JPS63266398A - X-ray reflecting mirror - Google Patents
X-ray reflecting mirrorInfo
- Publication number
- JPS63266398A JPS63266398A JP62101346A JP10134687A JPS63266398A JP S63266398 A JPS63266398 A JP S63266398A JP 62101346 A JP62101346 A JP 62101346A JP 10134687 A JP10134687 A JP 10134687A JP S63266398 A JPS63266398 A JP S63266398A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- aluminum nitride
- layers
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 12
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 7
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 7
- 229910052762 osmium Inorganic materials 0.000 claims abstract description 6
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 6
- 239000006185 dispersion Substances 0.000 claims abstract description 5
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 5
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 239000007769 metal material Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 abstract description 18
- 229910052751 metal Inorganic materials 0.000 abstract description 17
- 239000000758 substrate Substances 0.000 abstract description 13
- 230000003287 optical effect Effects 0.000 abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910002804 graphite Inorganic materials 0.000 abstract description 6
- 239000010439 graphite Substances 0.000 abstract description 6
- 150000002739 metals Chemical class 0.000 abstract description 5
- 229910052707 ruthenium Inorganic materials 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 238000010030 laminating Methods 0.000 abstract description 4
- 229910052697 platinum Inorganic materials 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 abstract 2
- 125000006850 spacer group Chemical group 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 20
- 239000013078 crystal Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、対象波長領域が１人から２００人のＸ線光学
素子、特にＸ線反射鏡に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an X-ray optical element, particularly an X-ray reflecting mirror, whose target wavelength range is from 1 to 200 people.
本発明は、波長が１人から２００人の範囲のＸｖＡの反
射と分散を必要とする全ての分野に対して、例えば、分
光結晶、モノクロメータ、Ｘ線顕微鏡。The present invention is suitable for all fields requiring reflection and dispersion of XvA with wavelengths ranging from 1 to 200 nm, such as spectroscopic crystals, monochromators, and X-ray microscopes.
Ｘ線望遠鏡、Ｘ線リソグラフィ、あるいはＸ線を利用し
た分析計測機器などへの広範な応用を有する。It has a wide range of applications such as X-ray telescopes, X-ray lithography, and analytical measurement equipment that uses X-rays.
本発明のＸ線反射鏡においては、ガラス、シリコン、グ
ラファイトあるいは金属などの基板上に窒化アルミニウ
ムと金属層（Ｗ、 Ｈｆ、＾ｇ、 Ｐｄ、 ｌｌｈ。In the X-ray reflecting mirror of the present invention, aluminum nitride and metal layers (W, Hf, ^g, Pd, llh) are formed on a substrate made of glass, silicon, graphite, or metal.
Ｒｕ、 Ｐｔ、 Ａｕ、 Ｔａ、 Ｉｒ、 Ｏｓ、 Ｒ
ｅ、 Ｍｏの中から少なくとも一種以上の元素を含む）
とを交互に積層させることにより、形成されている。こ
のＸ線反射鏡は、結晶性の拘束を受けず、反射率を制御
することができる。また、−次および高次の反射率が向
上し、あるいは特別な用途に対しては１次の反射率を増
加させ高次の反射率を実質的にゼロにすることができる
。Ru, Pt, Au, Ta, Ir, Os, R
Contains at least one element from e, Mo)
It is formed by alternately stacking these. This X-ray reflecting mirror is not restricted by crystallinity and can control reflectance. Additionally, the negative and higher order reflectances are improved, or for special applications, the first order reflectance can be increased and the higher order reflectance can be reduced to substantially zero.
本発明は、波長が１人から２００人のＸ線頭域において
反射と分散を必要とするすべての分野に対′して、例え
ば、分光結晶、モノクロメータ、Ｘ線顕微鏡、Ｘ線望遠
鏡、Ｘ線リングラフィあるいはＸ線を利用する分析計測
機器などの分野への応用が可能である。The present invention is suitable for all fields that require reflection and dispersion in the X-ray head range with wavelengths from 1 to 200, such as spectroscopic crystals, monochromators, X-ray microscopes, X-ray telescopes, It can be applied to fields such as line phosphorography or analytical measurement equipment that uses X-rays.
