JPS63300427A - Production of magnetic recording medium - Google Patents
Production of magnetic recording mediumInfo
- Publication number
- JPS63300427A JPS63300427A JP13606987A JP13606987A JPS63300427A JP S63300427 A JPS63300427 A JP S63300427A JP 13606987 A JP13606987 A JP 13606987A JP 13606987 A JP13606987 A JP 13606987A JP S63300427 A JPS63300427 A JP S63300427A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic recording
- magnetic
- recording medium
- intermediate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010410 layer Substances 0.000 claims abstract description 66
- 239000011241 protective layer Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 17
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 10
- 239000011733 molybdenum Substances 0.000 claims abstract description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 9
- 239000010937 tungsten Substances 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 12
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000012423 maintenance Methods 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 10
- 239000011651 chromium Substances 0.000 description 10
- 230000003068 static effect Effects 0.000 description 10
- 229910052804 chromium Inorganic materials 0.000 description 9
- 229910017052 cobalt Inorganic materials 0.000 description 8
- 239000010941 cobalt Substances 0.000 description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 8
- 230000002950 deficient Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 235000012489 doughnuts Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- -1 medilene Chemical compound 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、磁気記録媒体に用いられる磁気記録媒体の製
造方法に係り、特に、耐湿性等が良好で高い耐候性を有
する磁気記録媒体の製造方法に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method for manufacturing a magnetic recording medium used in a magnetic recording medium, and in particular to a method for manufacturing a magnetic recording medium that has good moisture resistance and high weather resistance. Regarding the manufacturing method.
従来の磁気記録媒体の製造方法としては、例えば以下に
記すものが知られている。As conventional methods for manufacturing magnetic recording media, the following methods are known, for example.
すなわち、第４図に示すように、高１！度研摩したドー
ナッツ板状のソーダライムガラスからなる非磁性支持体
１の一生表面上に、スパッタリング法により、クロムか
らなる下地層２．コバルトとニッケルとクロムとからな
る磁性層３を順次積層し、次にメタン等の炭化水素を含
有してなる雰囲気中でＲＦ−プラズマＣＶＤ法等の高周
波グローａ電法により、炭素を含有してなる保護層４を
磁性Ｈ３上に被着して磁気記録媒体５を製造している。In other words, as shown in Figure 4, high school 1! A base layer 2 made of chromium is deposited on the surface of a non-magnetic support 1 made of soda lime glass in the shape of a donut plate that has been polished by a sputtering method. A magnetic layer 3 made of cobalt, nickel, and chromium is sequentially laminated, and then a carbon-containing layer 3 is deposited using a high-frequency glow electrolysis method such as an RF-plasma CVD method in an atmosphere containing hydrocarbons such as methane. A magnetic recording medium 5 is manufactured by depositing a protective layer 4 on the magnetic H3.
しかしながら、上記した方法によって製造した磁気記録
媒体５においては、以下に記すような問題点が生じる。However, the magnetic recording medium 5 manufactured by the method described above has the following problems.
磁気記録媒体５の磁性層３には磁気ヘッドにより情報の
書き込み（情報の記録）が行われ、そして書き込まれた
情報は磁性層３に長期囚保持されることが要求される。Information is written (recorded) in the magnetic layer 3 of the magnetic recording medium 5 by a magnetic head, and the written information is required to be retained in the magnetic layer 3 for a long period of time.
そこで、磁性層３上に保護層４を被着・形成して磁性層
３が温度及び湿度等の条件により影響を受けて化学的に
変化することを防止し、磁性層３に情報を長期間保持し
ようとしている。Therefore, a protective layer 4 is deposited and formed on the magnetic layer 3 to prevent the magnetic layer 3 from being chemically changed due to the influence of conditions such as temperature and humidity, and to retain information in the magnetic layer 3 for a long period of time. trying to hold.
ところが、前述したようにして保ｍｌ！３４を形成して
も、長い期間が経過すると磁性層３に書き込まれた情報
が消失してしまう。この原因は、上記保護層４が、温度
及び湿度等の条件に起因する磁性層３の化学的変化を有
効に防止しえないためである。However, as mentioned above, it is not possible! Even if the magnetic layer 34 is formed, the information written in the magnetic layer 3 will disappear after a long period of time. This is because the protective layer 4 cannot effectively prevent chemical changes in the magnetic layer 3 caused by conditions such as temperature and humidity.
