JPS63246830A - Passivation for super lsi - Google Patents
Passivation for super lsiInfo
- Publication number
- JPS63246830A JPS63246830A JP7962887A JP7962887A JPS63246830A JP S63246830 A JPS63246830 A JP S63246830A JP 7962887 A JP7962887 A JP 7962887A JP 7962887 A JP7962887 A JP 7962887A JP S63246830 A JPS63246830 A JP S63246830A
- Authority
- JP
- Japan
- Prior art keywords
- grain boundary
- film
- crystalline
- passivation
- potential barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002161 passivation Methods 0.000 title claims abstract description 11
- 150000002500 ions Chemical class 0.000 claims abstract description 10
- 238000005036 potential barrier Methods 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 5
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 2
- 229920005591 polysilicon Polymers 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 7
- 239000010409 thin film Substances 0.000 abstract 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 229910004541 SiN Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 240000005979 Hordeum vulgare Species 0.000 description 1
- 235000007340 Hordeum vulgare Nutrition 0.000 description 1
- 241000286209 Phasianidae Species 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分ｇｆ）
この発明はブロッキング効果が大き（て耐湿性）高いｇ
＋ｉ ａ 性の、［１，Ｓｌ用パッシベーションに関
するものである。[Detailed description of the invention] [Object of the invention] (Industrial use gf) This invention has a high blocking effect (and moisture resistance).
This relates to passivation for [1,Sl] with +ia characteristics.
（従来の技術）
従来技術では、ＬＳＩやその池の半導体チップのＩｓと
してＰ２Ｏ（りん酸シリカ系ガラス）が用いられて米た
。これは抵抗が高くて耐アルカリ性などには比較的好椿
性を示すが、耐湿性、長期ｆｆｉ頌性、不純物抑制効果
、パックベーションのクラックなどに問題があった。(Prior Art) In the prior art, P2O (phosphoric acid silica glass) has been used as the Is of LSI and other semiconductor chips. This has high resistance and is relatively good in terms of alkali resistance, etc., but it has problems with moisture resistance, long-term ffi resistance, impurity suppression effect, cracks in packvation, etc.
（発明が解決しようとする問題点）
本発明はこのような欠点を解決するためｉｃ研究がなさ
れたものであり、その目的とするところはパッシベーシ
ョン＠Ｌ−２１１以上のものにしてかつそのうちの一層
の結晶質嘆の粒界に池の一層の非晶質膜中のイオンを拡
散させて粒界のポテンシャルバリアーを高め不純物イオ
ンのブロッキング効果、耐湿性の向上などとはかりチッ
プの信碩性ｒ高めようとするものである。(Problems to be Solved by the Invention) The present invention is the result of IC research conducted in order to solve these drawbacks, and its purpose is to improve passivation @L-211 or higher, and to improve The ions in the amorphous film are diffused into the crystalline grain boundaries, increasing the potential barrier of the grain boundaries, blocking impurity ions, improving moisture resistance, and increasing the reliability of the weighing chip. This is what we are trying to do.
（問題点を解決するための手段）
本発明は−ｆ偵または複ａＳＳの結晶質「−を−・−ま
たは複数層の非晶質１−とが隣接して成る［ｊ模でかつ
結晶質の粒界に非晶質層からのイオン全拡散熱処理、そ
の池の方去で導入して粒界のポテンシャル障壁を高める
ことによりて模のブロッキング効果を高めたこと金時徴
とするものである。(Means for Solving the Problems) The present invention provides a structure in which crystalline or multiple aSS crystalline ``-'' or multiple layers of amorphous 1- are adjacent to each other. It is a sign that the blocking effect of the grain is enhanced by increasing the potential barrier of the grain boundary by introducing heat treatment for total diffusion of ions from the amorphous layer into the grain boundary and removing the pond. .
（作用）
前記のように粒界のポテンシャル障りｒ高めておくこと
によって結晶粒界での不純物イオンの移１助が抑制され
るため、半導体素子の高温高湿の特性を２〜３倍程度高
めることが可能となりた。(Function) As mentioned above, by increasing the grain boundary potential, the transfer of impurity ions at the grain boundaries is suppressed, thereby increasing the high temperature and high humidity characteristics of semiconductor elements by about 2 to 3 times. It became possible.