本発明の対象波長領域である１人から２００人の範囲は
、使用する光学素子の面で隣接する波長領域と大きく異
なっている。すなわち、はぼ２００人を境にして、それ
より長波長側では直入射光学系が使用でき、また１人よ
り短波長の領域では結晶光学が使われている。それに対
して、その中間の１人から２００人のＸ線波長領域では
、あらゆる物質の垂直入射に対する反射率が実用上はと
んどゼロになるため、反射面にすれすれに光を入射させ
る斜入射光学系が一般に用いられている。The target wavelength range of the present invention, which is a range of 1 to 200 people, is significantly different from adjacent wavelength ranges in terms of the optical elements used. That is, a direct incidence optical system can be used for wavelengths longer than 200 people, and crystal optics is used for wavelengths shorter than 1 person. On the other hand, in the X-ray wavelength region between 1 and 200, the reflectance of all materials for normal incidence is practically zero, so oblique incidence allows the light to just barely hit the reflective surface. Optical systems are commonly used.
また、Ｘ線領域において反射特性や分散特性を有するも
のとしては、Ｌｉｄ、熱分解グラファイト。In addition, Lid and pyrolytic graphite have reflection characteristics and dispersion characteristics in the X-ray region.
ラングミュア−プロジェット膜などが知られている。Langmuir-Prodgett membranes and the like are known.
〔発明が解決しようとする問題点〕
従来の斜入射光学系を使ったものでは数１０％の高い反
射率が得られるが、細い入射ビームに対しても大面積の
光学素子が必要になるばかりでなく、結像光学系では収
差が極端に大きくなる。また、−最的に光路が長くなる
という欠点がある。[Problems to be solved by the invention] A high reflectance of several tens of percent can be obtained using a conventional oblique incidence optical system, but a large-area optical element is required even for a narrow incident beam. Instead, the aberrations in the imaging optical system become extremely large. Another drawback is that the optical path becomes longer.
ＬｉＦ、熱分解グラファイトおよびラングミュア−プロ
ジェット膜などから形成された光学素子は、格子間隔の
拘束が大きいためにＸ線の使用波長領域が狭く、使用範
囲が限定されてしまう。さらに、これらの材料は反射率
がすべて望ましい値よりも大幅に小さいという欠点があ
る。Optical elements formed from LiF, pyrolytic graphite, Langmuir-Prodgett film, etc. have a narrow lattice spacing constraint, so the X-ray wavelength range is narrow and the range of use is limited. Furthermore, these materials all suffer from a reflectance that is significantly lower than the desired value.
そこで本発明は、従来のこのような欠点を解決するため
になされたものであり、直入射でも高い反射率を有し、
使用波長範囲が広いＸｒｉ用反対反射鏡供することを目
的としている。Therefore, the present invention was made to solve these conventional drawbacks, and has a high reflectance even when directly incident on it.
The purpose is to provide a reverse reflection mirror for Xri that can be used in a wide range of wavelengths.
また直入射ばかりでなく、ビームの方向を裔い効率で直
角方向に曲げたり、偏光子やフィルタ。In addition to direct incidence, the direction of the beam can be bent at right angles, or polarizers and filters can be used.
ビームスプリフタの役割を果たす光学素子に対する要望
をも満たすことができる。The need for an optical element that plays the role of a beam splitter can also be satisfied.
上記の問題点を解決するために本発明は、窒化アルミニ
ウムと金属Ｊｉ （Ｗ、 ｌｌｆ、 Ａｇ、 Ｐｄ、
Ｒｈ、 Ｒｕ。In order to solve the above problems, the present invention combines aluminum nitride and metal Ji (W, llf, Ag, Pd,
Rh, Ru.
ＰＬ、 Ａｕ、 Ｔａ、 Ｔｒ、 Ｏｓ、 Ｒｅ、 Ｍ
ｏの中から少なくとも一種以上の元素を含む）を交互に
ｆ１１！させて形成することにより、直入射でも高い反
射率を存し、使用可能なＸ線の波長領域を１人から２０
０人までに拡大することができる。PL, Au, Ta, Tr, Os, Re, M
containing at least one element from o) alternately f11! By forming it in such a way that it has a high reflectance even at direct incidence, the wavelength range of usable X-rays can be expanded from 1 to 20
It can be expanded to 0 people.