本発明は、以上のような事情を鑑みてなされたものであ
り、温度及び湿度等の条件に充分な耐性を有する、すな
わち高い耐候性を有して、情報を長期間確実に保持する
ことができる磁気記録媒体の製造方法を提供することを
目的とする。The present invention has been made in view of the above circumstances, and has sufficient resistance to conditions such as temperature and humidity, that is, has high weather resistance, and is capable of reliably retaining information for a long period of time. The purpose of the present invention is to provide a method of manufacturing a magnetic recording medium that can be manufactured using the following methods.
本発明は、上記した目的を達成するためになされたもの
であり、非磁性支持体の主表面上に磁性層を被着する工
程と、スパッタリング法によりタングステン及びモリブ
デンのうち少なくとも一つを含有してなる中間層を前記
磁性層上に被着する工程と、高周波グロー放電法により
炭素を含有してなる保護層を前記中間層上に被着づる工
程とを有していることを特徴とする。The present invention has been made to achieve the above-mentioned object, and includes a step of depositing a magnetic layer on the main surface of a non-magnetic support, and a step of depositing a magnetic layer containing at least one of tungsten and molybdenum by a sputtering method. and a step of depositing a protective layer containing carbon on the intermediate layer by a high frequency glow discharge method. .
磁性層上にスパッタリング法により形成された、タング
ステン及びモリブデンのうち少なくとも一つを含有して
なる中間層、及びこの中間層−ヒに高周波グロー放電法
により形成された炭素を含有してなる保護層は、磁気記
録媒体の耐候性を向上させる。An intermediate layer containing at least one of tungsten and molybdenum formed on the magnetic layer by a sputtering method, and a protective layer containing carbon formed on this intermediate layer by a high-frequency glow discharge method. improves the weather resistance of magnetic recording media.
以下、第１図を参照して、本発明の第１実施例による磁
気記録媒体の製造方法につい′Ｃ説明する。Hereinafter, a method for manufacturing a magnetic recording medium according to a first embodiment of the present invention will be explained with reference to FIG.
先ず、ドーナツツ板状に研削加工したソーダライムガラ
スの両生表面を高精度研摩して非磁性支持体６（寸法：
外径１６０＃ｌＩ、内径４０ｍ、厚み１．９１ＩＩＩＩ
）を製作する。次に、この非磁性支持体６をイソプロピ
ルアルコール、純水等を用いて洗浄する。First, a non-magnetic support 6 (dimensions:
Outer diameter 160#lI, inner diameter 40m, thickness 1.91III
). Next, this nonmagnetic support 6 is washed using isopropyl alcohol, pure water, or the like.
次に、非磁性支持体６を金属製の基板保持具（図示せず
。）によって保持しマグネトロンスパッタリング装置の
処理室内に配置する。次いで、この処理室内を真空ポン
プによってＩ Ｘ １Ｏ−６ＴＯｒｒの真空度にする。Next, the nonmagnetic support 6 is held by a metal substrate holder (not shown) and placed in a processing chamber of a magnetron sputtering apparatus. Next, the inside of this processing chamber is brought to a vacuum level of I x 10-6 TOrr using a vacuum pump.
次いで、表１に示す条件下で、非磁性支持体６の主表面
上にスパッタリング法により、クロムからなる下地層７
（膜厚： ２０００人）、コバルトとニッケルとクロム
とからなる磁性層８（膜厚ニア００人）、タングステン
からなる中間１３９ （ｍｌ厚＝１００人）を順次積層
した。なお、下地層７の成膜時にはクロムからなるター
ゲットを、磁性Ｗ！Ｊ８の成膜時にはコバルトとニッケ
ルとクロムとの合金からなるターゲットを、中間層９の
成膜時にはタングステンからなるターゲットをそれぞれ
用いた。Next, under the conditions shown in Table 1, a base layer 7 made of chromium is formed on the main surface of the nonmagnetic support 6 by sputtering.
