JPS63263718A - Vapor growth apparatus - Google Patents
Vapor growth apparatusInfo
- Publication number
- JPS63263718A JPS63263718A JP9914787A JP9914787A JPS63263718A JP S63263718 A JPS63263718 A JP S63263718A JP 9914787 A JP9914787 A JP 9914787A JP 9914787 A JP9914787 A JP 9914787A JP S63263718 A JPS63263718 A JP S63263718A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- vapor
- vapor phase
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 238000005192 partition Methods 0.000 claims abstract description 14
- 238000001947 vapour-phase growth Methods 0.000 claims description 31
- 238000011144 upstream manufacturing Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 11
- 230000008021 deposition Effects 0.000 abstract description 2
- 230000001473 noxious effect Effects 0.000 abstract 2
- 238000000638 solvent extraction Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 88
- 239000002994 raw material Substances 0.000 description 13
- 239000007795 chemical reaction product Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 101100215641 Aeromonas salmonicida ash3 gene Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は気相成長ガスを基板面と平行に流して成膜基板
を得る気相成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a vapor phase growth apparatus for producing a film-formed substrate by flowing a vapor phase growth gas parallel to the substrate surface.
前記成膜基板は気相成長ガス中の原料ガスが熱化学反応
し反応生成物が基板面に堆積し【成長膜を形成すること
によって得られる。この場合、本発明における気相成長
ガスとは少なくとも１種類の原料ガスを１」？（水素）
、Ｈｅ（ヘリウム）。The film-forming substrate is obtained by thermochemical reaction of raw material gas in a vapor-phase growth gas and reaction products depositing on the substrate surface to form a grown film. In this case, the vapor phase growth gas in the present invention refers to at least one type of raw material gas. (hydrogen)
, He (helium).
Ａｒ（アルゴンリ）、Ｎ２（窒素）等の稀釈ガスで稀釈
したガスであり、また、原料ガスとは気相成長反応に寄
与する個々の成分ガスで、たとえばＳ！ｔ−１４（シラ
ン）、ＡＳｆ−１３（アルシン）、ＴＭＧ（１−リメチ
ルガリウム）蒸気簀である。It is a gas diluted with a diluent gas such as Ar (argon gas) or N2 (nitrogen), and the raw material gas is an individual component gas that contributes to a vapor phase growth reaction, such as S! t-14 (silane), ASf-13 (arsine), TMG (1-limethylgallium) vapor tank.
原料ガスは目的に応じ単独で、または混合して使１ｎさ
れ、例えばＧａＡｓ （ガリウムヒ素）基板にＧａＡＳ
Ｍｕを形成するとぎは、ΔＳＨ３とＴＭＧ蒸気の両原料
ガスをト１２で稀釈した気相成長ガスを用いる。以下、
図面を用いて従来の気相成長装置の一例を説明する。Raw material gases are used singly or in combination depending on the purpose.
To form Mu, a vapor phase growth gas obtained by diluting both source gases ΔSH3 and TMG vapor with T12 is used. below,
An example of a conventional vapor phase growth apparatus will be explained using the drawings.
第３図は従来の気相成長装置の断面図で、１は筒状の反
応管である。反応管１は、一端に気相成長ガス導入管２
を、他端にガス排出管３を有すると共に、内部に保持台
（サビブタ）４が設【プられ、該保持台４の気相成長ガ
ス導入管２側には気相成長ガスの流れを円滑にするため
のフローチャンネル５が設【ノられている。なお、６は
反応管１の外周に設けたＲＦコイルである。FIG. 3 is a sectional view of a conventional vapor phase growth apparatus, in which 1 is a cylindrical reaction tube. The reaction tube 1 has a vapor growth gas introduction tube 2 at one end.
has a gas exhaust pipe 3 at the other end, and a holding stand (sabibuta) 4 is installed inside, and the holding stand 4 has a vapor phase growth gas introduction pipe 2 side that facilitates the flow of the vapor growth gas. A flow channel 5 is provided for this purpose. Note that 6 is an RF coil provided on the outer periphery of the reaction tube 1.
このように構成された従来装置に３３いて、未処理の基
板７を保持第４に載せた後、ＲＦコイル６により保持台
４を加熱し、該保持台４を介して基。In the conventional apparatus 33 configured as described above, after placing the unprocessed substrate 7 on the holder 4, the holder 4 is heated by the RF coil 6, and the substrate is heated through the holder 4.
