JPS63239708A - Dielectric ceramic composition - Google Patents
Dielectric ceramic compositionInfo
- Publication number
- JPS63239708A JPS63239708A JP62074629A JP7462987A JPS63239708A JP S63239708 A JPS63239708 A JP S63239708A JP 62074629 A JP62074629 A JP 62074629A JP 7462987 A JP7462987 A JP 7462987A JP S63239708 A JPS63239708 A JP S63239708A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- dielectric ceramic
- firing
- ceramic composition
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims description 30
- 239000000919 ceramic Substances 0.000 title description 11
- 229910052573 porcelain Inorganic materials 0.000 claims description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 3
- 239000005751 Copper oxide Substances 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 22
- 238000010304 firing Methods 0.000 description 20
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000000395 magnesium oxide Substances 0.000 description 11
- 239000000843 powder Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000003985 ceramic capacitor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、1100℃以下で焼成される高誘電率系誘電
体磁器組成物に関し、特に低酸素分圧雰囲気で焼成でき
高い抵抗率の得られる組成物に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a high dielectric constant dielectric ceramic composition that is fired at 1100°C or lower, and in particular a composition that can be fired in a low oxygen partial pressure atmosphere and has a high resistivity. relating to things.
従来の技術
近年セラミックコンデンサにおいては素子の小型化、大
容量化への要求から積層型セラミックコンデンサが急速
に普及しつつある。積層型セラミックコンデンサは内部
電極とセラミックを一体焼成する工程によって通常製造
される。従来より高誘電率系のセラミックコンデンサ材
料にはチタン酸バリウム系の材料が用いられてきたが、
焼成温度が1300℃程度と高いため、内部電極材料と
してはPt、Pdなどの高価な金属を用いる必要があっ
た。BACKGROUND OF THE INVENTION In recent years, multilayer ceramic capacitors are rapidly becoming popular due to the demand for smaller elements and larger capacitance in ceramic capacitors. Multilayer ceramic capacitors are typically manufactured by a process of integrally firing internal electrodes and ceramics. Barium titanate-based materials have traditionally been used as high-permittivity ceramic capacitor materials, but
Since the firing temperature is as high as about 1300° C., it is necessary to use expensive metals such as Pt and Pd as internal electrode materials.
これに対し発明者らは、低酸素分圧雰囲気中1100℃
以下で焼成でき銅を主成分とする卑金属材料を内部電極
として使用できるPba <Mgxt3Nb2t2)x
Tiy (Nis/2W1/2)O2 )Z O2+
aで表される誘電体磁器組成物を提案している。この組
成物は低温度で焼成でき低酸素分圧下で焼成した際高い
抵抗率を有する特性をもち、鋼もしくは銅を主成分とす
る内部電極をもちいた積層コンデンサ素子にもちいるこ
とができる優れた誘電体磁器組成物である。いっぽう上
に述べたセラミック積層コンデンサ素子の製造工程にお
いては、焼成時に内部電極である銅もしくは鋼を主成分
とする合金が酸化せず、誘電体セラミックが還元して低
抵抗化しない酸素分圧下での焼成が必要とされる。この
酸素分圧の制御においては、焼成温度が高いほど最適条
件を得るためのガス混合比の制御が困難になる。このた
め、誘電体セラミックにたいしては、より低い温度で焼
成できかつ高い抵抗率を有する組成物が求められていた
。On the other hand, the inventors proposed that
Pba <Mgxt3Nb2t2)x, which can be fired as follows and can be used as an internal electrode using a base metal material mainly composed of copper
Tiy (Nis/2W1/2)O2 )Z O2+
A dielectric ceramic composition represented by a is proposed. This composition can be fired at low temperatures and has high resistivity when fired under low oxygen partial pressure, making it an excellent material that can be used in multilayer capacitor elements with internal electrodes mainly made of steel or copper. It is a dielectric ceramic composition. On the other hand, in the manufacturing process of the ceramic multilayer capacitor elements mentioned above, during firing, the internal electrodes, which are alloys mainly composed of copper or steel, are not oxidized and the dielectric ceramic is reduced and the resistance is not lowered under oxygen partial pressure. firing is required. In controlling this oxygen partial pressure, the higher the firing temperature is, the more difficult it becomes to control the gas mixture ratio to obtain optimal conditions. For this reason, there has been a demand for dielectric ceramic compositions that can be fired at lower temperatures and have high resistivity.
