JPS63244530A - Formation of superconductive thin film - Google Patents
Formation of superconductive thin filmInfo
- Publication number
- JPS63244530A JPS63244530A JP62079357A JP7935787A JPS63244530A JP S63244530 A JPS63244530 A JP S63244530A JP 62079357 A JP62079357 A JP 62079357A JP 7935787 A JP7935787 A JP 7935787A JP S63244530 A JPS63244530 A JP S63244530A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- oxygen
- heated
- torr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 4
- 229910052788 barium Inorganic materials 0.000 claims abstract description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052802 copper Inorganic materials 0.000 claims abstract 3
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract 3
- 238000000151 deposition Methods 0.000 claims abstract 2
- 230000008016 vaporization Effects 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 claims 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 abstract description 2
- 229910002480 Cu-O Inorganic materials 0.000 abstract 1
- 229910010293 ceramic material Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910002226 La2O2 Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、超電導薄膜、特にセラミック系の超電導薄
膜を形成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming a superconducting thin film, particularly a ceramic superconducting thin film.
最近、セラミック系の超電導材料が高温超電導を示すも
のとして注目されている。このような材料は、例えばｍ
ａ族元素及びＩｂ族元素の酸化物とｍａ族元素の炭酸塩
の粉末を乾燥し、プレス成形、予備焼結、粉砕の過程を
数回繰り返した後、得られた粉末を再びプレス成形して
最終焼結し、ディスク状焼結体を形成している。Recently, ceramic-based superconducting materials have attracted attention as exhibiting high-temperature superconductivity. Such materials are for example m
After drying the powders of oxides of group A elements and group Ib elements and carbonates of group M elements, and repeating the process of press molding, preliminary sintering, and pulverization several times, the obtained powder is press molded again. It is finally sintered to form a disk-shaped sintered body.
このように、緻密で均一な焼結体を得るためには、非常
に手間を要する工程の繰り返しが必要であり、また厚み
にも限度があって、薄膜化が困難な問題がある。In this way, in order to obtain a dense and uniform sintered body, it is necessary to repeat a very laborious process, and there is also a limit to the thickness, making it difficult to reduce the thickness of the sintered body.
そのため、気相法が注目され始めているが、均一なセラ
ミック薄膜を形成する条件が非常に難しい問題がある。For this reason, the vapor phase method is beginning to attract attention, but the problem is that the conditions for forming a uniform ceramic thin film are extremely difficult.
そこで、この発明の目的は、上記の問題を解決し、均一
な高温超電導薄膜を容易に形成できる方法を提供するこ
とにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for solving the above problems and easily forming a uniform high-temperature superconducting thin film.
上記の目的を達成するため、この発明においては、スト
ロンチウム又はバリウムと希土類元素及びＣｕの単体又
は化合物を超高真空下で、同時に別個に加熱気化して分
子線を発生させ、酸素を含有する雰囲気下で、加熱した
基板上にエピタキシャル成長させて、セラミック系超電
導薄膜を形成したのである。In order to achieve the above object, in this invention, a single substance or a compound of strontium or barium, a rare earth element, and Cu are simultaneously and separately heated and vaporized in an ultra-high vacuum to generate a molecular beam, and an oxygen-containing atmosphere is created. Then, a ceramic superconducting thin film was formed by epitaxial growth on a heated substrate.
前記それぞれの元素又は化合物は、制御された加熱温度
によって、希望する生成分に適した量の蒸気となり、こ
れらが基板上に付着すると共に、供給された酸素と化合
及び結合しつつ高温加熱された基板上で焼結されてセラ
ミック薄膜が形成される。Each of the above-mentioned elements or compounds becomes vapor in an amount suitable for the desired product by controlling the heating temperature, and the vapor is deposited on the substrate and is heated at high temperature while combining and bonding with the supplied oxygen. A ceramic thin film is formed by sintering on the substrate.
図示のように、成長室１は超高真空ポンプに連通される
吸引口２を有し、成長室１内の下部には、原料Ａ、Ｂ、
を装填するるつぼ３が配置され、また酸素雰囲気発生源
６が配置されている。成長室１の上部には、ヒータ４を
組み込んだ回転可能のホルダ５が取り付けられ、このホ
ルダ５に基板Ｓが支持されている。As shown in the figure, the growth chamber 1 has a suction port 2 connected to an ultra-high vacuum pump, and the lower part of the growth chamber 1 contains raw materials A, B,
A crucible 3 to be charged with is disposed, and an oxygen atmosphere generating source 6 is also disposed. A rotatable holder 5 incorporating a heater 4 is attached to the upper part of the growth chamber 1, and a substrate S is supported on this holder 5.
