JPH03107451A - Formation of conductive metallic film - Google Patents
Formation of conductive metallic filmInfo
- Publication number
- JPH03107451A JPH03107451A JP24526589A JP24526589A JPH03107451A JP H03107451 A JPH03107451 A JP H03107451A JP 24526589 A JP24526589 A JP 24526589A JP 24526589 A JP24526589 A JP 24526589A JP H03107451 A JPH03107451 A JP H03107451A
- Authority
- JP
- Japan
- Prior art keywords
- conductive metal
- metal film
- film
- deposited film
- ceramics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title claims description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 239000000919 ceramic Substances 0.000 claims abstract description 21
- 238000004544 sputter deposition Methods 0.000 claims abstract description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 13
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 4
- 239000000956 alloy Substances 0.000 claims abstract description 4
- 239000011261 inert gas Substances 0.000 claims abstract description 4
- 229910052574 oxide ceramic Inorganic materials 0.000 claims abstract 2
- 239000011224 oxide ceramic Substances 0.000 claims abstract 2
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 7
- 230000001070 adhesive effect Effects 0.000 abstract description 7
- 229910052697 platinum Inorganic materials 0.000 abstract description 5
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- 229910010293 ceramic material Inorganic materials 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 23
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、セラミックスの表面にスパッタリング堆積膜
形成法を用いて、セラミックスの表面に高い付着強度を
有する導電性金属膜を形成する導電性金属膜形成方法に
関する。Detailed Description of the Invention [Industrial Application Field] The present invention provides a conductive metal film that forms a conductive metal film with high adhesion strength on the surface of ceramics using a sputtering deposition film formation method on the surface of ceramics. This invention relates to a film forming method.
〔従来の技術および発明が解決しようとする課題〕従来
、セラミックスの表面に導電性金属膜を形成する方法と
してスパッタリング法、イオンブレーティング法、蒸着
法等の堆積膜形成法が用いられている。[Prior Art and Problems to be Solved by the Invention] Conventionally, deposited film forming methods such as sputtering, ion blasting, and vapor deposition have been used to form conductive metal films on the surfaces of ceramics.
スパッタリング堆積膜形成法を用いてセラミックスの表
面に導電性金属膜を形成する場合、導電性金属膜の膜厚
はスパッタリング処理時間に比例するので任意の膜厚に
することができる。しかしながら、スパッタリングの処
理時間を長くして膜厚を厚くする手法では、導電性金属
膜とセラミックスとの付着力が低く、膜を引掻くと導電
性金属膜の一部に剥離が生じてしまう。また、一般に、
（２）
膜厚を３０８以上に厚くすると膜自体の強度が低下して
膜が脆くなる恐れがある。When a conductive metal film is formed on the surface of a ceramic using a sputtering deposition film formation method, the thickness of the conductive metal film is proportional to the sputtering treatment time, so it can be made to have an arbitrary thickness. However, in the method of increasing the film thickness by increasing the sputtering processing time, the adhesion between the conductive metal film and the ceramic is low, and when the film is scratched, part of the conductive metal film peels off. Also, in general,
(2) If the film thickness is increased to 308 mm or more, the strength of the film itself may decrease and the film may become brittle.
従って、従来は、導電性金属膜に高い付着強度が必要と
される箇所へは、スパッタリング法により膜厚の厚い導
電性金属膜を適用することが難しかった。また、膜厚の
厚い導電性金属膜を形成する場合には付着強度の低下に
よる剥離等の障害を回避するため取扱いに特別の注意が
必要であった。Therefore, conventionally, it has been difficult to apply a thick conductive metal film by sputtering to locations where the conductive metal film requires high adhesion strength. Further, when forming a thick conductive metal film, special care has been required in handling to avoid problems such as peeling due to a decrease in adhesion strength.
