JPH01309000A - X-ray reflector - Google Patents
X-ray reflectorInfo
- Publication number
- JPH01309000A JPH01309000A JP13970688A JP13970688A JPH01309000A JP H01309000 A JPH01309000 A JP H01309000A JP 13970688 A JP13970688 A JP 13970688A JP 13970688 A JP13970688 A JP 13970688A JP H01309000 A JPH01309000 A JP H01309000A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ray
- reflectance
- vapor deposition
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 11
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 10
- 239000007769 metal material Substances 0.000 claims abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 8
- 229910052737 gold Inorganic materials 0.000 claims abstract description 7
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 6
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 6
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 6
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 5
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 4
- 239000006185 dispersion Substances 0.000 claims abstract description 4
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 229910002804 graphite Inorganic materials 0.000 abstract description 6
- 239000010439 graphite Substances 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 2
- 238000012544 monitoring process Methods 0.000 abstract description 2
- 238000005240 physical vapour deposition Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000009304 pastoral farming Methods 0.000 description 3
- 238000001015 X-ray lithography Methods 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000000560 X-ray reflectometry Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、対象波長領域が０．１八から２００ＡのＸ線
の反射率を改良したＸ線反射鏡に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an X-ray reflecting mirror with improved reflectance for X-rays in a target wavelength range of 0.18 to 200 A.
本発明は、Ｘ線波長が０．１人から２０ＯＡの範囲のＸ
線の反射と分散を必要とするほぼすべての分野に対ルて
、例えば、分光結晶、モノクロメータ、Ｘ線顕微鏡、Ｘ
線望遠鏡あるいはＸ線リソグラフィー装置など広範な応
用を有する。The present invention provides X-rays with X-ray wavelengths in the range of 0.1 to 20OA.
For almost all fields that require reflection and dispersion of radiation, e.g. spectroscopic crystals, monochromators, X-ray microscopes,
It has a wide range of applications such as ray telescopes and X-ray lithography equipment.
本発明のＸ線反射鏡においては、ガラス、シリコンある
いはグラファイトなどの基板上に炭化ケイ素（ＳｉＣ）
と金属層（Ｎｉ、Ｃｒ、Ｃｏ、Ｍｏ、、Ｐｄ、Ａｇ、Ｈ
ｆ、Ｔａ、Ｗ、Ｒｅ、Ｉ ｒ、ｐｔおよびＡｕの中から
少なくとも一種以上の元素を含む）を交互に積層させる
ことにより形成されている。このＸ線反射鏡は、結晶性
の拘束を受けず制御された反射率を有し、また１次およ
び高次波の反射率が改良され、あるいは、特別な用途に
対しては、１次の反射を増加させ、高次の反射を実質的
にゼロにすることができる。さらに、耐食性、耐熱性ま
た熱伝導性に優れた炭化ケイ素（ＳｉＣ）を層対の一方
に用いることにより、各層の安定性が改善され、また他
方の層対である金属材料との結合度合いも小さく、界面
のみだれによる散乱や吸収を最小限にすることができる
。In the X-ray reflecting mirror of the present invention, silicon carbide (SiC) is deposited on a substrate such as glass, silicon, or graphite.
and metal layers (Ni, Cr, Co, Mo, Pd, Ag, H
f, Ta, W, Re, Ir, pt, and Au). This X-ray reflector has a controlled reflectance free from crystalline constraints and has improved reflectivity for the first and higher order waves, or for special applications, Reflections can be increased and higher order reflections virtually eliminated. Furthermore, by using silicon carbide (SiC), which has excellent corrosion resistance, heat resistance, and thermal conductivity, in one of the layer pairs, the stability of each layer is improved, and the degree of bonding with the metal material of the other layer pair is also improved. It is small and can minimize scattering and absorption due to sagging at the interface.
本発明は、Ｘ線波長が０．１人から２００人の範囲のＸ
線の反射と分散を必要とするほぼ全ての分野に対して、
例えば、分光結晶、モノクロメータ、Ｘ線顕微鏡、Ｘ線
望遠鏡あるいはＸ線リソグラフィー装置など広範な応用
を有する。The present invention provides an X-ray beam with an X-ray wavelength in the range of 0.1 to 200 people.
For almost all fields that require line reflection and dispersion.
For example, it has a wide range of applications such as spectroscopic crystals, monochromators, X-ray microscopes, X-ray telescopes, and X-ray lithography equipment.