いま、るつぼ３にそれぞれ単体金属又は化合物を装填し
、成長室１内内を１０− ”〜１０−ロＴｏｒｒ程度に
保ち、高周波加熱、赤外線加熱等の方法で数１００℃〜
２５００℃程度の温度に加熱し蒸発せしめる。Now, each crucible 3 is loaded with a single metal or a compound, the inside of the growth chamber 1 is maintained at about 10-'' to 10-Torr, and heated to several 100 degrees Celsius by high-frequency heating, infrared heating, etc.
It is heated to a temperature of about 2500°C to evaporate it.
一方、回転するホルダ５には、基板Ｓとしてセレンやジ
ルコニア板が装着されており、ヒータ４によって５００
℃〜９００℃の温度に加熱されかつ基板Ｓに酸素雰囲気
発生源６から酸素ガスが吹き付けられている。なお、酸
素の雰囲気の形成は、酸素ガスの供給によるほか、酸素
イオンビーム、酸素プラズマ、酸素ラジカルを基板に照
射してもよい。On the other hand, a selenium or zirconia plate is attached to the rotating holder 5 as a substrate S, and the heater 4
The substrate S is heated to a temperature of .degree. C. to 900.degree. C. and oxygen gas is blown onto the substrate S from an oxygen atmosphere generation source 6. Note that the oxygen atmosphere may be formed not only by supplying oxygen gas but also by irradiating the substrate with an oxygen ion beam, oxygen plasma, or oxygen radicals.
このようにして、蒸発した原料は、分子線となって基板
Ｓ上に付着し、酸素と化合及び結合しながらエピタキシ
ャル成長し、堆積して薄膜が形成される。In this way, the evaporated raw material becomes a molecular beam and adheres to the substrate S, and is epitaxially grown while being combined and bonded with oxygen, and is deposited to form a thin film.
また、基板Ｓに代えて、光ファイバ等の線材を用いると
、複合超電導線を容易に得ることができる。Moreover, if a wire such as an optical fiber is used in place of the substrate S, a composite superconducting wire can be easily obtained.
さらに、基板Ｓに予めマスキングを施して、セラミック
薄板を形成した後、マスキングを除去するか、場合によ
ってはマスキングをそのままにしておいて、超電導回路
を形成することもできる。Furthermore, the superconducting circuit can be formed by masking the substrate S in advance and forming the ceramic thin plate, and then removing the masking or, depending on the case, leaving the masking as it is.
次に、さらに詳細な実施例について述べる。Next, more detailed examples will be described.
いま、原料として、Ｌａ２Ｏ２％ ５ｒＣＯｘ ％ Ｃ
ｕＯをそれぞれるつぼに充填した後、成長室をＩＱ−Ｉ
ＩＩ〜ＩＱ−１）Ｔｏｒｒ程度に減圧し、ジルコニア
基板を約６００℃に加熱すると共に、１５ｒｐ＋ｍで回
転させ、酸素分圧１０−ツ〜１０−’Ｔｏｒｒの雰囲気
中で、電子ビームにより、同時に、Ｌａ、Ｏ，を２４０
０℃程度、５ｒＣＯｓを２２００℃程度、ＣｎＯを９８
０℃程度にそれぞれ加熱気化させて強度ｌＸｌ０−’〜
１×１０４Ｔｏｒｒの分子線を発生させ、上記ジルコニ
ア板上にＬａ−５ｒ−Ｃｎ−０系のセラミックより成る
超１を導薄膜を形成した。′ｉＲ膜は約１μｍであり、
臨界温度は約４０”Ｋであった。Now, as raw materials, La2O2% 5rCOx % C
After filling each crucible with uO, the growth chamber was set to IQ-I.
