JPS63244528A - Formation of superconductive thin layer - Google Patents
Formation of superconductive thin layerInfo
- Publication number
- JPS63244528A JPS63244528A JP62079354A JP7935487A JPS63244528A JP S63244528 A JPS63244528 A JP S63244528A JP 62079354 A JP62079354 A JP 62079354A JP 7935487 A JP7935487 A JP 7935487A JP S63244528 A JPS63244528 A JP S63244528A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- heated
- oxygen
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims abstract description 11
- 230000000737 periodic effect Effects 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910010293 ceramic material Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 239000011364 vaporized material Substances 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 2
- 229910000018 strontium carbonate Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、超電導薄膜、特にセラミック系の超電導薄
膜を形成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming a superconducting thin film, particularly a ceramic superconducting thin film.
最近、セラミック系の超電導材料が高温超電導を示すも
のとして注目されている。このような材料は、例えば■
ａ族元素及びＩｂ族元素の酸化物とＩＩａ族元素の炭酸
塩の粉末を乾燥し、プレス成形、予備焼結、粉砕の過程
を数回繰り返した後、得られた粉末を再びプレス成形し
て最終焼結し、ディスク状焼結体を形成している。Recently, ceramic-based superconducting materials have attracted attention as exhibiting high-temperature superconductivity. Such materials are, for example, ■
After drying the powders of oxides of group a elements and group Ib elements and carbonates of group IIa elements, and repeating the process of press molding, preliminary sintering, and pulverization several times, the obtained powder was press molded again. It is finally sintered to form a disk-shaped sintered body.
このように、緻密で均一な焼結体を得るためには、非常
に手間を要する工程の繰り返しが必要であり、また厚み
にも限度があって、薄膜化が困難な問題がある。In this way, in order to obtain a dense and uniform sintered body, it is necessary to repeat a very laborious process, and there is also a limit to the thickness, making it difficult to reduce the thickness of the sintered body.
そのため、気相法が注目され始めているが、均一なセラ
ミック薄膜を形成する条件の設定が非常に難しい問題が
ある。For this reason, the vapor phase method is beginning to attract attention, but there is a problem in that it is extremely difficult to set the conditions to form a uniform ceramic thin film.
そこで、この発明の目的は、上記の問題を解決し、均一
な超電導薄膜を容易に形成できる方法を提供することに
ある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for solving the above problems and easily forming a uniform superconducting thin film.
上記の目的を達成するため、この発明においては、周期
律表のＩＩＩａ族元素、ＩＩａ族元素及びＩｂ族元素を
それぞれ含有する化合物を、同時に別個に加熱気化して
、酸素を含有する雰囲気下で、９００℃〜１１００℃に
加熱した基板上に付着堆積させ、薄膜を形成したのであ
る。In order to achieve the above object, in the present invention, compounds containing group IIIa elements, group IIa elements, and group Ib elements of the periodic table are simultaneously and separately heated and vaporized in an oxygen-containing atmosphere. , and was deposited on a substrate heated to 900° C. to 1100° C. to form a thin film.
前記それぞれの化合物は、制御された加熱温度によって
、希望する生成分に適した量の蒸気となり、これらが基
板上に付着すると共に、供給された酸素と結合しつつ高
温加熱された基板上で焼結されてセラミック薄膜が形成
される。By controlling the heating temperature, each of the above-mentioned compounds becomes a vapor in an amount suitable for the desired product, which is deposited on the substrate and is sintered on the substrate heated to a high temperature while combining with the supplied oxygen. The ceramic thin film is formed by bonding.
図示のように、成長室１は超高真空ポンプに連部には、
ヒータ４を組み込んだホルダ５が取り付けられ、このホ
ルダ５に基板Ｓが支持されている。As shown in the figure, the growth chamber 1 is connected to an ultra-high vacuum pump.
A holder 5 incorporating a heater 4 is attached, and a substrate S is supported by this holder 5.
さらに、基板の近傍には、酸素を供給するノズル６が配
置され、このノズル６は、配管７及び酸素マスフローコ
ントローラ８を介して、ボンベ９に接続されている。Furthermore, a nozzle 6 for supplying oxygen is arranged near the substrate, and this nozzle 6 is connected to a cylinder 9 via a pipe 7 and an oxygen mass flow controller 8.
いま、るつぼ３にそれぞれｍａ族元素（Ｓｃ、 Ｙ。Now, each of the Ma group elements (Sc, Y) is placed in crucible 3.
Ｌａ、 Ａｃ、 Ｃｅ、 Ｐｒ、 Ｎｄ、 Ｐｍｓ Ｓ
ｓ、 Ｅｎ、 Ｇｄ、 Ｔｂ、 Ｄｙ。La, Ac, Ce, Pr, Nd, Pms S
s, En, Gd, Tb, Dy.
