JPS63261769A - Manufacture of superconducting device - Google Patents
Manufacture of superconducting deviceInfo
- Publication number
- JPS63261769A JPS63261769A JP62095856A JP9585687A JPS63261769A JP S63261769 A JPS63261769 A JP S63261769A JP 62095856 A JP62095856 A JP 62095856A JP 9585687 A JP9585687 A JP 9585687A JP S63261769 A JPS63261769 A JP S63261769A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- film
- ceramic
- oxide
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 29
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000919 ceramic Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000002950 deficient Effects 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 20
- 239000007787 solid Substances 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 239000007790 solid phase Substances 0.000 abstract description 3
- 239000007858 starting material Substances 0.000 abstract description 2
- 238000001771 vacuum deposition Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 21
- 238000002161 passivation Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000011224 oxide ceramic Substances 0.000 description 3
- 229910052574 oxide ceramic Inorganic materials 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Chemical group 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- AAOVKJBEBIDNHE-UHFFFAOYSA-N diazepam Chemical compound N=1CC(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 AAOVKJBEBIDNHE-UHFFFAOYSA-N 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical group [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229940072690 valium Drugs 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【発明の詳細な説明】
「発明の利用分野」
本発明はセラミックス系超電導材料を用いた固体素子（
ディバイス）の作製方法に関する。[Detailed Description of the Invention] "Field of Application of the Invention" The present invention relates to a solid-state device (
device).
本発明は、酸化物超電導材料の表面を用いるディバイス
において、特に重要な表面近傍の物性の改良を施し、表
面利用型素子の高信頼性化を図らんとするものである。The present invention aims to improve the particularly important physical properties near the surface of a device using the surface of an oxide superconducting material, thereby increasing the reliability of the surface-based element.
「従来の技術」
最近、セラミックス系超電導材料が注目されている。こ
れは１８Ｍチューリッヒ研究所においてなされたＢａ−
Ｌａ−Ｃｕ−０系の酸化物超電導材料の開発にその端を
発している。これに加えて、イットリューム系の超電導
セラミックスも知られ、液体窒素温度での固体電子ディ
バイスの応用の可能性が明らかになった。"Prior Art" Ceramic superconducting materials have recently attracted attention. This was done at the 18M Zurich Institute.
Its origins lie in the development of La-Cu-0-based oxide superconducting materials. In addition, yttrium-based superconducting ceramics have become known, and their potential for application in solid-state electronic devices at liquid nitrogen temperatures has become clear.
他方、ＮＡ、Ｇｅ等の金属署用いた超電導材料がこれま
でによく知られている。そしてこの金属の超電導材料を
用いて、ジョセフソン素子等の固体電子ディバイスを構
成させる試みがなされている。On the other hand, superconducting materials using metals such as NA and Ge are well known. Attempts have been made to construct solid-state electronic devices such as Josephson elements using this metallic superconducting material.
この金属を用いたジョセフソン素子は士数年の研究によ
りほぼ実用化が近くなった。しかし、この超電導体はＴ
ｃｏ（電気抵抗が零となる温度）が２３にときわめて低
く、液体へリュームを用いなければならず、実用性は十
分ではない。A Josephson element using this metal was almost ready for practical use after several years of research. However, this superconductor has T
co (temperature at which electrical resistance becomes zero) is extremely low at 23, requiring the use of liquid helium, and is not sufficiently practical.
この金属の超電導材料においては、材料のすべてが金属
であるため、その材料の成分を表面においても、また内
部（バルク）においてもまったく均一に作ることができ
る。In this metallic superconducting material, since all of the material is metal, the components of the material can be made completely uniform both on the surface and in the interior (bulk).
