JPS63237204A - Magneto-resistance effect head - Google Patents
Magneto-resistance effect headInfo
- Publication number
- JPS63237204A JPS63237204A JP7205487A JP7205487A JPS63237204A JP S63237204 A JPS63237204 A JP S63237204A JP 7205487 A JP7205487 A JP 7205487A JP 7205487 A JP7205487 A JP 7205487A JP S63237204 A JPS63237204 A JP S63237204A
- Authority
- JP
- Japan
- Prior art keywords
- soft magnetic
- amorphous soft
- layer
- head
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000694 effects Effects 0.000 title abstract description 5
- 230000005291 magnetic effect Effects 0.000 claims abstract description 80
- 239000000696 magnetic material Substances 0.000 claims abstract description 18
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 6
- 239000004020 conductor Substances 0.000 abstract description 17
- 229910019586 CoZrTa Inorganic materials 0.000 abstract description 4
- 239000010410 layer Substances 0.000 abstract 6
- 230000004043 responsiveness Effects 0.000 abstract 2
- 238000010030 laminating Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 14
- 230000005415 magnetization Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910000889 permalloy Inorganic materials 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000000700 radioactive tracer Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000005330 Barkhausen effect Effects 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は磁気記憶媒体に書込まれた磁気的情報を、磁気
抵抗効果を利用して情報の読み出しを行う強磁性磁気抵
抗効果素子（以下、ＭＲ素子と略す）を具備した磁気抵
抗効果ヘッド（以下、ＭＲヘッドと略す）に関するもの
である。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a ferromagnetic magnetoresistive element (hereinafter referred to as "ferromagnetic magnetoresistive element") that reads magnetic information written on a magnetic storage medium using the magnetoresistive effect. The present invention relates to a magnetoresistive head (hereinafter abbreviated as MR head) equipped with a magnetoresistive head (hereinafter abbreviated as MR head).
（従来の技術）
周知の如く、ＭＲ素子を磁気記憶媒体に書き込まれた磁
気的情報に対して、線形応答性を呈する高効率の再生用
ヘッドとして使用する場合には、ＭＲ素子に流すセンス
電流工とＭＲ素子の磁化Ｍの成す角度Ｏ（以下、バイア
ス角度と呼ぶ）を所定の値（望ましくは４５度）に設定
するバイアス手段を具備しなければならない。(Prior Art) As is well known, when an MR element is used as a highly efficient reproducing head exhibiting linear response to magnetic information written on a magnetic storage medium, a sense current flowing through the MR element is used. A bias means must be provided for setting the angle O formed by the magnetization M and the magnetization M of the MR element (hereinafter referred to as the bias angle) to a predetermined value (preferably 45 degrees).
上述のバイアス手段としては、種々の方法が開示されて
いるが、この中で実願昭５９−０４８２０１に開示され
たＭＲヘッドにおいては、ＭＲ素子上に非磁性導体層と
非晶質軟磁性体層とを順次積層した構造により、良好な
バイアス角度θが得られ、線形応答性に優れたＭＲヘッ
ドが実現できることが示されている。即ち第４図に示し
たように、ガラス、フェライト等から成る表面の滑らか
な絶縁性基板（図示せず）上に、スパッタ法あるいは蒸
着法により、強磁性体から成るＭＲ素子１（例えば膜厚
２００〜５００人のＮｉ−Ｆｅ合金）を形成し、前記Ｍ
Ｒ素子１上にＴｉ、Ｍｏ、Ｃｒ、Ｔａ等の非磁性導体層
２を同様の方法で形成し、更に前記非磁性導体層２上に
非晶質軟磁性体層５を同様な方法で形成した構造を有す
るＭＲヘッドを開示している。ここで、６はＭＲ素子１
、非磁性導体層２及び非晶質軟磁性体層５の積層体に通
電する為の端子である。Various methods have been disclosed as the above-mentioned bias means, but among these, in the MR head disclosed in Utility Model Application No. 59-048201, a non-magnetic conductor layer and an amorphous soft magnetic material are provided on the MR element. It has been shown that a structure in which layers are sequentially laminated can provide a good bias angle θ and realize an MR head with excellent linear response. That is, as shown in FIG. 4, an MR element 1 made of a ferromagnetic material (for example, a film with a thickness of 200-500 Ni-Fe alloy) and the M
A non-magnetic conductor layer 2 of Ti, Mo, Cr, Ta, etc. is formed on the R element 1 in the same manner, and an amorphous soft magnetic layer 5 is further formed on the non-magnetic conductor layer 2 in the same manner. An MR head having a structure is disclosed. Here, 6 is MR element 1
, is a terminal for supplying current to the laminated body of the nonmagnetic conductor layer 2 and the amorphous soft magnetic layer 5.