(film thickness: 2000 layers), a magnetic layer 8 (film thickness near 00 layers) made of cobalt, nickel, and chromium, and an intermediate layer 139 (ml thickness = 100 layers) made of tungsten were sequentially laminated. Note that when forming the underlayer 7, a target made of chromium was used as a magnetic W! A target made of an alloy of cobalt, nickel, and chromium was used when forming the film J8, and a target made of tungsten was used when forming the intermediate layer 9.
表１
引き続いて、アルゴンガスを排出した前記装置の処理室
内にメタンガスをる入し、前記した基板保持具をカソー
ド（バイアス側）としその基板保持具を通して、下地Ｆ
１７．磁性層８及び中間層９を積層した非磁性支持体６
に高周波電力（周波数：１３．５６ Ｈｌｔｚ）を印加
するグロー放゛電法により、中間層９上に炭素を含有し
てなる保ＩＦ１１０（膜厚：２５０人）を成膜して磁気
記録媒体１１を製造した。Table 1 Subsequently, methane gas is introduced into the processing chamber of the apparatus from which the argon gas has been exhausted, and the substrate holder is used as a cathode (bias side) to pass through the substrate holder and the substrate F is heated.
17. Non-magnetic support 6 laminated with magnetic layer 8 and intermediate layer 9
A protective IF 110 (thickness: 250 mm) containing carbon is formed on the intermediate layer 9 by a glow emission method in which high frequency power (frequency: 13.56 Hltz) is applied to the magnetic recording medium 11. was manufactured.
なお、保護層１０の成膜条件は、メタンガス流１５０３
ＣＣＨ，処理室内圧力５ ｘ １Ｏ−３Ｔｏｒｒ、高周
波電力密度０゜２Ｗ／ｍである。Note that the film forming conditions for the protective layer 10 are as follows: methane gas flow 1503
CCH, processing chamber pressure 5 x 1O-3 Torr, high frequency power density 0°2 W/m.
次に、第２図を参照して、本発明の第２実施例による磁
気記録媒体の製造方法について説明する。Next, a method for manufacturing a magnetic recording medium according to a second embodiment of the present invention will be described with reference to FIG.
先ず、前記実施例と同様に、非磁性支持体６をマグネト
ロンスパッタリング装置の処理室内に配胃し、処理室内
を１ Ｘ １Ｏ−６Ｔｏｒｒの真空度にする。First, in the same manner as in the above embodiment, the nonmagnetic support 6 is placed in the processing chamber of a magnetron sputtering apparatus, and the vacuum level in the processing chamber is made to be 1.times.10.sup.-6 Torr.
次いで、表２に示す条件下で、非磁性支持体６の主表面
上にスパッタリング法により、クロムからなる下地層１
２（膜厚： ３０００人）、コバルトとニッケルとクロ
ムとからなる磁性層１３（膜厚： ＳＯＯ人）、モリ
ブデンからなる中間層１４（膜厚：１５０人）を順次積
層した。なお、下地層１２の成膜時及び磁性層１３の成
膜時には前記実施例中に記したと。Next, under the conditions shown in Table 2, a base layer 1 made of chromium is formed on the main surface of the nonmagnetic support 6 by sputtering.
2 (film thickness: 3,000 layers), a magnetic layer 13 (film thickness: SOO layer) made of cobalt, nickel, and chromium, and an intermediate layer 14 (film thickness: 150 layers) made of molybdenum were sequentially laminated. It should be noted that the steps in forming the underlayer 12 and the magnetic layer 13 are as described in the above embodiments.
同様なターゲットを、中間層１４の成膜時にはモリブデ
ンからなるターゲットをそれぞれ用いた。A similar target made of molybdenum was used when forming the intermediate layer 14.
表２
引き続いて、アルゴンガスを排出した前記装置の処ｌ！
Ｉ！室内にエタンガスを導入し、前記した基板保持具を
カソードとしその基板保持具を通して、下地層１２．磁
性層１３及び中間層１４を積層した非磁性支持体６に高
周波電力（周波数： １３．５６ＨＨ７）を印加するグ
ロー放電法により、中間層１４上に炭素を含有してなる
保護層１５（膜厚：２００人）を成膜して磁気記録媒体
１６を￥ｌＪ造した。なお、保護層１５の成膜条件はエ
タンガス流ｆｉ１５０３ＣＣＨ、処理室内圧力１ ｘ
１０’Ｔｏｒｒ、高周波電力密度０．１１４／ｃｊであ
る。Table 2 Subsequently, the treatment of the device after exhausting argon gas!