（実施例１）
＠１図に示したような非晶質薄＠（ガラス）１と結晶質
ｉ１僕３とを隣接させる。結晶１Ｒ薄模３にはポリシリ
コン、８ｉ０．、 ＳｉＮ、その他の酸化物弗化物等の
粒界をもつ絶縁；庚を用いる。ガラス１はＡｓ、Ｓｂ、
Ｂ、Ｐ、Ｆなど拡散性のイオン？含むガラＸ４薄１ｖＸ
を用いる。ガラスからの′６．界へＤ拡牧２は電界、熱
処理、イオン注入Ｗｋ組片せてもよい。(Example 1) An amorphous thin (glass) 1 and a crystalline i1 as shown in FIG. 1 are placed adjacent to each other. The crystal 1R thin pattern 3 is made of polysilicon, 8i0. Insulation with grain boundaries such as SiN, other oxides, fluorides, etc. is used. Glass 1 is As, Sb,
Diffusible ions such as B, P, and F? Contains Gala X4 Thin 1vX
Use. '6 from glass. The D expansion 2 to the field may be performed using an electric field, heat treatment, or ion implantation Wk assembly.
非晶質）漢１にＡｓドープりん酸シリカ系ガラスを用い
、結晶質臭２として窒化／リコン模ｒ用いた０両者゛Ｏ
ｉ＃模を接合した後に５５０℃１５分熱処理を行りて粒
界にＡｓ茫拡政２させた。この結果通常の窒化シリコン
の粒界のポテンシャルバリアーｉｄＯ，２ｅＶと低いの
に対し１本発明ｖｃｇけるＡｓ弘牧麦の粒界のポテンシ
ャルバリアーは０．７５ｅＶＩ度まで向上させることが
出来た。Amorphous) As-doped phosphoric acid silica glass was used for the glass 1, and nitrided/reconstituted glass was used for the crystalline odor 2.
After bonding the i# pattern, heat treatment was performed at 550° C. for 15 minutes to cause As expansion at the grain boundaries. As a result, while the grain boundary potential barrier idO of ordinary silicon nitride is as low as 2 eV, the grain boundary potential barrier of As Hiromaki barley according to the present invention could be improved to 0.75 eVI degree.
なおこのパッシベーション［ｋｉＵいてＳ ｔ （１０
０）／Ｓ ｔ Ｏｓ （５００Ａ ）／バクシベーシ、
：／ 膜（＋、５μｍ）／Ａ！電極のＭＯＳキャパシタ
ーと用いてＣ−Ｖ時（ｉｊｉ１ＭＨ１常温で評価したと
ころ第２図曲ＩＪＡに示すようになり、侍に異常はなか
った。Note that this passivation [kiUteS t (10
0)/S t Os (500A)/Bakshibasi,
:/ Membrane (+, 5μm)/A! Using a MOS capacitor as an electrode, evaluation was made at room temperature during CV (iji1MH1), as shown in Figure 2, song IJA, and no abnormality was found in the Samurai.
（＝Ｊ！施ｅＡＪ２）
ガラスとしてＳｉＯ，（９７％）−〇ｅｍ、（３％）４
喚１を用い、結晶賀漠３としてｐｏｌｙ−８ｉ（（用い
＋
この粒界にＢＦ、にイオン主人法（Ｉ Ｘ １０” ｃ
ｍ”５ Ｑ Ｋ ｅ Ｖ ）で拡散させた。この結晶質
模（１μｍ）にガラス’ｉ（０，５μ＋１１）ｋスパッ
ター法でつけパツシベーシヨン膜とした。この粒界のボ
テンンヤルバリアーは０．４２ｅＶでありた。またこの
パツシベーシヨン膜を用いて５ｔ（１００）／５ｉｎｌ
（りｏｏ 。(=J!useAJ2) SiO as glass, (97%)-〇em, (3%)4
Poly-8i ((using + BF at this grain boundary, ion main law (I x 10" c
m"5 Q K e V ). This crystalline model (1 μm) was coated with a glass 'i (0,5 μ + 11) k sputtering method to form a passivation film. The bottom layer of this grain boundary was 0. 42 eV. Also, using this passivation film, 5t(100)/5inl
(Rioo.
Ａ）／パｌバ、イベーション嘆／ＡＪ心極の積１−構造
のＭＯ８キ皐パシターのＣ−Ｖ特性と１ＭＨｚ常温で評
価したところ第２図曲線ＢＩＣ示すように正常なカーブ
を示していた。又このバッフベージ（ン模の比抵抗も西
宮のＰ ＳＧ＠よりも高いｌ×１０１６Ωｃｍ以上の値
が得られた。A)/Palva, evolution/AJ core product product 1-When the CV characteristics of the MO8-kiopasitor with the structure were evaluated at 1MHz at room temperature, it showed a normal curve as shown in Figure 2, curve BIC. . Moreover, the resistivity of this buff base model was higher than that of Nishinomiya's PSG@, which was 1×10 16 Ωcm or more.
