JPS63270454A - Method for metallizing of aluminum nitride substrate - Google Patents
Method for metallizing of aluminum nitride substrateInfo
- Publication number
- JPS63270454A JPS63270454A JP10143087A JP10143087A JPS63270454A JP S63270454 A JPS63270454 A JP S63270454A JP 10143087 A JP10143087 A JP 10143087A JP 10143087 A JP10143087 A JP 10143087A JP S63270454 A JPS63270454 A JP S63270454A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- nitride substrate
- sputtering
- titanium
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 23
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000010936 titanium Substances 0.000 claims abstract description 17
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000004544 sputter deposition Methods 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000001465 metallisation Methods 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052802 copper Inorganic materials 0.000 abstract description 16
- 239000010949 copper Substances 0.000 abstract description 16
- 238000004506 ultrasonic cleaning Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 4
- 239000010409 thin film Substances 0.000 abstract 3
- 239000011159 matrix material Substances 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 235000013405 beer Nutrition 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910000976 Electrical steel Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
- H05K3/146—By vapour deposition
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、窒化アルミニウム基板の金属化法に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a method for metallizing aluminum nitride substrates.
（従来の技術）
セラミック基板の表面を金属化して導体回路を形成した
回路基板は、以前からＩＣチップ搭載可能なモジュール
基板として広（用いられおり、このセラミ、り基板とし
ては現在一般にアルミナ基板が使用されている。(Prior art) Circuit boards, which are made by metallizing the surface of a ceramic substrate and forming conductor circuits, have been widely used as module boards on which IC chips can be mounted.Currently, alumina substrates are generally used as ceramic substrates. It is used.
近年、ＩＣの高集積化に伴なってＩＣチップの大型化や
発熱量増大の傾向は顕著となっている。In recent years, as ICs have become more highly integrated, there has been a remarkable tendency for IC chips to become larger and generate more heat.
このためアルミナ基板では、ＩＣチップとの熱膨張系数
の整合性や、放熱性の面で対応しきれなくなってきてい
る。For this reason, alumina substrates are no longer compatible with IC chips in terms of thermal expansion coefficient matching and heat dissipation.
そこで、この対策の一つとして、アルミナに比べて、Ｉ
Ｃチップとの熱膨張係数差が、１／２以下で、かつ熱伝
導率が１０倍以上の窒化アルミニウム基板の回路基板へ
の適用が検討されはじめている。Therefore, as one of the countermeasures, compared to alumina, I
Consideration has begun to be given to the application of aluminum nitride substrates, which have a thermal expansion coefficient difference of 1/2 or less and a thermal conductivity of 10 times or more compared to C chips, to circuit boards.
（発明が解決しようとする問題点）
ところが、アルミナはアルミニウムの酸化物であるのに
対して、窒化アルミニウムはアルミニウム窒化物である
ため、従来のアルミナに対する金属化法と同様な方法で
は、窒化アルミニウム基板に良好な密着性を持つ導電金
属層を形成することは出来ない。(Problem to be solved by the invention) However, while alumina is an oxide of aluminum, aluminum nitride is an aluminum nitride. It is not possible to form a conductive metal layer with good adhesion to the substrate.
本発明はζこの窒化アルミニウム基板に対して、密着性
のよい導電金属層を形成する方法を提供するものである
。The present invention provides a method for forming a conductive metal layer with good adhesion on this aluminum nitride substrate.
（問題点を解決するための手段）
本発明は、窒化アルミニウム基板に、チタン薄層をスパ
ッタリング法により形成し、更にその上に導電金属層を
形成することより成ると共に、少なくともチタン薄層を
スパッタリング法により形成した後に加熱処理を施すこ
とを特徴とするものである。(Means for Solving the Problems) The present invention comprises forming a thin titanium layer on an aluminum nitride substrate by sputtering, and further forming a conductive metal layer thereon, and at least sputtering the thin titanium layer. It is characterized in that it is formed by a method and then subjected to a heat treatment.
以下本発明を一実施例に基づき説明する。The present invention will be explained below based on one embodiment.
