JPS6330780B2 - - Google Patents
Info
- Publication number
- JPS6330780B2 JPS6330780B2 JP57120891A JP12089182A JPS6330780B2 JP S6330780 B2 JPS6330780 B2 JP S6330780B2 JP 57120891 A JP57120891 A JP 57120891A JP 12089182 A JP12089182 A JP 12089182A JP S6330780 B2 JPS6330780 B2 JP S6330780B2
- Authority
- JP
- Japan
- Prior art keywords
- position detection
- chip
- mark
- shows
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000012360 testing method Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 description 13
- 238000003745 diagnosis Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Description
【発明の詳細な説明】
本発明は、位置検出用のマークをチツプ上で規
則的に複数配置した半導体装置を用いた非接触の
試験または診断方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a non-contact testing or diagnosis method using a semiconductor device in which a plurality of marks for position detection are regularly arranged on a chip.
集積回路技術の進歩により、その規模がLSIか
らVLSIに向かおうとしているが、それらの試験
の容易性(テスタビリテイ)は益々困難さを増し
つつある。そのため、最近では非接触による試験
や診断が行なわれるようになつた。現在、非接触
による試験や診断はICチツプを一度で全面にわ
たつて、行うのではなく、チツプの一部分を拡大
しながら行つている。したがつて、ある部分から
次の部分へ移動するときには、いちいちICパタ
ーン図と照合しながら行つている。 As integrated circuit technology advances, the scale of integrated circuits is shifting from LSI to VLSI, but the testability of these circuits is becoming increasingly difficult. For this reason, non-contact testing and diagnosis have recently begun to be performed. Currently, non-contact testing and diagnosis are performed by enlarging a portion of the chip, rather than covering the entire surface of the IC chip at once. Therefore, when moving from one part to the next, one must check each part against the IC pattern diagram.
本発明では、この不便さをなくすためにICチ
ツプに位置検出用のマークを規則的に配置した半
導体装置を用いた非接触の試験方法を提供するこ
とにある。 In order to eliminate this inconvenience, the present invention provides a non-contact testing method using a semiconductor device in which position detection marks are regularly arranged on an IC chip.
以下にその実施例を図面を参照しながら説明す
る。 Examples thereof will be described below with reference to the drawings.
第1図は、ICチツプ上に本発明の記号を規則
的に配置する例の1つとして格子状の交点の例を
示したものである。図中の“1”は半導体基板で
あり、“2”はボンデイング・パツド、“3”の斜
線部分は内部回路部分、“4”の小さな丸印は格
子の交点位置でこの部分に位置検出マークを配置
する。 FIG. 1 shows an example of grid-like intersections as one example of regularly arranging the symbols of the present invention on an IC chip. In the figure, "1" is the semiconductor substrate, "2" is the bonding pad, "3" is the shaded area is the internal circuit, and "4" is the small circle mark at the intersection of the grid, and this is the position detection mark. Place.
第2図は、第1図のICチツプの一部分を拡大
したものである。この図では第1図の格子交点位
置“4”に英数字の記号“8”を配置したことを
示したものである。図中の“5”は半導体基板で
あり、“6”はボンデイング・パツド、“7”の斜
線部分は内部回路部分である。 Figure 2 is an enlarged view of a portion of the IC chip in Figure 1. This figure shows that the alphanumeric symbol "8" is placed at the grid intersection position "4" in FIG. In the figure, ``5'' is a semiconductor substrate, ``6'' is a bonding pad, and ``7'' is an internal circuit portion.
第3図は、第2図と同様に、第1図のICチツ
プの一部分を拡大したものである。第2図と異な
るところは、位置検出マークが第2図は英数字で
あるが、第3図は幾何学的模様“12”を格子交
点に配置したことである。格子交点に配置するマ
ークの形状は非接触で試験または診断するときに
位置検出が行い易いものを使えば良い。図中で
“9”は半導体基板、“10”はボンデイング・パ
ツド、“11”の斜線部分は内部回路部分を示す。 Similar to FIG. 2, FIG. 3 is an enlarged view of a portion of the IC chip in FIG. The difference from FIG. 2 is that the position detection marks in FIG. 2 are alphanumeric characters, but in FIG. 3, geometric patterns "12" are arranged at grid intersections. The shapes of the marks placed at grid intersections may be such that their positions can be easily detected during non-contact testing or diagnosis. In the figure, ``9'' indicates a semiconductor substrate, ``10'' indicates a bonding pad, and ``11'' indicates an internal circuit section.
第4図は非接触による試験法の1つである、電
子ビーム・プローブを使つた電位測定において、
被測定ICチツプの一部分を拡大してCRT上に映
したところを示している。CRT上に映し出した
像は第2図で示したICチツプの一部分を拡大し
たものである。図中の“13”は試験装置の
CRTを示し、“14”は画面に映し出されたICチ
ツプの一部分を示している。 Figure 4 shows potential measurement using an electron beam probe, which is one of the non-contact testing methods.