（実、ｍ例３ ）
ガラスとしてＢＰＳＧ４＠１ （りん酸シリカホロシ系
）を用い、７晧晶質模３とし″ＣＢ拡牧拡散ｎ、嘆を用
いた。Ｂはイオン注入法で（Ｉ Ｘ １０”ｃｍ” ｔ
６０ＫｅＶ）導入した。この両者つτｓｉ漢と隣接させ
ガラス伝移点以下の＠度でυ口熱し、アニールした。(Actual Example 3) BPSG4@1 (phosphoric acid silica holographic system) was used as the glass, and "CB expansion diffusion" was used as the 7-crystalline model 3. "cm" t
60KeV) was introduced. These two were placed adjacent to each other and annealed by heating at a temperature below the glass transition point.
この粒界のポテンシャルバリアーは０．３５ｅＶであり
た。またこのパッシベーション＠七用いて５１（１００
）／Ｓ簾０１（５００Ａ）／パッシベーション／Ａｌ′
α甑７）積層構造のＭＯＳキャパシタ一つＣ−Ｖ特性を
ＩＭ）（ｚ常温で測定したところ第２図曲線Ｃで示すよ
うに正常なカーブを示していた。The potential barrier of this grain boundary was 0.35 eV. Also, using this passivation @7, 51 (100
)/S blind 01 (500A)/passivation/Al'
7) When the CV characteristic of a MOS capacitor with a laminated structure was measured at room temperature, it showed a normal curve as shown by curve C in Figure 2.
以上５！施例で示したようｔＣ本パックベーションは電
気的特性もすぐれ、かつ耐水性も通常の１’ ８Ｇの２
ｆＩｉ度ありすぐれたＬＳＩ用パックベーションである
ということができる。That’s all 5! As shown in the examples, the tC packvation has excellent electrical characteristics and water resistance as high as 1'8G2.
It can be said that this is an excellent packvation for LSI.
本発明によれば高信頼性の超り、ＳＩ用パッジベージタ
ンが得られる。According to the present invention, it is possible to obtain a padge beige tongue for SI that is more than highly reliable.
第１図は本発明パッシベーションの一部拡大断面図、第
２図は本発明によるＭＵ８キジパシターのＣ−■特性？
示す説明図である。
１・・・非晶質嘆、２・・・粒界拡散層、３・・・焙晶
質薄嘆。FIG. 1 is a partially enlarged sectional view of the passivation according to the present invention, and FIG. 2 is a C-■ characteristic of the MU8 pheasant passivator according to the present invention.
FIG. 1...Amorphous layer, 2...Grain boundary diffusion layer, 3...Crystalline layer.
Claims (1)
の粒界に非結晶質被膜からのイオンの拡散により粒界の
ポテンシャル障壁を高めたことを特徴とする超ＬＳＩ用
パッシベーション。A passivation for a VLSI, characterized in that a crystalline film and an amorphous film are adjacent to each other, and a potential barrier at the grain boundary is increased by diffusion of ions from the amorphous film to the grain boundaries of the crystalline film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7962887A JPS63246830A (en) | 1987-04-02 | 1987-04-02 | Passivation for super lsi |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7962887A JPS63246830A (en) | 1987-04-02 | 1987-04-02 | Passivation for super lsi |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63246830A true JPS63246830A (en) | 1988-10-13 |
Family
ID=13695341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7962887A Pending JPS63246830A (en) | 1987-04-02 | 1987-04-02 | Passivation for super lsi |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63246830A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100716904B1 (en) | 2005-12-28 | 2007-05-10 | 동부일렉트로닉스 주식회사 | Passivation layer for semiconductor device and manufacturging method thereof |
| JP2018164102A (en) * | 2011-09-26 | 2018-10-18 | 株式会社半導体エネルギー研究所 | Semiconductor device |
-
1987
- 1987-04-02 JP JP7962887A patent/JPS63246830A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100716904B1 (en) | 2005-12-28 | 2007-05-10 | 동부일렉트로닉스 주식회사 | Passivation layer for semiconductor device and manufacturging method thereof |
| JP2018164102A (en) * | 2011-09-26 | 2018-10-18 | 株式会社半導体エネルギー研究所 | Semiconductor device |
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