発明が解決しようとする問題点
Pb2(MgIts Nb2t3)X Tiy (Ni
1z2W1/2)O2 )Z02+aで表される組成物
を主成分とする誘電体磁器組成物において、誘電特性を
損なわず焼成温度をより低くし抵抗率の高い誘電体磁器
組成物を提供することを目的としている。Problem to be solved by the invention Pb2(MgIts Nb2t3)X Tiy (Ni
1z2W1/2)O2)Z02+a In a dielectric ceramic composition whose main component is a composition represented by Z02+a, it is an object of the present invention to provide a dielectric ceramic composition with high resistivity by lowering the firing temperature without impairing the dielectric properties. The purpose is
問題点を解決するための手段
Pba(Mgtzs Nb5zs )x Tiy (N
i1z2W1/2)O2 )ZO2+aで表される磁器
組成物(ただしx+y+z=1)に対し、副成分として
銅酸化物をCu2O換算で0.03〜0.65重量%含
有する組成物とする。Means for solving the problem Pba (Mgtzs Nb5zs ) x Tiy (N
i1z2W1/2)O2)ZO2+a (where x+y+z=1) is a composition containing 0.03 to 0.65% by weight of copper oxide as a subcomponent in terms of Cu2O.
作用
本発明の誘電体磁器組成物の系において、副成分を含ま
ない組成物に対し、副成分を含む組成物は低い温度で焼
結し誘電率の低下は少なく、誘電損失の増大も小さく、
かつ抵抗率は同等ないし向上する。Function: In the dielectric ceramic composition system of the present invention, the composition containing the subcomponent is sintered at a lower temperature than the composition containing no subcomponent, the dielectric constant decreases less, the dielectric loss increases less,
And the resistivity is the same or improved.
実施例 出発原料には化学的に高純度なPbO,MgO。Example The starting materials are chemically highly pure PbO and MgO.
Nb2O5、TiO2、NiO,WOs 、CIJ20
を用いた。これらを純度補正をおこなったうえで所定量
を秤量し、ジルコニア製玉石を用い純水を溶媒としボー
ルミルで17時時間式混合した。これを吸引ろ過して水
分の大半を分離した後乾燥し、その後ライカイ機で充分
解砕した後粉体量の5wt%の水分を加え、直径60m
高さ約50mmの円柱′状に成形圧力500kg/cm
2 で成形した。これをアルミナルツボ中に入れ同質
のフタをし、680℃〜760℃で2時間仮焼した。次
に仮焼物をアルミナ乳鉢で粗砕し、さらにジルコニア製
玉石を用い純水を溶媒としてボールミルで17時間粉砕
し、これを吸引ろ過し水分の大半を分離した後乾燥した
。以上の仮焼、粉砕、乾燥を数回くりがえした後この粉
末にポリビニルアルコール6wt%水溶液を粉体量の6
wt%加え、32メツシユふるいを通して造粒し、成形
圧力1000kg/cm2で成形した。成形物は空気中
で700℃まで昇温し1時間保持しポリビルアルコール
分をバーンアウトした。これを、上述の仮焼粉を体積の
173程度敷きつめた上に200メツシュMgO粉を約
1mm敷いたマグネシャ磁器容器に移し、同質のフタを
し、管状電気炉の炉心管内に挿入し、炉心管内を ゛ロ
ータリーポンプで脱気したのち、N2H2−H20混合
ガスで置換し、焼成温度での酸素分圧(PO2)が1.
oxlo−8atmになるようN2とH2ガスの混合比
を調節しながら混合ガスを流し所定温度まで400℃/
h rで昇温し、2時間保持後400℃/ h rで
降温した。炉心管内のPO9は挿入した安定化ジルコニ
ア酸素センサーにより測定した。第2図に焼成時のマグ
ネシャ磁器容器の構造を、第3図に炉心管内部をそれぞ
れ断面図で示す。Nb2O5, TiO2, NiO, WOs, CIJ20
was used. After correcting the purity of these, a predetermined amount was weighed and mixed in a ball mill for 17 hours using zirconia cobblestones and pure water as a solvent. This was filtered by suction to separate most of the water, then dried, and then thoroughly crushed in a Raikai machine, after which 5 wt% of water was added to the powder amount, and the diameter was 60 m.