本発明の目的は、上記従来技術の問題点に鑑み、高い付
着強度を有する比較的膜厚の厚い導電性金属膜をセラミ
ックス表面に形成する方法を提供することにある。SUMMARY OF THE INVENTION In view of the problems of the prior art described above, an object of the present invention is to provide a method for forming a relatively thick conductive metal film having high adhesion strength on a ceramic surface.
〔課題を解決するための手段（１）〕
本発明の導電性金属膜形成法は、セラミックスの表面に
スパッタリング堆積膜形成法により導電性金属膜を形成
し、次いでこの膜を５００℃〜１２００℃の温度で加熱
処理することを特徴とする。[Means for Solving the Problems (1)] The method for forming a conductive metal film of the present invention involves forming a conductive metal film on the surface of ceramics by a sputtering deposition film formation method, and then heating the film at 500°C to 1200°C. It is characterized by heat treatment at a temperature of .
（３）
〔作 用〕
本発明の方法によれば、セラミックスの表面にスパッタ
リング堆積膜形成法により形成した膜厚の厚い導電性金
属膜を加熱処理することによって、導電性金属膜とセラ
ミックスとの相互作用によりその付着強度が向上する。(3) [Function] According to the method of the present invention, by heat-treating a thick conductive metal film formed on the surface of a ceramic by a sputtering deposition film formation method, the connection between the conductive metal film and the ceramic is improved. The interaction improves the bond strength.
かくして、膜厚が厚く高い付着強度を有する導電性金属
膜を得ることができる。In this way, a conductive metal film having a large thickness and high adhesion strength can be obtained.
〔課題を解決するための手段（２）〕
スパッタリング堆積膜を形成する基体となるセラミック
スは格別限定されないが、主としてアルミナ（ｌａ０３
）および／またはジルコニア（ＺｒＯ，）からなる酸化
物系セラミックスが好ましく用いられる。[Means for solving the problem (2)] Ceramics that serve as the substrate for forming the sputtering deposited film are not particularly limited, but are mainly made of alumina (LA03
) and/or zirconia (ZrO, ) are preferably used.
導電性金属としては、白金、金、銀、タングステン、チ
タン、モリブデンおよびこれらの合金が用いられる。導
電性金属をセラミックス表面にスパッタリングにより堆
積せしめて膜を形成する方法自体は常用される方法によ
って行うことができ（４）
る。すなわち、導電性金属で構成されたターゲットを有
するスパッタリング装置内に不活性ガスを導入して１０
−３〜１０−’ ）−ルに調圧後、高電圧を印加してス
パッタリングを行いセラミックス表面に導電性金属膜を
形成する。一般に、膜厚は５ｐ〜３０ｊｍ程度とする。As the conductive metal, platinum, gold, silver, tungsten, titanium, molybdenum, and alloys thereof are used. The method of depositing a conductive metal on a ceramic surface by sputtering to form a film can be performed by a commonly used method (4). That is, an inert gas is introduced into a sputtering apparatus having a target made of a conductive metal.
-3 to 10-') After adjusting the pressure, a high voltage is applied and sputtering is performed to form a conductive metal film on the ceramic surface. Generally, the film thickness is about 5p to 30jm.
スパッタリング堆積膜を形成した後、大気中または窒素
ガスその他の不活性ガス雰囲気中で５００〜１．２００
℃、好ましくは８００〜９００℃に加熱する。500 to 1.200 in air or nitrogen gas or other inert gas atmosphere after forming the sputtering deposited film.
℃, preferably 800-900℃.
加熱温度が５００℃未満では付着強度の向上効果が得ら
れず、また、加熱温度が１．２００℃を超えると膜欠陥
、例えば、セラミックスチップの吸着ガスに由来すると
考えられるボイドが発生する。好適な加熱温度は導電性
金属に依存するが、例えば白金膜の場合は８００〜９０
０℃が好ましい。加熱時間は、一般に、０．５〜２時間
である。If the heating temperature is less than 500° C., no effect of improving adhesion strength will be obtained, and if the heating temperature exceeds 1.200° C., film defects, such as voids that are thought to originate from the adsorbed gas of the ceramic chip, will occur. The suitable heating temperature depends on the conductive metal, but for example, in the case of a platinum film, it is 800 to 90°C.