本発明のＸ線用多層膜反射鏡は、境界面で互いに拡散せ
ず、しかも光学定数の大きく異なる２種類の物質、すな
わち窒化アルミニウムと金属を交互に蒸着し、超精密研
磨基板上に１層の厚さが数人〜数１００人の緻密な連続
膜を積層させたものである。各層対のうち金属層はＸ線
を反射する役割をもち、窒化アルミニウムの層はバッフ
ァーの役割をする。この層対を連続的に多層化すること
によって、Ｘ線は各層で多重反射し反射率を増大させる
ことができる。The multilayer reflector for X-rays of the present invention is made by alternately depositing two types of materials, aluminum nitride and metal, which do not diffuse into each other at the interface and have significantly different optical constants, and are deposited in a single layer on an ultra-precision polished substrate. It is made by laminating dense continuous films with a thickness of several to several hundred people. The metal layer of each layer pair serves to reflect X-rays, and the aluminum nitride layer serves as a buffer. By successively forming multiple layer pairs, X-rays can be reflected multiple times in each layer, increasing the reflectance.
また各層の膜厚を数人から数１００人の間の適切な値に
することによってＸ線の波長が１人から２００人の範囲
でＸ線用の反射鏡として利用することができ、反射率は
８人付近で２０％以上、１１４人では９０％以上のもの
が得られた。In addition, by setting the film thickness of each layer to an appropriate value between several people and several hundred people, it can be used as a reflector for X-rays when the wavelength of X-rays is in the range of one to 200 people, and the reflectance About 8 people achieved over 20%, and 114 people achieved over 90%.
以下本発明を実施例にもとすいて説明する。 The present invention will be explained below using examples.
本発明のＸ線反射鏡は、分子線エビクキシー法。The X-ray reflecting mirror of the present invention uses the molecular beam eclipse method.
スパッタリング法、イオンビームスパッタ法、真空蒸着
法などによって作製することができるが、ここでは膜作
製に多蒸発源の真空蒸着装置を用いましいので、タライ
オポンプを使って７ Ｘ １０−’Ｔ。It can be produced by sputtering method, ion beam sputtering method, vacuum evaporation method, etc., but here, since it is preferable to use a vacuum evaporation apparatus with multiple evaporation sources for film production, a 7×10-'T.
「ｒに保ち蒸着を行った。加熱には電子ビームを用い、
各金属（Ｗ、 Ｈｌ、 Ａｇ、 Ｐｄ、 Ｒｈ、 Ｒｕ
、 Ｐｔ、 Ａｕ。``Vapor deposition was performed while maintaining the temperature at r.An electron beam was used for heating.
Each metal (W, Hl, Ag, Pd, Rh, Ru
, Pt, Au.
Ｔａ、 Ｉｒ、 Ｏｓ＋ Ｒｅ、 Ｍｏの中から少なく
とも一種以上の元素）と窒化アルミニウムの２つの蒸着
源がそれぞれ独立に加熱される。各金属と酸化シリコン
の蒸着層の厚さは、それぞれ独立の二つのシャッターに
よって制御する。さらにプログラミング機構をもつ水晶
発振式膜厚計を用いて、金属と窒化アルミニウムとの膜
厚を設定し、二つのシャツタ−の開閉を自動的に行い規
則正しい蒸着を繰り返して行わせることによって膜厚と
層対の数を制御する。基板にはガラス、シリコンウェハ
、グラファイト、各種金属を用いた。基板の表面粗さは
１０Å以下であった。蒸着中は基板の温度が上昇しない
ように基板を水冷あるいは液体窒素で冷却した。Two evaporation sources, ie, at least one element selected from Ta, Ir, Os+Re, and Mo) and aluminum nitride, are heated independently. The thickness of each metal and silicon oxide deposited layer is controlled by two independent shutters. Furthermore, a crystal oscillation type film thickness gauge with a programming mechanism is used to set the film thickness of the metal and aluminum nitride, and the two shutters are automatically opened and closed to repeat regular vapor deposition. Control the number of layer pairs. Glass, silicon wafer, graphite, and various metals were used for the substrate. The surface roughness of the substrate was 10 Å or less. During the deposition, the substrate was cooled with water or liquid nitrogen to prevent the temperature of the substrate from rising.