Molding pressure 500kg/cm to form a cylinder with a height of about 50mm
It was molded with 2. This was placed in an aluminum crucible, covered with a homogeneous lid, and calcined at 680°C to 760°C for 2 hours. Next, the calcined product was roughly crushed in an alumina mortar, and further crushed in a ball mill using zirconia cobblestones and pure water as a solvent for 17 hours, filtered under suction to remove most of the moisture, and then dried. After repeating the above calcining, crushing, and drying several times, a 6 wt% aqueous solution of polyvinyl alcohol was added to the powder to make 6 wt% of the powder.
wt% was added, granulated through a 32 mesh sieve, and molded at a molding pressure of 1000 kg/cm2. The molded product was heated to 700° C. in air and held for 1 hour to burn out the polyvinyl alcohol content. This was transferred to a Magnesia porcelain container in which about 173 of the volume of the calcined powder was spread, and about 1 mm of 200 mesh MgO powder was spread over it, covered with a homogeneous lid, and inserted into the core tube of a tubular electric furnace. After degassing with a rotary pump, it was replaced with a N2H2-H20 mixed gas, and the oxygen partial pressure (PO2) at the firing temperature was 1.
While adjusting the mixture ratio of N2 and H2 gas to obtain oxlo-8 atm, the mixed gas was flowed at 400℃/ to the specified temperature.
The temperature was raised at 400°C/hr, held for 2 hours, and then lowered at 400°C/hr. PO9 in the reactor core tube was measured by an inserted stabilized zirconia oxygen sensor. FIG. 2 shows the structure of the Magnesia porcelain container during firing, and FIG. 3 shows a cross-sectional view of the inside of the furnace tube.
第2図において1はマグネシア容器であり、その上部は
マグネシア容器蓋2で封じた。マグネシア容器1の下部
には仮焼粉3を配置し、その上にマグネシア紛24を配
置した。さらにその上に試料5を配置した。In FIG. 2, 1 is a magnesia container, the upper part of which is sealed with a magnesia container lid 2. Calcined powder 3 was placed in the lower part of magnesia container 1, and magnesia powder 24 was placed on top of it. Further, sample 5 was placed on top of it.
第2図のように準備されたマグネシア容器1を第3図の
ように炉心管6内に配置した。7は安定化ジルコニア酸
素センサーである。The magnesia container 1 prepared as shown in FIG. 2 was placed in the furnace core tube 6 as shown in FIG. 7 is a stabilized zirconia oxygen sensor.
焼成物は厚さIIIIII+の板状に切断し、両面にC
r−Auを蒸着し、誘電率、tanδを1ktlz、1
v/m1の電界下で測定した。また抵抗率は1kV/聰
の電圧を印加後1分値から求めた。The fired product was cut into plates with a thickness of III+, and both sides were coated with C.
r-Au was deposited, and the dielectric constant, tan δ, was 1 ktlz, 1
Measurements were made under an electric field of v/m1. Further, the resistivity was determined from the value 1 minute after applying a voltage of 1 kV/voltage.
なお焼成温度は焼成物の密度がもっとも大きくなる温度
とした。The firing temperature was set to the temperature at which the density of the fired product was the highest.