ｋｓｌ １００ 鶴、横１００鶴、厚さ０．６３５ｆｉ
＜７）窒化アルミニウム基板（ｅ山曹達ｎ製商品名、シ
ェイパル基板）の表面を、界面活性剤を含む水溶液中、
次に純水中、次にメタノール中、次にアセトン中で順に
各々１０分間超音波洗浄した。ksl 100 crane, width 100 crane, thickness 0.635fi
<7) The surface of an aluminum nitride substrate (trade name, Shapal substrate manufactured by e-sansoda-n) was soaked in an aqueous solution containing a surfactant.
Next, ultrasonic cleaning was performed in pure water, then in methanol, and then in acetone for 10 minutes each.
このようにして清浄化した基板を、スパッタリング装置
（日本真空技術社ＤＣプレーナマグネトロンスバフクリ
ング装置 ＭＬＨ−６３１５Ｄ）内で、１０−’〜１
０−’Ｔ ｏ ｒ ｒの真空中、２００〜２５０℃で約
２０分間加熱した２次に、アルゴンガスの流入によって
真空度を５Ｘ１０−”Ｔｏｒｒに調整した状態下、ＩＡ
、３５０ｖの印加条件で窒化アノ−ミニラム基板上にチ
タンをスパッタリングし、続いて３．５Ａ、４５０■の
印加条件で銅をスパッタリングして、チタン、銅の２重
構造のメタライズ層を形成した。チタン層、銅層の厚み
は共に０．０５μｍである。The thus cleaned substrate was sputtered in a sputtering apparatus (Japan Vacuum Engineering Co., Ltd. DC planar magnetron buffing apparatus MLH-6315D) for 10-' to 1.
After heating at 200 to 250°C for about 20 minutes in a vacuum of 0-' Torr, IA
, titanium was sputtered on the nitrided ano-minilum substrate under conditions of application of 350V, and then copper was sputtered under conditions of application of 3.5A and 450V to form a metallized layer with a double structure of titanium and copper. The thickness of both the titanium layer and the copper layer is 0.05 μm.
このようにしてメタライズした窒化アルミニウム基板を
大気中に取り出した後、電気銅めっき一しジスト形成−
銅のエツチング−チタンのエツチングによって回路パタ
ーンを形成した。After the aluminum nitride substrate metallized in this way is taken out into the atmosphere, it is electrolytically plated with copper to form a mist.
The circuit pattern was formed by copper etching-titanium etching.
次に、この回路基板を、一方の口から窒素ガスを流入さ
せ、他方の口から気体を自然放出させるタイプの窒素ガ
ス置換型オーブン中で、窒素ガス置換しながら、室温か
ら３５０℃まで昇温した後、約４０分間保持した。この
ような熱処理を施した回路基板について、密着力を調べ
たところ、１．５ｋｇ ｒ ／ ｃｓのビール強度を示
した。なお、ビール強度は、ＪＩＳ Ｃ６４８１５，７
に準拠して測定した。Next, this circuit board is heated from room temperature to 350 degrees Celsius while being replaced with nitrogen gas in a nitrogen gas purging oven that allows nitrogen gas to flow in from one port and naturally releases gas from the other port. After that, it was held for about 40 minutes. When the adhesion of the heat-treated circuit board was examined, it showed a beer strength of 1.5 kg r/cs. In addition, beer strength is JIS C64815, 7
Measured according to.
比較のために、チタンスパッタリングの工程のみを除い
た前記と同様の工程で、窒化アルミニウム基板上にメタ
ライズ層を形成した場合、熱処理前のビール強度は、０
．０５ｋｇｒ／ａｓで、熱処理後は、メタライズ層に、
１〜２誼φ程度のふくれが無数に発生し、ビール強度は
０．０２ｂｆ／ｃｓに低下した。For comparison, when a metallized layer was formed on an aluminum nitride substrate using the same process as above except for the titanium sputtering process, the beer strength before heat treatment was 0.
．． After heat treatment at 05 kgr/as, the metallized layer has
Numerous blisters of about 1 to 2 mm diameter occurred, and the beer strength decreased to 0.02 bf/cs.