板７を所定の高温に保持すると共に、気相成長ガス導入
管２から反応管１内に気相成長ガスを導入する。この操
作によって気相成長ガスは反応管１内を基板７面と平行
に流れ、基板７近傍の高温部で熱分解して反応生成物が
基板７面上に堆積し成長膜が形成される。While the plate 7 is maintained at a predetermined high temperature, a vapor growth gas is introduced into the reaction tube 1 from the vapor growth gas introduction pipe 2. By this operation, the vapor growth gas flows in the reaction tube 1 parallel to the surface of the substrate 7, and is thermally decomposed at a high temperature part near the substrate 7, and reaction products are deposited on the surface of the substrate 7 to form a grown film.
しかし、前記従来装置では成長膜が均一の＋＜さになら
ず、良好な成ｌｌＮ基板が得られない欠点があった。こ
れは気相成長ガス中の原料ガスが反応生成物となって基
板７而に次々に堆積し減少してもより上層の気相成長ガ
スからの原料ガスの補給が問に合わず、このため基板７
面上に流れる気相成長ガス中の原料ガスが流れに沿って
減少する濃度分布となり、この結梁、基板７面の成長膜
が上流で厚く、下流で薄く形成されるためである。また
、気相成長ガスは基板７近傍の高温部で熱分解して堆積
するので基板７の上流側にも堆積物８（以下、有害堆積
物８という）がＭｌｌ？％し、該有害堆積物８はその表
面が剥離して気相成長ガスに同搬して基板７面上の成長
膜に付着し欠陥を生じさゼる。そしてこれは有害堆積物
８の伍が多い程増加する。However, the conventional apparatus has the disadvantage that the grown film is not uniform and that a good IIN substrate cannot be obtained. This is because the source gas in the vapor phase growth gas becomes a reaction product and is deposited one after another on the substrate 7, and even if it decreases, there is no problem in replenishing the source gas from the vapor phase growth gas in the upper layer. Board 7
This is because the concentration distribution of the raw material gas in the vapor growth gas flowing on the surface decreases along the flow, and the growth film on the bonded beam and the surface of the substrate 7 is formed to be thick on the upstream side and thin on the downstream side. Furthermore, since the vapor growth gas is thermally decomposed and deposited in a high temperature area near the substrate 7, deposits 8 (hereinafter referred to as harmful deposits 8) are also deposited on the upstream side of the substrate 7. %, the surface of the harmful deposits 8 is peeled off, carried along with the vapor growth gas, and attached to the grown film on the surface of the substrate 7, causing defects. And this increases as the number of harmful deposits 8 increases.
そこで通常は気相成長処理をバッチ式で繰り返しながら
成長膜の欠陥率、を調べ、該欠陥率が所定以上の割合に
なったら気相成長処理を中断し反応管１内を清帰し、前
記有害堆積物８を除去しているが、前記従来装置では有
害堆積物の量が多いため頻繁な清掃が不可欠であり生産
性が悪かった。Therefore, normally, the defect rate of the grown film is checked while repeating the vapor phase growth process in a batch manner, and when the defect rate reaches a predetermined rate or higher, the vapor phase growth process is stopped, the inside of the reaction tube 1 is cleaned, and the Although the deposits 8 are removed, the conventional apparatus has a large amount of harmful deposits, so frequent cleaning is essential, resulting in poor productivity.
そこで、これらの不都合に対して基板を気相成長ガスの
流れ方向に対して傾けた状態で気相成長する方法が提案
されている。この方法によれば、基板面に形成される成
長膜の厚さを気相成長ガスの流れ方向に均一にすること
ができるが気相成長ガスは層流状態で流れるので中心部
の流速が速くなり気相成長ガスの流れと垂直な方向では
中心部が厚く、周辺部が湧くなり均一の厚さにはならな
い。また、前記の如く基板を傾けると、基板を自動的に
保持台上に移載するための基板搬送機構が複雑になる不
都合を新たに生ずる他、本方法によっても前記有毒Ｍｔ
積物は減少せず生産性は改善されない。Therefore, in order to overcome these disadvantages, a method has been proposed in which vapor phase growth is performed with the substrate tilted with respect to the flow direction of the vapor phase growth gas. According to this method, the thickness of the grown film formed on the substrate surface can be made uniform in the flow direction of the vapor growth gas, but since the vapor growth gas flows in a laminar flow state, the flow velocity in the center is faster. In the direction perpendicular to the flow of the vapor growth gas, the center part is thick and the peripheral part is thick and the thickness is not uniform. In addition, when the substrate is tilted as described above, the substrate transport mechanism for automatically transferring the substrate onto the holding table becomes complicated, and this method also causes the above-mentioned toxic Mt.
