring board 3 can be avoided.

[Sixth Embodiment]
FIG. 7 is a partially enlarged schematic cross-sectional view schematically showing a solid-state imaging device 41 according to the sixth embodiment of the present invention, and corresponds to FIG. In FIG. 7, the same or corresponding elements as those in FIG. 2 are denoted by the same reference numerals, and redundant description thereof is omitted.

  This embodiment differs from the first embodiment in that the layer 8 is not provided in the opening 3a of the wiring board 3 and the outer peripheral end face of the translucent plate 4 is described below. It is a point that is arranged.

  Here, the height of the upper surface (surface opposite to the semiconductor chip 2) of the translucent plate 4 with respect to the surface on the imaging region 2a side of the semiconductor chip 2 is tg, and the outer peripheral end surface of the translucent plate 4 is The distance from the edge of the imaging area 2a on the end face is defined as dg. In FIG. 7, L7 indicates a light beam having an F value of 1.4, and L8 indicates reflected light of a light beam having an F value of 1.4. Assuming a light flux having an F value of 1.4 as the most inclined oblique incident light as the stray light from the photographing lens, the light beam is reflected at the uppermost portion of the outer peripheral end surface of the translucent plate 4, and the semiconductor chip from the uppermost portion. The distance Dg reaching 2 is expressed as Dg = tg / 2.8.

  Actually, vignetting of the lens barrel of the photographing lens occurs. Therefore, if the relationship of dg ≧ Dg is satisfied, the reflected light of the stray light on the outer peripheral end surface of the translucent plate 4 enters the imaging region 2a. You can avoid that.

  Therefore, by satisfying the relationship of dg ≧ tg / 2.8 (that is, the outer peripheral end face of the translucent plate 4 is separated from the periphery of the imaging region 2a by a distance of tg / 2.8 or more), the translucency of the stray light is obtained. It is possible to avoid deterioration in image quality due to reflected light on the outer peripheral end face of the plate 4.

[Seventh Embodiment]
FIG. 8 is a partially enlarged schematic cross-sectional view schematically showing a solid-state imaging device 51 according to a seventh embodiment of the present invention, and corresponds to FIG. 2 and FIG. 8, elements that are the same as or correspond to those in FIGS. 2 and 7 are given the same reference numerals, and redundant descriptions thereof are omitted.

  This embodiment differs from the first embodiment in that the layer 8 is not provided in the opening 3a of the wiring board 3 and the outer peripheral end surface of the translucent plate 4 is a tapered surface. And the outer peripheral end face of the translucent plate 4 are arranged as described below.

  In the present embodiment, the outer peripheral end surface of the translucent plate 4 is a tapered surface that spreads downward (to the semiconductor chip 2 side).

  In FIG. 8, L9 is a light beam having an F value of 1.4, L10 is a light beam having an F value of 1.4 that wraps around from the outside, L11 is a light beam having an F value of 1.4 that wraps around from the outside, and L12 is an outer peripheral end surface of the translucent plate 4. Obliquely incident light that is not reflected is shown.

  In the present embodiment, when the angle of the outer peripheral end face of the translucent plate 4 is θg, the relationship of tan θg ≧ 1 / 2.8 is satisfied. Further, in the present embodiment, as in the sixth embodiment, the relationship dg ≧ tg / 2.8 is satisfied.

  In the present embodiment, since the relationship of tan θg ≧ 1 / 2.8 is satisfied, there is no oblique incident light having an incident angle larger than the above θg in the light incident from the photographing lens. In principle, the reflected light on the outer peripheral end face of the insulating plate 4 can be avoided 100%. Therefore, according to the present embodiment, it is possible to avoid deterioration in image quality due to the reflected light on the outer peripheral end face of the translucent plate 4 of stray light.

  Further, in the present embodiment, since the relationship dg ≧ tg / 2.8 is satisfied, vignetting by the end of the translucent plate 4 of the obliquely incident light having an F value of 1.4 that wraps around from the outside is avoided. Can do.

[Eighth Embodiment]
FIG. 9 is a partially enlarged schematic cross-sectional view schematically showing a solid-state imaging device 61 according to the eighth embodiment of the present invention, and corresponds to FIGS. 2 and 7. 9, elements that are the same as or correspond to those in FIGS. 2 and 7 are given the same reference numerals, and redundant descriptions thereof are omitted.

  This embodiment differs from the first embodiment in that the layer 8 is not provided in the opening 3a of the wiring board 3 and the outer peripheral end face of the translucent plate 4 is A member 62 having a refractive index for reducing the reflection of light is provided, and, similarly to the sixth embodiment, the relationship of dg ≧ tg / 2.8 is satisfied.