Ｈ２Ｎ Ｅｒ５ＴＩＩ１％ Ｙｂｓ Ｌｎ）の化合物と
、ＩＩａ族元素（ＢｅＳＭｇＳＣａ、 Ｓｒ、 Ｂａ５
Ｒａ）の化合物と、Ｉｂ族元素（Ｃｕ、 Ａｇ、 Ａｕ
）の化合物を装填し、成長室１内内を１０−” 〜１０
−” Ｔｏｒｒ程度に保ち、例えば電子ビーム加熱、グ
ラファイトヒータ加熱、高周波加熱、赤外線加熱等の方
法で数１００℃〜２５００℃程度の温度に加熱し蒸発せ
しめる。H2N Er5TII1% Ybs Ln) and group IIa elements (BeSMgSCa, Sr, Ba5
Ra) and group Ib elements (Cu, Ag, Au
) and the inside of the growth chamber 1 was heated to 10-” to 10
-'' Torr, and evaporated by heating to a temperature of several 100° C. to 2,500° C. using a method such as electron beam heating, graphite heater heating, high frequency heating, or infrared heating.
一方、基板ＳとしてＡＪｔＯ＋ 、ＢＮなどのセラミッ
ク板が装着されており、ヒータ４によって９００℃〜１
１００℃の温度に加熱されかつ基板Ｓにノズル６から酸
素が吹き付けられ、基板Ｓの近傍のみが酸素リンチにな
るようにする。なお、酸素の吹き付は時にイオン化する
ことによって、酸素イオンビームを基板に照射してもよ
い。On the other hand, a ceramic plate such as AJtO+ or BN is mounted as the substrate S, and the heater 4
The substrate S is heated to a temperature of 100° C., and oxygen is blown onto the substrate S from a nozzle 6 so that only the vicinity of the substrate S is lynched with oxygen. Note that when blowing oxygen, the substrate may be irradiated with an oxygen ion beam by ionizing the oxygen.
このようにして、蒸発した原料は、基板Ｓ上に付着し、
酸素と結合しながらセラミックを成形し、堆積して薄膜
が形成される。In this way, the evaporated raw material adheres to the substrate S,
The ceramic is formed while bonding with oxygen and is deposited to form a thin film.
なお、前記ｍａ族元素の化合物としては、ＬａｚＯｘ
、ｈｏｓ、５Ｃｔ０２ ％ ｆｌ ａ族元素の化合物と
しては、ＢａＣＯ５、ＳｒＣＯ３、ＣａＣＯ５、Ｉ ｂ
族元素の化合物としては、ＣｕＯ、Ａｇｏ等が特に好ま
しい。In addition, as the compound of the ma group element, LazOx
, hos, 5Ct02% fl A group element compounds include BaCO5, SrCO3, CaCO5, I b
As the group element compound, CuO, Ago, etc. are particularly preferred.
また、基板Ｓに代えて、光ファイバ等の線材を用いると
、複合超電導線を容易に得ることができる。Moreover, if a wire such as an optical fiber is used in place of the substrate S, a composite superconducting wire can be easily obtained.
さらに、基板Ｓに予めマスキングを施して、セラミック
薄板を形成した後、マスキングを除去するか、場合によ
ってはマスキングをそのままにしておいて、超電導回路
を形成することもできる。Furthermore, the superconducting circuit can be formed by masking the substrate S in advance and forming the ceramic thin plate, and then removing the masking or, depending on the case, leaving the masking as it is.
次に、さらに詳細な実施例について述べる。Next, more detailed examples will be described.
いま、原料として、Ｌａ！０３．５ｒＣＯｚ 、ＣｕＯ
をそれぞれるつぼに充填した後、成長室を１０− ＋
６〜１０−■Ｔｏｒｒ程度に減圧し、石英基板を約１０
００℃に加熱すると共に、１０ｃｃ／ａ＋ｉｎにマスフ
ローコントロールした酸素を基板表面に吹き付けておき
、電子ビームにより、同時に、Ｌａｖａｓを２４００℃
程度、ＳｒＣＯ３を２２００℃程度、ＣｕＯを９８０℃
程度にそれぞれ加熱気化させ、上記石英板上にＬａ−３
ｒ−Ｃｕ−０系のセラミックより成る超電導薄膜を形成
した。薄膜は約１μｍであり、超電導遷移温度は約５０
°にであった。Now, as a raw material, La! 03.5rCOz, CuO
After filling each crucible, the growth chamber was heated to 10− +
The pressure is reduced to about 6 to 10 Torr, and the quartz substrate is heated to about 10 Torr.
At the same time, the surface of the substrate was heated to 00°C, and oxygen with a mass flow control of 10cc/a+in was blown onto the surface of the substrate, and at the same time Lavas was heated to 2400°C using an electron beam.
The temperature is approximately 2200℃ for SrCO3 and 980℃ for CuO.
La-3
A superconducting thin film made of r-Cu-0 ceramic was formed. The thin film is about 1 μm, and the superconducting transition temperature is about 50
It was at °.