第１図は本発明のＸ線反射鏡の構成図を示したものであ
る。入射ビーム１は、反射鏡の各層対の金属層３で反射
される。また一部は窒化アルミニウム層４の中で多重反
射されて反射ビーム２を構成する。FIG. 1 shows a block diagram of the X-ray reflecting mirror of the present invention. The incident beam 1 is reflected by the metal layer 3 of each layer pair of the reflector. Further, a part of the light is multiple-reflected within the aluminum nitride layer 4 to form the reflected beam 2 .
第１表は真空蒸若法で作ったｒ’ｔ−Ａｊ！Ｎ多層膜に
ついてＸ線波長が８．３４人から１１４人の範囲で測定
した反射率の値である。ｐｔと＾ｌ膜厚と層対を変化さ
せることによって各Ｘ線波長で反射率７〜６０％が得ら
れた。第１表には、ＰＬ−Ａｊ！Ｎの組合せの結果につ
いてのみを示したが、金属としてＷ、 Ｈｆ、 Ａｇ、
Ｐｄ、 Ｒｈ、 Ｒｕ、 Ｐｔ、 Ａｕ、 Ｔａ、
Ｉｒ、 Ｏｓ。Table 1 shows r't-Aj! made using the vacuum steaming method. This is the reflectance value measured for the N multilayer film at an X-ray wavelength in the range of 8.34 to 114. By varying the pt and ^l film thicknesses and layer pairs, reflectances of 7 to 60% were obtained at each X-ray wavelength. Table 1 shows PL-Aj! Only the results for the combination of N are shown, but as metals W, Hf, Ag,
Pd, Rh, Ru, Pt, Au, Ta,
Ir, Os.
Ｒｅ、 Ｍｏを用いても、あるいはこれらの金属の合金
によってもＰＬ−ＡＩＮ多層膜と同様に反射率を向上さ
せるという結果が得られた。Ｘ線波長が数人の領域では
各金属とＡｎＮとの層対の数を増やせば増やすほど反射
率が向上するという結果が得られている。しかし、現実
的には層対作製上の装置的制約や基板の平滑性などの制
約から１ｏｏｉ以上のものを作ることは困難であること
がわかった。Even when Re, Mo or an alloy of these metals was used, results were obtained in which the reflectance was improved similarly to the PL-AIN multilayer film. It has been found that in the range of several X-ray wavelengths, the reflectance improves as the number of layer pairs of each metal and AnN increases. However, in reality, it has been found that it is difficult to produce a layer with a thickness of 100 mm or more due to constraints on equipment for producing layer pairs and constraints on the smoothness of the substrate.
第２表はＷ、 ｌｌＦ、八ｇ、 Ｐｄ、 Ｒｈ、 Ｒｕ
、 Ｐｔ、 Ａｕ、 Ｔａ。Table 2 shows W, llF, 8g, Pd, Rh, Ru
, Pt, Au, Ta.
きに測定した反射率の値を示す、Ｘ線の入射角は１０°
である。それぞれの波長において各金属と八ｌＮとの組
合せによる多Ｎｒ！、反射鏡は、反射率４〜９１％の値
が得られた。The angle of incidence of the X-ray is 10°, which shows the reflectance value measured when
It is. At each wavelength, the combination of each metal and 8 lN results in a multi-Nr! The reflectance of the reflector was 4 to 91%.
第２図は、Ｐｔ−Ａｊ！Ｎの３０Ｊｉｌ多ｉ膜反射鏡に
ついてＸ線波長２３．６人での反射率の測定結果を示す
ものである。Ｘ８ｔｉＡの入射角はＯＬから２５″まで
変化させて測定した。また、ｐｔの膜厚は２３人、八Ｉ
Ｎの膜厚は４５人である。Ｘ線の波長と層対の膜厚との
関係から、特定の入射角の付近に反射率の大きくなる分
が現れる。Figure 2 shows Pt-Aj! This figure shows the results of measuring the reflectance of N's 30 Jil multi-film reflector at an X-ray wavelength of 23.6 people. The incident angle of X8tiA was varied from OL to 25'' for measurements.
The thickness of N is 45. Due to the relationship between the wavelength of the X-ray and the thickness of the layer pair, a portion where the reflectance increases appears near a specific incident angle.
以上説明したように、本発明はガラス、シリコンウェハ
、グラファイトあるいは各種金属などの基板上にＡＩＮ
層と金属層（Ｗ、 ’Ｉｆｆ、 Ａｇ、 Ｐｄ、 Ｒｈ
。As explained above, the present invention can be applied to AIN on a substrate such as glass, silicon wafer, graphite, or various metals.
layers and metal layers (W, 'Iff, Ag, Pd, Rh
.