以上の例では、スパッタリング法で形成されたチタン薄
層上に導電金属層を形成する方法として、スバ・７タリ
ング法で形成されたチタン薄層上に、銅をスパッタリン
グして電気銅めっきを行う場合を示したが、銅のスパッ
タリングに代えて、ニッケル、鉛、鉄、コバルト、アル
ミニウム、錫、パラジウム、モリブデン、タングステン
、金、銀、白金等の金属のスパッタリング、真空蒸着、
及び電気銅めっきに代えて無電解銅めっき等により導電
金属層を形成することが出来る。In the above example, as a method for forming a conductive metal layer on a thin titanium layer formed by a sputtering method, electrolytic copper plating is performed by sputtering copper on a thin titanium layer formed by a sputtering method. However, instead of sputtering copper, sputtering, vacuum deposition, etc. of metals such as nickel, lead, iron, cobalt, aluminum, tin, palladium, molybdenum, tungsten, gold, silver, platinum, etc.
Also, the conductive metal layer can be formed by electroless copper plating or the like instead of electrolytic copper plating.
また、スパッタリング法で形成されたチタン薄層上に銅
の置換めっきを行い、電気銅めっき、無電解銅めっき等
を行い導電金属層を形成することも出来る。Alternatively, a conductive metal layer can be formed by performing copper displacement plating on the titanium thin layer formed by sputtering, and then performing electrolytic copper plating, electroless copper plating, or the like.
更に、上記の方法に於いて、電気鋼めっき、無電解銅め
っき等を省略して、スパッタリング、真空蒸着等のみで
導電金属層を形成することも出来る。Furthermore, in the above method, it is also possible to omit electrical steel plating, electroless copper plating, etc., and form the conductive metal layer only by sputtering, vacuum deposition, etc.
本発明においては、加熱処理は、少なくともチタン薄層
をスパッタリング法により形成した後に施せばよく、チ
タン薄層上に導電金属層を形成する前に加熱処理を施し
ても良い。In the present invention, the heat treatment may be performed at least after forming the titanium thin layer by sputtering, or may be performed before forming the conductive metal layer on the titanium thin layer.
本発明の方法は、ベアチップ搭載用回路基板、特にクリ
ンプチップ搭載用回路基板の製造に好適に用いられる。The method of the present invention is suitably used for producing a bare chip mounting circuit board, particularly a crimp chip mounting circuit board.
（発明の効果） 本発明により、窒化アルミニウム基板に密着性゛、二ノ(Effect of the invention) The present invention provides excellent adhesion to aluminum nitride substrates.
Claims (1)
ング法により形成し、更にその上に導電金属層を形成す
ることより成ると共に、少なくともチタン薄層をスパッ
タリング法により形成した後に加熱処理を施すことを特
徴とする窒化アルミニウム基板の金属化法。1. It consists of forming a thin titanium layer on an aluminum nitride substrate by sputtering, and further forming a conductive metal layer thereon, and is characterized by applying heat treatment after forming at least the thin titanium layer by sputtering. A metallization method for aluminum nitride substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10143087A JPS63270454A (en) | 1987-04-24 | 1987-04-24 | Method for metallizing of aluminum nitride substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10143087A JPS63270454A (en) | 1987-04-24 | 1987-04-24 | Method for metallizing of aluminum nitride substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63270454A true JPS63270454A (en) | 1988-11-08 |
Family
ID=14300484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10143087A Pending JPS63270454A (en) | 1987-04-24 | 1987-04-24 | Method for metallizing of aluminum nitride substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63270454A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6456867A (en) * | 1987-08-27 | 1989-03-03 | Fujitsu Ltd | Method for metallizing aln ceramic |
| JPH03107451A (en) * | 1989-09-22 | 1991-05-07 | Sumitomo Cement Co Ltd | Formation of conductive metallic film |
-
1987
- 1987-04-24 JP JP10143087A patent/JPS63270454A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6456867A (en) * | 1987-08-27 | 1989-03-03 | Fujitsu Ltd | Method for metallizing aln ceramic |
| JPH03107451A (en) * | 1989-09-22 | 1991-05-07 | Sumitomo Cement Co Ltd | Formation of conductive metallic film |
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