一般に、反射・分散特性を有する構造体は、ＬｉＦ、熱
分解グラファイト、ラングミューアーブロジェット（Ｌ
ａｎｕｕｉｒ−Ｂｌｏｄｅｔｔ）膜などから形成してい
る。また、Ｘ線反射率の改良、使用波長範囲の拡大ある
いは耐環境性の改良の目的で新しい結晶性材料を考案す
る試みが行なわれている。そのような試みの一つとして
、タングステンと炭素あるいはタングステンとベリリウ
ムまた、モリブデン−ケイ素などの積層膜があり、反射
率を制御することがある程度可能となった。In general, structures with reflective and dispersive properties include LiF, pyrolytic graphite, Langmuir-Blodgett (L
It is formed from a neutron-Blodett film or the like. Further, attempts are being made to devise new crystalline materials for the purpose of improving X-ray reflectance, expanding the usable wavelength range, or improving environmental resistance. One such attempt is to create a laminated film of tungsten and carbon, tungsten and beryllium, or molybdenum-silicon, and it has become possible to control the reflectance to some extent.
ＬｉＦ、熱分解グラファイトおよびラングミューアーブ
ロジェット（Ｌａｎｕｕｉｒ−８１ｏｄｕｔｔ）′ｖ４
などから形成されている物質は、格子間隔の拘束が大き
い、またラングミューアープロジェット膜は、環境の制
限が厳しく、乾燥雰囲気中でかつ、室温近傍で動作させ
なければならない、さらに、入射ビームのエネルギーが
高い場合には、分解する恐れがある。LiF, pyrolytic graphite and Langmuir-81odutt'v4
Langmuir-Projet films have severe environmental restrictions and must be operated in a dry atmosphere near room temperature. If the energy is high, there is a risk of decomposition.
これらの物質は、Ｘ線の使用波長領域が狭く、使用に対
しては限定されてしまう、また、これらの物質の反射率
は全て望ましい値よりも小さい。These materials have a narrow X-ray wavelength range, which limits their use, and the reflectance of these materials is all lower than a desirable value.
一方、Ｘ線反射率の改良、使用波長範囲の拡大あるいは
、耐環境性の改良の目的で新しい結晶性材料を考案する
試みの中の一つであるタングステンと炭素、タングステ
ンとベリリウムあるいはモリブデンとケイ素の積層膜は
、使用波長範囲が限定され、しかも層対の一方である金
属材料との結合がみられ、界面での散乱、吸収が大きく
反射率を低下させるという欠点を有している。On the other hand, tungsten and carbon, tungsten and beryllium, or molybdenum and silicon are among the attempts to devise new crystalline materials for the purpose of improving X-ray reflectivity, expanding the usable wavelength range, or improving environmental resistance. The laminated film has the disadvantage that the usable wavelength range is limited, and moreover, it is bonded to the metal material that is one of the layer pairs, and the scattering and absorption at the interface are large, reducing the reflectance.
そこで本発明は、従来のこのような欠点を解決し、Ｘ線
反射率を大幅に改良し、使用波長範囲の大きな、しかも
入射Ｘ線ビームのエネルギーが高い場合にも、使用可能
な耐環境性のすぐれたＸ線反射鏡を提供することを目的
としている。Therefore, the present invention solves these conventional drawbacks, significantly improves the X-ray reflectance, and provides environmental resistance that can be used over a wide wavelength range and when the energy of the incident X-ray beam is high. The purpose of this invention is to provide an excellent X-ray reflecting mirror.
上記の課題を解決するために、この発明は、炭化ケイ素
（ＳｉＣ）と金属層（Ｎ ｉ 、 Ｃ’ｒ、Ｃｏ、Ｍｏ
、Ｐｄ、Ａｇ、Ｈｆ、Ｔａ、Ｗ、Ｒｅ、Ｉ ｒ。In order to solve the above problems, the present invention combines silicon carbide (SiC) and metal layers (N i , C'r, Co, Mo
, Pd, Ag, Hf, Ta, W, Re, Ir.
