JPH0576611B2 - - Google Patents
Info
- Publication number
- JPH0576611B2 JPH0576611B2 JP59244443A JP24444384A JPH0576611B2 JP H0576611 B2 JPH0576611 B2 JP H0576611B2 JP 59244443 A JP59244443 A JP 59244443A JP 24444384 A JP24444384 A JP 24444384A JP H0576611 B2 JPH0576611 B2 JP H0576611B2
- Authority
- JP
- Japan
- Prior art keywords
- optical isolator
- mnte
- hgte
- cdte
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 50
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000013078 crystal Substances 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229910004613 CdTe Inorganic materials 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 238000010587 phase diagram Methods 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims 4
- 229910045601 alloy Inorganic materials 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 239000003708 ampul Substances 0.000 description 5
- 229910052793 cadmium Inorganic materials 0.000 description 5
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004262 HgTe Inorganic materials 0.000 description 2
- 229910017231 MnTe Inorganic materials 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910004813 CaTe Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は光通信に用いられる光アイソレータお
よび、光アイソレータ、半導体レーザ、半導波路
を複合化した薄膜素子の構造とその構造に有用な
磁性半導体材料に関する。Detailed Description of the Invention [Field of Application of the Invention] The present invention relates to the structure of an optical isolator used in optical communication, a thin film element that combines an optical isolator, a semiconductor laser, and a semi-waveguide, and a magnetic semiconductor useful for the structure. Regarding materials.
近年、情報量の増大に伴い、光通信の実用化が
進んでおり、光部品の小型化、高信頼化に対する
要求が増している。光通信システムの中で光アイ
ソレータはレーザ光源の安定化を図る上で重要な
役割を担つている。
In recent years, as the amount of information has increased, optical communications have been put into practical use, and there is an increasing demand for smaller and more reliable optical components. Optical isolators play an important role in stabilizing laser light sources in optical communication systems.
光アイソレータは、第１図の基本構成図に示し
たように、フアラデー回転効果を有する光磁気材
料が使用される。偏光子２により、直線偏光にな
つたレーザ光３は、直流磁界下に置かれた光アイ
ソレータ１を通過する間に45°偏光面が回転する。
検光子４の偏光面を45°にすれば、レーザ５から
出た光は検光子４を通過することができる。しか
し、光フアイバなどの端面で反射した、逆方向の
レーザ光６は、光アイソレータ１により、90°に
偏光面が回転し、偏光子２を通過することはでき
ず、レーザ５には戻らない。そのため、レーザ５
の安定が保たれる。これまで、光アイソレータに
はバルクのイツトリウム・鉄、ガーネツト（Y3
Fe5O12：YIG）単結晶が使われてきたが、装置
の小型化、高信頼化のために薄膜型光アイソレー
タの開発［たとえば、滝、宮崎、赤尾、信学技報
MW80−95（1981）］が行われている。さらに、
−族化合物半導体との一体化も考えられてい
る。 As shown in the basic configuration diagram of FIG. 1, the optical isolator uses a magneto-optical material having a Faraday rotation effect. The laser beam 3, which has become linearly polarized by the polarizer 2, has its plane of polarization rotated by 45° while passing through the optical isolator 1 placed under a DC magnetic field.
If the polarization plane of the analyzer 4 is set to 45°, the light emitted from the laser 5 can pass through the analyzer 4. However, the laser beam 6 in the opposite direction reflected from the end face of the optical fiber etc. has its plane of polarization rotated by 90° by the optical isolator 1, and cannot pass through the polarizer 2 and does not return to the laser 5. . Therefore, the laser 5
stability is maintained. Until now, optical isolators have been made using bulk yttrium/iron or garnet ( Y3
Fe 5 O 12 :YIG) single crystals have been used, but thin film optical isolators have been developed to make devices smaller and more reliable [e.g., Taki, Miyazaki, Akao, IEICE Technical Report].
MW80-95 (1981)] was conducted. moreover,
Integration with - group compound semiconductors is also being considered.