「従来の問題点」
しかし、最近注目されている酸化物セラミックスの超電
導材料は、その特性を調べていくと、表面およびその近
傍（表面より概略２００人までの深さ）が内部（バルク
）に比べて特性の劣化（信頼性の低下）がおきることが
わかった。``Conventional Problems'' However, when examining the properties of oxide ceramic superconducting materials, which have been attracting attention recently, it has been found that the surface and its vicinity (approximately 200 mm deep from the surface) are internal (bulk). It was found that the characteristics deteriorated (reliability decreased) compared to the conventional method.
その原因として、酸化物セラミックスにおける酸素が表
面近傍においてはきわめて容易に脱気してしまうことが
実験的に確かめることができた。It was experimentally confirmed that the cause of this is that oxygen in the oxide ceramic is extremely easily degassed near the surface.
この酸素が理想状態にあるかまたは不足状態にあるかは
、その材料にとって、超電導特性を有するかまたは単に
常電導特性を有するにすぎない、との根本的な問題を提
供することが判明した。It has been found that whether this oxygen is ideal or deficient presents a fundamental problem for the material, which has superconducting properties or only normal conducting properties.
本発明はこのため、この酸化物セラミックスの表面また
は表面近傍においても、超電導特性を有せしめるべく、
その表面にブロッキング用の被膜（パッシベイション用
液膜）を形成するとともに、その内側の酸素欠乏型にな
りやすいセラミックス中に酸素を添加し、表面近傍にお
いても内部と同様に超電導特性を有せしめんとする方法
を提供せんとするものである。Therefore, the present invention aims to provide superconducting properties to the surface or near the surface of this oxide ceramic.
A blocking film (passivation liquid film) is formed on the surface, and oxygen is added to the ceramic inside which tends to be oxygen-deficient, so that the near surface has the same superconducting properties as the inside. The aim is to provide a method for doing so.
「問題を解決する手段」
本発明は、超電導性セラミックスの表面に被膜を形成し
、これをより完全なブロッキング層とするとともに、こ
の被膜を金属または半導体においては酸化し、絶縁膜に
変成する。さらにこの被膜の酸素を固相−固相拡散（固
体の被膜から他の固体であるセラミックス中べの酸素の
拡散）を行わしめることにより、表面またはその近傍、
一般には約２００人の深さまでの領域の酸素濃度を適性
にせんとするものである。"Means for Solving the Problem" The present invention forms a film on the surface of a superconducting ceramic to make it a more complete blocking layer, and oxidizes the film in the case of a metal or semiconductor to transform it into an insulating film. Furthermore, by performing solid phase-solid phase diffusion (diffusion of oxygen from the solid coating into another solid ceramic), the oxygen on the surface or near the surface,
Generally, the aim is to optimize the oxygen concentration in a region up to a depth of about 200 people.
このために用いる被膜は、酸化アルミニューム、酸化タ
ンタル、酸化チタン等の酸化物絶縁膜であってもよい。The film used for this purpose may be an oxide insulating film of aluminum oxide, tantalum oxide, titanium oxide, or the like.
またこの被膜としては、酸化処理後、酸化物絶縁膜にな
る金属または半導体をも用い得る。即ち金属にあっては
、アルミニューム、チタン、タンタル、銅、バリューム
、イットリューム、また半導体にあってはシリコンまた
はゲルマニュームである。これらは酸化により酸化アル
ミニューム、酸化チタン、酸化タンタル、酸化銅、酸化
バリューム、酸化イットリュームとすることができる。Further, as this film, a metal or a semiconductor which becomes an oxide insulating film after oxidation treatment can also be used. That is, metals include aluminum, titanium, tantalum, copper, valium, and yttrium, and semiconductors include silicon and germanium. These can be converted into aluminum oxide, titanium oxide, tantalum oxide, copper oxide, barium oxide, and yttrium oxide by oxidation.
またシリコンは酸化珪素に、ゲルマニュームは酸化ゲル
マニュームとし得る。Further, silicon may be replaced with silicon oxide, and germanium may be replaced with germanium oxide.