ｐｔおよびＡｕの中から少なくとも−・種以上の元素を
含む）を交互に積層させ形成することにより、Ｘ線反射
率を増大させることを可能とすることができる。また使
用できるＸ線波長が０．１人から２００人までと範囲を
拡大することを可能とすることができる。さらに、層対
の一方に炭化ケイ素（Ｓｉｎ）を用いることにより、金
属材料との結合が非常に少ないため、界面での散乱、吸
収が小さい。The X-ray reflectance can be increased by alternately stacking layers (containing at least -. elements selected from PT and Au). Furthermore, it is possible to expand the range of usable X-ray wavelengths from 0.1 to 200 people. Furthermore, by using silicon carbide (Sin) for one of the layer pairs, there is very little bonding with the metal material, so scattering and absorption at the interface are small.
本発明のＸ線反射鏡は、スパッタリング法、真空蒸着法
、イオンビーム法、分子線エピタキシー（ＭＢＥ）法な
どの物理的蒸着法やＣＶＤなどの化学的蒸着法によって
作製される。ＮＪの大きさは、シャッターによりまた基
板を材料源に対して動かすことにより制御される。各層
の膜厚は蒸着が行なわれている場所で、膜のＸ線反射率
、電子線反射率あるいは、水晶振動子膜厚計を監視する
ことにより制御される。基板には、ガラス、ケイ素、グ
ラファイト、モリブデンを用いた。基板の表面粗さ（ｒ
ｍｓ！！ｌさ）は、ＩＯＡ以下であった。The X-ray reflecting mirror of the present invention is manufactured by a physical vapor deposition method such as a sputtering method, a vacuum evaporation method, an ion beam method, a molecular beam epitaxy (MBE) method, or a chemical vapor deposition method such as a CVD method. The magnitude of the NJ is controlled by the shutter and by moving the substrate relative to the material source. The thickness of each layer is controlled by monitoring the film's X-ray reflectance, electron beam reflectance, or quartz crystal thickness gauge at the location where the deposition is being performed. Glass, silicon, graphite, and molybdenum were used for the substrate. Surface roughness of the substrate (r
ms! ! 1) was below IOA.
以下この発明の実施例にもとづ゛いて説明する。Embodiments of the present invention will be explained below.
実施例１
膜作製には、多源の真空蒸着装置を用いた。真空度は、
できるだけ高いことが望まれるのでクライオポンプを使
って７Ｘ１０−’トールに保ち蒸着を行なった。加熱装
置には電子ビームを用い、炭化ケイ素（ＳｔＣ）とレニ
ウム（Ｒｅ）の２種類の物質が独立に加熱される。炭化
ケイ素とレニウムのそれぞれの蒸着層の厚さの制御は二
つのシャッターによって行なう、さらにプログラミング
機構をもつ水晶発振式膜厚計を用いて、炭化ケイ素とレ
ニウムの層の厚さを設定し、シャッターの開閉が自動的
に行なわれ、規則正しい蒸着が繰り返えされる。蒸着時
には、水冷あるいは冷却を行ない状態にある。各層の膜
厚には、Ｘ線回折を使った。Example 1 A multi-source vacuum evaporation apparatus was used for film production. The degree of vacuum is
Since it is desired that the temperature be as high as possible, a cryopump was used to maintain the temperature at 7 x 10-' torr for vapor deposition. An electron beam is used in the heating device, and two types of materials, silicon carbide (StC) and rhenium (Re), are independently heated. The thickness of the vapor deposited layers of silicon carbide and rhenium is controlled by two shutters.Furthermore, the thickness of the silicon carbide and rhenium layers is set using a crystal oscillation type film thickness meter with a programming mechanism, and the shutter The opening and closing are performed automatically, and regular deposition is repeated. During vapor deposition, water cooling or cooling is performed. X-ray diffraction was used to determine the thickness of each layer.
第１図は、実施例１に基ずいたＸ線反射鏡の構成図を示
したものである。入射Ｘ線１ａは反射鏡の層対によって
反射され反射Ｘ線ｌｂを構成する。FIG. 1 shows a configuration diagram of an X-ray reflecting mirror based on Example 1. The incident X-rays 1a are reflected by the layer pair of reflecting mirrors to form reflected X-rays lb.
第２図の曲線２ａは、実施例１にもとすいて作製した結
果である。斜入射角θは、ブラッグの式：％式％
ｄ：１つめ層対の厚さ
ｍ：次数
に従う。第２図の曲線２ａは、炭化ケイ素と金属材料層
にレニウムを用い、入射Ｘ線波長８．３４人、層数５０
層で作製した結果である。斜入射角１０度付近で約４０
％の反射強度が得られた。Curve 2a in FIG. 2 is the result obtained in accordance with Example 1. The oblique incidence angle θ follows Bragg's formula: % formula % d: Thickness of the first layer pair m: Order. Curve 2a in Figure 2 uses silicon carbide and rhenium for the metal material layer, the incident X-ray wavelength is 8.34, and the number of layers is 50.