しかしながら、ガーネツトと−族化合物は
結晶構造、熱膨張係数が違つており、ガーネツト
と−族化合物の一体化は薄膜中にひずみを発
生させる原因になり易い。光アイソレータ中にひ
ずみがあると光は楕円偏光し、アイソレーシヨン
が困難になる場合がある。他方、−族化合物
と同じZnS型結晶構造をもつCdTeのCdの一部を
Mnに置換したCd1-xMnxTeは大きなベルデ定数
を持つ材料で、可視光波長〜0.6μｍに対する光ア
イソレータとして有望な材料である（A.E.
Turner et.al.Applied Optics 22（1983）3152）。 However, garnet and - group compounds have different crystal structures and thermal expansion coefficients, and the integration of garnet and - group compounds tends to cause distortion in the thin film. If there is any strain in the optical isolator, the light may become elliptically polarized, making isolation difficult. On the other hand, some of the Cd in CdTe, which has the same ZnS type crystal structure as the - group compounds,
Cd 1-x Mn x Te, which is substituted with Mn, has a large Verdet constant and is a promising material as an optical isolator for visible light wavelengths up to 0.6 μm (AE
Turner et.al.Applied Optics 22 (1983) 3152).
現在、光フアイバを通しての光通信は石英系光
フイアバの透過率が高い、波長範囲が0.8〜1.5μ
ｍの光によつて行われている。長波長の光を
Cd1-xMnxTeに適した場合、ベルデ定数は10-3
°／cm・Ｇ以下に小さくなり、光アイソレータと
して有用でなくなる。そのため、ZnS型結晶構造
を有し、波長0.8〜1.5μｍの光に対して高いベル
デ定数を有する光アイソレータ用材料が必要でつ
た。 Currently, optical communication through optical fibers uses silica-based optical fibers, which have high transmittance and a wavelength range of 0.8 to 1.5μ.
This is done using light from m. long wavelength light
For Cd 1-x Mn x Te, the Verdet constant is 10 -3
It becomes smaller than °/cm·G and is no longer useful as an optical isolator. Therefore, there was a need for an optical isolator material that has a ZnS type crystal structure and a high Verdet constant for light with a wavelength of 0.8 to 1.5 μm.
本発明の目的は波長0.8〜1.5μｍの光に対する
光アイソレータとして用いるに特に有用なフアラ
デー効果を有する磁性半導体材料を提供するもの
である。本発明になる磁性半導体材料を用いるこ
とによつて、バルクの単結晶を用いた光アイソレ
ータに加えて、半導体レーザ等の光部品との一体
化を目的とする複合薄膜構造をも実視することが
出来る。
An object of the present invention is to provide a magnetic semiconductor material having a Faraday effect that is particularly useful for use as an optical isolator for light having a wavelength of 0.8 to 1.5 μm. By using the magnetic semiconductor material of the present invention, in addition to optical isolators using bulk single crystals, it is also possible to create composite thin film structures intended for integration with optical components such as semiconductor lasers. I can do it.
ベルデ定数は光の吸収端近傍で大きくなるた
め、波長0.8〜1.5μｍの光に適合する光アイソレ
ータ材料を提供するには、材料のバンドギヤツプ
エネルギは0.9〜0.6eVであることが望ましい。本
発明ではCd1-xMnxTeにHgTeを合金化させるこ
とにより、バンドキヤツプエネルギの調整を図る
とともに、ベルデ定数が大きくなる組成を見い出
した実験結果に基づいている。
Since the Verdet constant becomes large near the absorption edge of light, in order to provide an optical isolator material suitable for light with a wavelength of 0.8 to 1.5 μm, it is desirable that the bandgap energy of the material is 0.9 to 0.6 eV. The present invention is based on experimental results in which the band cap energy is adjusted by alloying Cd 1-x Mn x Te with HgTe, and a composition in which the Verdet constant becomes large is found.
また、他の光部品との一体化のために、−
族化合物半導体単結晶基板上へのエピタキシヤル
成長を行い、薄膜型光アイソレータを作製した。
−族化合物半導体結晶としては、InP，
GaAs等が代用的なものである。 In addition, for integration with other optical components, −
A thin-film optical isolator was fabricated by epitaxial growth on a group compound semiconductor single crystal substrate.
- group compound semiconductor crystals include InP,
GaAs etc. are substitutes.
