JPS63260058A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS63260058A JPS63260058A JP9435487A JP9435487A JPS63260058A JP S63260058 A JPS63260058 A JP S63260058A JP 9435487 A JP9435487 A JP 9435487A JP 9435487 A JP9435487 A JP 9435487A JP S63260058 A JPS63260058 A JP S63260058A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- wiring
- leads
- carrier tape
- wiring leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000011347 resin Substances 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000011889 copper foil Substances 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 238000009434 installation Methods 0.000 claims description 3
- 239000011295 pitch Substances 0.000 abstract description 7
- 239000004033 plastic Substances 0.000 abstract description 3
- 238000000465 moulding Methods 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 238000010137 moulding (plastic) Methods 0.000 description 2
- 239000000088 plastic resin Substances 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造方法に関し、特にプラスナッ
クモールドにより樹脂封止された半導体装置の製造方法
に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device sealed with resin by plastic nac molding.
従来、この種の半導体装置の製造方法には、プラスチッ
クモールド組立があり、鉄・ニッケル合金からなるリー
ドフレーム上に半導体チップを搭載しボンディング法等
によりリードと電極とが接続されプラスチック樹脂によ
りモールド封止していた。Traditionally, the manufacturing method for this type of semiconductor device involves plastic mold assembly, in which a semiconductor chip is mounted on a lead frame made of iron-nickel alloy, leads and electrodes are connected by bonding, etc., and then molded and sealed with plastic resin. It had stopped.
、上述した従来の半導体装置の製造方法は、リードフレ
ームの加工、取扱い及び運搬の際にリードのピッチずれ
やリードの変形を起しゃすくなるので、リードのピッチ
は0.65mm程度が最小となっており、半導体装置の
多端子化及び小型化の妨げになるという欠点がある。In the conventional semiconductor device manufacturing method described above, the lead pitch is likely to be misaligned or deformed during processing, handling, and transportation of the lead frame, so the minimum lead pitch is about 0.65 mm. This has the disadvantage that it hinders the increase in the number of terminals and miniaturization of semiconductor devices.
本発明の半導体装置の製造方法は、耐熱性のキャリヤテ
ープ上に設けた半導体チップ設置領域に対応する切抜部
の所定の辺に接する領域に銅箔を接着する工程と、前記
銅箔不要部を除去して所定の配線リードのパターンを形
成する工程と、前記切抜部に半導体チップを載置し前記
配線リードと前記半導体チップの電極とを一括接続する
工程と、前記配線リードの先端部を残し前記半導体チッ
プと前記配線リードの一部とを覆って樹脂封止する工程
とを含んで構成される。The method for manufacturing a semiconductor device of the present invention includes the steps of bonding copper foil to a region in contact with a predetermined side of a cutout corresponding to a semiconductor chip installation region provided on a heat-resistant carrier tape, and removing the unnecessary portion of the copper foil. a step of removing a semiconductor chip to form a predetermined wiring lead pattern; a step of placing a semiconductor chip in the cutout and collectively connecting the wiring leads and the electrodes of the semiconductor chip; and a step of leaving the tip of the wiring lead. The method includes a step of covering and sealing the semiconductor chip and a portion of the wiring leads with a resin.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図(a>及び(b)はそれぞれ本発明の一実施例を
用いて製造される半導体装置の平面図及びA−A’線断
面図である。FIGS. 1A and 1B are a plan view and a cross-sectional view taken along line A-A' of a semiconductor device manufactured using an embodiment of the present invention, respectively.
第1図に示すように、半導体装置は耐熱性のキャリヤテ
ープ1と、キャリヤテープ1上に形成された所定のパタ
ーンをもつ配線リード2とキャリヤテープ1に設けられ
た切抜部3に配置される半導体チップ6と、配線リード
2の一部を含み半導体チップ6を封止するプラスチック
の樹脂7とを含んで構成される。As shown in FIG. 1, a semiconductor device is arranged in a heat-resistant carrier tape 1, wiring leads 2 formed on the carrier tape 1 with a predetermined pattern, and cutouts 3 provided in the carrier tape 1. It is configured to include a semiconductor chip 6 and a plastic resin 7 that includes a part of the wiring leads 2 and seals the semiconductor chip 6.
次に、第2図は第1図のキャリヤテープの平面図である
。Next, FIG. 2 is a plan view of the carrier tape of FIG. 1.
第2図に示すように、実装する半導体チップ6の設置領
域に切抜部3を有するポリイミド等の耐熱性のキャリヤ
テープ1の切抜部3の周辺の裏面側に厚さ約30μmの
銅箔を取付け、その銅箔をホトエツチング法等の微細加
工技術により、例えば幅100μm程度のパターンで必
要な任意の配線リード2を形成する。As shown in FIG. 2, a copper foil with a thickness of about 30 μm is attached to the back side around the cutout 3 of a heat-resistant carrier tape 1 made of polyimide or the like, which has a cutout 3 in the installation area of the semiconductor chip 6 to be mounted. The copper foil is then subjected to a microfabrication technique such as photoetching to form any necessary wiring leads 2 in a pattern with a width of, for example, about 100 μm.