本発明では、スクリーン印刷法、スパッタ法、ＭＢＢ
（モレキュラ・ビーム・エピタキシャル）法、ＣＶＤ（
気相反応）法等を用いて超電導材料を形成させる。この
１例として、（Ａ＋−ｘ Ｂｘ）ｙｃｕｚｏｗ、ｘ ＝
０〜１． ｙ ＝２．０〜４．０好ましくは２．５〜
３．５． Ｚ ＝ １〜４好ましくは１．５〜３．５．
Ｗ＝４〜１０好ましくは６〜８を有する。ＡはＹ（イッ
トリューム）、Ｇｕ（ガドリニューム）、Ｙｂ（イフテ
ルビューム）、Ｅｕ（ユーロピューム）、Ｔｂ（テルビ
ューム）、Ｄｙ（ジスプロシューム）、Ｈｏ（ホルミウ
ム）、Ｅｒ（エルビウム）、Ｔｍ（ツリウム）、Ｌｕ（
ルテチウム）、Ｓｃ（スカンジウム）またはその他の元
素周期表Ｕａ族の１つまたは複数種類より選ばれる。Ｂ
はＲａ（ラジューム）、Ｂａ（バリューム）、Ｓｒ（ス
トロンチューム）、Ｃａ（カルシューム）、Ｍｇ（マグ
ネシューム）、Ｂｅ（ベリリューム）の元素周期表Ｕａ
族より選ばれる。特にその具体例として（ＹＢａｚ）Ｃ
ｕ：ｒｏｂ〜８を用いた。またＡとして元素周期表にお
ける前記した元素以外のランタニド元素またはアクチニ
ド元素を用い得る。In the present invention, screen printing method, sputtering method, MBB
(molecular beam epitaxial) method, CVD (
A superconducting material is formed using a gas phase reaction method or the like. An example of this is (A+-x Bx)ycuzow, x =
0-1. y = 2.0~4.0 preferably 2.5~
3.5. Z = 1-4, preferably 1.5-3.5.
W=4 to 10, preferably 6 to 8. A is Y (yttrium), Gu (gadolinium), Yb (ifterbium), Eu (europium), Tb (terbium), Dy (dysprosium), Ho (holmium), Er (erbium), Tm (thulium), Lu (
lutetium), Sc (scandium), or one or more of the other elements in group Ua of the periodic table. B
is the periodic table of elements Ua of Ra (radium), Ba (valume), Sr (strontium), Ca (calcium), Mg (magnesium), Be (beryllium)
chosen from the tribe. In particular, as a specific example, (YBaz)C
u: rob~8 was used. Further, as A, a lanthanide element or an actinide element other than the above-mentioned elements in the periodic table of elements can be used.
本発明においては、この酸化熱処理により形成された絶
縁膜を５〜５０人のトンネル電流を流し得る厚さとする
と、この絶縁膜の上面に他の超電導材料を配設してジョ
フソン素子を構成せしめ得る。In the present invention, if the insulating film formed by this oxidation heat treatment is made thick enough to allow the tunneling current of 5 to 50 people to flow, another superconducting material can be disposed on the top surface of this insulating film to form a Joffson element. .
またパッシベイション用被膜として１００〜３０００人
の厚さとして、劣化防止用被膜ともし得る。It can also be used as a passivation film with a thickness of 100 to 3,000 thick, and as a deterioration prevention film.
即ち、被膜を超電導セラミックス上に形成した後、これ
らを空気または酸素中に４００〜１０００℃例えば６０
０℃に加熱処理を１〜１００時間例えば５時間施すこと
により、この被膜を完全な絶縁膜とし得る。さらにかか
る高温においては、この絶縁膜の酸素がセラミックス中
に拡散（固相−固相拡散）し、この表面またはその近傍
の酸素欠乏状態に対し酸素を供給し、この表面またはそ
の近傍においても超電導特性を十分保持し得る。その結
果、液体窒素温度に保持した際、この表面の酸素濃度も
理想状態を保持し得る。即ちパッシベイションフィルム
を作り得る。That is, after coatings are formed on superconducting ceramics, they are heated in air or oxygen at 400 to 1000°C, e.g. 60°C.