This is the result of fabricating layers. Approximately 40 at grazing incidence angle of 10 degrees
% reflection intensity was obtained.
実施例２
実施例１と同様の作製および評価方評を用い、炭化ケイ
素と金属材料層にモリブデンの組み合せで行なった結果
が第２図の破線２ｂである。入射Ｘ線波長は、８．３４
Ａ、層数３０層、斜入射角を１０度付近にして層対の厚
さを設定した０反射率は約１５％が得られた。Example 2 Using the same manufacturing and evaluation method as in Example 1, a combination of silicon carbide and molybdenum in the metal material layer was used, and the broken line 2b in FIG. 2 shows the results. The incident X-ray wavelength is 8.34
A, the number of layers was 30, the grazing incidence angle was set to around 10 degrees, and the thickness of the layer pair was set, and a zero reflectance of about 15% was obtained.
ここでは、金属層がレニウムとモリブデンであるＸ線反
射鏡の効果についてのみ示したが、金属層にＮｉ、Ｃｒ
、Ｃｏ、Ｐｄ、Ａｇ、Ｈｆ、Ｔａ、Ｗ、Ｉｒ、Ｐｔおよ
びＡｕの中から少なくとも一種以上の元素を倉んだ層に
することによっても実用的な反射率を得ることができる
。また入射Ｘ線波長は８．３４Ａを用いたが、０．１Ａ
〜２００Ａの波長範囲でも、同様の斜入射角で５％〜８
０％の反射率が得られた。Here, we have only shown the effect of an X-ray reflector whose metal layer is made of rhenium and molybdenum, but
, Co, Pd, Ag, Hf, Ta, W, Ir, Pt, and Au, a practical reflectance can also be obtained by forming a layer containing at least one element selected from the group consisting of , Co, Pd, Ag, Hf, Ta, W, Ir, Pt, and Au. In addition, the incident X-ray wavelength used was 8.34A, but 0.1A
Even in the ~200A wavelength range, 5%~8 at similar grazing incidence angles.
A reflectance of 0% was obtained.
本発明は、以上説明したように、ガラス、シリコンある
いはグラファイトなどの基板上に炭化ケイ素（ＳｉＣ）
と金属層（Ｎｉ、Ｃｒ、Ｃｏ、Ｍｏ、Ｐｄ、Ａｇ、Ｉｆ
Ｓ Ｔａ、Ｗ、Ｒｅ、 Ｉ ｒ、Ｐｔ、およびＡｕ
の中から少なくても一種以上の元素を含む層）を交互に
積層させることにより形成される。このＸ線反射鏡は、
結晶性の拘束を受けず、制御された反射率を有し、また
１次および高次の反射率が改良され、あるいは特別な用
途に対しては、１次の反射を増加させ、高次波の反射を
実質的にゼロとすることができる。さらに層対の一方に
炭化ケイ素を用いることにより、各金属層と炭化ケイ素
の相互作用を阻止することができ、反射率の増大をより
正確な制御が可能となった。As explained above, the present invention provides silicon carbide (SiC) on a substrate such as glass, silicon, or graphite.
and metal layers (Ni, Cr, Co, Mo, Pd, Ag, If
S Ta, W, Re, I r, Pt, and Au
It is formed by alternately laminating layers containing at least one or more elements from the following. This X-ray reflector is
Unconstrained by crystallinity, with controlled reflectance, and with improved first and higher order reflectivity, or for special applications, increased first order reflection and higher order reflection can be reduced to virtually zero. Furthermore, by using silicon carbide in one of the layer pairs, interaction between each metal layer and silicon carbide can be prevented, making it possible to more accurately control increase in reflectance.