配線リード2はプリント板へ収付けの際のはんだ付は性
を考tMして、金めつき又ははんだめっきの処理をして
もよい。The wiring leads 2 may be gold-plated or solder-plated, taking into account soldering performance when mounting them on a printed circuit board.
キャリヤテープ1の形状及び切抜部3,4の形状は半導
体チップに合せて設けられる。The shape of the carrier tape 1 and the shapes of the cutouts 3 and 4 are provided to match the semiconductor chip.
次に、キャリヤテープ1の切抜部3に裏面側から半導体
チップ6を当て、配線リード2と半へ9体チップ6の電
極パッドとをバンブ法(’1’ A )3法)笠により
一括して配線接続する。Next, the semiconductor chip 6 is applied to the cutout 3 of the carrier tape 1 from the back side, and the wiring leads 2 and the electrode pads of the half-shaped chip 6 are bundled together using a bump method ('1' A) 3 method). Connect the wiring.
次に、金型を°用いるプラスチックモールド成型法によ
り半導体チップ6を配線リード2の一部を含んで樹脂7
で、第1図に示すように、絶縁封止する。Next, by a plastic molding method using a metal mold, the semiconductor chip 6 is molded into a resin 7 including a part of the wiring leads 2.
Then, as shown in FIG. 1, it is insulated and sealed.
更に、キャリヤテープ1の2点鎖線で示す領域をパレス
加工により切断分離し、配線リード2の樹脂7から出た
部分を曲げ加工して、第1図に示す半導体装置が得られ
る。Further, the area indicated by the two-dot chain line of the carrier tape 1 is cut and separated by paring, and the portion of the wiring lead 2 exposed from the resin 7 is bent, thereby obtaining the semiconductor device shown in FIG.
以上説明したように本発明は、フレキシブル性をもつテ
ープ状のフィルム上に配線リードを形成し、半導体チッ
プとのリード接続を一括して行い、プラスチックモール
ド成型法で樹脂封止することにより、配線幅及び配線間
ピッチの小さい多数本の配線を有する半導体装置の配線
リードのピッチずれの発生を防止できるという効果がる
。As explained above, the present invention forms wiring leads on a flexible tape-like film, connects the leads to the semiconductor chip all at once, and seals the wiring with resin using a plastic molding method. This has the effect of preventing pitch deviation of wiring leads in a semiconductor device having a large number of wirings with small widths and pitches between wirings.
第1図(a)及び(b)は本発明の一実施例を用いて製
造される半導体装置の平面図及び八−A′線断面図、第
2図は第1図のキャリヤテープの平面図である。
1・・・キャリヤテープ、2・・・配線リード、3,4
・・・切抜部、6・・・半導体チップ、7・・・樹脂。1(a) and (b) are a plan view and a sectional view taken along line 8-A' of a semiconductor device manufactured using an embodiment of the present invention, and FIG. 2 is a plan view of the carrier tape shown in FIG. 1. It is. 1...Carrier tape, 2...Wiring lead, 3, 4
...Cutout part, 6...Semiconductor chip, 7...Resin.
Claims (1)
領域に対応する切抜部の所定の辺に接する領域に銅箔を
接着する工程と、前記銅箔の不要部を除去して所定の配
線リードのパターンを形成する工程と、前記切抜部に半
導体チップを載置し前記配線リードと前記半導体チップ
の電極とを一括接続する工程と、前記配線リードの先端
部を残し前記半導体チップと前記配線リードの一部とを
覆って樹脂封止する工程とを含むことを特徴とする半導
体装置の製造方法。A process of bonding copper foil to an area touching a predetermined side of a cutout corresponding to a semiconductor chip installation area provided on a heat-resistant carrier tape, and removing an unnecessary portion of the copper foil to form a predetermined wiring lead pattern. a step of placing a semiconductor chip in the cutout and connecting the wiring leads and the electrodes of the semiconductor chip together; and a step of connecting the semiconductor chip and the wiring leads, leaving the tips of the wiring leads. 1. A method for manufacturing a semiconductor device, comprising the step of covering and sealing with a resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9435487A JPS63260058A (en) | 1987-04-16 | 1987-04-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9435487A JPS63260058A (en) | 1987-04-16 | 1987-04-16 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63260058A true JPS63260058A (en) | 1988-10-27 |
Family
ID=14107951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9435487A Pending JPS63260058A (en) | 1987-04-16 | 1987-04-16 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63260058A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61242051A (en) * | 1985-04-19 | 1986-10-28 | Matsushita Electronics Corp | Lead frame |
-
1987
- 1987-04-16 JP JP9435487A patent/JPS63260058A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61242051A (en) * | 1985-04-19 | 1986-10-28 | Matsushita Electronics Corp | Lead frame |
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