JPS63241738A - 光メモリ用記録膜材料の製造方法 - Google Patents
光メモリ用記録膜材料の製造方法Info
- Publication number
- JPS63241738A JPS63241738A JP62075725A JP7572587A JPS63241738A JP S63241738 A JPS63241738 A JP S63241738A JP 62075725 A JP62075725 A JP 62075725A JP 7572587 A JP7572587 A JP 7572587A JP S63241738 A JPS63241738 A JP S63241738A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- recording film
- optical memory
- film material
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 73
- 230000003287 optical effect Effects 0.000 title claims abstract description 47
- 230000015654 memory Effects 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000203 mixture Substances 0.000 claims abstract description 42
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000001301 oxygen Substances 0.000 claims abstract description 37
- 239000011521 glass Substances 0.000 claims abstract description 24
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 229910052718 tin Inorganic materials 0.000 claims abstract description 12
- 230000005496 eutectics Effects 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 31
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052681 coesite Inorganic materials 0.000 abstract description 10
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 10
- 229910052682 stishovite Inorganic materials 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 10
- 229910052905 tridymite Inorganic materials 0.000 abstract description 10
- 239000000377 silicon dioxide Substances 0.000 abstract description 9
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 9
- 239000003708 ampul Substances 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 239000000155 melt Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000004321 preservation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 81
- 230000004913 activation Effects 0.000 description 28
- 238000000034 method Methods 0.000 description 16
- 238000003860 storage Methods 0.000 description 11
- 239000005387 chalcogenide glass Substances 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000470 constituent Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000009827 uniform distribution Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910003069 TeO2 Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 3
- 239000006121 base glass Substances 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001706 oxygenating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62075725A JPS63241738A (ja) | 1987-03-27 | 1987-03-27 | 光メモリ用記録膜材料の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62075725A JPS63241738A (ja) | 1987-03-27 | 1987-03-27 | 光メモリ用記録膜材料の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63241738A true JPS63241738A (ja) | 1988-10-07 |
| JPH0560434B2 JPH0560434B2 (enrdf_load_stackoverflow) | 1993-09-02 |
Family
ID=13584533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62075725A Granted JPS63241738A (ja) | 1987-03-27 | 1987-03-27 | 光メモリ用記録膜材料の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63241738A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020145364A (ja) | 2019-03-08 | 2020-09-10 | キオクシア株式会社 | 記憶装置 |
-
1987
- 1987-03-27 JP JP62075725A patent/JPS63241738A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0560434B2 (enrdf_load_stackoverflow) | 1993-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3761287B2 (ja) | 光記録媒体およびその製造方法 | |
| JPS63251290A (ja) | 光記録媒体と記録・再生方法及びその応用 | |
| JPS60177446A (ja) | 光デイスク記録媒体 | |
| US20240292762A1 (en) | Phase change material | |
| EP0188100A2 (en) | Optical recording medium formed of chalcogen oxide and method for producing same | |
| JPS63241738A (ja) | 光メモリ用記録膜材料の製造方法 | |
| JP3052341B2 (ja) | 光学的記録方法 | |
| JP2937296B2 (ja) | 書き替え可能な相変化型光メモリ媒体の製造方法 | |
| US7407696B2 (en) | Phase change materials for storage media | |
| JPH01287836A (ja) | 書き換え可能な相変化型光メモリ媒体 | |
| JP2766276B2 (ja) | 書き替え可能な相変化型光メモリ媒体 | |
| Persch et al. | Crystallization and Vitrification Kinetics by Design: The Role of Chemical Bonding | |
| JPH04290793A (ja) | 相変化型記録材料およびその製造方法 | |
| JPS60112490A (ja) | 光学情報記録部材の製造法 | |
| JP2579332B2 (ja) | 光記録媒体 | |
| JPH01220236A (ja) | 書き替え可能な相変化型光メモリ媒体 | |
| JPH01224940A (ja) | 書換え可能型相変化記録媒体 | |
| JPS63136336A (ja) | 情報記録媒体 | |
| JPH05174422A (ja) | 書換え可能型光情報記録媒体 | |
| JPH01287834A (ja) | 書き換え可能な相変化型光メモリ媒体 | |
| JPH0560797B2 (enrdf_load_stackoverflow) | ||
| JPH01287835A (ja) | 書き換え可能な相変化型光メモリ媒体 | |
| Mongia et al. | New quaternary material for high-speed phase-change optical recording | |
| JPH0560435B2 (enrdf_load_stackoverflow) | ||
| JPH0327034B2 (enrdf_load_stackoverflow) |