JPS6328995B2 - - Google Patents

Info

Publication number
JPS6328995B2
JPS6328995B2 JP55073689A JP7368980A JPS6328995B2 JP S6328995 B2 JPS6328995 B2 JP S6328995B2 JP 55073689 A JP55073689 A JP 55073689A JP 7368980 A JP7368980 A JP 7368980A JP S6328995 B2 JPS6328995 B2 JP S6328995B2
Authority
JP
Japan
Prior art keywords
etching
gas
silicon oxide
silicon
selectively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55073689A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56169776A (en
Inventor
Isamu Hijikata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP7368980A priority Critical patent/JPS56169776A/ja
Publication of JPS56169776A publication Critical patent/JPS56169776A/ja
Publication of JPS6328995B2 publication Critical patent/JPS6328995B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP7368980A 1980-06-03 1980-06-03 Selective dry etching method Granted JPS56169776A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7368980A JPS56169776A (en) 1980-06-03 1980-06-03 Selective dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7368980A JPS56169776A (en) 1980-06-03 1980-06-03 Selective dry etching method

Publications (2)

Publication Number Publication Date
JPS56169776A JPS56169776A (en) 1981-12-26
JPS6328995B2 true JPS6328995B2 (enrdf_load_stackoverflow) 1988-06-10

Family

ID=13525425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7368980A Granted JPS56169776A (en) 1980-06-03 1980-06-03 Selective dry etching method

Country Status (1)

Country Link
JP (1) JPS56169776A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748235A (en) * 1980-07-24 1982-03-19 Fujitsu Ltd Manufacture of semiconductor device
US4585517A (en) * 1985-01-31 1986-04-29 Motorola, Inc. Reactive sputter cleaning of semiconductor wafer
US5234537A (en) * 1991-03-22 1993-08-10 Shimadzu Corporation Dry etching method and its application
US5282925A (en) * 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
EP1099776A1 (en) * 1999-11-09 2001-05-16 Applied Materials, Inc. Plasma cleaning step in a salicide process

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595327A (en) * 1979-01-16 1980-07-19 Hitachi Ltd Reactive sputter-etching

Also Published As

Publication number Publication date
JPS56169776A (en) 1981-12-26

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