JPS6330780B2 - - Google Patents
Info
- Publication number
- JPS6330780B2 JPS6330780B2 JP57120891A JP12089182A JPS6330780B2 JP S6330780 B2 JPS6330780 B2 JP S6330780B2 JP 57120891 A JP57120891 A JP 57120891A JP 12089182 A JP12089182 A JP 12089182A JP S6330780 B2 JPS6330780 B2 JP S6330780B2
- Authority
- JP
- Japan
- Prior art keywords
- position detection
- chip
- mark
- shows
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000012360 testing method Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 description 13
- 238000003745 diagnosis Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57120891A JPS5911619A (ja) | 1982-07-12 | 1982-07-12 | 半導体装置の非接触試験方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57120891A JPS5911619A (ja) | 1982-07-12 | 1982-07-12 | 半導体装置の非接触試験方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5911619A JPS5911619A (ja) | 1984-01-21 |
JPS6330780B2 true JPS6330780B2 (US06653308-20031125-C00199.png) | 1988-06-21 |
Family
ID=14797541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57120891A Granted JPS5911619A (ja) | 1982-07-12 | 1982-07-12 | 半導体装置の非接触試験方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5911619A (US06653308-20031125-C00199.png) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63109873U (US06653308-20031125-C00199.png) * | 1986-12-27 | 1988-07-15 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02191359A (ja) * | 1988-01-22 | 1990-07-27 | Matsushita Electric Ind Co Ltd | スタンダードセルおよびこれを用いた半導体集積回路装置 |
JP5102989B2 (ja) * | 2006-08-08 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9983257B2 (en) | 2015-10-15 | 2018-05-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Test line patterns in split-gate flash technology |
US10163522B2 (en) * | 2015-10-15 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Test line letter for embedded non-volatile memory technology |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4916460A (US06653308-20031125-C00199.png) * | 1972-05-22 | 1974-02-13 | ||
JPS5150672A (ja) * | 1974-10-30 | 1976-05-04 | Hitachi Ltd | Kijunfureemu |
JPS51110974A (US06653308-20031125-C00199.png) * | 1975-03-25 | 1976-09-30 | Sanyo Electric Co | |
JPS55162219A (en) * | 1979-06-05 | 1980-12-17 | Nec Corp | Semiconductor wafer |
-
1982
- 1982-07-12 JP JP57120891A patent/JPS5911619A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4916460A (US06653308-20031125-C00199.png) * | 1972-05-22 | 1974-02-13 | ||
JPS5150672A (ja) * | 1974-10-30 | 1976-05-04 | Hitachi Ltd | Kijunfureemu |
JPS51110974A (US06653308-20031125-C00199.png) * | 1975-03-25 | 1976-09-30 | Sanyo Electric Co | |
JPS55162219A (en) * | 1979-06-05 | 1980-12-17 | Nec Corp | Semiconductor wafer |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63109873U (US06653308-20031125-C00199.png) * | 1986-12-27 | 1988-07-15 |
Also Published As
Publication number | Publication date |
---|---|
JPS5911619A (ja) | 1984-01-21 |
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