表1に、本発明の組成範囲および周辺組成の成分(a、
x、7+ Zは、P b (Mgxts Nbzz3)
XTiy(Nitz* Wst2>zo*均と表したと
きの値]、低酸素分圧雰囲気で焼成したときの焼成温度
、誘電率、誘電率の温度変化率(20℃に対する)、t
anδ、抵抗率、密度を示した。Table 1 shows the composition range of the present invention and the peripheral composition components (a,
x, 7+ Z is P b (Mgxts Nbzz3)
XTiy (value expressed as Nitz*Wst2>zo*average), firing temperature when fired in a low oxygen partial pressure atmosphere, dielectric constant, temperature change rate of dielectric constant (relative to 20°C), t
anδ, resistivity, and density are shown.
第1図は表1に示した各試料を、P b@ T i O
2+@Pba (Mgx/s Nbqt3)02 +a
Pb*・(N i 1 / 2W1/2)O2 )
02 +a を端成分とする三角組成図中に示したも
ので、斜線の範囲が発明の範囲である。Figure 1 shows each sample shown in Table 1 as P b@T i O
2+@Pba (Mgx/s Nbqt3)02 +a
Pb*・(N i 1/2W1/2)O2)
This is shown in a triangular composition diagram with 02 +a as the end member, and the shaded area is the scope of the invention.
発明範囲外の組成物では、aが0.985より小さいと
副成分として銅酸化物を添加しても焼成温度が1100
℃より高くなるか、1100℃より焼成温度が低くなる
まで鋼酸化物を添加すると誘電率が低下する、もしくは
抵抗率が低下する難点を有しており、1100より大き
くなると誘電率および抵抗率が低下する難点を有する。In a composition outside the scope of the invention, if a is smaller than 0.985, the firing temperature will be 1100°C even if copper oxide is added as a subcomponent.
If steel oxide is added until the firing temperature is higher than 1100℃ or lower than 1100℃, the dielectric constant or resistivity will decrease. It has the disadvantage of decreasing.
副成分の鋼酸化物が0.03wt$より小さいと焼成温
度低下の改善効果が現れず、0.65wt$より大きく
なると誘電特性と(に誘電率と抵抗率の低下が大きくな
る。またx、y、zが限定の範囲外の組成物はキュリ一
点が室温から大きくはずれ誘電率が低(なる、もしくは
誘電率の温度変化率が太きなる難点を有している。特許
請求の範囲内の組成物では前記の問題がいずれも克服さ
れている。If the amount of steel oxide as a subcomponent is less than 0.03 wt$, the improvement effect of lowering the firing temperature will not appear, and if it is more than 0.65 wt$, the dielectric properties and dielectric constant and resistivity will decrease significantly. Compositions in which y and z are outside the specified ranges have the disadvantage that the Curie point greatly deviates from room temperature and the dielectric constant becomes low (or the rate of change in dielectric constant with temperature increases). The composition overcomes both of the above problems.
なお焼成雰囲気として選択した低酸素分圧雰囲気PO2
; 1.OxlO−eatw は焼成温度における銅
の平衡酸素分圧より低く金属はほとんど酸化しないと考
えられる。Note that the low oxygen partial pressure atmosphere PO2 selected as the firing atmosphere
;1. It is considered that OxlO-eatw is lower than the equilibrium oxygen partial pressure of copper at the firing temperature, and the metal is hardly oxidized.
発明の効果
本発明によれば低酸素分圧雰囲気1100℃以下の焼成
で積層コンデンサ素子として高信頼性を得るためのチ密
で抵抗率の高い焼結体が得られ、とくに本発明の副成分
の添加により焼成温度が低下し焼成時の酸素分圧の制御
が容易になる。このため内部電極としてCuなとの卑金
属材料を用いた積層コンデンサ素子に本発明の組成物を
用いた場合、電気的特性を損なうことなく、より安定な
製造条件で素子が製造でき、量産性が向上する。Effects of the Invention According to the present invention, a dense and highly resistive sintered body for obtaining high reliability as a multilayer capacitor element can be obtained by firing at 1100° C. or lower in a low oxygen partial pressure atmosphere. By adding , the firing temperature is lowered and the oxygen partial pressure during firing can be easily controlled. Therefore, when the composition of the present invention is used in a multilayer capacitor element using a base metal material such as Cu as the internal electrode, the element can be manufactured under more stable manufacturing conditions without impairing the electrical characteristics, and mass production is improved. improves.