まず、組成の選択について述べる。 First, the selection of composition will be described.
第２図の３元系の相図中の丸印で示した組成の
結晶をブリツジマン法で作製した。CdTe，
MnTe，HgTeをそれぞれの組成比で石英アンプ
ル中に配合し、真空封入した。加熱時に蒸気圧が
高くなるため、石英アンプルは３重にした。この
石英アンプルをたて型電気炉中に入れ、加熱溶融
後、約３時間保持したのち、石英アンプルを徐々
に降下させ、石英アンプルの低温部の一端から結
晶化させた。作製した結晶（直径10mm、長さ30
mm）は多くの場合、多結晶であつたが、結晶粒径
は数mmで光学測定に使用することができた。結晶
の長さ方向の中央部から厚さ１mmの試料を切り出
し、光の透過率を測定した。 Crystals having the compositions indicated by circles in the ternary phase diagram of FIG. 2 were produced by the Bridgeman method. CdTe,
MnTe and HgTe were mixed in a quartz ampoule at their respective composition ratios and sealed in vacuum. Since the vapor pressure increases during heating, the quartz ampoule was made in three layers. This quartz ampoule was placed in a vertical electric furnace, and after being heated and melted, it was held for about 3 hours, and then the quartz ampoule was gradually lowered to allow crystallization from one end of the low temperature part of the quartz ampoule. The prepared crystal (diameter 10 mm, length 30
mm) were often polycrystalline, but the crystal grain size was several mm and could be used for optical measurements. A sample with a thickness of 1 mm was cut from the center in the longitudinal direction of the crystal, and the light transmittance was measured.
第２図の記号７の組成はMnTeが析出し、２相
になつが、他の組成の結晶はHgxCd1-xTeと同じ
ZnS型結晶構造の単一相であつた。記号７の組成
を除く組成の試料について測定したバンドギヤツ
プエネルギの値を第３図に示す。次に各試料のベ
ルデ定数を波長0.8，1.3，1.5μｍの光で測定した。
波長0.8μｍ、1.3μｍの光に対する室温でのベルデ
定数の値をそれぞれ、第４図および第５図に示
す。単位は°／cm・Ｇである。ベルデ定数の値は
Mnの量にはあまり依存せず、バンドギヤツプエ
ネルギの大きさに強く依存した。ベルデ定数が
0.1°／cm・Ｇより小さい場合、光アイソレータを
作るために必要な厚さは1kGの磁界の下で4.5mm
になる。これは光吸収損失を大きくする原因とな
り実用的ではない。そのため、実用に供する波長
1.3μｍの光アイソレータ材料は第４および５図の
白丸で示したものである。一方、光が透過しない
試料は黒丸で示してある。 In the composition of symbol 7 in Figure 2, MnTe precipitates and becomes two phases, but crystals with other compositions are the same as Hg x Cd 1-x Te.
It was a single phase with a ZnS type crystal structure. FIG. 3 shows the bandgap energy values measured for samples with compositions other than composition 7. Next, the Verdet constant of each sample was measured using light with wavelengths of 0.8, 1.3, and 1.5 μm.
The values of the Verdet constant at room temperature for light with wavelengths of 0.8 μm and 1.3 μm are shown in FIGS. 4 and 5, respectively. The unit is °/cm・G. The value of Verdet constant is
It did not depend much on the amount of Mn, but strongly depended on the size of the bandgap energy. The Verdet constant is
If it is smaller than 0.1°/cm・G, the required thickness to make an optical isolator is 4.5mm under a magnetic field of 1kG.
become. This causes increased light absorption loss and is not practical. Therefore, the wavelength for practical use is
The 1.3 μm optical isolator material is shown as a white circle in FIGS. 4 and 5. On the other hand, samples through which no light passes are indicated by black circles.
次に波長1.5μｍの光に対するベルデ定数の値を
第６図に示す。0.1°／cm・Ｇ以上の値を有する組
成を白丸で示した。 Next, FIG. 6 shows the value of the Verdet constant for light with a wavelength of 1.5 μm. Compositions having values of 0.1°/cm·G or more are indicated by white circles.
