JPS63282163A - Production of high-toughness silicon nitride ceramics - Google Patents
Production of high-toughness silicon nitride ceramicsInfo
- Publication number
- JPS63282163A JPS63282163A JP62113606A JP11360687A JPS63282163A JP S63282163 A JPS63282163 A JP S63282163A JP 62113606 A JP62113606 A JP 62113606A JP 11360687 A JP11360687 A JP 11360687A JP S63282163 A JPS63282163 A JP S63282163A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- mixture
- toughness
- whiskers
- molding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 28
- 239000000919 ceramic Substances 0.000 title claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000203 mixture Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000005121 nitriding Methods 0.000 claims abstract description 8
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 7
- 238000000465 moulding Methods 0.000 claims abstract description 5
- 238000010304 firing Methods 0.000 claims description 8
- 238000005245 sintering Methods 0.000 abstract description 6
- 239000011230 binding agent Substances 0.000 abstract description 3
- 239000012299 nitrogen atmosphere Substances 0.000 abstract description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052596 spinel Inorganic materials 0.000 abstract description 2
- 239000011029 spinel Substances 0.000 abstract description 2
- 238000001354 calcination Methods 0.000 abstract 2
- 239000002994 raw material Substances 0.000 abstract 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000005238 degreasing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000013001 point bending Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 238000007545 Vickers hardness test Methods 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概 要〕
窒化ケイ素ウィスカーを添加した金属ケイ素粉末成形体
を反応窒化した後本焼成することによって、高靭性の窒
化ケイ素質セラミックスが得られる。DETAILED DESCRIPTION OF THE INVENTION [Summary] A highly tough silicon nitride ceramic can be obtained by reactively nitriding a metal silicon powder compact to which silicon nitride whiskers have been added and then subjecting it to main firing.
本発明は高靭性窒化ケイ素質セラミックスの製、遣方法
に係る。The present invention relates to a method for manufacturing and using high toughness silicon nitride ceramics.
〔従来の技術と発明が解決しようとする問題点〕窒化ケ
イ素質セラミックスは、その高い高温強度、硬度、耐摩
耗性等の優れた特徴を持ち、新しい構造材料として期待
されている。しかし、セラミックスは本来脆性材料であ
るため、その強度は微少な欠陥に強く依存し、強度にば
らつきが生じ易いため、製品の信鎖性確保するのが難し
く、普及が遅れている。[Prior art and problems to be solved by the invention] Silicon nitride ceramics have excellent characteristics such as high high temperature strength, hardness, and wear resistance, and are expected to be used as new structural materials. However, since ceramics are inherently brittle materials, their strength strongly depends on minute defects, and their strength tends to vary, making it difficult to ensure product reliability, and their widespread use has been delayed.
窒化ケイ素質セラミックスの靭性を改善するためにウィ
スカー、特に炭化ケイ素ウィスカーを添加する方法が知
られているが、達成されている靭性はまだ十分ではなく
、さらに改良が望まれる。A method of adding whiskers, particularly silicon carbide whiskers, to improve the toughness of silicon nitride ceramics is known, but the achieved toughness is still not sufficient and further improvements are desired.
本発明は、上記問題点を解決するために、金属ケイ素粉
末に窒化ケイ素ウィスカーを添加した混合物を成形し、
これを反応窒化した後、本焼成することを特徴とする高
靭性窒化ケイ素質セラミックスの製造方法を提供する。In order to solve the above problems, the present invention molds a mixture of metal silicon powder and silicon nitride whiskers,
The present invention provides a method for producing high-toughness silicon nitride ceramics, which is characterized by carrying out reactive nitriding and then main firing.
出発原料は金属ケイ素粉末と窒化ケイ素ウィスカーに必
要に応じて酸化イツトリウム、酸化マグネシウム、スピ
ネル等の焼結助剤の混合物である。The starting material is a mixture of metallic silicon powder, silicon nitride whiskers, and optionally a sintering aid such as yttrium oxide, magnesium oxide, or spinel.
窒化ケイ素ウィスカーの添加量は一般的に5〜30重量
%、好ましくは10〜20重量%、焼結助剤の添加量は
一般的に2〜30重量%である。The amount of silicon nitride whiskers added is generally 5 to 30% by weight, preferably 10 to 20% by weight, and the amount of sintering aid added is generally 2 to 30% by weight.
上記出発原料に有機バインダーを加えてよく混合し、成
形し、脱脂した後、先ず窒素雰囲気下1300〜150
0℃で2時間程度焼成する。この焼成により金属ケイ素
が窒化して窒化ケイ素になるとともに焼結するが、この
とき生成する窒化ケイ素は窒化ケイ素同志のみならず窒
化ケイ素ウィスカーとも親密に濡れ、それが後に本焼成
して得られる焼成品の靭性を高める原因であると考えら
れる。After adding an organic binder to the above starting materials, mixing well, molding, and degreasing, first
Bake at 0°C for about 2 hours. Through this firing, metallic silicon is nitrided to become silicon nitride and sintered, but the silicon nitride produced at this time intimately wets not only the silicon nitride itself but also the silicon nitride whiskers. This is thought to be the cause of increasing the toughness of the product.