Ｒｕ、 Ｐｔ、＾ｕ、 Ｔａ、 ｌｒ、 Ｏｓ、 Ｒｅ
、 Ｍｏの中から少なくとも一種以上の元素を含む庖）
を交互に積層させることにより形成される、Ｘ線波長１
人から２００人の範囲で使用可能な多層膜反射鏡である
。Ru, Pt, ^u, Ta, lr, Os, Re
, a bowl containing at least one element from Mo)
X-ray wavelength 1 formed by alternately laminating
This is a multilayer reflector that can be used by a range of people from 1 to 200 people.
このＸ線反射鏡は、結晶性の拘束を受けることなく、制
御された反射率を有し、１次および高次の反射率を向上
させ、あるいは特別な用途に対しては１次の反射を増加
され高次の反射を実質的にゼロにすることができる。This X-ray reflector has a controlled reflectance without crystalline constraints, improving the first and higher order reflectance, or eliminating the first order reflection for special applications. Increased higher order reflections can be reduced to virtually zero.
第１図は本発明に係わるＸ線反射鏡の構成を示す断面図
、第２図はＰｔ−ＡβＮの３０層多層膜反射鏡のＸ線波
長２３．６人での反射率の測定結果を示す説明図である
。
１・・・入射Ｘ線ビーム
２・・・反射Ｘ線ビーム
３・・・金属層
４ ・ ・ ・ 八１ＪｉＪ
５・・・基板
以上
出願人 セイコー電子工業株式会社
×筆泉Ｊ乏Ａすす？、の曹Ｔδ０図
第１図
反射率（プ）Fig. 1 is a cross-sectional view showing the configuration of the X-ray reflecting mirror according to the present invention, and Fig. 2 shows the results of measuring the reflectance of the 30-layer Pt-AβN multilayer reflecting mirror at an X-ray wavelength of 23.6 people. It is an explanatory diagram. 1... Incident X-ray beam 2... Reflected X-ray beam 3... Metal layer 4 ・ ・ ・ 81JiJ 5... Substrate and above Applicant Seiko Electronics Co., Ltd. Figure 1: Reflectance (P)
Claims (2)
の層対は対象波長領域が１Åから２００Åの波長領域で
Ｘ線分散特性を有し、各層対の一層が窒化アルミニウム
であり、また各層対の第二層は金属材料によって構成さ
れていることを特徴とするＸ線反射鏡。(1) A plurality of layer pairs are formed on top of each other, the layer pairs have X-ray dispersion properties in a target wavelength range of 1 Å to 200 Å, and one layer of each layer pair is made of aluminum nitride. An X-ray reflecting mirror characterized in that the second layer of each layer pair is made of a metal material.
、Ｐｔ、Ａｕ、Ｔａ、Ｉｒ、Ｏｓ、Ｒｅ、Ｍｏの中から
少なくとも一種以上の元素を含むことを特徴とする特許
請求の範囲第１項に記載のＸ線反射鏡。(2) The metal material layer is W, Hf, Ag, Pd, Rh, Ru
, Pt, Au, Ta, Ir, Os, Re, and Mo.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62101346A JPS63266398A (en) | 1987-04-24 | 1987-04-24 | X-ray reflecting mirror |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62101346A JPS63266398A (en) | 1987-04-24 | 1987-04-24 | X-ray reflecting mirror |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63266398A true JPS63266398A (en) | 1988-11-02 |
Family
ID=14298275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62101346A Pending JPS63266398A (en) | 1987-04-24 | 1987-04-24 | X-ray reflecting mirror |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63266398A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0597664A2 (en) * | 1992-11-12 | 1994-05-18 | Seiko Instruments Inc. | X-ray mirror and material |
-
1987
- 1987-04-24 JP JP62101346A patent/JPS63266398A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0597664A2 (en) * | 1992-11-12 | 1994-05-18 | Seiko Instruments Inc. | X-ray mirror and material |
| EP0597664A3 (en) * | 1992-11-12 | 1994-07-13 | Seiko Instr Inc | X-ray mirror and material. |
| US5454021A (en) * | 1992-11-12 | 1995-09-26 | Seiko Instruments, Inc. | X-ray mirror and material |
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