II to IQ-1) Reduce the pressure to about Torr, heat the zirconia substrate to about 600°C, rotate it at 15 rpm + m, and simultaneously use an electron beam in an atmosphere with an oxygen partial pressure of 10- to 10-' Torr. La, O, 240
About 0℃, 5rCOs at about 2200℃, CnO at 98℃
Heat and vaporize each at around 0°C to obtain strength lXl0-'~
A molecular beam of 1×10 4 Torr was generated to form a super conductive thin film made of La-5r-Cn-0 ceramic on the zirconia plate. 'iR membrane is approximately 1 μm,
The critical temperature was approximately 40''K.
この発明はよれば、以上のように、回転する基板を加熱
しながら酸素雰囲気中で原料を基板上に付着させてエピ
タキシャル成長させたので、均一な構造を有する薄膜が
得られ、従って性能の優れた種々の超電導材料を容易に
作成することができ、また基板の形態を板状、線状等任
意に選択可能であるから、広い適用範囲を有する。According to the present invention, as described above, since the raw material is deposited on the substrate in an oxygen atmosphere while heating the rotating substrate and grown epitaxially, a thin film having a uniform structure can be obtained, and therefore a thin film with excellent performance can be obtained. Various superconducting materials can be easily produced, and the shape of the substrate can be arbitrarily selected, such as plate or linear, so it has a wide range of applications.
図はこの発明に用いる装置の一例を示す線図である。
１・・・・・・成長室、２・・・・・・吸引口、３・・
・・・・るつぼ、４・・・・・・ヒータ、５・・・・・
・ホルダ、６・・・・・・酸素雰囲気発生源、Ａ、Ｂ・
・・・・・原料、Ｓ・・・・・・基板。The figure is a diagram showing an example of a device used in the present invention. 1...Growth chamber, 2...Suction port, 3...
... Crucible, 4 ... Heater, 5 ...
・Holder, 6...Oxygen atmosphere source, A, B・
...Raw material, S...Substrate.
Claims (2)
の単体金属又は化合物を超高真空かつ酸素雰囲気中で、
同時にそれぞれ加熱気化させて分子線を発生させ、加熱
した基板上に付着させてエピタキシャル成長させること
から成る超電導薄膜の形成方法。(1) A single metal or a compound of strontium or barium, rare earth elements, and copper in an ultra-high vacuum and an oxygen atmosphere,
A method for forming a superconducting thin film, which consists of simultaneously heating and vaporizing each to generate molecular beams, depositing them on a heated substrate, and growing them epitaxially.
ンジウムのいずれかである特許請求の範囲第（１）項記
載の超電導薄膜の形成方法。(2) The method for forming a superconducting thin film according to claim (1), wherein the rare earth element is any one of lanthanum, yttrium, and scandium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62079357A JPH0753638B2 (en) | 1987-03-30 | 1987-03-30 | Method for forming superconducting thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62079357A JPH0753638B2 (en) | 1987-03-30 | 1987-03-30 | Method for forming superconducting thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63244530A true JPS63244530A (en) | 1988-10-12 |
| JPH0753638B2 JPH0753638B2 (en) | 1995-06-07 |
Family
ID=13687645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62079357A Expired - Lifetime JPH0753638B2 (en) | 1987-03-30 | 1987-03-30 | Method for forming superconducting thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0753638B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01212220A (en) * | 1987-10-09 | 1989-08-25 | Fujitsu Ltd | Vapor growth method for superconducting material |
| US7785671B2 (en) | 2003-02-17 | 2010-08-31 | Japan Fine Ceramics Center | Thermal barrier coating system and method of manufacturing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63225528A (en) * | 1987-03-13 | 1988-09-20 | Toa Nenryo Kogyo Kk | Production of superconductive compound oxide |
| JPS63237313A (en) * | 1987-03-18 | 1988-10-03 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Superconductive structural body and manufacture thereof |
-
1987
- 1987-03-30 JP JP62079357A patent/JPH0753638B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63225528A (en) * | 1987-03-13 | 1988-09-20 | Toa Nenryo Kogyo Kk | Production of superconductive compound oxide |
| JPS63237313A (en) * | 1987-03-18 | 1988-10-03 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Superconductive structural body and manufacture thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01212220A (en) * | 1987-10-09 | 1989-08-25 | Fujitsu Ltd | Vapor growth method for superconducting material |
| US7785671B2 (en) | 2003-02-17 | 2010-08-31 | Japan Fine Ceramics Center | Thermal barrier coating system and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0753638B2 (en) | 1995-06-07 |
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