反応窒化の条件は金属ケイ素から窒化ケイ素焼結体を製
造する慣用の反応窒化と同様であることができる。The conditions for reactive nitriding can be similar to conventional reactive nitriding for producing silicon nitride sintered bodies from metallic silicon.
反応窒化後、1700〜1900℃の温度で3時間程度
本焼成する。これは窒化ケイ素質セラミックスの焼結を
進めて密度を高めるために行なうものである。この焼成
の条件は普通の窒化ケイ素の焼結のための条件と基本的
に同一であることができる。After reactive nitriding, main firing is performed at a temperature of 1700 to 1900° C. for about 3 hours. This is done to advance the sintering of the silicon nitride ceramic and increase its density. The firing conditions can be essentially the same as those for conventional silicon nitride sintering.
微細金属ケイ素粉末(平均粒径2μm)80gにイツト
リア粉10g1窒化ケイ素ウィスカー(平均長さ15μ
m1アスペクト比20)Logを加え、この混合物に有
機物バインダー8gを加えて2時間ボールミルを行なっ
た。得られた粉末を曲げ試験体用(40X 4 X 3
mm)に圧粉成形した。10 g of ittria powder 1 silicon nitride whisker (average length 15 μm) to 80 g of fine metal silicon powder (average particle size 2 μm)
m1 aspect ratio 20) Log was added, 8 g of an organic binder was added to the mixture, and ball milling was performed for 2 hours. The obtained powder was bent for test specimens (40×4×3
mm).
脱脂後、窒素雰囲気中で1400℃に昇温し、4時間保
持して反応窒化させた後さらに1800℃に昇温し、3
時間保持して本焼成を行なった。After degreasing, the temperature was raised to 1400°C in a nitrogen atmosphere, held for 4 hours to cause reaction nitridation, and then further heated to 1800°C for 3
Main firing was carried out by holding for a certain period of time.
得られた焼結体に対し、JJSR1601に従って3点
曲げ強さ及び、ビッカース圧痕法による破壊靭性値の測
定を行なった。The obtained sintered body was measured for three-point bending strength and fracture toughness by the Vickers indentation method in accordance with JJSR1601.
比較例として、窒化ケイ素粉末80gとイアトリア10
gと窒化ケイ素ウィスカー10gからなる混合物に対し
ても同様の手法で圧粉成形、脱脂後、窒素雰囲気下18
00℃、3時間の焼成を行なって焼結体を作製し、同様
に3点曲げ強さと破壊靭性値を測定した。As a comparative example, 80g of silicon nitride powder and Iatria 10
A mixture of g and 10 g of silicon nitride whiskers was compacted using the same method, degreased, and then heated in a nitrogen atmosphere for 18 g.
A sintered body was prepared by firing at 00°C for 3 hours, and the three-point bending strength and fracture toughness were similarly measured.
結果を下記表に示す。The results are shown in the table below.
表
〔発明の効果〕
本発明により、窒化ケイ素粉末に窒化ケイ素ウィスカー
を添加して焼結して得られるセラミックスと比べて、靭
性が向上した窒化ケイ素質セラミックスが得られる。Table [Effects of the Invention] According to the present invention, silicon nitride ceramics with improved toughness can be obtained compared to ceramics obtained by adding silicon nitride whiskers to silicon nitride powder and sintering the mixture.
Claims (1)
混合物を成形し、これを反応窒化した後、本焼成するこ
とを特徴とする高靭性窒化ケイ素質セラミックスの製造
方法。1. A method for producing high-toughness silicon nitride ceramics, which comprises molding a mixture of metallic silicon powder and adding silicon nitride whiskers, reacting and nitriding the mixture, and then firing the mixture.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62113606A JPS63282163A (en) | 1987-05-12 | 1987-05-12 | Production of high-toughness silicon nitride ceramics |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62113606A JPS63282163A (en) | 1987-05-12 | 1987-05-12 | Production of high-toughness silicon nitride ceramics |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63282163A true JPS63282163A (en) | 1988-11-18 |
Family
ID=14616477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62113606A Pending JPS63282163A (en) | 1987-05-12 | 1987-05-12 | Production of high-toughness silicon nitride ceramics |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63282163A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112745137A (en) * | 2021-01-08 | 2021-05-04 | 武汉科技大学 | Silicon nitride whisker reinforced magnesia-alumina spinel breathable refractory material and preparation method thereof |
CN113480318A (en) * | 2021-08-18 | 2021-10-08 | 河南北星精工技术有限公司 | High-thermal-conductivity silicon nitride ceramic and preparation method thereof |
-
1987
- 1987-05-12 JP JP62113606A patent/JPS63282163A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112745137A (en) * | 2021-01-08 | 2021-05-04 | 武汉科技大学 | Silicon nitride whisker reinforced magnesia-alumina spinel breathable refractory material and preparation method thereof |
CN113480318A (en) * | 2021-08-18 | 2021-10-08 | 河南北星精工技术有限公司 | High-thermal-conductivity silicon nitride ceramic and preparation method thereof |
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