第４図〜第６図に示した結果から、0.8〜1.5μ
ｍの光に用いられる光アイソレータを作製するに
は第７図に示される斜線の領域（境界線を含む）
の組成をもつ単結晶が適していることが分る。 From the results shown in Figures 4 to 6, 0.8 to 1.5μ
To fabricate an optical isolator used for light of m
It can be seen that a single crystal with a composition of is suitable.
以下、本発明の実施例を示す。 Examples of the present invention will be shown below.
実施例 １
Hg0.4Cd0.4Mn0.2Teの組成をもつ単結晶をブリ
ツジマン法によつて育成した。育成法は発明の概
要に述べた通りである。育成した単結晶（直径／
０mm、長さ30mm）より（110）面が端面になるよ
うに直径５mm、厚さ2.4mmの円板状の試料を作製
した。第１図に示した構造の光アイソレータを作
製し、磁場を700G印加したところ、波長1.3μｍ
のレーザ光に対して、45°のフアラデー回転が得
られ、アイソレーシヨン20dBが達成された。光
の吸収による挿入損失は1dBで光アイソレータと
して十分に使えることが明らかになつた。Example 1 A single crystal having a composition of Hg 0.4 Cd 0.4 Mn 0.2 Te was grown by the Bridgeman method. The breeding method is as described in the summary of the invention. Grown single crystal (diameter/
A disk-shaped sample with a diameter of 5 mm and a thickness of 2.4 mm was prepared so that the (110) plane was the end surface. When we fabricated an optical isolator with the structure shown in Figure 1 and applied a magnetic field of 700 G, the wavelength was 1.3 μm.
A Faraday rotation of 45° was obtained for the laser beam, and an isolation of 20 dB was achieved. It has been revealed that the insertion loss due to light absorption is 1 dB, which is sufficient for use as an optical isolator.
実施例 ２
Hg0.3Cd0.5Mn0.2Teの組成をもつ単結晶を実施
例１と同様にブリツジマを法によつて育成した。
これにより、（110）面を端面とする直径５mm、厚
さ1.25mmの円板を作製した。波長1.3μｍのレーザ
光を45°回転させるためには1.5kGの磁場を必要と
したが、光の透過率は高く、挿入損失は1.2dBで
抑えられ。その結果、光アイソレータとして十分
に使えることが確認できた。Example 2 A single crystal having a composition of Hg 0.3 Cd 0.5 Mn 0.2 Te was grown in the same manner as in Example 1 by the Buritsima method.
As a result, a disk having a diameter of 5 mm and a thickness of 1.25 mm was produced, with the (110) plane as the end face. A magnetic field of 1.5 kG was required to rotate a laser beam with a wavelength of 1.3 μm by 45 degrees, but the light transmittance was high and the insertion loss was kept to 1.2 dB. As a result, it was confirmed that it could be used satisfactorily as an optical isolator.
実施例 ３
周知の波長1.3μｍの半導体レーザ８を第８図に
示すようにInP基板９上に形成し、当該半導体レ
ーザ８をホトレジストで覆つた。その後、MBE
（分子線エピタキシイ）法でHg，Cd，Mn，Te
を同時蒸着した。各元素はクヌーセンセル（Hg，
Cd，Te）および電子ビームハース（Mn）から
同時に蒸着した。その際蒸着速度を予め測定し、
膜組成がHg0.4Cd0.4Mn0.2Teになるようにクヌー
センセルの温度と電子ビームの電流値を保持し
た。基板温度は200°、成長速度は0.3nm／ｓであ
つた。InPと（HgCdMn）Teでは格子定数に違
いがあるが、（100）InP基板上に膜はエピタキシ
ヤル成長し、膜厚5.5μｍの単結晶膜になつた。ホ
トリソグラフイとアルゴンイオンミリングにより
幅50μｍ、長さ1.6mmの薄膜型の光アイソレータ１
０を作製した。さらに金属膜を用いた偏光子を形
成した半導体レーザと光アイソレータを同一基板
上にモノリシツク化したものを磁場中に入れ、レ
ーザ発振を行わせた。その結果、導波格を形成し
ないにもかかわらず、レーザ光の入出射端面およ
び、アイソレータ中での散乱損失は少なく、挿入
損失は2dBであつた。Example 3 A well-known semiconductor laser 8 having a wavelength of 1.3 μm was formed on an InP substrate 9 as shown in FIG. 8, and the semiconductor laser 8 was covered with photoresist. Then M.B.E.