I! Ethane gas is introduced into the chamber, and the base layer 12 is passed through the substrate holder using the substrate holder described above as a cathode. A protective layer 15 (thickness: 200 people) to form a magnetic recording medium 16 for ¥1J. The film forming conditions for the protective layer 15 are: ethane gas flow fi1503CCH, processing chamber pressure 1x
10' Torr, high frequency power density 0.114/cj.
次に、比較例として第３図に示すような磁気記録媒体１
７を製造した。Next, as a comparative example, a magnetic recording medium 1 as shown in FIG.
7 was manufactured.
この磁気記録媒体１１は、上記第２実施例中で製造した
磁気記録媒体１６の中間口１４の成膜を省略して、非磁
性支持体６の主表面上に下地１９１２．＠住居１３及び
保護層１５を順次積層したものである。This magnetic recording medium 11 is produced by omitting the film formation at the intermediate opening 14 of the magnetic recording medium 16 manufactured in the second embodiment, and forming a base layer 1912 on the main surface of the nonmagnetic support 6. @A housing 13 and a protective layer 15 are sequentially laminated.
ここで、上記したようにしてそれぞれ製造した磁気記録
媒体１１．１６及び１７の性能を評価するために、以下
に記すように、情報を書き込んだトラックにおける欠陥
発生トラック数、静止摩擦係数及び耐久性の測定を行っ
た。Here, in order to evaluate the performance of the magnetic recording media 11.16 and 17 manufactured as described above, the number of defective tracks in the tracks on which information was written, the coefficient of static friction, and the durability were evaluated as described below. Measurements were made.
ここで、情報を書ぎ込んだトラックにおける欠陥の発生
とは、情報を書き込んだトラック（磁気記録媒体の情報
記録帯）の情報信号が時間の経過に伴って消失してしま
うことをいう。Here, the occurrence of a defect in a track in which information is written means that the information signal in the track (information recording band of a magnetic recording medium) in which information is written disappears over time.
上記した欠陥発生トラック数を測定する為に、各磁気記
録媒体ｉｔ、 １６及び１７を温度８０℃、湿度８０％
の高温多湿の雰囲気中に所定期間放置した。その後、情
報を書ぎ込んだ全トラック数のうち６００本のトラック
を選択し、そのトラックにおいて情報信号の消失したト
ラック数（欠陥トラック数）を、測定装置（例ニアデル
ファイ社 メディアサーティフフイヤＲＤＯ０８Ｇ）を
用い測定した。表３において、放置期間と欠陥トラック
数との関係を示す。In order to measure the number of defective tracks described above, each magnetic recording medium IT, 16 and 17 was heated at a temperature of 80°C and a humidity of 80%.
It was left in a high temperature and humid atmosphere for a specified period of time. After that, 600 tracks out of the total number of tracks in which information has been written are selected, and the number of tracks in which information signals have disappeared (number of defective tracks) is measured using a measuring device (e.g., Near Delphi Media Certifier RDO08G). ). Table 3 shows the relationship between the neglect period and the number of defective tracks.
表３
表３に示したように、本実施例（第１及び第２実施例）
によって製造した磁気記録媒体１１及び１６は、上記し
た高温多湿の雰囲気中に長期間放置しても、欠陥トラッ
クが発生ずることはなかった。Table 3 As shown in Table 3, this example (first and second examples)
The magnetic recording media 11 and 16 manufactured by the above did not develop defective tracks even when left in the above-mentioned high temperature and high humidity atmosphere for a long period of time.
一方、比較例として製造した磁気記録媒体１７は、上記
雰囲気中に放置する期間が長（なる程、欠陥トラック数
が著しく増加してしまう。このように磁気記録媒体１１
及び１６において欠陥トラックの発生が防止されている
のは、該媒体１１の中間層９及び保；［１０，該媒体１
６の中間層１４及び保護層１５が磁性ｗ１８及び１３を
それぞれ有効に保護し、磁気記録媒体１１及び１６に高
い耐候性を有せしめているからである。On the other hand, the magnetic recording medium 17 manufactured as a comparative example was left in the above atmosphere for a long period of time (the number of defective tracks increased significantly.
and 16, the occurrence of defective tracks is prevented by the intermediate layer 9 and the protective layer of the medium 11; [10, the medium 1
This is because the intermediate layer 14 and protective layer 15 of No. 6 effectively protect the magnetic w18 and w13, respectively, and provide the magnetic recording media 11 and 16 with high weather resistance.
