JPS63266400A - Multi-layered x-ray reflecting - Google Patents

Abstract

PURPOSE: To obtain a multi-layered X-ray reflecting mirror which has high reflectivity of even the direct incident rays and has an X-ray dispersion characteristic in a wavelength region from 1Angstrom to 200Angstrom on an objective wavelength region by alternately laminating SiO2 layers and metallic layers on a substrate. CONSTITUTION:This reflecting mirror is formed by alternately laminating the SiO2 layers 4 having largely different optical constants and the metallic layers 3 contg. >=1 kinds of elements among V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, and Sb on the metallic substrate 5 consisting of glass, silicon wafer, graphite, etc. The metallic substrate 5 is the ultraprecisely polished substrate on which the dense continuous films having several Angstrom - several 100Angstrom thickness of one layer are laminated by alternate vapor deposition of SiO2 and metals. The metallic layers 3 which reflect X-ray an the SiO2 layers 4 as spacers are laminated into the multiple layers, by which the X-ray are multiple-reflected and the reflectivity is increased.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention is applicable to an X-ray optical element having a target wavelength range of 1 to 200 people, particularly an X-ray strip J! ! ! This relates to a membrane reflector.

The invention is suitable for all fields requiring reflection and dispersion of xi with wavelengths ranging from 1 to 200 nm, such as spectroscopic crystals, monochromators, 9 X-ray microscopes.

It has a wide range of applications such as X-ray telescopes, X-ray phosphorography, and analytical measurement equipment that uses X-rays.

[Summary of the invention]

In the X-ray reflecting mirror of the present invention, 5ift and a metal layer (V, Cr, Mn, Fe, Co, Ni,
Cu, Zn.

It is formed by alternately stacking a small amount of Zr, Nb, and sb (all containing one or more elements). This X-ray multilayer mirror is not restricted by crystallinity and can control reflectance.

In addition, the first and higher order reflectances are improved, or for special applications, the first order reflectance can be increased and the higher order reflectance can be reduced to substantially zero.

The present invention is suitable for all fields that require reflection and dispersion in the XwAwI range of wavelengths from 1 to 200, including spectroscopic crystals, monochromators, X-ray microscopes, X-ray telescopes, X-ray lithography, It can be applied to fields such as analytical measurement equipment that uses X-rays.

[Conventional technology]

The target wavelength range of the present invention, which is a range of 1 to 200 people, is significantly different from the adjacent wavelength 5.5 cm range in terms of the optical elements used.
On the longer wavelength side, a direct incidence optical system can be used, and 1
Crystal optics are used in the wavelength range shorter than humans. On the other hand, in the X-ray wavelength region between 1 and 200, the reflectance of all materials for normal incidence is practically zero, so the angle at which the light is incident almost on the reflective surface is An incident optical system is commonly used.

In addition, LiF and pyrolytic graphite have reflection characteristics and dispersion characteristics in the X-ray region.

Langmuir-Prodgett membranes and the like are known.

[Problem that the invention seeks to solve]

Conventional oblique-incidence optical systems can achieve high reflectance of several tens of percent, but not only do they require large-area optical elements even for narrow incident beams, but imaging optics suffer from extreme aberrations. becomes larger. Another drawback is that the optical path becomes longer.

Optical elements formed from LiF, pyrolytic graphite, Langmuir-Prodgett film, etc. have a narrow lattice spacing constraint, so the wavelength range in which XI can be used is narrow, and the range of use is limited. Furthermore, these materials all suffer from a reflectance that is significantly lower than the desired value.

Therefore, the present invention was made to solve these conventional drawbacks, and has a high reflectance even when directly incident on it.
The purpose of this invention is to provide an X-ray reflecting mirror that can be used in a wide range of wavelengths. In addition to direct incidence, it is also possible to bend the direction of the beam at right angles with high efficiency, and to satisfy the need for optical elements that play the role of polarizers, filters, and beam splitters.

[Means for solving problems]

In order to solve the above problems, the present invention combines 5iO1 and metal layers (V, Cr, Mn, Fe, Co, Ni,
Cu, Zn, Zr.

(containing at least one element selected from Nb and sb), it has a high reflectance even at direct incidence, and the wavelength range of usable X-rays is expanded to 1.
It can be expanded from 1 to 200 people.

The multi-N film reflector for X-rays of the present invention is produced by alternately depositing two types of materials, namely Sing and metal, which do not diffuse into each other at the boundary surface and have greatly different optical constants, and then deposits one material on an ultra-precision polished substrate. It is a stack of dense continuous films with a thickness of several to several hundred layers. Of each layer pair, the metal layer has a role of reflecting X-rays, and the Sing layer has a role of a spacer. By successively forming multiple layer pairs, X-rays can be reflected multiple times in each layer, increasing the reflectance.

In addition, by setting the film thickness of each layer to an appropriate value between several people and several hundred people, it can be used as a reflecting mirror for X-rays whose wavelength ranges from one person to 200 people. The rate was over 20% for around 1 person, and over 30% for 200 people.

〔Example〕

The present invention will be explained below using examples.