Hg, Cd, Mn, Te using (molecular beam epitaxy) method
was co-deposited. Each element is a Knudsen cell (Hg,
Cd, Te) and electron beam hearth (Mn) were simultaneously deposited. At that time, the deposition rate was measured in advance,
The temperature of the Knudsen cell and the current value of the electron beam were maintained so that the film composition was Hg 0.4 Cd 0.4 Mn 0.2 Te. The substrate temperature was 200° and the growth rate was 0.3 nm/s. Although InP and (HgCdMn)Te have different lattice constants, the film was epitaxially grown on the (100) InP substrate, resulting in a single crystal film with a thickness of 5.5 μm. Thin film optical isolator 1 with a width of 50 μm and a length of 1.6 mm made by photolithography and argon ion milling.
0 was created. Furthermore, a monolithic semiconductor laser with a polarizer formed using a metal film and an optical isolator on the same substrate were placed in a magnetic field to cause laser oscillation. As a result, even though no waveguide was formed, the scattering loss at the input/output end face of the laser beam and in the isolator was small, and the insertion loss was 2 dB.
実施例 ４
実施例３と同じプロセスに従い、GaAs基板上
に波長0.83μｍの半導体レーザを作製したのち、
Hg0.2Cd0.5Mn0.3Teの組成をもつ薄膜を同一基板
上に形成した。幅50μｍ、長さ1.6mmの島状光アイ
ソレータを加工形成した結果、0.88kGの磁場の
もとで15dBのアイソレーシヨンが達成された。
その際の挿入損失は2.5dBであつた。Example 4 Following the same process as Example 3, a semiconductor laser with a wavelength of 0.83 μm was fabricated on a GaAs substrate.
A thin film with a composition of Hg 0.2 Cd 0.5 Mn 0.3 Te was formed on the same substrate. As a result of fabricating an island-shaped optical isolator with a width of 50 μm and a length of 1.6 mm, an isolation of 15 dB was achieved under a magnetic field of 0.88 kG.
The insertion loss at that time was 2.5dB.
本発明によれば実用上有用な波長0.8〜1.5μｍ
のレーザ光に対する挿入損失が小さく、かつアイ
ソレーシヨンの優れた光アイソレータが作製でき
る。また、−族化合物半導体上にエピタキシ
ヤル成長させ、半導体レーザと光アイソレータを
一体化することができるため、光部品としての信
頼性が高くなる。すなわち、半導体レーザと光ア
イソレータの個別部品を１つの基板上に接着した
場合には、温度変動によつて各部分の距離が変化
するなどの現象が生じる。これに対して、モノリ
シツク化することによつて、これらの変動要因が
除去できる。
According to the present invention, a practically useful wavelength of 0.8 to 1.5 μm
An optical isolator with low insertion loss and excellent isolation for the laser beam can be manufactured. Further, since the semiconductor laser and the optical isolator can be integrated by epitaxial growth on the - group compound semiconductor, the reliability as an optical component is increased. That is, when individual parts such as a semiconductor laser and an optical isolator are bonded onto one substrate, phenomena such as the distance between the parts change due to temperature fluctuations occur. On the other hand, by making it monolithic, these fluctuation factors can be removed.