次に、各磁気記録媒体１１及び１６の各保護層１０及び
１５上に、酸化アルミニウムと炭化チタンの混合焼結体
からなる磁気ヘッドスライダ−を荷重１０ｇで当接し、
初期の静止Ｆ１！擦係数をそれぞれ測定した。なお、前
記した初期の静止摩擦係数とは、８保ｌ！′ｉ１０及び
１５上に磁気ヘッドスライダ−を当接して最初に測定し
た静止摩擦係数である。このとき、各磁気記録媒体１１
及び１６における初期静止摩擦係数はいずれも０．２で
あった。Next, a magnetic head slider made of a mixed sintered body of aluminum oxide and titanium carbide is brought into contact with a load of 10 g on each protective layer 10 and 15 of each magnetic recording medium 11 and 16,
Early static F1! The friction coefficient was measured for each. In addition, the initial coefficient of static friction mentioned above is 8H! This is the coefficient of static friction that was first measured by bringing the magnetic head slider into contact with i10 and i15. At this time, each magnetic recording medium 11
The initial static friction coefficients for both samples and No. 16 were 0.2.
次に、各磁気記録媒体１１及び１６の各保護層１０及び
１５上に前記磁気ヘッドスライダ−を静止させた状態で
、各磁気記録媒体１１及び１６の回転開始・回転停止を
行うコンタクトスタート／ストップ（以下、ｒｃｓｓＪ
という。）をそれぞれ１万回繰り返した後に、前記した
と同様にして静止摩擦係数をそれぞれ測定すると、その
値は磁気記録媒体１１及び１６共に０．５であった。Next, with the magnetic head slider stationary on each protective layer 10 and 15 of each magnetic recording medium 11 and 16, contact start/stop is performed to start and stop rotation of each magnetic recording medium 11 and 16. (Hereinafter, rcssJ
That's what it means. ) was repeated 10,000 times, and the coefficient of static friction was measured in the same manner as described above, and the value was 0.5 for both magnetic recording media 11 and 16.
以上のように、磁気記録媒体１１及び１６における初期
静止摩擦係数及び１万回Ｃ８Ｓ後の静止摩擦係数の値は
共に、実用に耐えうる充分に低い値であった。As described above, both the initial static friction coefficient and the static friction coefficient after 10,000 cycles of C8S in the magnetic recording media 11 and 16 were sufficiently low values to withstand practical use.
また、磁気記録媒体１１及び１６において、それぞれ１
万回以上Ｃ８Ｓを繰り返しても非磁性支持体６の主表面
上に積層した薄膜（例えば、保ＩＦ）１０及び１５）に
傷等が発生せず、磁気記録媒体１１及び１６は充分な耐
久性を有していることが確認された。Moreover, in the magnetic recording media 11 and 16, 1
Even after repeating C8S more than 10,000 times, no scratches occur on the thin films (e.g., retention IF) 10 and 15) laminated on the main surface of the non-magnetic support 6, and the magnetic recording media 11 and 16 have sufficient durability. It was confirmed that it has.
以上のように、本実施例によって製造した磁気記録媒体
１１及び１６は、温度及び湿度条件に充分な耐性、すな
わち高い耐候性を有し、書き込まれた情報（情報信号）
を長期間確実に保持することができる。また、磁気記録
媒体１１及び１６における初期静止摩擦係数及び多数回
のＣ８Ｓ後の静止ＦＪ擦係数は、十分に低い値であり、
さらに、磁気記録媒体１１及び１６は充分な耐久性を有
している。さらに、同一の装置内で、下地層、磁性層、
中間層及び保１Ｂを順次積層することができるので、非
磁性支持体６等に塵埃が付着することを防止し、かつ容
易に磁気記録媒体１１及び１６を製造することができる
。As described above, the magnetic recording media 11 and 16 manufactured according to the present example have sufficient resistance to temperature and humidity conditions, that is, high weather resistance, and are capable of absorbing written information (information signals).
