JPS6325912A - Ceramic capacitor - Google Patents
Ceramic capacitorInfo
- Publication number
- JPS6325912A JPS6325912A JP61169103A JP16910386A JPS6325912A JP S6325912 A JPS6325912 A JP S6325912A JP 61169103 A JP61169103 A JP 61169103A JP 16910386 A JP16910386 A JP 16910386A JP S6325912 A JPS6325912 A JP S6325912A
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- ceramic sintered
- pzt
- ceramic
- ceramic capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003985 ceramic capacitor Substances 0.000 title claims description 9
- 239000000919 ceramic Substances 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はセラミックコンデンサに関する。[Detailed description of the invention] [Industrial application field] The present invention relates to ceramic capacitors.
従来技術を図を用いて説明する。 The conventional technology will be explained using figures.
第2図(ah (b)に従来のセラミ・ンクコンデン
サを示す、第2図(a)は断面図、第2図(b)は第2
図(a)のB部拡大図である。セラミック焼結体2から
なる誘電体に一対の焼付は電極1が設けられている。Figure 2 (ah) shows a conventional ceramic capacitor, Figure 2 (a) is a cross-sectional view, and Figure 2 (b) shows a
It is an enlarged view of part B in figure (a). A pair of baked electrodes 1 are provided on a dielectric body made of a ceramic sintered body 2.
単一円板型のセラミックコンデンサでは、電極間が平行
になるように、本焼成済のセラミック焼結体を平行研磨
したのち、銀ペーストを塗布して電気炉にて電極を焼付
ける。また、積層セラミックコンデンサでは、仮焼成済
の誘電体をブレードで薄いシートにし、このシートに金
属ペーストを塗布したものを何層か積み重ねて電気炉に
入れて、本焼成と電極焼付けとを同時に行なう。In a single disk type ceramic capacitor, the fired ceramic sintered body is parallel-polished so that the electrodes are parallel to each other, then silver paste is applied and the electrodes are fired in an electric furnace. In addition, in multilayer ceramic capacitors, the pre-fired dielectric is made into a thin sheet using a blade, this sheet is coated with metal paste, then stacked in several layers and placed in an electric furnace to perform main firing and electrode baking at the same time. .
上述した従来のセラミックコンデンサでは、電極を焼付
ける際に電極の成分がセラミック焼結体の結晶粒界に沿
って拡散してしまい、誘電損失が設計値よりも増加する
という欠点があった。The above-described conventional ceramic capacitors had a drawback in that when the electrodes were baked, the components of the electrodes diffused along the grain boundaries of the ceramic sintered body, resulting in an increase in dielectric loss compared to the designed value.
本発明のセラミックコンデンサは、焼付は電極とセラミ
ック焼結体との間に、結晶粒界を遷移元素酸化物で埋め
た他のセラミック焼結体が介在しているものである。In the ceramic capacitor of the present invention, another ceramic sintered body whose crystal grain boundaries are filled with a transition element oxide is interposed between the baked electrode and the ceramic sintered body.
次に、本発明の実施例について図ぽを参照して説明する
。Next, embodiments of the present invention will be described with reference to figures.
第1図(a>は本発明の一実施例の断面図、第2図(b
)は第1図(a)のA部拡大図である。Figure 1 (a> is a sectional view of an embodiment of the present invention, Figure 2 (b)
) is an enlarged view of part A in FIG. 1(a).
この実施例は、焼付は電極1とPZTからなる厚さ50
0〜700μmのセラミック焼結体2との間に、結晶粒
界をMn酸化物で埋めた厚さ50〜100μmの他のセ
ラミック焼結体3が介在しているものである。PZT
(Pb (Ti xZrl−x)○s、o<x<1)で
Xが0.4から0.6付近の組成では、キュリー点が3
00℃ぐらいであり、室温付近の比誘電率は1000程
度である。In this example, the baking is made of electrode 1 and PZT with a thickness of 50 mm.
A ceramic sintered body 3 having a thickness of 50 to 100 μm and having crystal grain boundaries filled with Mn oxide is interposed between the ceramic sintered body 2 having a thickness of 0 to 700 μm. PZT
(Pb (Ti xZrl-x)○s, o<x<1), with a composition where X is around 0.4 to 0.6, the Curie point is 3
00° C., and the dielectric constant near room temperature is about 1000.
本焼温度は1200℃程度であるが、表面から鉛の蒸発
がある為表面に鉛の欠乏状態が生じやすい、従って85
0℃でAg−Pdを焼付けると、電極成分が少し拡散す
る。この為、Ag−Pdと、PZTの間にPZTの遷移
元素の酸化物を1〜2重量%混合して誘電体の薄い層を
もうければ、Ag−Pdの侵入を防ぎ、誘電損失の増加
を防ぐことができる。遷移元素の酸化物はPZTの粒界
をおおうため、電極焼付部からの電極成分の拡散を防ぐ
働きをする。遷移元素酸化物は1〜2重量%程度の配合
で十分粒界をおおう。逆に入れすぎると全体の比誘電率
が低下し、静電容量が小さくなる。従って遷移元素酸化
物を混合した誘電体層であるセラミック焼結体3は、本
体の誘電体層であるセラミック焼結体2よりも薄くして
、電極成分の拡散防止に必要な最小限の厚さにしておく
。The main firing temperature is about 1200℃, but since lead evaporates from the surface, a lead-deficient state tends to occur on the surface.
