JPS57103372A - Device for converting electromagnetic radiation into electric signal - Google Patents
Device for converting electromagnetic radiation into electric signalInfo
- Publication number
- JPS57103372A JPS57103372A JP16938581A JP16938581A JPS57103372A JP S57103372 A JPS57103372 A JP S57103372A JP 16938581 A JP16938581 A JP 16938581A JP 16938581 A JP16938581 A JP 16938581A JP S57103372 A JPS57103372 A JP S57103372A
- Authority
- JP
- Japan
- Prior art keywords
- electric signal
- electromagnetic radiation
- converting electromagnetic
- converting
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU802995104A SU915683A1 (ru) | 1980-10-23 | 1980-10-23 | ПРЕОБРАЗОВАТЕЛЬ ОПТИЧЕСКОГО ИЗЛУЧЕНИЯ в электрический сигнал на основе структуры |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57103372A true JPS57103372A (en) | 1982-06-26 |
| JPS6328502B2 JPS6328502B2 (enrdf_load_stackoverflow) | 1988-06-08 |
Family
ID=20922673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16938581A Granted JPS57103372A (en) | 1980-10-23 | 1981-10-22 | Device for converting electromagnetic radiation into electric signal |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS57103372A (enrdf_load_stackoverflow) |
| DE (1) | DE3141956A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2493046B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2087645B (enrdf_load_stackoverflow) |
| IT (1) | IT1168456B (enrdf_load_stackoverflow) |
| SU (1) | SU915683A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59115A (ja) * | 1982-06-25 | 1984-01-05 | Nippon Telegr & Teleph Corp <Ntt> | 光フアイバの融着接続方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1044494A (en) * | 1965-04-07 | 1966-09-28 | Mullard Ltd | Improvements in and relating to semiconductor devices |
| SE331864B (enrdf_load_stackoverflow) * | 1969-05-30 | 1971-01-18 | Inst Halvledarforskning Ab | |
| FR2137184B1 (enrdf_load_stackoverflow) * | 1971-05-14 | 1976-03-19 | Commissariat Energie Atomique | |
| US4016586A (en) * | 1974-03-27 | 1977-04-05 | Innotech Corporation | Photovoltaic heterojunction device employing a wide bandgap material as an active layer |
| JPS6047752B2 (ja) * | 1975-08-20 | 1985-10-23 | 松下電器産業株式会社 | 擦像管タ−ゲット |
| GB1553684A (en) * | 1976-08-20 | 1979-09-26 | Matsushita Electric Ind Co Ltd | Photoconductive devices |
| US4176275A (en) * | 1977-08-22 | 1979-11-27 | Minnesota Mining And Manufacturing Company | Radiation imaging and readout system and method utilizing a multi-layered device having a photoconductive insulative layer |
-
1980
- 1980-10-23 SU SU802995104A patent/SU915683A1/ru active
-
1981
- 1981-10-14 GB GB8130947A patent/GB2087645B/en not_active Expired
- 1981-10-22 IT IT41672/81A patent/IT1168456B/it active
- 1981-10-22 JP JP16938581A patent/JPS57103372A/ja active Granted
- 1981-10-22 DE DE19813141956 patent/DE3141956A1/de active Granted
- 1981-10-23 FR FR8119988A patent/FR2493046B1/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59115A (ja) * | 1982-06-25 | 1984-01-05 | Nippon Telegr & Teleph Corp <Ntt> | 光フアイバの融着接続方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2493046B1 (fr) | 1985-11-15 |
| IT1168456B (it) | 1987-05-20 |
| DE3141956A1 (de) | 1982-06-16 |
| FR2493046A1 (fr) | 1982-04-30 |
| JPS6328502B2 (enrdf_load_stackoverflow) | 1988-06-08 |
| IT8141672A0 (it) | 1981-10-22 |
| DE3141956C2 (enrdf_load_stackoverflow) | 1989-09-07 |
| GB2087645B (en) | 1984-12-05 |
| GB2087645A (en) | 1982-05-26 |
| IT8141672A1 (it) | 1983-04-22 |
| SU915683A1 (ru) | 1985-10-23 |
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