The amount of cargo is not reduced and productivity is not improved.
また、更に別の方法として、前記第３図の保持台４を水
平方向に回転する方法が提案されている。Furthermore, as yet another method, a method has been proposed in which the holding table 4 shown in FIG. 3 is rotated in the horizontal direction.
この方法によれば、成長膜は均一の厚さにできるものの
、別途回転機構を要し装置構成が複雑になるだけでなく
、本方法によっても前記有害堆積物は減少せず生産性は
改善されない。Although this method allows the grown film to have a uniform thickness, it not only requires a separate rotation mechanism and complicates the equipment configuration, but also does not reduce the harmful deposits and does not improve productivity. .
Ｃ問題点を解決するための手段〕
本発明は前記不都合に鑑みてなされたもので、均一な成
長膜を形成し得ると共に、基板より上流での前記有害堆
積物の聞を減少して生産性を向上させた気相成長装置を
提供することを目的とし、その特徴とするところは、気
相成長ガス流路を形成する反応管内の基板面より上流を
仕切板により該基板面と平行に区画して平行流路を形成
し、該平行流路の基板面側流路に介在ガス導入管を、他
の流路に気相成長ガス導入管をそれぞれ連設したことに
ある。Means for Solving Problem C] The present invention was made in view of the above-mentioned disadvantages, and it is possible to form a uniformly grown film and to reduce the amount of harmful deposits upstream of the substrate, thereby improving productivity. The purpose is to provide a vapor phase growth apparatus with improved performance, and its feature is that the upstream side of the substrate surface in the reaction tube forming the vapor phase growth gas flow path is partitioned parallel to the substrate surface by a partition plate. This is because a parallel flow path is formed, and an intervening gas introduction tube is connected to the substrate surface side flow path of the parallel flow path, and a vapor growth gas introduction tube is connected to the other flow path.
以下、本発明の一実施例を図面を用いて説明す、る。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明に係る気相成長Ｖｉｔ置の断面図、第２
図１．Ｌ第１図のＩ−４断面図で、図中前記第３図と同
一構成部分には同一記号を付しである。FIG. 1 is a cross-sectional view of a vapor phase growth Vit apparatus according to the present invention, and FIG.
Figure 1. L This is a sectional view taken along line I-4 in FIG. 1, in which the same components as those in FIG. 3 are given the same symbols.
図にＪ３いて、１０は反応管１内の基板７より上流を基
板７面と平行に区画する仕切板で、該仕切板７により平
行流路が形成され、該）Ｖ行流路の基板側流路には介在
ガス導入管１１が、他方の流路には気相成長ガス導入管
１２がそれぞれ連設されている。他の構成は前記第３図
と同じである。仕切板１０は基板７に達しない艮ざの板
状物Ｔ：基板側端部１０ａは第２図の如く半円状に膨出
しだ形状となっている。At J3 in the figure, 10 is a partition plate that partitions the upstream side of the substrate 7 in the reaction tube 1 parallel to the surface of the substrate 7, and the partition plate 7 forms a parallel flow path, and the substrate side of the V-line flow path. An intervening gas introduction pipe 11 is connected to one flow path, and a vapor growth gas introduction pipe 12 is connected to the other flow path. The other configurations are the same as in FIG. 3 above. The partition plate 10 is a plate-like object T that does not reach the substrate 7: the substrate side end 10a has a semicircular bulge shape as shown in FIG.