By performing a heat treatment at 0° C. for 1 to 100 hours, for example, 5 hours, this film can be made into a complete insulating film. Furthermore, at such high temperatures, the oxygen in this insulating film diffuses into the ceramic (solid phase-solid phase diffusion), supplies oxygen to the oxygen-deficient state at or near this surface, and superconducting also occurs at or near this surface. Characteristics can be sufficiently maintained. As a result, when the temperature is maintained at liquid nitrogen temperature, the oxygen concentration on this surface can also be maintained at an ideal state. That is, a passivation film can be made.
「作用」
かくすることにより、これまで酸化物超電導セラミック
スの表面近傍で原因不明で超電導状態が消えてしまうと
いう信頼性低下問題がなくなり、長期間安定に表面の超
電導状態を有効利用することができるようになった。``Operation'' This eliminates the problem of reduced reliability, where the superconducting state disappears for unknown reasons near the surface of oxide superconducting ceramics, and the superconducting state on the surface can be used effectively and stably for a long period of time. It became so.
その結果、この表面を用いるディバイス特にジョセフソ
ン素子を長期間安定して高信頼性を有して動作させるこ
とができるようになった。As a result, it has become possible to operate devices using this surface, particularly Josephson elements, stably and with high reliability for a long period of time.
以下に図面に従って本発明を説明する。The present invention will be explained below with reference to the drawings.
「実施例１」
第１図は本発明の実施例の製造工程およびそれに関する
酸素濃度分布の相対特性を示す。"Example 1" FIG. 1 shows the manufacturing process of an example of the present invention and the relative characteristics of the oxygen concentration distribution related thereto.
第１図（Ａ）は超電導セラミックス、例えばＹＢａ ｚ
Ｃｕ３０６〜８である。銅の成分は３またはそれ以下に
なり得る。かかる超電導性セラミックスをタブレットま
たは薄膜上に単結晶または多結晶構造を有して形成し、
出発材料（第１図（Ａ）（１））とした。Figure 1 (A) shows superconducting ceramics, such as YBaz
Cu306-8. The copper content can be 3 or less. Forming such superconducting ceramics on a tablet or thin film with a single crystal or polycrystalline structure,
This was used as a starting material (Fig. 1 (A) (1)).
これを真空装置に保持し、雰囲気を真空引きすると、そ
の表面近傍（１゛）の酸素が脱気し、概略２００人まで
の範囲の電気特性に劣化がおきてしまう。If this is held in a vacuum device and the atmosphere is evacuated, the oxygen near the surface (1°) will be degassed, causing deterioration in the electrical characteristics of the area up to about 200 people.
即ち、第１図（Ａ）と対応した酸素濃度を第１図（Ｄ）
に示す。図面において、領域（１）は正常の酸素濃度を
有する。また領域（１゛）は不足の領域を示す。この深
さは超電導材料の種類、構造、緻密さにもよるが、５０
〜１０００人、°一般には約２００ 人程度である。That is, the oxygen concentration corresponding to FIG. 1(A) is shown in FIG. 1(D).
Shown below. In the figure, region (1) has normal oxygen concentration. Further, the area (1゛) indicates an insufficient area. This depth depends on the type, structure, and density of the superconducting material, but
~1000 people, °generally about 200 people.
これらの上面にアルミニューム（２）を真空蒸着法で３
０人の厚さに形成した。3. Aluminum (2) is applied to the top surface of these by vacuum evaporation method.
It was formed to a thickness of 0 people.