0°C is preferred. The heating time is generally 0.5 to 2 hours.
本発明の導電性金属膜形成法の一実施例として、スパッ
タリング堆積膜形成法を用いてアルミナセ（５）
ラミックスチップの表面に直径２ｍ０、膜厚１５角の白
金金属膜を形成し、大気中で加熱処理した場合について
説明する。As an example of the conductive metal film forming method of the present invention, a platinum metal film with a diameter of 2 m0 and a film thickness of 15 squares was formed on the surface of an alumina (5) ceramic chip using a sputtering deposition film forming method. The case of heat treatment will be explained below.
アルミナセラミックスチップと白金（Ｐｔ；９９．９９
％）のターゲットをそれぞれ用意した。次いで、このア
ルミナセラミックスチップ表面を超音波洗浄し、白金金
属膜が２１１１１１１径になるようにマスキングした後
、スパッタリング装置に装着した。スパッタリング装置
内を圧力Ｉ Ｘｌ０−６）−ルの高真空に脱気した後、
アルゴンガスを導入してＩ Ｘｌ０−’トールに調圧し
、このような状態で逆放電させ５分間保持し、アルミナ
チップの表面をエツチングした。次いで、前記白金（Ｐ
ｔ）製ターゲットによりｌｋｗの出力で４時間のスパッ
タリングを行ない、前記アルミナチップの表面に直径２
ｍｍ、膜厚１５μの白金金属膜を形成し、さらにこの結
果得られた白金金属膜を有するアルミナセラミックスチ
ップを酸化炉にて加熱処理を行った。Alumina ceramic chips and platinum (Pt; 99.99
%) targets were prepared for each. Next, the surface of this alumina ceramic chip was subjected to ultrasonic cleaning, masked so that the platinum metal film had a diameter of 2111111, and then installed in a sputtering device. After degassing the inside of the sputtering apparatus to a high vacuum of pressure IXl0-6),
Argon gas was introduced and the pressure was adjusted to IX10-' torr, and reverse discharge was maintained in this state for 5 minutes to etch the surface of the alumina chip. Next, the platinum (P
Sputtering was performed for 4 hours using a target made of T.
A platinum metal film with a thickness of 15 μm and a thickness of 15 μm was formed, and the resulting alumina ceramic chip having the platinum metal film was heat-treated in an oxidation furnace.
白金金属膜の加熱処理温度を変化させ、アルミナセラミ
ックスと白金金属膜との付着強度を測定（６）
した。The adhesion strength between the alumina ceramics and the platinum metal film was measured by varying the heat treatment temperature of the platinum metal film (6).
第１図は、本実施例で使用した白金金属膜の付着強度試
験片の説明図である。同図に示すように、アルミナセラ
ミックステップ１に白金金属膜２を形成し加熱処理した
後、白金金属膜２に円柱形状金属３をろう付けし白金金
属膜の付着強度試験片を作成した。付着強度試験の方法
としては、アルミナセラミックステップ１を固定し、円
柱形状金属３を引っ張り試験機にて引っ張ることにより
アルミナセラミックスチップと白金金属膜との付着強度
を測定した。FIG. 1 is an explanatory diagram of a platinum metal film adhesion strength test piece used in this example. As shown in the figure, after a platinum metal film 2 was formed on an alumina ceramic step 1 and heat treated, a cylindrical metal 3 was brazed to the platinum metal film 2 to prepare a platinum metal film adhesion strength test piece. As a method of adhesion strength test, the alumina ceramic step 1 was fixed and the cylindrical metal 3 was pulled using a tensile tester to measure the adhesion strength between the alumina ceramic chip and the platinum metal film.