can be reliably maintained for a long period of time. In addition, the initial static friction coefficient and the static FJ friction coefficient after a large number of C8S in the magnetic recording media 11 and 16 are sufficiently low values,
Furthermore, the magnetic recording media 11 and 16 have sufficient durability. Furthermore, in the same device, an underlayer, a magnetic layer,
Since the intermediate layer and the retainer 1B can be sequentially laminated, it is possible to prevent dust from adhering to the nonmagnetic support 6 and the like, and to easily manufacture the magnetic recording media 11 and 16.
本発明は、上記した実施例に限定されるものではない。The present invention is not limited to the embodiments described above.
保護層の成膜時に用いる反応ガスとして、保護層１０の
成膜時にエタンを、保護層１５の成膜時にメタンをそれ
ぞれ用いてもよく、さらにメタン及びエタン以外に、メ
ヂレン、エチレン、アセチレン。As the reactive gas used when forming the protective layer, ethane may be used when forming the protective layer 10, and methane may be used when forming the protective layer 15. In addition to methane and ethane, medilene, ethylene, and acetylene may be used.
アセトン等の炭化水素を含有してなるガスを用いてもよ
い。さらに、炭化水素と水糸とを含有してなるガスを反
応ガスとして用いてもよい。また、高周波グロー放電法
による保護層の成膜時の高周波電力、その周波数、ガス
流量、処理室内圧力は適宜選定してよい。A gas containing a hydrocarbon such as acetone may also be used. Furthermore, a gas containing hydrocarbon and water string may be used as the reaction gas. Furthermore, the high frequency power, its frequency, gas flow rate, and processing chamber pressure during the formation of the protective layer by the high frequency glow discharge method may be selected as appropriate.
また、中間層９はタングステン、中間層１４はモリブデ
ンからそれぞれなったが、中間層９及び１４はタングス
テンとモリブデンとを含有してなってもよい。Further, although the intermediate layer 9 is made of tungsten and the intermediate layer 14 is made of molybdenum, the intermediate layers 9 and 14 may also be made of tungsten and molybdenum.
下地層、磁性層及び中間層の成膜時に用い・たアルゴン
ガスの代わりに、ネオンやキセノン等の不活性ガスを用
いてもよく、また、それらの成膜時のガス流量、処理雫
内圧力、ＤＣ電力密度は適宜選定してよい。Instead of the argon gas used when forming the underlayer, magnetic layer, and intermediate layer, an inert gas such as neon or xenon may be used, and the gas flow rate and pressure inside the processing droplet during film formation may be changed. , the DC power density may be selected as appropriate.
下地層及び磁性層はスパッタリング法以外に、具空蒸着
法やＣＶＤ法やイオンブレーティング法等の成膜方法に
よって形成してもよい。The underlayer and the magnetic layer may be formed by a film forming method such as a vacuum evaporation method, a CVD method, or an ion blasting method other than the sputtering method.
下地層はクロム以外に、チタン、タンタル及びモリブデ
ン等の非磁性材料からなるようにしてもよく、また下地
層は省略してもよい。また、磁性層はコバルトとニッケ
ルとクロムとからなるもの以外に、コバルト、コバルト
とニッケル、コバルトとプラチナ、コバルトとニッケル
と鉄、及び酸化鉄等の任意の磁性材料からなるようにし
てもよい。さらに、下地層、磁性層、中間層及び保護層
の膜厚はそれぞれ適宜選定しうるが、？３密度記録を行
うためには中間層の膜厚は５０〜２００人、保設層の膜
厚は５０〜４００人であることが望ましい。In addition to chromium, the underlayer may be made of a nonmagnetic material such as titanium, tantalum, or molybdenum, or the underlayer may be omitted. Further, the magnetic layer may be made of any magnetic material other than cobalt, nickel, and chromium, such as cobalt, cobalt and nickel, cobalt and platinum, cobalt, nickel, and iron, or iron oxide. Furthermore, the thicknesses of the underlayer, magnetic layer, intermediate layer, and protective layer can be selected as appropriate, but? In order to perform three-density recording, it is desirable that the intermediate layer has a thickness of 50 to 200 layers, and the storage layer has a thickness of 50 to 400 layers.