  The refractive index of the member 62 may be larger than 1, and in this case, reflection of light at the outer peripheral end face can be reduced. However, in order to further reduce the reflection of light at the outer peripheral end face, the refractive index of the member 62 is preferably substantially the same as the refractive index of the translucent plate 4. The member 62 may be a resin formed by coating or the like, for example. In the present embodiment, a transparent member is used as the member 62.

  In the present embodiment, since the member 62 is provided on the outer peripheral end surface of the translucent plate 4, the oblique incident light beam traveling from the inside of the translucent plate 4 to the outside is generated on the outer peripheral end surface of the translucent plate 4. Light rays reflected again into the translucent plate 4 can be reduced or completely eliminated, and the reflected light from the outer peripheral end face of the translucent plate 4 can be prevented from entering the imaging region 2a.

  Further, in the present embodiment, since the relationship dg ≧ tg / 2.8 is satisfied, vignetting by the end of the translucent plate 4 of the obliquely incident light having an F value of 1.4 that wraps around from the outside is avoided. Can do.

  In the present embodiment, similarly to the seventh embodiment, the outer peripheral end surface of the translucent plate 4 may be a tapered surface that spreads downward.

  As mentioned above, although each embodiment of this invention and its modification were demonstrated, this invention is not limited to these.

DESCRIPTION OF SYMBOLS 1, 11, 21, 31, 41, 51, 61 Solid-state imaging device 2 Semiconductor chip 2a Imaging area 3 Wiring board 3a Opening 4 Translucent board 8 layers 12 Pears 100

Claims (10)

A semiconductor chip having an imaging region;
A wiring board having an opening in a region including a region facing the imaging region, an antireflection portion provided on an end surface of the opening, and bonded to a surface on the imaging region side of the semiconductor chip;
A translucent plate bonded to the surface of the wiring board opposite to the semiconductor chip so as to close the opening;
A solid-state imaging device comprising: The wiring board is made of a substrate material that emits α rays,
The end face of the opening is provided with an α-ray shielding part that shields α-rays emitted from the substrate material.
The solid-state imaging device according to claim 1.   When the height of the surface of the wiring board opposite to the semiconductor chip with respect to the surface of the semiconductor chip on the imaging region side is defined as t, the end surface of the opening is t / The solid-state imaging device according to claim 1 or 2, characterized in that the distance is 2.8 or more.   When the height of the surface of the translucent plate opposite to the semiconductor chip with respect to the surface of the semiconductor chip on the imaging region side is defined as tg, the outer peripheral end surface of the translucent plate is the imaging region. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is separated from the peripheral edge by a distance of tg / 2.8 or more.   5. The solid-state imaging device according to claim 1, wherein a member having a refractive index that reduces reflection of light on the outer peripheral end surface is provided on an outer peripheral end surface of the translucent plate. A semiconductor chip having an imaging region;
A wiring substrate having an opening in a region including the region facing the imaging region, bonded to the surface of the semiconductor chip on the imaging region side, and made of a substrate material that emits α rays;
An α-ray shielding portion that is formed on an end surface of the opening and shields α-rays emitted from the substrate material;
A translucent plate bonded to the surface of the wiring board opposite to the semiconductor chip so as to close the opening;
A solid-state imaging device comprising: A semiconductor chip having an imaging region;
An opening is provided in a region including a region facing the imaging region, and an end surface of the opening is a tapered surface in which an opening area increases toward the semiconductor chip, and the imaging in the semiconductor chip A wiring board bonded to the area side surface;
A translucent plate bonded to the surface of the wiring board opposite to the semiconductor chip so as to close the opening;
A solid-state imaging device comprising: A semiconductor chip having an imaging region;
A wiring board having an opening in a region including a region facing the imaging region and bonded to a surface of the semiconductor chip on the imaging region side;
A translucent plate that is a tapered surface that is bonded to a surface of the wiring board opposite to the semiconductor chip so as to close the opening, and whose outer peripheral end surface extends toward the semiconductor chip;
A solid-state imaging device comprising: The thermal expansion coefficient at 25 ° C. of the substrate material of the wiring board is within a range of ± 1.0 × 10 ⁻⁶ / K with respect to the thermal expansion coefficient at 25 ° C. of the substrate material of the semiconductor chip. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is characterized in that:   An electronic camera comprising the solid-state imaging device according to claim 1.

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