加熱処理は大気中６００℃、７００℃、８００℃および
９００℃の各温度で３０分間行った。付着強度測定結果
を第２図に示す。第２図（イ）、（ロ）、（ハ）。The heat treatment was performed in the air at temperatures of 600°C, 700°C, 800°C and 900°C for 30 minutes. The adhesion strength measurement results are shown in Figure 2. Figure 2 (a), (b), (c).
（ニ）は、それぞれ、加熱温度６００℃、７００℃。(d) is a heating temperature of 600°C and 700°C, respectively.
８００℃および９００℃に対応する付着強度（ｋｇ／φ
２ ｍｍ） （横軸）の度数分布（縦軸）（ｎ＝３０）
を示す。Adhesive strength (kg/φ) corresponding to 800℃ and 900℃
2 mm) (horizontal axis) (vertical axis) (n=30)
shows.
第２図かられかるように、特に加熱温度８００℃および
９００℃において良好な結果が得られる。すなわち、８
００℃での付着強度は、バラツキが多少（７）
あるが、６００℃５７００℃で加熱処理した時と比して
付着強度が高い値に分布している。９００℃での付着強
度は、８００℃と同じくらいの高い値に分布しており付
着強度のバラツキも少く付着強度が安定して向上してい
る。よって、白金金属膜は、右よそ８００℃〜９００℃
の温度で加熱処理することが望ましいことが判る。As can be seen from FIG. 2, particularly good results are obtained at heating temperatures of 800°C and 900°C. That is, 8
Although there is some variation in the adhesive strength at 00°C (7), the adhesive strength is distributed at higher values than when heat treated at 600°C and 5700°C. The adhesion strength at 900°C is distributed at a value as high as that at 800°C, and there is little variation in the adhesion strength, and the adhesion strength is stably improved. Therefore, the temperature of the platinum metal film is 800°C to 900°C on the right side.
It can be seen that it is desirable to perform the heat treatment at a temperature of .
なお、５００℃未満の熱処理温度では付着強度の向上が
殆ど認められず、また、熱処理温度が１２００℃を超え
るとアルミナセラミックスチップの吸着ガスに由来する
と考えられるボイドが発生し、付着強度を測定すること
ができなかった。In addition, when the heat treatment temperature is less than 500°C, almost no improvement in bond strength is observed, and when the heat treatment temperature exceeds 1200°C, voids are generated, which are thought to be derived from the adsorbed gas of the alumina ceramic chip, and the bond strength is measured. I couldn't.
比較のために、加熱処理を行わず白金金属膜を形成した
ままのものも用意し、これについても同じ方法にて付着
強度試験を行った。付着強度測定結果を第２図（ホ）に
示す。For comparison, a sample with a platinum metal film formed thereon without heat treatment was also prepared, and an adhesion strength test was also conducted on this using the same method. The adhesion strength measurement results are shown in Figure 2 (e).
これらの結果から明らかなように熱処理を施すことによ
って白金金属膜の膜厚を比較的厚くしても高い付着強度
を得ることができる。As is clear from these results, high adhesion strength can be obtained by heat treatment even if the thickness of the platinum metal film is made relatively thick.
（８）
〔発明の効果〕
以上実施例に示されるように、本発明によればセラミッ
クスの表面に比較的膜厚が厚く、高い付着強度を有する
導電性金属膜を形成することができる。従って、本発明
により得られる製品は、厚い膜厚と高い付着強度を有す
る導電性金属膜が望まれている精密測定機器、医療用機
器、情報処理装置等の電磁波シールド等として有用であ
る。(8) [Effects of the Invention] As shown in the Examples above, according to the present invention, a conductive metal film having a relatively thick film thickness and high adhesion strength can be formed on the surface of ceramics. Therefore, the product obtained according to the present invention is useful as an electromagnetic shield for precision measuring instruments, medical equipment, information processing equipment, etc. in which a conductive metal film having a thick film thickness and high adhesion strength is desired.