前記の如く構成された本発明装置は、基板７を所定の温
度に保持すると共に、介在ガス導入管１１に介在ガスを
、気相成長ガス導入管１２に気相成長ガスをそれぞれ導
入して使用する。この場合、介在ガスとしては稀釈ガス
または、これに９邑の揮発抑制ガスを添加したものを用
いる。揮発抑制ガスとは基板７を構成する物質のうち熱
により揮発する成分の揮発を抑制するためのガスであり
、例えばＧａＡＳ基板の場合はＡＳの揮発を防止するた
めＡＳＨ３を抑制ガスとして少吊流す。The apparatus of the present invention configured as described above is used by holding the substrate 7 at a predetermined temperature and introducing the intervening gas into the intervening gas introduction pipe 11 and the vapor growth gas into the vapor growth gas introduction pipe 12, respectively. do. In this case, the intervening gas is a diluent gas or a diluent gas to which a volatization suppressing gas is added. The volatilization suppressing gas is a gas for suppressing the volatilization of components that evaporate due to heat among the substances constituting the substrate 7. For example, in the case of a GaAS substrate, a small amount of ASH3 is flowed as a suppressing gas in order to prevent the volatilization of AS. .
前記の如く、平行流路を別々に流れる気相成長ガスと介
在ガスは仕切板１０の端部１０ａを過ぎた優は相Ｕに拡
散しながら基板７に向って流れ、このため介在ガスは原
料ガス濃度を徐々に高めながら基板７面に接近づるが、
基板７面通過時は、前記相互拡散作用により気相成長ガ
ス中の原才３１ガスが引き続き介在ガス中に入ってくる
と共に、該介在ガス中の原料ガスは反応生成物となって
次々に基板７面に堆積する。従って介在ガス、気相成長
ガスの流速、気相成長ガス中の原着１ガスｆｊＩ度を適
宜調節することにより、気相成長ガスから介在ガスに流
入する原料ガス吊と基板７面への堆積により介在ガスか
ら消失する原料ガス併とを単位時周当りでバランスする
ことができ、これによって基板７面通過時の介在ガス中
の原料ガスを流れ方向に均一なｉｌ［ｆ分布として均一
な膜厚の成長膜を形成でき良好な成膜基板を得ることが
できる。As mentioned above, the vapor growth gas and the intervening gas flowing separately through the parallel flow paths flow toward the substrate 7 while passing through the end 10a of the partition plate 10 and diffusing into the phase U, so that the intervening gas flows toward the substrate 7. It approaches the 7th surface of the substrate while gradually increasing the gas concentration,
When passing through the substrate 7 surface, the original 31 gas in the vapor phase growth gas continues to enter the intervening gas due to the mutual diffusion effect, and the raw material gas in the intervening gas becomes a reaction product and passes through the substrate one after another. Deposits on 7 sides. Therefore, by appropriately adjusting the flow rate of the intervening gas, the vapor growth gas, and the degree of doping 1 gas fjI in the vapor growth gas, the flow of the raw material gas from the vapor growth gas into the intervening gas and the deposition on the substrate 7 surface can be controlled. This makes it possible to balance the amount of raw material gas that disappears from the intervening gas per unit time cycle, and as a result, the raw material gas in the intervening gas when passing through the surface of the substrate 7 can be distributed in a uniform film with a uniform il[f distribution in the flow direction. A thick growth film can be formed and a good film-forming substrate can be obtained.
また、前記介在ガスはその原料ガスｍ度が気相成長ガス
より薄い状態で基板７の上流部分を流れるので、気相成
長ガスがそのまま接触する従来装δに比べ有害ｊ１を積
物８の聞が減少し、これに伴って清掃回数も減少するの
で生産性が向上する。In addition, since the intervening gas flows through the upstream portion of the substrate 7 in a state where the raw material gas m is thinner than that of the vapor growth gas, the harmful j1 is reduced compared to the conventional system δ in which the vapor growth gas comes into direct contact with the substrate 8. This reduces the number of times cleaning is required, which improves productivity.