第１図はレーザと光アイソレータからなる光部
品の構成を示す図、第２図はHgTe−MnTe−
CaTeの３元系相図、第３図は（Hg・Mn・Cd）
Teの各試料のバンドギヤツプエネルギを示す図、
第４図は（Hg・Mn・Cd）Teの各試料の波長
0.8μｍの光に対するベルデ定数を示す図、第５図
は（Hg・Mn・Cd）Teの各試料の波長1.3μｍの
光に対するベルデ定数を示す図、第６図は
（Hg・Mn・Cd）Teの各試料の波長1.5μｍの光に
対するベルデ定数を示す図、第７図は光アイソレ
ータに適する組成範囲を示す図、第８図は半導体
レーザと光アイソレータをモノリシツク化した光
部品の構造を示す図である。
１……光アイソレータ、２……偏光子、３……
レーザ光、４……検光子、５……レーザ、６……
レーザ光、７……２相になつた組成、８……半導
体レーザ、９……InP基板、１０……光アイソレ
ータ。
Figure 1 shows the configuration of an optical component consisting of a laser and an optical isolator, and Figure 2 shows the HgTe-MnTe-
The ternary phase diagram of CaTe, Figure 3 is (Hg, Mn, Cd)
Diagram showing the bandgap energy of each sample of Te,
Figure 4 shows the wavelength of each sample of (Hg/Mn/Cd)Te.
Figure 5 shows the Verdet constant for 0.8 μm light, Figure 5 shows the Verdet constant for each sample of (Hg, Mn, Cd) Te, for light with a wavelength of 1.3 μm, Figure 6 shows (Hg, Mn, Cd) Figure 7 shows the Verdet constant for light with a wavelength of 1.5 μm for each Te sample. Figure 7 shows the composition range suitable for an optical isolator. Figure 8 shows the structure of an optical component that is a monolithic combination of a semiconductor laser and an optical isolator. It is a diagram. 1... Optical isolator, 2... Polarizer, 3...
Laser light, 4... Analyzer, 5... Laser, 6...
Laser light, 7... Two-phase composition, 8... Semiconductor laser, 9... InP substrate, 10... Optical isolator.
Claims (1)
を特徴とするフアラデー効果を有する磁性半導体
材料。 ２ 前記MnTe−HgTe−CdTe系合金は、
MnTe−HgTe−CdTe3元系相図において、
Mn0.1Hg0.2Cd0.7Te，Mn0.1Hg0.4Cd0.5Te，Mn0.3
Hg0.4Cd0.3Te，Mn0.4Hg0.2Cd0.4Te，Mn0.4Hg0.1
Cd0.5Te，Mn0.2Hg0.1Cd0.7Teの６点に囲まれる範
囲に組成にもつことを特徴とする特許請求の範囲
第１項記載の磁性半導体材料。 ３ 前記MnTe−HgTe−CdTe磁性半導体層は
−族化合物半導体基板上にエピタキシヤル成
長にて形成されたことを特徴とする特許請求の範
囲第１項又は第２項記載の磁性半導体材料。 ４ 前記−族化合物半導体基板がInP結晶よ
り成ることを特徴とする特許請求の範囲第３項記
載の磁性半導体材料。 ５ 前記−族化合物半導体基板がGaAs結晶
より成ることを特徴とする特許請求の範囲第３項
記載の磁性半導体材料。 ６ MnTe−HgTe−CdTe系合金を用いて構成
されたことを特徴とする光アイソレータ。 ７ 前記MnTe−HgTe−CdTe系合金は、
MnTe−HgTe−CdTe3元系相図において、
Mn0.1Hg0.2Cd0.7Te，Mn0.1Hg0.4Cd0.5Te，Mn0.3
Hg0.4Cd0.3Te，Mn0.4Hg0.2Cd0.4Te，Mn0.4Hg0.1
Cd0.5Te，Mn0.2Hg0.1Cd0.7Teの６点に囲まれた範
囲に組成をもつことを特徴とする特許請求の範囲
第６項記載の光アイソレータ。 ８ 前記MnTe−HgTe−CdTe磁性半導体層は
−族化合物半導体基板上にエピタキシヤル成
長にて形成されたことを特徴とする特許請求の範
囲第７項記載の光アイソレータ。 ９ 前記−族化合物半導体基板がInP結晶よ
り成ることを特徴とする特許請求の範囲第８項記
載の光アイソレータ。 １０ 前記−族化合物半導体基板がGaAs結
晶より成ることを特徴とする特許請求の範囲第８
項記載の光アイソレータ。[Claims] 1. A magnetic semiconductor material having a Faraday effect, characterized by being made of a MnTe-HgTe-CdTe alloy. 2 The MnTe-HgTe-CdTe alloy is
In the MnTe−HgTe−CdTe ternary system phase diagram,
Mn 0.1 Hg 0.2 Cd 0.7 Te, Mn 0.1 Hg 0.4 Cd 0.5 Te, Mn 0.3
Hg 0.4 Cd 0.3 Te, Mn 0.4 Hg 0.2 Cd 0.4 Te, Mn 0.4 Hg 0.1
The magnetic semiconductor material according to claim 1, characterized in that it has a composition within the range of six points: Cd 0.5 Te, Mn 0.2 Hg 0.1 Cd 0.7 Te. 3. The magnetic semiconductor material according to claim 1 or 2, wherein the MnTe-HgTe-CdTe magnetic semiconductor layer is formed by epitaxial growth on a - group compound semiconductor substrate. 4. The magnetic semiconductor material according to claim 3, wherein the - group compound semiconductor substrate is made of InP crystal. 5. The magnetic semiconductor material according to claim 3, wherein the - group compound semiconductor substrate is made of GaAs crystal. 6. An optical isolator characterized by being constructed using a MnTe-HgTe-CdTe alloy. 7 The MnTe-HgTe-CdTe alloy is
