JPS6328502B2 - - Google Patents

Info

Publication number
JPS6328502B2
JPS6328502B2 JP16938581A JP16938581A JPS6328502B2 JP S6328502 B2 JPS6328502 B2 JP S6328502B2 JP 16938581 A JP16938581 A JP 16938581A JP 16938581 A JP16938581 A JP 16938581A JP S6328502 B2 JPS6328502 B2 JP S6328502B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
electromagnetic radiation
wide bandgap
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16938581A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57103372A (en
Inventor
Fuedoroitsuchi Purotonikofu Anatorii
Mihairoitsuchi Hohofu Yurii
Arekusandoroitsuchi Torokonnikofu Uradeimiiru
Emanyuiroitsuchi Shubin Uitarii
Iwanoitsuchi Mironofu Nikorai
Uikutoroitsuchi Uradeimiiru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FUIJICHESUKII INST IMENI PII ENU REBEDEUA AN SSSR
Original Assignee
FUIJICHESUKII INST IMENI PII ENU REBEDEUA AN SSSR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FUIJICHESUKII INST IMENI PII ENU REBEDEUA AN SSSR filed Critical FUIJICHESUKII INST IMENI PII ENU REBEDEUA AN SSSR
Publication of JPS57103372A publication Critical patent/JPS57103372A/ja
Publication of JPS6328502B2 publication Critical patent/JPS6328502B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Measurement Of Radiation (AREA)
JP16938581A 1980-10-23 1981-10-22 Device for converting electromagnetic radiation into electric signal Granted JPS57103372A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU802995104A SU915683A1 (ru) 1980-10-23 1980-10-23 ПРЕОБРАЗОВАТЕЛЬ ОПТИЧЕСКОГО ИЗЛУЧЕНИЯ в электрический сигнал на основе структуры

Publications (2)

Publication Number Publication Date
JPS57103372A JPS57103372A (en) 1982-06-26
JPS6328502B2 true JPS6328502B2 (enrdf_load_stackoverflow) 1988-06-08

Family

ID=20922673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16938581A Granted JPS57103372A (en) 1980-10-23 1981-10-22 Device for converting electromagnetic radiation into electric signal

Country Status (6)

Country Link
JP (1) JPS57103372A (enrdf_load_stackoverflow)
DE (1) DE3141956A1 (enrdf_load_stackoverflow)
FR (1) FR2493046B1 (enrdf_load_stackoverflow)
GB (1) GB2087645B (enrdf_load_stackoverflow)
IT (1) IT1168456B (enrdf_load_stackoverflow)
SU (1) SU915683A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115A (ja) * 1982-06-25 1984-01-05 Nippon Telegr & Teleph Corp <Ntt> 光フアイバの融着接続方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1044494A (en) * 1965-04-07 1966-09-28 Mullard Ltd Improvements in and relating to semiconductor devices
SE331864B (enrdf_load_stackoverflow) * 1969-05-30 1971-01-18 Inst Halvledarforskning Ab
FR2137184B1 (enrdf_load_stackoverflow) * 1971-05-14 1976-03-19 Commissariat Energie Atomique
US4016586A (en) * 1974-03-27 1977-04-05 Innotech Corporation Photovoltaic heterojunction device employing a wide bandgap material as an active layer
JPS6047752B2 (ja) * 1975-08-20 1985-10-23 松下電器産業株式会社 擦像管タ−ゲット
GB1553684A (en) * 1976-08-20 1979-09-26 Matsushita Electric Ind Co Ltd Photoconductive devices
US4176275A (en) * 1977-08-22 1979-11-27 Minnesota Mining And Manufacturing Company Radiation imaging and readout system and method utilizing a multi-layered device having a photoconductive insulative layer

Also Published As

Publication number Publication date
DE3141956A1 (de) 1982-06-16
FR2493046A1 (fr) 1982-04-30
IT1168456B (it) 1987-05-20
DE3141956C2 (enrdf_load_stackoverflow) 1989-09-07
IT8141672A0 (it) 1981-10-22
GB2087645A (en) 1982-05-26
SU915683A1 (ru) 1985-10-23
GB2087645B (en) 1984-12-05
FR2493046B1 (fr) 1985-11-15
IT8141672A1 (it) 1983-04-22
JPS57103372A (en) 1982-06-26

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