以上の如く、仕切板を設けることにより成長膜の膜厚を
流れ方向に均一化できるが、仕切板１０の基板側端部１
０ａを第２図の半円形状の如く仕切板１０の長手方向に
沿って膨出する形状に形成寸ればより均一な膜厚とする
ことができる。即ち、通常、介在ガスは反応管１内を層
流で流ずので流速分布が中心部で速く、周辺部で遅くな
り、このため成長膜が流速の速い部分では厚く、遅い部
分では薄くなるが、前記端部１０ａの半円形状により介
在ガスと気相成長ガスの相互拡散の開始を中心部が周辺
部より遅れるよう調整でき、これにより前記基板側端部
１０ａ通過後の介在ガス中の原料ガスの濃度分布を第２
図１３ａ、１３ｂ、１３Ｃの如くすると、介在ガスの流
速分布は破線表示した１４の如くなるので基板７面上に
おりる介在ガスの流速が速い部分では原料ガスの濃度を
薄く、また、介在ガスの流速が遅い部分で（ユ原料ガス
の濃度を瀧くすることができ、成長膜を介在ガスの流れ
方向に対し垂直な方向で均一なｊ９さとすることができ
、前記流れ方向の均一化ど（１１−ｔ！はぼ全面を均一
にでき極めて良好な成膜基板を得ることができる。なお
、前記実施例では一枚の基板を処理する装置の場合で説
明したが、複数枚の基板を同時に処理１Ｊる装置にも応
用できることは言う迄もなく、バレル型の気相成長装置
に用いてム好適である。As described above, by providing the partition plate, the thickness of the grown film can be made uniform in the flow direction.
A more uniform film thickness can be achieved by forming Oa into a shape that bulges along the longitudinal direction of the partition plate 10, such as the semicircular shape shown in FIG. That is, normally, the intervening gas does not flow in the reaction tube 1 in a laminar flow, so the flow velocity distribution is fast in the center and slow in the periphery, so that the grown film is thick in areas where the flow rate is high and thin in areas where it is slow. Due to the semicircular shape of the end portion 10a, the start of interdiffusion between the intervening gas and the vapor growth gas can be adjusted so that the center portion is delayed from the peripheral portion, and as a result, the raw material in the intervening gas after passing through the substrate side end portion 10a can be adjusted. The second gas concentration distribution
13a, 13b, and 13C, the flow velocity distribution of the intervening gas becomes as shown in 14 indicated by a broken line, so the concentration of the raw material gas is reduced in the portion where the intervening gas flowing on the surface of the substrate 7 has a high flow velocity, and the intervening gas In the part where the flow rate is slow, the concentration of the raw material gas can be lowered, and the grown film can be made to have a uniform j9 in the direction perpendicular to the flow direction of the intervening gas. (11-t! It is possible to obtain a very good film-forming substrate by making the entire surface uniform.In addition, in the above embodiment, the explanation was given for the case of an apparatus for processing one substrate, but for processing multiple substrates. Needless to say, the present invention can be applied to a device capable of processing 1J at the same time, and is suitable for use in a barrel-type vapor phase growth device.
以上の如く、本発明装置は介在ガスを介して気相成長を
行なうよう構成したので、
（１）基板面に形成する成長膜の厚さを気相成長ガスの
流れ方向に対して均一にするに際し基板を保持台上に水
平に載置したまま実施できるので基板を傾ける従来法に
比べ基板搬送機構が簡単になり、また保持台を回転する
従来法に比べても保持台を回転する機構が不要なので装
置構成が簡素になる。As described above, since the apparatus of the present invention is configured to perform vapor phase growth via an intervening gas, (1) the thickness of the grown film formed on the substrate surface is made uniform in the flow direction of the vapor phase growth gas; Since the substrate can be placed horizontally on the holding table during the process, the substrate transport mechanism is simpler compared to the conventional method of tilting the substrate, and the mechanism for rotating the holding table is simpler than the conventional method of rotating the holding table. Since this is not necessary, the device configuration is simplified.
（２） また仕切板の基板側端部を適宜膨出して形成
すれば気相成長ガスの流れと垂直な方向にお【ノる成長
膜の厚さを均一化でき、前記（１）の効果と併せほぼ全
面にわたって成長膜の厚さを均一化することができる。(2) In addition, if the end of the partition plate on the substrate side is formed with an appropriate bulge, the thickness of the grown film can be made uniform in the direction perpendicular to the flow of the vapor growth gas, resulting in the effect of (1) above. In addition, the thickness of the grown film can be made uniform over almost the entire surface.
そしてこれは、保持台を回転させて全面を均一な膜厚と
する従来法に、比べ保持台回転機構を要せずして実現で
きる点が特長的である。This method is unique in that it can be achieved without requiring a holder rotation mechanism, compared to the conventional method in which the holder is rotated to provide a uniform film thickness over the entire surface.