In the MnTe−HgTe−CdTe ternary system phase diagram,
Mn 0.1 Hg 0.2 Cd 0.7 Te, Mn 0.1 Hg 0.4 Cd 0.5 Te, Mn 0.3
Hg 0.4 Cd 0.3 Te, Mn 0.4 Hg 0.2 Cd 0.4 Te, Mn 0.4 Hg 0.1
The optical isolator according to claim 6, characterized in that the optical isolator has a composition within a range surrounded by six points: Cd 0.5 Te, Mn 0.2 Hg 0.1 Cd 0.7 Te. 8. The optical isolator according to claim 7, wherein the MnTe-HgTe-CdTe magnetic semiconductor layer is formed on a - group compound semiconductor substrate by epitaxial growth. 9. The optical isolator according to claim 8, wherein the - group compound semiconductor substrate is made of InP crystal. 10 Claim 8, wherein the - group compound semiconductor substrate is made of GaAs crystal.
Optical isolator as described in section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24444384A JPS61123814A (en) | 1984-11-21 | 1984-11-21 | Magnetic semiconductor material and optical isolator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24444384A JPS61123814A (en) | 1984-11-21 | 1984-11-21 | Magnetic semiconductor material and optical isolator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61123814A JPS61123814A (en) | 1986-06-11 |
| JPH0576611B2 true JPH0576611B2 (en) | 1993-10-25 |
Family
ID=17118726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24444384A Granted JPS61123814A (en) | 1984-11-21 | 1984-11-21 | Magnetic semiconductor material and optical isolator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61123814A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2679083B2 (en) * | 1988-02-26 | 1997-11-19 | 三菱瓦斯化学株式会社 | Magneto-optical garnet |
| EP0470523B1 (en) * | 1990-08-04 | 1999-01-27 | Canon Kabushiki Kaisha | Optical polarization-state converting apparatus for use as isolator, modulator and the like |
| US5245465A (en) * | 1990-08-04 | 1993-09-14 | Canon Kabushiki Kaisha | Optical polarization-state converting apparatus for use as isolator, modulator and the like |
| JP2841260B2 (en) * | 1993-01-25 | 1998-12-24 | 株式会社トーキン | Magneto-optical element |
| CA2132616C (en) * | 1993-01-25 | 1999-06-08 | Koichi Onodera | Magneto-optical element |
| JPH06222310A (en) * | 1993-01-25 | 1994-08-12 | Tokin Corp | Magneto-optical element |
| WO1995017538A1 (en) * | 1993-12-22 | 1995-06-29 | Tokin Corporation | Magneto-optical device and method for production thereof |
| US5790299A (en) * | 1995-12-15 | 1998-08-04 | Optics For Research | Optical isolator employing a cadmium-zinc-tellurium composition |
-
1984
- 1984-11-21 JP JP24444384A patent/JPS61123814A/en active Granted
Non-Patent Citations (2)
| Title |
|---|
| APPLIED OPTICS=1983 * |
| PHYS.STAT.SOL.64707=1981 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61123814A (en) | 1986-06-11 |
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