A portion of the IC chip under test is shown enlarged and projected on a CRT. The image projected on the CRT is an enlarged portion of the IC chip shown in Figure 2. “13” in the diagram is the test equipment.
It shows a CRT, and "14" shows a part of the IC chip displayed on the screen.
第5図は第4図で示したCRTの画面をさらに
拡大したものである。この画面では格子交点のマ
ークとして英字「B」しか映つていないが、この
1個のマークには方向性があるためチツプのどの
部分であるかの判断には、これで十分である。つ
まり、CRTの画面上、あるいは試験、診断のフ
イールドのどこかに1個でも位置検出マークがあ
れば、それによつて認識が出来ることになる。図
中の“15”は試験装置のCRTを示し、“16”
は画面に映し出されたICチツプの一部拡大図を
示している。 FIG. 5 shows a further enlarged view of the CRT screen shown in FIG. This screen only shows the letter "B" as a grid intersection mark, but since this single mark has directionality, this is sufficient to determine which part of the chip it is on. In other words, if there is even one position detection mark anywhere on the CRT screen or in the test or diagnosis field, recognition is possible. "15" in the figure indicates the CRT of the test device, "16"
shows an enlarged view of a portion of the IC chip displayed on the screen.
第6図は位置検出マークの形状についての一例
である。この数字マーク“17”を金属配線形成
時に同一材料で同時に形成してしまう。幅は5μ
m、大きさ(長さ)が30μm角、厚さ1μm位いあ
りこれを電子ビームでスキヤンすれば、位置検出
に必要なデータが得られる。 FIG. 6 shows an example of the shape of the position detection mark. This number mark "17" is formed simultaneously with the same material when forming the metal wiring. Width is 5μ
The size (length) is about 30 μm square and 1 μm thick.If this is scanned with an electron beam, the data necessary for position detection can be obtained.
第7図a,bも第6図と同じように、位置検出
マークの形状についての一例である。この幾何学
的マークは半導体基板をエツチングすることによ
り溝を形成するもので、その最小線幅、最小間隔
は2μm、エツチングの深さは1μm程度である。
これを電子ビームでスキヤンすれば位置検出に必
要なデータが得られる。図中の“18,21”は
半導体基板を示し、“19,20,22,23”
は溝を示している。第6,7図以外にも多結晶シ
リコンなどを形成するときに同時に作成する方法
がある。 Similarly to FIG. 6, FIGS. 7a and 7b also show examples of the shape of the position detection mark. This geometric mark is formed by etching a semiconductor substrate to form a groove, and the minimum line width and minimum interval thereof are 2 μm, and the etching depth is approximately 1 μm.
By scanning this with an electron beam, the data necessary for position detection can be obtained. "18, 21" in the figure indicates the semiconductor substrate, "19, 20, 22, 23"
indicates a groove. In addition to the methods shown in FIGS. 6 and 7, there is a method of simultaneously forming polycrystalline silicon and the like.
第8図は位置検出マークの配置を菱形にしたも
のである。マークの配置は格子、菱形、三角形、
X字形など規則的なものであれば、配置形状がど
のようなものであれ可能である。図中の“24”
は半導体基板を示し、“25”は位置検出マーク
の配置を示す。 In FIG. 8, the position detection marks are arranged in a diamond shape. The mark arrangement is grid, diamond, triangle,
Any arrangement shape is possible as long as it is regular, such as an X-shape. “24” in the diagram
indicates a semiconductor substrate, and "25" indicates the arrangement of position detection marks.
以上のような、本発明の効果には次の様なこと
が考えられる。 The following effects can be considered as the effects of the present invention as described above.
(1) 位置検出マークを規則的に配置することによ
り非接触による試験と診断をCRT上で確認し
やすくなる。(1) Regularly arranging position detection marks makes it easier to confirm non-contact testing and diagnosis on a CRT.
(2) 位置検出マークにより画像処理を使つた試
験・診断のデータ整理が簡単になる。(2) Position detection marks make it easier to organize test and diagnostic data using image processing.
(3) 位置検出マークの配置形状の種類が多数あり
その中からICパターンに応じて適当なものを
選べる。(3) There are many types of placement shapes for position detection marks, from which one can be selected according to the IC pattern.