When Ag-Pd is baked at 0°C, the electrode components are slightly diffused. For this reason, if a thin dielectric layer is formed between Ag-Pd and PZT by mixing 1 to 2% by weight of an oxide of a PZT transition element, the intrusion of Ag-Pd will be prevented and the dielectric loss will increase. can be prevented. Since the oxide of the transition element covers the grain boundaries of PZT, it functions to prevent the diffusion of electrode components from the electrode baked portion. The transition element oxide is blended in an amount of about 1 to 2% by weight to sufficiently cover the grain boundaries. On the other hand, if it is added too much, the overall dielectric constant decreases and the capacitance decreases. Therefore, the ceramic sintered body 3, which is a dielectric layer containing a transition element oxide, is made thinner than the ceramic sintered body 2, which is a dielectric layer of the main body, to achieve the minimum thickness necessary to prevent diffusion of electrode components. Set aside.
なお、遷移元素酸化物は結晶粒界を完全に埋めつくす必
要はない。Note that the transition element oxide does not need to completely fill the grain boundaries.
次に、この実施例の製造方法について説明する。Next, the manufacturing method of this example will be explained.
粉末原料のPbO,TiO2、ZrO2を所定の化学量
論比に合う禄高精度天秤にて秤量し、その後それらをミ
ルで攪拌する。その後その母体にポリビニルアルコール
(PVA)等のバインダーを添加してから金型でプレス
し適当な大きさにしてから電気炉にて850℃、2時間
の仮焼成を行なう、仮焼成済のPZTを一旦粉砕して粉
末状にする0次に粉末状のPZTを2つの容器に分ける
。The powder raw materials PbO, TiO2, and ZrO2 are weighed using a high precision balance that matches a predetermined stoichiometric ratio, and then they are stirred in a mill. After that, a binder such as polyvinyl alcohol (PVA) is added to the matrix, which is then pressed with a mold to an appropriate size, and then pre-sintered in an electric furnace at 850°C for 2 hours to produce pre-sintered PZT. First, the powdered PZT is pulverized into powder and divided into two containers.
一方の容器内のPZT粉末の重量を秤呈し、その重さに
対して、1〜2重量%のMnO2を加えてから攪拌する
。その後、各々の容器にPVAを添加する。添加後まず
金型の底部にMn○2人PZT粉末を入れ、次にPZT
のみの粉末を、さらにその上にMnO2人PZT粉末を
入れてプレスして成形してから電気炉で1200℃、2
時間の本焼成を行なう、MnO2の融点は535℃であ
るから、この本焼成により結晶粒界がMn酸化物で埋め
られた他のセラミック焼結体で挟まれたセラミック焼結
体ができる。The weight of the PZT powder in one container is weighed, and 1 to 2% by weight of MnO2 is added to the weight, followed by stirring. Then add PVA to each container. After addition, first put the Mn○2 PZT powder into the bottom of the mold, then add the PZT powder.
PZT powder was further put on top of it, pressed and molded, and then heated in an electric furnace at 1200℃ for 2 hours.
Since the melting point of MnO2 is 535° C., this main firing produces a ceramic sintered body sandwiched between other ceramic sintered bodies in which the grain boundaries are filled with Mn oxide.
以上説明したように、本発明は、焼付は電極とセラミッ
ク焼結体との間に遷移元素酸化物で結晶粒界を埋めた他
のセラミック焼結体層を設けることにより、焼付は電極
部の成分が内部に拡散するのを防ぎ、セラミックコンデ
ンサの誘電損失の増加をおさえるという効果がある。As explained above, in the present invention, baking can be prevented by providing another ceramic sintered body layer between the electrode and the ceramic sintered body in which the grain boundaries are filled with transition element oxide. This has the effect of preventing components from diffusing into the interior and suppressing an increase in dielectric loss of the ceramic capacitor.
第1図(a>は本発明の一実施例の断面図、第1図(b
)は第1図(a)のA部拡大図、第2図(a)は従来例
の断面図、第2図(b)は第2図(a)のB部拡大図で
ある。Figure 1 (a> is a sectional view of one embodiment of the present invention, Figure 1 (b)
) is an enlarged view of section A in FIG. 1(a), FIG. 2(a) is a sectional view of the conventional example, and FIG. 2(b) is an enlarged view of section B in FIG. 2(a).
Claims (1)
遷移元素酸化物で埋めた他のセラミック焼結体が介在し
ていることを特徴とするセラミックコンデンサ。A ceramic capacitor characterized in that another ceramic sintered body whose crystal grain boundaries are filled with a transition element oxide is interposed between the baked electrode and the ceramic sintered body.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61169103A JPS6325912A (en) | 1986-07-17 | 1986-07-17 | Ceramic capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61169103A JPS6325912A (en) | 1986-07-17 | 1986-07-17 | Ceramic capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6325912A true JPS6325912A (en) | 1988-02-03 |
JPH0513529B2 JPH0513529B2 (en) | 1993-02-22 |
Family
ID=15880361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61169103A Granted JPS6325912A (en) | 1986-07-17 | 1986-07-17 | Ceramic capacitor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6325912A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017120881A (en) * | 2015-12-29 | 2017-07-06 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | Multi-layer ceramic capacitor and method of producing the same |
-
1986
- 1986-07-17 JP JP61169103A patent/JPS6325912A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017120881A (en) * | 2015-12-29 | 2017-07-06 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | Multi-layer ceramic capacitor and method of producing the same |
Also Published As
Publication number | Publication date |
---|---|
JPH0513529B2 (en) | 1993-02-22 |
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