さらにこれら全体を酸素中で４００〜１０００℃、例え
ば６００°Ｃで加熱処理を１〜１００時間例えば５時間
行った。この加熱処理は減圧状態ではなく、大気圧また
は加圧状態が好ましい。Further, the whole was heat-treated in oxygen at 400 to 1000°C, for example, 600°C, for 1 to 100 hours, for example, 5 hours. This heat treatment is preferably performed under atmospheric pressure or under increased pressure, rather than under reduced pressure.
かかる酸化雰囲気での加熱処理を長時間行うことにより
、この金属（２）は酸化され、酸化アルミニューム（３
）に変成する。さらに酸化アルミニューム中より酸素が
超電導材料中に拡散する。その結果、第１図（Ｅ）に示
す如く、内部と酸素の濃度が同じとすることができた。By performing heat treatment in such an oxidizing atmosphere for a long time, this metal (2) is oxidized and becomes aluminum oxide (3).
) is transformed into. Furthermore, oxygen diffuses into the superconducting material from the aluminum oxide. As a result, as shown in FIG. 1(E), it was possible to make the concentration of oxygen the same as that inside.
この実施例で作られた試料を加熱状態より取り出し、再
び真空中に保存してみた。するとこのプロッキンク層（
３）により超電導材料の表面または近傍において、酸素
が欠乏することがなく、高信頼性の素子を作ることがで
きた。The sample made in this example was removed from the heated state and stored again in a vacuum. Then this Prockink layer (
3), it was possible to produce a highly reliable device without oxygen deficiency on or near the surface of the superconducting material.
この絶縁膜はパッシベイション膜としてきわめて有効で
あった。This insulating film was extremely effective as a passivation film.
「効果」
本発明に示す如く、酸化物超電導体を作製し、その表面
にパッシベイション膜を形成し、さらにそれを緻密化ま
たは酸化絶縁化することにより、この膜をより完全な状
態にすると同時に、それに密接した超電導材料の改質を
行う方法は、その製造工程をより簡単にできるため、き
わめて有効であった。"Effect" As shown in the present invention, by producing an oxide superconductor, forming a passivation film on its surface, and further densifying it or making it oxidized and insulated, this film can be made into a more perfect state. At the same time, the method of modifying superconducting materials closely related to superconducting materials was extremely effective because the manufacturing process could be simplified.
本発明において、超電導性セラミックスという言葉を用
いた。しかしこれは超電導材料が酸化物であることによ
る。その結晶構造は多結晶であっても、また単結晶であ
ってもよいことは、本発明の技術思想において明らかで
ある。特に単結晶構造の場合には、超電導材料を用いる
に際し、基板上にエピタキシアル成長をさせればよい。In the present invention, the term superconducting ceramics is used. However, this is due to the fact that the superconducting material is an oxide. It is clear from the technical concept of the present invention that the crystal structure may be polycrystalline or single crystalline. In particular, in the case of a single crystal structure, when using a superconducting material, epitaxial growth may be performed on the substrate.