第1図は本発明に係る磁器組成物の成分組成を示す三角
組成図、第2図は焼成時に磁器を入れるマグネシャ容器
の断面図、第3図は焼成時の炉心管内の断面図を示す。
l・・・マグネシャ容器、2・・・マグネシャ容器蓋、
3・・・仮焼粉、4・・・マグネシア粉、5・・・試料
、6・・・炉心管、7・・・安定化ジルコニア酸素セン
サー。
代理人の氏名 弁理士 中尾敏男 ほか1名第1図
Pbn(Ni+/xW+/2)Ox+a z
PbaTi02+s第 1 図
第3図FIG. 1 is a triangular composition diagram showing the component composition of the porcelain composition according to the present invention, FIG. 2 is a cross-sectional view of a magnesia container in which the porcelain is placed during firing, and FIG. 3 is a cross-sectional view of the inside of the furnace tube during firing. l...Magnesha container, 2...Magnesha container lid,
3... Calcined powder, 4... Magnesia powder, 5... Sample, 6... Furnace tube, 7... Stabilized zirconia oxygen sensor. Name of agent: Patent attorney Toshio Nakao and one other person Figure 1 Pbn (Ni+/xW+/2)Ox+a z
PbaTi02+sFigure 1Figure 3
Claims (1)
Ti_y(Ni_1_/_2W_1_/_2)_zO_
2_+_aで表される組成を有し(ただしx+y+z=
1)、aが 0.985≦a≦1.110 の範囲にあり、この範囲内の各aの値に対し、Pb_a
(Mg_1_/_3Nb_2_/_3)O_2_+_a
、Pb_aTiO_2_+_a、Pb_a(Ni_1_
/_2W_1_/_2)O_2_+_aを頂点とする三
角座標において下記組成点A、B、C、D、E、 A;x=0.950y=0.025z=0.025B;
x=0.850y=0.125z=0.025C;x=
0.100y=0.060z=0.300D;x=0.
100y=0.400z=0.500E;x=0.90
0y=0.025z=0.075を頂点とする五角形の
領域内にある組成物に対し、副成分として、銅酸化物を
Cu_2O換算の重量%で0.03〜0.65%含有す
ることを特徴とした誘電体磁器組成物。[Claims] Pb_a(Mg_1_/_3Nb_2_/_3)_x
Ti_y(Ni_1_/_2W_1_/_2)_zO_
It has a composition represented by 2_+_a (where x+y+z=
1), a is in the range 0.985≦a≦1.110, and for each value of a within this range, Pb_a
(Mg_1_/_3Nb_2_/_3)O_2_+_a
, Pb_aTiO_2_+_a, Pb_a(Ni_1_
/_2W_1_/_2) In the triangular coordinates with O_2_+_a as the vertex, the following composition points A, B, C, D, E, A; x = 0.950y = 0.025z = 0.025B;
x=0.850y=0.125z=0.025C;x=
0.100y=0.060z=0.300D;x=0.
100y=0.400z=0.500E;x=0.90
For the composition within the pentagonal region with 0y = 0.025z = 0.075 as the apex, it is assumed that copper oxide is contained as a subcomponent in an amount of 0.03 to 0.65% by weight in terms of Cu_2O. Characteristic dielectric porcelain composition.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62074629A JPH0821260B2 (en) | 1987-03-27 | 1987-03-27 | Dielectric porcelain composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62074629A JPH0821260B2 (en) | 1987-03-27 | 1987-03-27 | Dielectric porcelain composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63239708A true JPS63239708A (en) | 1988-10-05 |
JPH0821260B2 JPH0821260B2 (en) | 1996-03-04 |
Family
ID=13552680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62074629A Expired - Lifetime JPH0821260B2 (en) | 1987-03-27 | 1987-03-27 | Dielectric porcelain composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0821260B2 (en) |
-
1987
- 1987-03-27 JP JP62074629A patent/JPH0821260B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0821260B2 (en) | 1996-03-04 |
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