非磁性支持体はソーダライムガラス以外に、アルミノシ
リケートガラス、石英ガラス、アルミニウム、ポリエス
テル等の非磁性材料からなってよく、また、その形状は
ドーナッツ板状以外に、カード状、テープ状、ドラム状
等の任意の形状であってよい。In addition to soda lime glass, the nonmagnetic support may be made of nonmagnetic materials such as aluminosilicate glass, quartz glass, aluminum, and polyester, and its shape may be card, tape, or drum shape in addition to donut plate shape. It may have any shape such as.
本発明の磁気記録媒体の製造方法によれば、高い耐候性
を有し、書ぎ込まれた情報を長期聞保持することができ
る磁気記録媒体を製造することができる。According to the method for manufacturing a magnetic recording medium of the present invention, it is possible to manufacture a magnetic recording medium that has high weather resistance and can retain written information for a long period of time.
第１図及び第２図は本発明の実施例によって製造した磁
気記録媒体を示す部分断面図、第３図は比較例として製
造した磁気記録媒体を示す部分断面図、及び第４図は従
来の磁気記録媒体を示す部分断面図である。
６・・・非磁性支持体、７，１２・・・下地層、８．１
３・・・磁性層、９．１４・・・中間層、１０．１５・
・・保護層、１１゜１６・・・磁気記録媒体。1 and 2 are partial cross-sectional views showing a magnetic recording medium manufactured according to an example of the present invention, FIG. 3 is a partial cross-sectional view showing a magnetic recording medium manufactured as a comparative example, and FIG. 4 is a partial cross-sectional view showing a magnetic recording medium manufactured as a comparative example. FIG. 2 is a partial cross-sectional view showing a magnetic recording medium. 6...Nonmagnetic support, 7,12...Underlayer, 8.1
3... Magnetic layer, 9.14... Intermediate layer, 10.15.
...Protective layer, 11°16...Magnetic recording medium.
Claims (1)
と、スパッタリング法によりタングステン及びモリブデ
ンのうち少なくとも一つを含有してなる中間層を前記磁
性層上に被着する工程と、高周波グロー放電法により炭
素を含有してなる保護層を前記中間層上に被着する工程
とを有していることを特徴とする磁気記録媒体の製造方
法。(1) A step of depositing a magnetic layer on the main surface of a non-magnetic support; and a step of depositing an intermediate layer containing at least one of tungsten and molybdenum on the magnetic layer by sputtering. A method for producing a magnetic recording medium, comprising the steps of: depositing a protective layer containing carbon on the intermediate layer by a high frequency glow discharge method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62136069A JPH0690790B2 (en) | 1987-05-29 | 1987-05-29 | Method of manufacturing magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62136069A JPH0690790B2 (en) | 1987-05-29 | 1987-05-29 | Method of manufacturing magnetic recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63300427A true JPS63300427A (en) | 1988-12-07 |
| JPH0690790B2 JPH0690790B2 (en) | 1994-11-14 |
Family
ID=15166491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62136069A Expired - Fee Related JPH0690790B2 (en) | 1987-05-29 | 1987-05-29 | Method of manufacturing magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0690790B2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6029936A (en) * | 1983-07-29 | 1985-02-15 | Denki Kagaku Kogyo Kk | Magnetic recording medium and its production |
| JPS6154036A (en) * | 1984-08-24 | 1986-03-18 | Nec Corp | Magnetic recording medium and its manufacture |
| JPS61117727A (en) * | 1984-11-13 | 1986-06-05 | Nec Corp | Magnetic storage body and its manufacture |
-
1987
- 1987-05-29 JP JP62136069A patent/JPH0690790B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6029936A (en) * | 1983-07-29 | 1985-02-15 | Denki Kagaku Kogyo Kk | Magnetic recording medium and its production |
| JPS6154036A (en) * | 1984-08-24 | 1986-03-18 | Nec Corp | Magnetic recording medium and its manufacture |
| JPS61117727A (en) * | 1984-11-13 | 1986-06-05 | Nec Corp | Magnetic storage body and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0690790B2 (en) | 1994-11-14 |
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