〔効果〕
この発明はよれば、以上のように、基板を高温で加熱し
ながら酸素を吹き付けて原料を基板上に付着焼結させた
ので、均一な構造を有する薄膜が得られ、従って性能の
優れた種々の超電導材料を容易に作成することができ、
また基板の形態を板状、線状等任意に選択可能であるか
ら、広い適用範囲を有する。[Effects] According to the present invention, as described above, since the raw material is adhered and sintered on the substrate by blowing oxygen while heating the substrate at a high temperature, a thin film having a uniform structure can be obtained, and therefore performance can be improved. A variety of excellent superconducting materials can be easily created,
In addition, since the shape of the substrate can be arbitrarily selected such as a plate shape or a linear shape, it has a wide range of application.
図はこの発明に用いる装置の一例を示す線図である。
１・・・・・・成長室、２・・・・・・吸引口、３・・
・・・・るつぼ、４・・・・・・ヒータ、５・・・・・
・ホルダ、６・・・・・・ノズル％Ａ％Ｂ、Ｃ・・・・
・・原料、Ｓ・・・・・・基板。
手続補正書、。え、
１．事件の表示
超電導薄膜の形成方法
住所 大阪市東区北浜５丁目１５番地氏名（名称）
（２１３） 住友電気工業株式会社電話大阪０６
（６３１） ００２１ （代表）５゜
補正の内容
（１） 明細書第４頁６行目のｒＬｎＪをｒＬｕＪに
補正します。
（２） 同書同頁９行目の「内向を」を「内を」に補
正します。
（３）同書第６頁７行目の「この発明はよれば」を「こ
の発明によれば」に補正します。The figure is a diagram showing an example of a device used in the present invention. 1...Growth chamber, 2...Suction port, 3...
... Crucible, 4 ... Heater, 5 ...
・Holder, 6... Nozzle %A%B, C...
...Raw material, S...Substrate. Procedural Amendment,. Eh, 1. Incident display Method for forming superconducting thin films Address: 5-15 Kitahama, Higashi-ku, Osaka Name:
(213) Sumitomo Electric Industries, Ltd. Telephone Osaka 06
(631) 0021 (Representative) Details of 5° correction (1) Correct rLnJ on page 4, line 6 of the specification to rLuJ. (2) In the same page of the same book, line 9, "Uchimewo" is corrected to "Uchiwo". (3) "According to this invention" on page 6, line 7 of the same document is amended to "according to this invention."
Claims (4)
素の各々を含有する化合物を同時にそれぞれ加熱気化さ
せ、９００℃〜１１００℃に加熱した基板の近傍を酸素
リッチにして基板上に付着堆積させることから成る超電
導薄膜の形成方法。(1) Compounds containing Group IIIa elements, Group IIa elements, and Group Ib elements of the periodic table are heated and vaporized at the same time, and the vicinity of the substrate heated to 900°C to 1100°C is enriched with oxygen and placed on the substrate. A method of forming a superconducting thin film comprising depositing the superconducting film on the substrate.
Ｙ＿２Ｏ＿３、Ｓｃ＿２Ｏ＿３のいずれかである特許請
求の範囲第（１）項記載の超電導薄膜の形成方法。(2) The compound of the IIIa group element is La_2O_3,
A method for forming a superconducting thin film according to claim (1), which is either Y_2O_3 or Sc_2O_3.
Ｏ＿３、ＣａＣＯ＿３のいずれかである特許請求の範囲
第（１）項記載の超電導薄膜の形成方法。(3) The compound of the group IIa element is BaCO_3, SrC
A method for forming a superconducting thin film according to claim (1), wherein the superconducting thin film is either O_3 or CaCO_3.
ある特許請求の範囲第（１）項記載の超電導薄膜の形成
方法。(4) The method for forming a superconducting thin film according to claim (1), wherein the compound of the Ib group element is CuO or AgO.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62079354A JPS63244528A (en) | 1987-03-30 | 1987-03-30 | Formation of superconductive thin layer |
| CA000562645A CA1332324C (en) | 1987-03-30 | 1988-03-28 | Method for producing thin film of oxide superconductor |
| EP88105179A EP0285132A3 (en) | 1987-03-30 | 1988-03-30 | Method for producing thin film of oxide superconductor |
| US07/175,214 US5017550A (en) | 1987-03-30 | 1988-03-30 | Method for producing thin film of oxide superconductor |
| US07/630,241 US5108984A (en) | 1987-03-30 | 1990-12-19 | Method for producing thin film of oxide superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62079354A JPS63244528A (en) | 1987-03-30 | 1987-03-30 | Formation of superconductive thin layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63244528A true JPS63244528A (en) | 1988-10-12 |
Family
ID=13687565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62079354A Pending JPS63244528A (en) | 1987-03-30 | 1987-03-30 | Formation of superconductive thin layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63244528A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63225528A (en) * | 1987-03-13 | 1988-09-20 | Toa Nenryo Kogyo Kk | Production of superconductive compound oxide |
-
1987
- 1987-03-30 JP JP62079354A patent/JPS63244528A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63225528A (en) * | 1987-03-13 | 1988-09-20 | Toa Nenryo Kogyo Kk | Production of superconductive compound oxide |
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