第１図は付着強度測定用試験片の説明図である。
第２図（イ）、（ロ）、（ハ）、（ニ）はそれぞれ温度
６００℃、７００℃、８００℃、９００℃で熱処理した
ときの付着強力の度数分布を示し、同図（ホ）は熱処理
を行わなかったときの付着強力の度数分布を示し、同図
（ホ）は熱処理を行わなかったときの付着強力の度数分
布を示す図である。
（９）
５．０
１０．０
）
第
図FIG. 1 is an explanatory diagram of a test piece for measuring adhesive strength. Figure 2 (a), (b), (c), and (d) show the frequency distribution of adhesion strength when heat treated at temperatures of 600°C, 700°C, 800°C, and 900°C, respectively; 2 shows the frequency distribution of adhesion strength when no heat treatment is performed, and (E) is a diagram showing the frequency distribution of adhesion strength when no heat treatment is performed. (9) 5.0 10.0) Figure
Claims (4)
により導電性金属膜を形成し、次いでこの膜を５００℃
〜１２００℃の温度で加熱処理することを特徴とする付
着強度の高い導電性金属膜を形成する方法。1. A conductive metal film is formed on the surface of the ceramic by sputtering deposition film formation method, and then this film is heated at 500°C.
A method for forming a conductive metal film with high adhesion strength, characterized by heat treatment at a temperature of ~1200°C.
３）またはジルコニア（ＺｒＯ＿２）からなる酸化物系
セラミックスである請求項１記載の導電性金属膜形成方
法。2. Ceramics are mainly made of alumina (Al_2O_
3) The method for forming a conductive metal film according to claim 1, wherein the conductive metal film is an oxide ceramic made of zirconia (ZrO_2) or zirconia (ZrO_2).
は２種類以上の金属の合金からなり、その膜厚が５μｍ
〜３０μｍの範囲である請求項１または２記載の導電性
金属膜形成方法。3. The conductive metal film is made of a single metal or an alloy of two or more metals with good conductivity, and the film thickness is 5 μm.
3. The method for forming a conductive metal film according to claim 1 or 2, wherein the conductive metal film has a thickness in the range of .about.30 .mu.m.
〜９００℃の温度で行う請求項１〜３のいずれかに記載
の導電性金属膜形成方法。4. Heat treatment at 800℃ in air or inert gas
The method for forming a conductive metal film according to any one of claims 1 to 3, which is carried out at a temperature of ~900°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24526589A JPH03107451A (en) | 1989-09-22 | 1989-09-22 | Formation of conductive metallic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24526589A JPH03107451A (en) | 1989-09-22 | 1989-09-22 | Formation of conductive metallic film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03107451A true JPH03107451A (en) | 1991-05-07 |
Family
ID=17131110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24526589A Pending JPH03107451A (en) | 1989-09-22 | 1989-09-22 | Formation of conductive metallic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03107451A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EA016701B1 (en) * | 2008-09-18 | 2012-06-29 | Государственное Научное Учреждение "Физико-Технический Институт Национальной Академии Наук Беларуси" | Method of deposition of multilayer corrosion resistant coating |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63270454A (en) * | 1987-04-24 | 1988-11-08 | Hitachi Chem Co Ltd | Method for metallizing of aluminum nitride substrate |
| JPH01136961A (en) * | 1987-11-24 | 1989-05-30 | Toyota Central Res & Dev Lab Inc | Ceramic-matrix having metallic layer and its manufacture |
-
1989
- 1989-09-22 JP JP24526589A patent/JPH03107451A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63270454A (en) * | 1987-04-24 | 1988-11-08 | Hitachi Chem Co Ltd | Method for metallizing of aluminum nitride substrate |
| JPH01136961A (en) * | 1987-11-24 | 1989-05-30 | Toyota Central Res & Dev Lab Inc | Ceramic-matrix having metallic layer and its manufacture |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EA016701B1 (en) * | 2008-09-18 | 2012-06-29 | Государственное Научное Учреждение "Физико-Технический Институт Национальной Академии Наук Беларуси" | Method of deposition of multilayer corrosion resistant coating |
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