第１図は本発明の作製方法および不純物濃度を示す。 （Ａ） （Ｃン （１”） 訛（１コ FIG. 1 shows the manufacturing method and impurity concentration of the present invention. (A) (C-n (1”) Accent (1)
Claims (1)
と、これら全体を酸化性雰囲気で熱処理を施し酸素を添
加することにより前記被膜下の前記セラミックス上部の
酸素欠乏状態を除去することを特徴とする超電導装置の
作製方法。 ２、特許請求の範囲第１項において、被膜として絶縁膜
を形成することを特徴とする超電導装置の作製方法。 ３、特許請求の範囲第１項において、被膜として酸化後
絶縁物となる金属または半導体を形成することを特徴と
する超電導装置の作製方法。 ４、特許請求の範囲第２項において、絶縁膜は酸化アル
ミニューム、酸化珪素、酸化チタンまたは酸化タンタル
よりなることを特徴とする超電導装置の作製方法。 ５、特許請求の範囲第３項において、金属または半導体
はアルミニューム、チタン、タンタル、銅、バリューム
、イットリュームまたはシリコンよりなることを特徴と
する超電導装置の作製方法。[Claims] 1. Step of forming a film on the upper surface of the superconducting ceramic, and removing the oxygen-deficient state in the upper part of the ceramic under the film by heat-treating the entire film in an oxidizing atmosphere and adding oxygen. A method for manufacturing a superconducting device characterized by: 2. A method for manufacturing a superconducting device according to claim 1, characterized in that an insulating film is formed as a coating. 3. A method for manufacturing a superconducting device according to claim 1, characterized in that a metal or semiconductor that becomes an insulator after oxidation is formed as a coating. 4. A method for manufacturing a superconducting device according to claim 2, wherein the insulating film is made of aluminum oxide, silicon oxide, titanium oxide, or tantalum oxide. 5. A method for manufacturing a superconducting device according to claim 3, wherein the metal or semiconductor is made of aluminum, titanium, tantalum, copper, barium, yttrium, or silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62095856A JPS63261769A (en) | 1987-04-18 | 1987-04-18 | Manufacture of superconducting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62095856A JPS63261769A (en) | 1987-04-18 | 1987-04-18 | Manufacture of superconducting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63261769A true JPS63261769A (en) | 1988-10-28 |
| JPH0577313B2 JPH0577313B2 (en) | 1993-10-26 |
Family
ID=14149010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62095856A Granted JPS63261769A (en) | 1987-04-18 | 1987-04-18 | Manufacture of superconducting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63261769A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6410512A (en) * | 1987-07-01 | 1989-01-13 | Matsushita Electric Ind Co Ltd | Superconductor structure |
| WO1990006286A1 (en) * | 1988-12-05 | 1990-06-14 | Massachusetts Institute Of Technology | Methods for processing superconducting materials |
| EP0484010A2 (en) * | 1990-11-01 | 1992-05-06 | Hughes Aircraft Company | Passivation of thin film oxide super-conductors |
| US5166131A (en) * | 1988-12-05 | 1992-11-24 | Massachusetts Institute Of Technology | Methods for processing superconducting materials |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6047478A (en) * | 1983-08-26 | 1985-03-14 | Hitachi Ltd | Josephson junction element |
| JPS60250682A (en) * | 1984-05-28 | 1985-12-11 | Hitachi Ltd | Superconductive element |
| JPS61181178A (en) * | 1985-02-06 | 1986-08-13 | Rikagaku Kenkyusho | Josephson junction element and manufacture thereof |
| JPS61206279A (en) * | 1985-03-11 | 1986-09-12 | Hitachi Ltd | Superconductive element |
-
1987
- 1987-04-18 JP JP62095856A patent/JPS63261769A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6047478A (en) * | 1983-08-26 | 1985-03-14 | Hitachi Ltd | Josephson junction element |
| JPS60250682A (en) * | 1984-05-28 | 1985-12-11 | Hitachi Ltd | Superconductive element |
| JPS61181178A (en) * | 1985-02-06 | 1986-08-13 | Rikagaku Kenkyusho | Josephson junction element and manufacture thereof |
| JPS61206279A (en) * | 1985-03-11 | 1986-09-12 | Hitachi Ltd | Superconductive element |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6410512A (en) * | 1987-07-01 | 1989-01-13 | Matsushita Electric Ind Co Ltd | Superconductor structure |
| JPH07106895B2 (en) * | 1987-07-01 | 1995-11-15 | 松下電器産業株式会社 | Superconductor structure |
| WO1990006286A1 (en) * | 1988-12-05 | 1990-06-14 | Massachusetts Institute Of Technology | Methods for processing superconducting materials |
| US5166131A (en) * | 1988-12-05 | 1992-11-24 | Massachusetts Institute Of Technology | Methods for processing superconducting materials |
| EP0484010A2 (en) * | 1990-11-01 | 1992-05-06 | Hughes Aircraft Company | Passivation of thin film oxide super-conductors |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0577313B2 (en) | 1993-10-26 |
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