第１図は、本発明におけるＸ線反射鏡の構成図、第２図
は、実施例にもとすいて作製したＸ線の斜入射角と反射
率との関係を示すグラフである。
１ａ・・・入射Ｘ線ビーム
ｌｂ・・・反射Ｘ線ビーム
１Ｃ・・・金属層
１ｄ・・・炭化ケイ素（ＳｉＣ）層
θ・・・斜入射角
ｄ・・・層対の厚さ
２ａ・・・ＲｅとＳＬＣの組合わせによる反射率の結果
２ｂ・・・ＭｏとＳｉＣの組合わぜによる反射率の結果
以上
出願人 セイコー電子工業株式会社FIG. 1 is a configuration diagram of an X-ray reflecting mirror according to the present invention, and FIG. 2 is a graph showing the relationship between the oblique incidence angle of X-rays and the reflectance, which were prepared in accordance with the examples. 1a... Incident X-ray beam lb... Reflected X-ray beam 1C... Metal layer 1d... Silicon carbide (SiC) layer θ... Oblique incidence angle d... Thickness of layer pair 2a. ...Results of reflectance due to the combination of Re and SLC 2b...Results of reflectance due to the combination of Mo and SiC Applicant: Seiko Electronic Industries, Ltd.
Claims (3)
層対は対象波長領域でＸ線分散特性を有し、各層対の一
層が炭化ケイ素（ＳｉＣ）を含み、また各層対の第二層
は金属材料によって構成されていることを特徴とするＸ
線反射鏡。(1) A plurality of layer pairs are formed on top of each other, the layer pairs have X-ray dispersion properties in a wavelength region of interest, one layer of each layer pair includes silicon carbide (SiC), and each layer pair has X, characterized in that the second layer is made of a metal material.
Line reflector.
Ａｇ、Ｈｆ、Ｔａ、Ｗ、Ｒｅ、Ｉｒ、Ｐｔ、およびＡｕ
の中から少なくとも一種以上の元素を含むことを特徴と
する特許請求の範囲第１項に記載のＸ線反射鏡。(2) The metal material layer is Ni, Cr, Co, Mo, Pd,
Ag, Hf, Ta, W, Re, Ir, Pt, and Au
The X-ray reflecting mirror according to claim 1, characterized in that it contains at least one element selected from the following.
長であることを特徴とする特許請求の範囲第１項または
第２項記載のＸ線反射鏡。(3) The X-ray reflecting mirror according to claim 1 or 2, wherein the target wavelength range is an X-ray wavelength of 0.1 Å to 200 Å.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13970688A JPH01309000A (en) | 1988-06-07 | 1988-06-07 | X-ray reflector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13970688A JPH01309000A (en) | 1988-06-07 | 1988-06-07 | X-ray reflector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01309000A true JPH01309000A (en) | 1989-12-13 |
Family
ID=15251524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13970688A Pending JPH01309000A (en) | 1988-06-07 | 1988-06-07 | X-ray reflector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01309000A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0597664A2 (en) * | 1992-11-12 | 1994-05-18 | Seiko Instruments Inc. | X-ray mirror and material |
| EP2009470A1 (en) * | 2006-04-14 | 2008-12-31 | Japan Atomic Energy Agency | Multi-layer film type diffraction grating |
| CN108468029A (en) * | 2018-02-12 | 2018-08-31 | 中国科学院国家天文台南京天文光学技术研究所 | It is modified the magnetron sputtering scan method promoted with face shape for silicon carbide optical mirror plane |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6388502A (en) * | 1986-10-01 | 1988-04-19 | Canon Inc | Reflection mirror consisting of multi-layered film for soft x-ray and vacuum ultraviolet ray |
-
1988
- 1988-06-07 JP JP13970688A patent/JPH01309000A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6388502A (en) * | 1986-10-01 | 1988-04-19 | Canon Inc | Reflection mirror consisting of multi-layered film for soft x-ray and vacuum ultraviolet ray |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0597664A2 (en) * | 1992-11-12 | 1994-05-18 | Seiko Instruments Inc. | X-ray mirror and material |
| EP0597664A3 (en) * | 1992-11-12 | 1994-07-13 | Seiko Instr Inc | X-ray mirror and material. |
| US5454021A (en) * | 1992-11-12 | 1995-09-26 | Seiko Instruments, Inc. | X-ray mirror and material |
| EP2009470A1 (en) * | 2006-04-14 | 2008-12-31 | Japan Atomic Energy Agency | Multi-layer film type diffraction grating |
| EP2009470A4 (en) * | 2006-04-14 | 2011-05-18 | Japan Atomic Energy Agency | Multi-layer film type diffraction grating |
| CN108468029A (en) * | 2018-02-12 | 2018-08-31 | 中国科学院国家天文台南京天文光学技术研究所 | It is modified the magnetron sputtering scan method promoted with face shape for silicon carbide optical mirror plane |
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