The X-ray multilayer film reflector of the present invention uses a molecular beam epitaxy method,
Although it can be produced by a sputtering method, an ion beam sputtering method, a vacuum evaporation method, etc., a multi-evaporation source vacuum evaporation apparatus was used for film production here. Since it is desirable that the degree of vacuum in the deposition chamber of the apparatus be as high as possible, deposition was performed while maintaining the vacuum at 7 x 10-' Torr using a Talio bomb. An electron beam is used for heating, and each metal (V, C
r, Mn, Fe, Co, Ni.

Two vapor deposition sources of a small amount (all one or more elements) of Cu, Zn, Zr, Nb, and sb and silicon oxide are heated independently. The thickness of the deposited layer of each metal and 5iO1 is controlled by two independent shutters. Furthermore, a crystal oscillation type film thickness meter with a programming mechanism is used to set the film thickness of metal and silicon oxide, and by automatically opening and closing two shutters to repeat regular vapor deposition, the film thickness and layer can be adjusted. Control the number of pairs. Glass, silicon wafer, graphite, and various metals were used for the substrate. The surface roughness of the substrate was 10 Å or less. During the deposition, the substrate was cooled with water or liquid nitrogen to prevent the temperature of the substrate from rising.

FIG. 1 shows a configuration diagram of the X-ray multilayer film reflecting mirror of the present invention. The incident X-ray beam l is reflected by the metal layer 3 of each layer pair of the reflector. Further, a part of the beam is multiple-reflected within the 5iO1 layer and constitutes the reflected Xi beam 2.

Table 1 shows reflectance values measured at X-ray wavelengths in the range of 1.5 to 200 nm for a Cr 5ift multilayer film made by vacuum evaporation. By varying the film thickness of Cr and 5ift and the number of layer pairs, reflectances of 23 to 53% were obtained at each X-ray wavelength.

Table 2 shows the Cr-Sto! of Table 1 for the Nb Sing multilayer film produced in the same manner. This shows the same reflectance measurement results as in the case of . The incident angle of X-rays was measured in the range of 5° to 356°. It has been found that almost the same reflectance values as in the case of Cr5iO1 can be obtained with Nb Stow.

Table 1 Table 2 In addition to CCr-5ta and NNb-5in, there are other metal layers.

Mn, Fe, Co, Nt, Cu, Zn, Z
Almost similar results were obtained when r, Nb and sb were used. In addition, in the area where the Xfi wavelength is 5
Results have been obtained that the reflectance improves as the number of layer pairs with t01 increases. However, in reality, due to equipment constraints in multilayer film production and constraints such as substrate smoothness,
It is difficult to make a multilayer film of 07EI or higher.

V, Cr, Mn, Fe, Co as a metal material layer
, Ni, Cu.

By making an alloy of a suitable combination of Zn, Zr, Nb and sb, the same effect as in the case of a metal layer made of only a single element can be expected.

Table 3 shows V, Mn, Fe, Co, Ni, Cu
, Zn, Zr, Nb and sb metal layers and Si
Layer vs. 36WJll with ng! The X-ray wavelength for J is 8.
It is a table showing the measured values of reflectance for 34 people and 1) 4 people. The incident angle of X-rays was measured at 10''. At each wavelength, the multilayer film obtained by combining each metal and Sing had a reflectance in the range of 12 to 67%.

Table 3 Figure 2 shows the X
This shows the results of measuring reflectance at a line wavelength of 23 and by 6 people. The measurement was performed while changing the incident angle of X-rays from 0° to 30°. In addition, the film thickness of Cu is 23, and the film thickness of 5i (h is 4
There are 6 people. (This film thickness is the value set at the time of manufacturing the multi-N film, but there is almost no difference from the actual II!I thickness measurement.) As can be seen from the figure, from total reflection when the incident angle is 0'' There is a large range of reflectance up to the oblique incidence region in the vicinity, and after that, a region where the reflectance peaks around a specific angle of incidence is observed due to the relationship between the wavelength of the X-ray and the thickness of the layer pair. Ru.

From the results shown in this figure, primary and secondary peaks can be seen in the range of incident angles from 0'' to 30''.

〔Effect of the invention〕

As explained above, the present invention provides Si0
1 layer and metal N (V, Cr, Mn, Fe, Go.

A multilayer reflector that can be used in the range of X-ray wavelengths from 1 to 200, formed by alternately stacking Ni+N containing at least one element from Cu, Zn, Zr, Nb and sbO. be. This X-ray reflector has a controlled reflectance without crystalline constraints, improving the first and higher order reflectance, or eliminating the first order reflection for special applications. can be increased to virtually eliminate higher order reflections.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing the structure of an X-ray multilayer film reflecting mirror according to the present invention, and FIG. 2 is an explanatory diagram showing the measurement results of reflectance of the Cu--SiO□ multilayer film reflecting mirror. 1... Incident X-ray beam 2... Reflected X-ray beam 3... Metal layer 4... sto, N 5... Substrate and above Applicant Seiko Electronics Co., Ltd. Figure 1 Reflectance (-〇

Claims (2)

[Claims] (1) A plurality of layer pairs are formed on top of each other, the layer pairs have X-ray dispersion properties in a wavelength range of 1 Å to 200 Å, and one layer of each layer pair is made of SiO_2. , and an X-ray multilayer film reflecting mirror characterized in that the second layer of each layer pair is made of a metal material. (2) Metal material layer is V, Cr, Mn, Fe, Co, Ni
, Cu, Zn, Zr, Nb, and Sb.