JPS6328614Y2 - - Google Patents
Info
- Publication number
- JPS6328614Y2 JPS6328614Y2 JP12540785U JP12540785U JPS6328614Y2 JP S6328614 Y2 JPS6328614 Y2 JP S6328614Y2 JP 12540785 U JP12540785 U JP 12540785U JP 12540785 U JP12540785 U JP 12540785U JP S6328614 Y2 JPS6328614 Y2 JP S6328614Y2
- Authority
- JP
- Japan
- Prior art keywords
- famos
- writing
- output
- trimming
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 claims description 68
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 230000001419 dependent effect Effects 0.000 claims 1
- 238000009966 trimming Methods 0.000 description 25
- 238000012544 monitoring process Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000001514 detection method Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 241001191009 Gymnomyza Species 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- HLXGRHNZZSMNRX-UHFFFAOYSA-M sodium;3-(n-ethyl-3,5-dimethylanilino)-2-hydroxypropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC(C)=CC(C)=C1 HLXGRHNZZSMNRX-UHFFFAOYSA-M 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Electric Clocks (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12540785U JPS6328614Y2 (cs) | 1985-08-15 | 1985-08-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12540785U JPS6328614Y2 (cs) | 1985-08-15 | 1985-08-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6163851U JPS6163851U (cs) | 1986-04-30 |
| JPS6328614Y2 true JPS6328614Y2 (cs) | 1988-08-02 |
Family
ID=30684100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12540785U Expired JPS6328614Y2 (cs) | 1985-08-15 | 1985-08-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6328614Y2 (cs) |
-
1985
- 1985-08-15 JP JP12540785U patent/JPS6328614Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6163851U (cs) | 1986-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4628487A (en) | Dual slope, feedback controlled, EEPROM programming | |
| JP2860308B2 (ja) | Ｍｏｓ集積回路の閾値を調整する方法 | |
| US4703196A (en) | High voltage precharging circuit | |
| US4799195A (en) | Semiconductor memory device with a sense amplifier | |
| US5184031A (en) | Semiconductor integrated circuit | |
| USRE34974E (en) | Non-volatile memory circuit | |
| US20220294426A1 (en) | Ultra-low energy per cycle oscillator topology | |
| JPS60176121A (ja) | 電圧降下回路 | |
| US6266276B1 (en) | Non-volatile semiconductor memory device and internal operation method for said non-volatile semiconductor memory device | |
| KR940004408B1 (ko) | 반도체 메모리 장치의 자동 스트레스 모드 테스트장치 | |
| US6922084B2 (en) | Ultra-low power programmable timer and low voltage detection circuits | |
| US6392394B1 (en) | Step-down circuit for reducing an external supply voltage | |
| WO2004064115A9 (en) | Differential dual floating gate circuit and method for programming | |
| US7158412B2 (en) | On-chip EE-PROM programming waveform generation | |
| EP0155117B1 (en) | Voltage detecting device | |
| JPS6328614Y2 (cs) | ||
| US7151419B2 (en) | Oscillation-stop detection circuit, oscillation-stop detection system, electronic device, and oscillation-stop detection method | |
| JPS6015897B2 (ja) | 電池式電子時計 | |
| JP3444286B2 (ja) | スイッチの開閉状態検出装置および電子機器 | |
| US6621737B2 (en) | Circuit and associated method for the erasure or programming of a memory cell | |
| EP1588374B1 (en) | Floating gate analog voltage feedback circuit | |
| JPS584848B2 (ja) | Ａ／ｄ変換回路 | |
| Gerber et al. | Low-voltage single supply CMOS electrically erasable read-only memory | |
| JPH02276467A (ja) | 昇圧回路 | |
| JPS5925391B2 (ja) | 半導体集積回路 |