GB2087645B - Device for converting electromagnetic radiation into electrical signal - Google Patents
Device for converting electromagnetic radiation into electrical signalInfo
- Publication number
- GB2087645B GB2087645B GB8130947A GB8130947A GB2087645B GB 2087645 B GB2087645 B GB 2087645B GB 8130947 A GB8130947 A GB 8130947A GB 8130947 A GB8130947 A GB 8130947A GB 2087645 B GB2087645 B GB 2087645B
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrical signal
- electromagnetic radiation
- converting electromagnetic
- converting
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005670 electromagnetic radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU802995104A SU915683A1 (ru) | 1980-10-23 | 1980-10-23 | ПРЕОБРАЗОВАТЕЛЬ ОПТИЧЕСКОГО ИЗЛУЧЕНИЯ в электрический сигнал на основе структуры |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2087645A GB2087645A (en) | 1982-05-26 |
GB2087645B true GB2087645B (en) | 1984-12-05 |
Family
ID=20922673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8130947A Expired GB2087645B (en) | 1980-10-23 | 1981-10-14 | Device for converting electromagnetic radiation into electrical signal |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS57103372A (enrdf_load_stackoverflow) |
DE (1) | DE3141956A1 (enrdf_load_stackoverflow) |
FR (1) | FR2493046B1 (enrdf_load_stackoverflow) |
GB (1) | GB2087645B (enrdf_load_stackoverflow) |
IT (1) | IT1168456B (enrdf_load_stackoverflow) |
SU (1) | SU915683A1 (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59115A (ja) * | 1982-06-25 | 1984-01-05 | Nippon Telegr & Teleph Corp <Ntt> | 光フアイバの融着接続方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1044494A (en) * | 1965-04-07 | 1966-09-28 | Mullard Ltd | Improvements in and relating to semiconductor devices |
SE331864B (enrdf_load_stackoverflow) * | 1969-05-30 | 1971-01-18 | Inst Halvledarforskning Ab | |
FR2137184B1 (enrdf_load_stackoverflow) * | 1971-05-14 | 1976-03-19 | Commissariat Energie Atomique | |
US4016586A (en) * | 1974-03-27 | 1977-04-05 | Innotech Corporation | Photovoltaic heterojunction device employing a wide bandgap material as an active layer |
JPS6047752B2 (ja) * | 1975-08-20 | 1985-10-23 | 松下電器産業株式会社 | 擦像管タ−ゲット |
GB1553684A (en) * | 1976-08-20 | 1979-09-26 | Matsushita Electric Ind Co Ltd | Photoconductive devices |
US4176275A (en) * | 1977-08-22 | 1979-11-27 | Minnesota Mining And Manufacturing Company | Radiation imaging and readout system and method utilizing a multi-layered device having a photoconductive insulative layer |
-
1980
- 1980-10-23 SU SU802995104A patent/SU915683A1/ru active
-
1981
- 1981-10-14 GB GB8130947A patent/GB2087645B/en not_active Expired
- 1981-10-22 IT IT41672/81A patent/IT1168456B/it active
- 1981-10-22 JP JP16938581A patent/JPS57103372A/ja active Granted
- 1981-10-22 DE DE19813141956 patent/DE3141956A1/de active Granted
- 1981-10-23 FR FR8119988A patent/FR2493046B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2493046B1 (fr) | 1985-11-15 |
IT1168456B (it) | 1987-05-20 |
DE3141956A1 (de) | 1982-06-16 |
FR2493046A1 (fr) | 1982-04-30 |
JPS6328502B2 (enrdf_load_stackoverflow) | 1988-06-08 |
IT8141672A0 (it) | 1981-10-22 |
DE3141956C2 (enrdf_load_stackoverflow) | 1989-09-07 |
JPS57103372A (en) | 1982-06-26 |
GB2087645A (en) | 1982-05-26 |
IT8141672A1 (it) | 1983-04-22 |
SU915683A1 (ru) | 1985-10-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |