JPS63270396A - Production of magnetooptical element - Google Patents
Production of magnetooptical elementInfo
- Publication number
- JPS63270396A JPS63270396A JP10513187A JP10513187A JPS63270396A JP S63270396 A JPS63270396 A JP S63270396A JP 10513187 A JP10513187 A JP 10513187A JP 10513187 A JP10513187 A JP 10513187A JP S63270396 A JPS63270396 A JP S63270396A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- lattice constant
- crystal
- optical element
- magneto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000013078 crystal Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 24
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000002223 garnet Substances 0.000 claims abstract description 18
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 13
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 13
- 229910052742 iron Inorganic materials 0.000 claims abstract description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 4
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 3
- 230000002040 relaxant effect Effects 0.000 claims abstract 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000007791 liquid phase Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 230000005389 magnetism Effects 0.000 claims 1
- 238000005336 cracking Methods 0.000 abstract description 3
- 238000005204 segregation Methods 0.000 description 5
- 229910015372 FeAl Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910009493 Y3Fe5O12 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は磁気光学素子の製造方法に関し、特にファラデ
ー効果を利用した光アイソレータ、光サーキュレータ、
光スィッチ等に用いられる磁気光学素子用ガーネット結
晶の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method of manufacturing a magneto-optical element, and in particular to an optical isolator, an optical circulator, and an optical circulator using the Faraday effect.
The present invention relates to a method of manufacturing garnet crystal for magneto-optical elements used in optical switches and the like.
従来の技術
最近、光通信分野において、光源に用いられる半導体レ
ーザにおける戻り光誘起雑音が問題となっており、伝送
品質の低下をもたらしている。この問題を解決するため
に、光アイソレータが半導体レーザの出力段に設けられ
ている。１．３μｍ帯の長波長帯アイソレータには、電
子通信学会技術研究報告０ＱＥ７Ｂ−１３３にある様に
、Ｙ３Ｆｅ５Ｏ１２（ＹＩＧ）で表わされるイツトリウ
ム。BACKGROUND OF THE INVENTION Recently, in the field of optical communications, feedback induced noise in semiconductor lasers used as light sources has become a problem, causing a reduction in transmission quality. To solve this problem, an optical isolator is provided at the output stage of the semiconductor laser. Yttrium represented by Y3Fe5O12 (YIG) is used for the 1.3 μm band long wavelength band isolator, as stated in IEICE technical research report 0QE7B-133.
鉄、ガーネット結晶が用いられる。このＹ Ｉ Ｇの波
長１．３μｍにおけるファラデー回転角は２２００／ｙ
ａであるので、光アイソレータに用いる場合、偏光面を
４６°回転させる結晶長として、約２．１ｍｍ必要とな
る。このＹＩＧの製法は、フラックス法又はフローティ
ングゾーン法によるものである。しかしながら、これら
の製法によるバルリ単結晶は。Iron and garnet crystals are used. The Faraday rotation angle of this Y I G at a wavelength of 1.3 μm is 2200/y
a, when used in an optical isolator, the crystal length required to rotate the plane of polarization by 46° is approximately 2.1 mm. This YIG production method is based on a flux method or a floating zone method. However, the Baruri single crystal produced by these methods.
製造日数が長く、又、一時に製造できる量が少ない事か
ら、コストが高くなる欠点がある。しかし。It takes a long time to manufacture, and the amount that can be manufactured at one time is small, resulting in high costs. but.
最近ではビスマスを含むガーネット結晶（Ｂ ｔｌ（ｅ
）３Ｆｌｅ Ｅｐ１２ （Ｒ＠ ”、希土類元素）カ
従来ノＹＩＧに比較して、ファラデー回転角が一桁程度
大きく、必要な結晶長として、２００−２５００μｍと
従来の％程度で良い事から、光アイソレータに応用され
ようとしている。さらに、 （ＢｔＲｅ ）３Ｆｅ６
０．□結晶が１例えばＧｄ５Ｑａ６ｏ１゜（ＧＧＧ）で
表わされるガドリウム、ガリウムガーネット基板上に。Recently, garnet crystals containing bismuth (B tl(e
)3Fle Ep12 (R@'', rare earth element) Compared to conventional YIG, the Faraday rotation angle is about an order of magnitude larger, and the required crystal length is 200-2500 μm, which is about % of the conventional value, making it suitable for optical isolators. In addition, (BtRe)3Fe6
0. □ On a gadolinium or gallium garnet substrate where the crystal is expressed as 1, for example, Gd5Qa6o1° (GGG).
エピタキシャル法で２００〜５００μｍ成長する事がで
きれば、格段の低コスト化が期待できる。If it is possible to grow 200 to 500 μm using the epitaxial method, a significant cost reduction can be expected.
発明が解決しようとする問題点
しかしながら、基板に用いるＧＧＧと
、 （Ｂ為Ｒｅ）３Ｆｅ５ｏ１２結晶の熱膨張係数の
差が大きく、例えば２００〜６００μｍの厚膜結晶を成
長させた場合、割れが生じ歩留りを著しく低下させる問
題点がある。Problems to be Solved by the Invention However, there is a large difference in the coefficient of thermal expansion between GGG used for the substrate and (B-Re)3Fe5o12 crystal, and when a thick film crystal of, for example, 200 to 600 μm is grown, cracks occur and the yield decreases. There is a problem that significantly reduces the
問題点を解決するための手段
本発明は、上記問題点を解決するために、希土類ガリウ
ムガーネット結晶からなる基板上に、ビスマス及び鉄を
含むガーネット結晶をエピタキシャル法により成長させ
る際に、前記ビスマス及び鉄を含むガーネット結晶と前
記基板との間に、徐々にガリウム又はアルミニウム濃度
が変化するビスマス及び鉄及びガリウム又はアルミニウ
ムを含むガーネット結晶からなる格子定数差緩和層を設
けるものであり、具体的には成長速度を徐々に変化させ
る事により格子定数差緩和層を得るものであジ、さらに
、前記基板の回転数を徐々に変化させて格子定数差緩和
層を得るものであり、さらに気相成長法においては前記
基板の温度を徐々に変化させて格子定数差緩和層を得る
ものである。Means for Solving the Problems In order to solve the above problems, the present invention provides a method for growing a garnet crystal containing bismuth and iron by an epitaxial method on a substrate made of rare earth gallium garnet crystal. A lattice constant difference relaxation layer made of bismuth and garnet crystal containing iron and gallium or aluminum in which the gallium or aluminum concentration gradually changes is provided between the garnet crystal containing iron and the substrate, and specifically, The lattice constant difference relaxation layer is obtained by gradually changing the growth rate, and the lattice constant difference relaxation layer is obtained by gradually changing the rotation speed of the substrate, and furthermore, the lattice constant difference relaxation layer is obtained by a vapor phase growth method. In this method, a lattice constant difference relaxation layer is obtained by gradually changing the temperature of the substrate.
作用
本発明は上記した方法により１割れの発生が無く、歩留
り良く所望の厚みのビスマス及び鉄を含むガーネット結
晶が得られるものであり、以下にその理由を述べる。Function: According to the present invention, a garnet crystal containing bismuth and iron having a desired thickness can be obtained without occurrence of single cracks and with a high yield by the method described above, and the reason for this will be described below.
問題点で述べた様に、直接ＧＧＧ基板上にビスマス及び
鉄を含むガーネット結晶例えば。As mentioned in the problem section, for example, garnet crystals containing bismuth and iron can be placed directly on the GGG substrate.
（ＢｔＲｅ）３Ｆｅ、０．２を液相エピタキシャル法で
成長させる時に割れが発生し、著しく歩留りを悪化させ
るのは、熱膨張係数カＧ Ｇ Ｇ テ８．８Ｘ１０
［：１／’Ｃ） 。When (BtRe)3Fe, 0.2 is grown using the liquid phase epitaxial method, cracks occur and the yield deteriorates significantly due to the thermal expansion coefficient G G G Te 8.8X10
[:1/'C).
（ＢｔＲ，）３Ｆｅ６０１２が約１１ Ｘ １０−６（
１／”Ｃ〕 と大きな差が有るためで有る。従って、
第３図に示す様に、室温で格子定数が一致していても、
成長温度での格子定数差が大きく５割れの原因となる。(BtR,)3Fe6012 is about 11 x 10-6 (
This is because there is a large difference from 1/”C]. Therefore,
As shown in Figure 3, even if the lattice constants match at room temperature,
The difference in lattice constant at the growth temperature is large and causes 5 cracks.
しかし、第１図に示す様に、熱膨張係数と格子定数が、
基板１と（Ｂ Ｉ Ｒ＠ ）３Ｆｅ ５０１２３の中間
の値であり、その値が徐々に変化する格子定数差を緩和
する結晶層２を設置する事によって、結晶の割れを防ぐ
事ができる。一般に、第２図に示すように（ＢｉＲｅ）
３（ＦｅＧａ）６０１２、又は（Ｂ Ｉ Ｒｅ ）３（
Ｆ ｅＡｌ ）ｓ○１２結晶においては、 Ｂｉ 濃度
が増加すると、膨張係数は大きくなり、格子定数も大き
くなる。逆に、Ｇａ又はＭ の濃度が増加すると、膨張
係数は小さくなり、格子定数も小さくなる。従って、基
板１と（Ｂ Ｉ Ｒｅ ）３Ｆ ｅｓｏ１２結晶３の間
の格子定数差緩和層として、 Ｂｉ 及びＧａ又はＭの
濃度が徐々に変化する結晶を使用する事ができる。However, as shown in Figure 1, the thermal expansion coefficient and lattice constant are
By providing the crystal layer 2 which alleviates the difference in lattice constant whose value is intermediate between that of the substrate 1 and (B I R@ )3Fe 50123 and whose value changes gradually, cracking of the crystal can be prevented. Generally, as shown in Figure 2 (BiRe)
3(FeGa)6012, or (B I Re )3(
In the FeAl)s○12 crystal, as the Bi concentration increases, the expansion coefficient increases and the lattice constant also increases. Conversely, as the concentration of Ga or M increases, the expansion coefficient decreases and the lattice constant also decreases. Therefore, as the lattice constant difference relaxation layer between the substrate 1 and the (B I Re )3F eso12 crystal 3, a crystal in which the concentration of Bi and Ga or M gradually changes can be used.
さらに、 Ｂｉ及びＧａ 又はＡβの濃度を徐々に変
化させる方法として、成長速度を徐々に変化させ、エピ
タキシャル成長時の偏析の成長速度依存性を利用する。Furthermore, as a method of gradually changing the concentration of Bi and Ga or Aβ, the growth rate is gradually changed and the dependence of segregation during epitaxial growth on the growth rate is utilized.
エピタキシャル成長における有効偏析係数（ｋｅｆｆ）
は一般に固相と液相中の濃度比であるが、成長中の定常
状態では。Effective segregation coefficient (keff) in epitaxial growth
is generally the concentration ratio in the solid and liquid phases, but at steady state during growth.
となる。ここで、に０ は平衡偏析係数、ｆは成長速
度、δは拡散層の厚み、Ｄは液相中での拡散定数である
。（１）式かられかる様に、 Ｂｉの様にに０〈１の場
合、成長速度ｆを大きくすれば、有効偏析係数ｋ。ｆｆ
は大きくなり、逆に、ＧａやＡｌの様にに０〈１ の場
合、成長速度ｆを大きくすれば有効偏析係数ｋ。ｆｆは
小さくなる。従って、（ＢｉＲｅ）３（ＦｅＧａ）６０
．２又は、（ＢＩＲｅ）３（ＦｅＡｌ）６ｏ１２の成長
速度を徐々に大きくする事により、第２図に示した格子
定数と熱膨張係数を持った格子定数差緩和層を得る事が
できる。成長速度ｆは、基板の回転数、成長温度を変化
させる事により、制御する事ができる。becomes. Here, 0 is the equilibrium segregation coefficient, f is the growth rate, δ is the thickness of the diffusion layer, and D is the diffusion constant in the liquid phase. As can be seen from equation (1), in the case of 0 < 1 like Bi, if the growth rate f is increased, the effective segregation coefficient k. ff
On the other hand, in the case of Ga and Al where 0<1, increasing the growth rate f increases the effective segregation coefficient k. ff becomes smaller. Therefore, (BiRe)3(FeGa)60
．． By gradually increasing the growth rate of 2 or (BIRe)3(FeAl)6o12, a lattice constant difference relaxation layer having the lattice constant and thermal expansion coefficient shown in FIG. 2 can be obtained. The growth rate f can be controlled by changing the rotation speed of the substrate and the growth temperature.
実施例
本発明の一実施例の構造を第１図に示す。本実施例では
、基板にＣａ −Ｍｇ−Ｚｎ置換ＧＧＧ結晶１、格子定
数差緩和層２に（ＢｉＧｄＬｕ）３（ＦｅＧａ ）６０
１２を用い、その上に（ＢｔＧｄＬｕ）３Ｆｅ６０１゜
、 ３を成長させる場合、格子定数差緩和層を得るのに
成長温度を変化させる事を利用した、液相エピタキシャ
ル成長による製造方法を示す。基板の格子定数は１２．
４９７人であるＣａ −Ｍｇ−Ｚｎ置換Ｇｄ５Ｇａ５Ｑ
１２結品を用いた。成長に用いたフラックスは。Embodiment The structure of an embodiment of the present invention is shown in FIG. In this example, the substrate is a Ca-Mg-Zn substituted GGG crystal 1, and the lattice constant difference relaxation layer 2 is (BiGdLu)3(FeGa)60.
12 and on which (BtGdLu)3Fe601°,3 is grown, a manufacturing method using liquid phase epitaxial growth is shown in which changing the growth temperature is used to obtain a lattice constant difference relaxation layer. The lattice constant of the substrate is 12.
497 Ca-Mg-Zn substituted Gd5Ga5Q
12 pieces were used. What is the flux used for growth?
Ｐｂｏ−Ｂ１２０３−Ｂ２Ｑ３系テアリ、水平ディピン
ク法で基板回転数を１００ ｒｐｍとした。格子定数差
緩和層は、組成が、（Ｂｌｏ、８Ｇｄ１．２Ｌｕ１．０
）（Ｆｅ４．３Ｇａｏ、７）０１２から（Ｂｌｏ、９Ｇ
ｄ４．１Ｌｕ１．。）（Ｆｅ４．ｄＧａｌ、０）０１２
まで３０μｍの厚みに渡って徐々に変化するものを、成
長温度を１０ｄｅｇ変化させる事によって得た。The Pbo-B1203-B2Q3 system Tearly was used, and the substrate rotation speed was set to 100 rpm using the horizontal dipinking method. The composition of the lattice constant difference relaxation layer is (Blo, 8Gd1.2Lu1.0
) (Fe4.3Gao, 7) from 012 (Blo, 9G
d4.1Lu1. . ) (Fe4.dGal, 0)012
By changing the growth temperature by 10 deg, the growth temperature gradually changed over a thickness of 30 μm.
さらにその上に、 （Ｂ １１． ｏＧｄｌ、 ｏＬ
ｕ １． ｏ ） Ｆ ｅｓｏ１２結晶を３００μｍの
厚みで１割れの発生がなく。Furthermore, on top of that, (B 11. oGdl, oL
u1. o) Feso12 crystal with a thickness of 300 μm without any cracks.
成長を行った。また、この実施例においては各層の格子
定数差（Δａ／Ｉｌ）は、３×１０ 以内におさまって
おり、極めて結晶性の良い物であった。なお本実施例で
は、格子定数差緩和層に
（ＢｔＧｄＬｕ ）３（ＦｅＧａ ）６０１□を用いた
が、（Ｂ ｉ Ｒｅ ）３（ＦｅＡｌ）６ｏ１２でも良
好な結果を得ている。また格子定数差緩和層を得るのに
、成長温度の変化による成長速度の変化を利用したが、
基板の回転数を変化させる事を利用しても良い。さらに
本実施例は、液相エピタキシャル成長法を用いた場合に
ついて述べて来たが、（１）式で示される様な拡散律速
で成長が行われている成長法、例えば、スパッタ法やＣ
ＶＤ法などの気相成長に対しても適用できるものである
。I grew up. Further, in this example, the lattice constant difference (Δa/Il) between each layer was within 3×10 2 , indicating extremely good crystallinity. In this example, (BtGdLu)3(FeGa)601□ was used for the lattice constant difference relaxation layer, but good results were also obtained with (B i Re )3(FeAl)6o12. In addition, changes in growth rate due to changes in growth temperature were used to obtain a lattice constant difference relaxation layer, but
Changing the rotation speed of the substrate may also be used. Furthermore, although this embodiment has been described using a liquid phase epitaxial growth method, other methods such as sputtering or C
It can also be applied to vapor phase growth such as the VD method.
発明の効果
以上述べてきた様に、本発明による製造方法を用いて、
基板との間に、熱膨張係数の差を緩和するだめの、格子
定数差緩和層を設けることにより。Effects of the invention As described above, using the manufacturing method according to the present invention,
By providing a lattice constant difference relaxation layer between the substrate and the substrate to alleviate the difference in thermal expansion coefficient.
割れの発生が無く、歩留り良く、所望の磁気光学素子を
得ることができ、その゛工業的価値は大なるものがある
。A desired magneto-optical element can be obtained with no cracking and a high yield, and has great industrial value.
第１図は本発明の一実施例による製造方法を説明するた
めの断面図、第２図は本実施例方法の作用を説明するた
めの特性図、第３図は従来方法を説明するだめの特性図
である。
１・・・・・・ＧＧＧ基板、２・・・・・・格子定数差
緩和層、３・−−−−−（ＢｔＲｅ ）３Ｆｅ６０１゜
結晶。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名３−
−−（１２に）ｊＦｅ、Ｄ（ｇ
２−−−（ｋｋ）ｙ（ＦｅＧａ）Ａｔ １１ｘ（Ｂｔｋ
’５（ＦｔＡＩ）５υ１２逼 ／（FIG. 1 is a sectional view for explaining the manufacturing method according to an embodiment of the present invention, FIG. 2 is a characteristic diagram for explaining the operation of the method of this embodiment, and FIG. 3 is a cross-sectional view for explaining the conventional method. It is a characteristic diagram. DESCRIPTION OF SYMBOLS 1... GGG substrate, 2... Lattice constant difference relaxation layer, 3.---(BtRe)3Fe601° crystal. Name of agent: Patent attorney Toshio Nakao and 1 other person3-
--(12)jFe,D(g 2---(kk)y(FeGa)At 11x(Btk
'5(FtAI)5υ12〼 /(
Claims (4)
、ビスマス、及び鉄を含むガーネット結晶をエピタキシ
ャル法により成長させるに際し、前記ビスマス及び鉄を
含むガーネット結晶と前記基板との間に、徐々にビスマ
ス及びガリウム又はアルミニウム濃度が変化するビスマ
ス及び鉄及びガリウム又はアルミニウムを含むガーネッ
ト結晶からなる格子定数差緩和層を設けるようにした磁
気光学素子の製造方法。(1) When growing a garnet crystal containing bismuth and iron by an epitaxial method on a substrate made of rare earth gallium garnet crystal, the bismuth and gallium are gradually grown between the garnet crystal containing bismuth and iron and the substrate. Alternatively, a method for manufacturing a magneto-optical element in which a lattice constant difference relaxing layer is provided which is made of garnet crystal containing bismuth, iron, and gallium or aluminum with varying aluminum concentrations.
ル法により行うものとし、成長速度を徐々に変化させる
ことにより格子定数差緩和層を得るようにした特許請求
の範囲第１項記載の磁気光学素子の製造方法。(2) The magnetism according to claim 1, wherein the magneto-optical element is manufactured by liquid phase and vapor phase epitaxial methods, and the lattice constant difference relaxation layer is obtained by gradually changing the growth rate. A method for manufacturing an optical element.
ル法により行うものとし、基板の回転数を徐々に変化さ
せることにより格子定数差緩和層を得るようにした特許
請求の範囲第１項記載の磁気光学素子の製造方法。(3) The magneto-optical element is manufactured by liquid phase and vapor phase epitaxial methods, and the lattice constant difference relaxation layer is obtained by gradually changing the rotational speed of the substrate. A method for manufacturing a magneto-optical element.
気相成長法により行うものとし、基板の温度を徐々に変
化させることにより格子定数差緩和層を得るようにした
特許請求の範囲第１項記載の磁気光学素子の製造方法。(4) The magneto-optical element is manufactured by a vapor phase growth method such as a sputtering method or a CVD method, and the lattice constant difference relaxation layer is obtained by gradually changing the temperature of the substrate. A method for manufacturing a magneto-optical element according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10513187A JPH0774118B2 (en) | 1987-04-28 | 1987-04-28 | Method for manufacturing magneto-optical element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10513187A JPH0774118B2 (en) | 1987-04-28 | 1987-04-28 | Method for manufacturing magneto-optical element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63270396A true JPS63270396A (en) | 1988-11-08 |
| JPH0774118B2 JPH0774118B2 (en) | 1995-08-09 |
Family
ID=14399208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10513187A Expired - Fee Related JPH0774118B2 (en) | 1987-04-28 | 1987-04-28 | Method for manufacturing magneto-optical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0774118B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63291028A (en) * | 1987-05-25 | 1988-11-28 | Furukawa Electric Co Ltd:The | Farady element |
| WO1993009672A1 (en) * | 1991-11-22 | 1993-05-27 | Commonwealth Scientific And Industrial Research Organisation | Insect pest control |
| WO2022004077A1 (en) * | 2020-07-03 | 2022-01-06 | 信越化学工業株式会社 | Bismuth-substituted rare earth iron garnet single crystal film production method, faraday rotator, and optical isolator |
-
1987
- 1987-04-28 JP JP10513187A patent/JPH0774118B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63291028A (en) * | 1987-05-25 | 1988-11-28 | Furukawa Electric Co Ltd:The | Farady element |
| WO1993009672A1 (en) * | 1991-11-22 | 1993-05-27 | Commonwealth Scientific And Industrial Research Organisation | Insect pest control |
| WO2022004077A1 (en) * | 2020-07-03 | 2022-01-06 | 信越化学工業株式会社 | Bismuth-substituted rare earth iron garnet single crystal film production method, faraday rotator, and optical isolator |
| JP2022013228A (en) * | 2020-07-03 | 2022-01-18 | 信越化学工業株式会社 | Method for manufacturing bismuth substitution rare earth iron garnet single crystal film, faraday rotor and optical isolator |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0774118B2 (en) | 1995-08-09 |
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| LAPS | Cancellation because of no payment of annual fees |