第1図は半導体基板上の位置検出マークを配置
する格子交点を示し、第2図は英数字の位置検出
マークを配置したICチツプの一部分、第3図は
幾何学的位置検出マークを配置したICチツプの
一部分、第4図はCRT上に映し出した位置検出
マークのあるICチツプの一部分、第5図は第4
図の一部分をさらに拡大したICチツプの一部分、
第6図は数字マークの一例の平面図、第7図a,
bは幾何学的マークの一例の平面図及び断面図、
第8図は半導体基板の位置検出マーク配置を菱形
交点上に行うことを示した概略図を示す。
なお図において、1……半導体基板、2……ボ
ンデイングパツド、3……内部回路部分、4……
格子形交点位置、5……半導体基板、6……ボン
デイングパツド、7……内部回路部分、8……英
数字形位置検出マーク、9……半導体基板、10
……ボンデイングパツド、11……内部回路部
分、12……幾何学的位置検出マーク、13……
電子ビーム・テスタのCRT、14……ICチツプ
の部分拡大画像、15……電子ビーム・テスタの
CRT、16……ICチツプの部分拡大画像、17
……数字形の位置検出マーク、19,20……幾
何学的位置検出マーク(溝)、22,23……幾
何学的位置検出マークの断面(溝)、21……半
導体基板、24……半導体基板、25……位置検
出マーク配置用菱形交点位置、である。
Figure 1 shows grid intersections at which position detection marks are placed on a semiconductor substrate, Figure 2 shows a portion of an IC chip where alphanumeric position detection marks are placed, and Figure 3 shows a portion of an IC chip where geometric position detection marks are placed. Part of the IC chip, Figure 4 shows a part of the IC chip with the position detection mark projected on the CRT, Figure 5 shows the part of the IC chip with the position detection mark projected on the CRT.
A part of the IC chip, which is a further enlargement of a part of the diagram.
Figure 6 is a plan view of an example of a number mark, Figure 7a,
b is a plan view and a cross-sectional view of an example of a geometric mark;
FIG. 8 is a schematic diagram showing how position detection marks on a semiconductor substrate are arranged on rhombic intersections. In the figure, 1... semiconductor substrate, 2... bonding pad, 3... internal circuit part, 4...
Grid intersection position, 5... Semiconductor substrate, 6... Bonding pad, 7... Internal circuit portion, 8... Alphanumeric position detection mark, 9... Semiconductor substrate, 10
... Bonding pad, 11 ... Internal circuit part, 12 ... Geometric position detection mark, 13 ...
CRT of electron beam tester, 14... Partial enlarged image of IC chip, 15... Electron beam tester
CRT, 16... Partially enlarged image of IC chip, 17
... Numerical position detection mark, 19, 20 ... Geometric position detection mark (groove), 22, 23 ... Cross section of geometric position detection mark (groove), 21 ... Semiconductor substrate, 24 ... Semiconductor substrate, 25 . . . rhombic intersection position for position detection mark placement.
Claims (1)
それぞれの形状が異なる位置検出マークを多数規
則的に散在させて配置した半導体チツプを形成し
た後、該半導体チツプ内の非接触試験を行なう所
定部分の位置を該所定部分近傍の位置検出マーク
の形状によつて、認識することを特徴とする半導
体装置の非接触試験方法。1 Over almost the entire area on a semiconductor chip,
After forming a semiconductor chip in which a large number of position detection marks with different shapes are regularly scattered and arranged, the position of a predetermined portion of the semiconductor chip to be subjected to a non-contact test is determined by determining the shape of the position detection marks near the predetermined portion. 1. A non-contact testing method for a semiconductor device, characterized by recognizing the semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57120891A JPS5911619A (en) | 1982-07-12 | 1982-07-12 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57120891A JPS5911619A (en) | 1982-07-12 | 1982-07-12 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5911619A JPS5911619A (en) | 1984-01-21 |
JPS6330780B2 true JPS6330780B2 (en) | 1988-06-21 |
Family
ID=14797541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57120891A Granted JPS5911619A (en) | 1982-07-12 | 1982-07-12 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5911619A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63109873U (en) * | 1986-12-27 | 1988-07-15 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02191359A (en) * | 1988-01-22 | 1990-07-27 | Matsushita Electric Ind Co Ltd | Standard cell and semiconductor integrated circuit device using same |
JP5102989B2 (en) * | 2006-08-08 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
US10163522B2 (en) | 2015-10-15 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Test line letter for embedded non-volatile memory technology |
US9983257B2 (en) | 2015-10-15 | 2018-05-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Test line patterns in split-gate flash technology |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4916460A (en) * | 1972-05-22 | 1974-02-13 | ||
JPS5150672A (en) * | 1974-10-30 | 1976-05-04 | Hitachi Ltd | KIJUNFUREEMU |
JPS51110974A (en) * | 1975-03-25 | 1976-09-30 | Sanyo Electric Co | |
JPS55162219A (en) * | 1979-06-05 | 1980-12-17 | Nec Corp | Semiconductor wafer |
-
1982
- 1982-07-12 JP JP57120891A patent/JPS5911619A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4916460A (en) * | 1972-05-22 | 1974-02-13 | ||
JPS5150672A (en) * | 1974-10-30 | 1976-05-04 | Hitachi Ltd | KIJUNFUREEMU |
JPS51110974A (en) * | 1975-03-25 | 1976-09-30 | Sanyo Electric Co | |
JPS55162219A (en) * | 1979-06-05 | 1980-12-17 | Nec Corp | Semiconductor wafer |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63109873U (en) * | 1986-12-27 | 1988-07-15 |
Also Published As
Publication number | Publication date |
---|---|
JPS5911619A (en) | 1984-01-21 |
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