（３） 更に特に本発明装置では、気相成長時におけ
る基板の上流側での有害堆積を従来より減少することが
できるので清掃回数が減少し生産性が向−ヒするので経
済的である。(3) Furthermore, in particular, the apparatus of the present invention can reduce harmful deposits on the upstream side of the substrate during vapor phase growth compared to conventional apparatuses, thereby reducing the number of times of cleaning and improving productivity, making it economical.
第１図は本発明の気相成長装置の一実施例を示す断面図
、第２図は第１図のｆｆ−ＩＩ所面図、第３図は従来の
気相成長装ｄの断面図である。
１・・・反応管 ３・・・排出管 ４・・・保持台
５・・・フローチャンネル ６・・・ＦＲコイル７・
・・基板 ８・・・有害堆積物 １０・・・仕切板
１１・・・介在ガス導入管 １２・・・気相成長ガス
導入管Fig. 1 is a sectional view showing an embodiment of the vapor phase growth apparatus of the present invention, Fig. 2 is a cross-sectional view of ff-II in Fig. 1, and Fig. 3 is a sectional view of a conventional vapor phase growth apparatus d. be. 1... Reaction tube 3... Discharge pipe 4... Holding stand 5... Flow channel 6... FR coil 7.
... Substrate 8 ... Harmful deposits 10 ... Partition plate 11 ... Intervening gas introduction pipe 12 ... Vapor phase growth gas introduction pipe
Claims (1)
た基板面と平行に流して該基板面に成長膜を形成する気
相成長装置において、気相成長ガス流路を形成する反応
管内の基板面より上流を仕切板により該基板面と平行に
区画して平行流路を形成し、該平行流路の基板面側流路
に介在ガス導入管を、他の流路に気相成長ガス導入管を
それぞれ連設したことを特徴とする気相成長装置。 ２、前記仕切板が基板側端部で長手方向に沿つて中央部
が膨出する形状に形成されてなることを特徴とする特許
請求の範囲第１項に記載の気相成長装置。[Claims] 1. In a vapor phase growth apparatus that forms a grown film on a substrate surface by flowing a vapor phase growth gas parallel to the surface of a substrate placed on a holder provided in a reaction tube, The upstream side of the substrate surface in the reaction tube forming the gas flow path is divided parallel to the substrate surface by a partition plate to form a parallel flow path, and an intervening gas introduction pipe is provided in the flow path on the substrate surface side of the parallel flow path. A vapor phase growth apparatus characterized in that vapor phase growth gas introduction pipes are connected to each of the other channels. 2. The vapor phase growth apparatus according to claim 1, wherein the partition plate is formed in such a shape that a central portion thereof bulges along the longitudinal direction at an end portion on the substrate side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62099147A JPH0727868B2 (en) | 1987-04-22 | 1987-04-22 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62099147A JPH0727868B2 (en) | 1987-04-22 | 1987-04-22 | Vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63263718A true JPS63263718A (en) | 1988-10-31 |
| JPH0727868B2 JPH0727868B2 (en) | 1995-03-29 |
Family
ID=14239581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62099147A Expired - Fee Related JPH0727868B2 (en) | 1987-04-22 | 1987-04-22 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0727868B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011192768A (en) * | 2010-03-15 | 2011-09-29 | Mitsui Eng & Shipbuild Co Ltd | Atomic layer deposition device and atomic layer deposition method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100272752B1 (en) * | 1996-03-22 | 2001-05-02 | 쓰치야 히로오 | Vapor phase growth apparatus and vapor phase growth method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52143599A (en) * | 1976-05-24 | 1977-11-30 | Nippon Eaatetsuku Kk | Device for removing chemical dusts for use in wrapping machine |
-
1987
- 1987-04-22 JP JP62099147A patent/JPH0727868B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52143599A (en) * | 1976-05-24 | 1977-11-30 | Nippon Eaatetsuku Kk | Device for removing chemical dusts for use in wrapping machine |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011192768A (en) * | 2010-03-15 | 2011-09-29 | Mitsui Eng & Shipbuild Co Ltd | Atomic layer deposition device and atomic layer deposition method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0727868B2 (en) | 1995-03-29 |
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