この様なＭＲヘッドにおいては、端子６から供給される
センス電流工は、ＭＲ素子１のみならず非磁性導体層２
及び非晶質軟磁性体層５にも分流する。In such an MR head, the sense current supplied from the terminal 6 is applied not only to the MR element 1 but also to the nonmagnetic conductor layer 2.
The current is also shunted to the amorphous soft magnetic material layer 5.
従って、この様な構造においては、ＭＲ素子１及び非磁
性導体層２に分流したセンス電流■により、非晶質軟磁
性体層５の面内を通り且つセンス電流■の方向と垂直方
向の磁界が発生し、この磁界により非晶質軟磁性体層５
の磁化方向が回転する。この為、非晶質軟磁性体層５に
おける磁化は、非晶質軟磁性体層５の周囲に前記磁化の
方向とは逆方向の磁界を生じ、その一部はＭＲ素子１に
印加される。一方、非晶質軟磁性体層５及び非磁性導体
層２に分流したセンス電流Ｉにより１、ＭＲ１素子１の
面内を通り、センス電流Ｉの方向と垂直方向の磁界が生
じ、この磁界の方向は前述の非晶質軟磁性体層５の磁化
によって発生する磁界の方向と一致する。つまり、非晶
質軟磁性体層５の磁化によって発生する磁界とセンス電
流■によって生じる磁界が、ＭＲ素子１にバイアス磁界
として印加される。このバイアス磁界は、ＭＲ素子１の
磁化をセンス電流Ｉに対して回転させ、ＭＲ素子のバイ
アス角度θを所定の値（理想的には４５度）とし、線形
応答性に優れたＭＲヘッドを実現する。Therefore, in such a structure, the sense current (2) shunted to the MR element 1 and the non-magnetic conductor layer 2 generates a magnetic field that passes within the plane of the amorphous soft magnetic layer 5 and in a direction perpendicular to the direction of the sense current (3). is generated, and this magnetic field causes the amorphous soft magnetic layer 5 to
The magnetization direction of is rotated. Therefore, the magnetization in the amorphous soft magnetic layer 5 generates a magnetic field around the amorphous soft magnetic layer 5 in a direction opposite to the direction of the magnetization, a part of which is applied to the MR element 1. . On the other hand, the sense current I divided into the amorphous soft magnetic layer 5 and the nonmagnetic conductor layer 2 generates a magnetic field that passes within the plane of the MR1 element 1 and is perpendicular to the direction of the sense current I. The direction coincides with the direction of the magnetic field generated by the magnetization of the amorphous soft magnetic layer 5 described above. In other words, a magnetic field generated by the magnetization of the amorphous soft magnetic layer 5 and a magnetic field generated by the sense current (2) are applied to the MR element 1 as a bias magnetic field. This bias magnetic field rotates the magnetization of the MR element 1 with respect to the sense current I, sets the bias angle θ of the MR element to a predetermined value (ideally 45 degrees), and realizes an MR head with excellent linear response. do.
（発明が解決しようとする問題点）
ところで、前述の構造、即ちＭＲ素子１、非磁性導体層
２及び非晶質軟磁性体層５を積層した構造を有するＭＲ
ヘッドにおいては、非晶質軟磁性体層５としてＣｏＺｒ
、ＣｏＺｒＮｂ等を用いた場合、これらの異方性磁界Ｈ
ｋが大きいため通常のセンス電流Ｉの範囲（５〜２０ｍ
Ａ）では、非晶質軟磁性体層５の磁化の方向が十分に回
転せず、良好なバイアスレベルを実現できなかった。こ
の為、ＭＲヘッドの線形応答性が損なわれ再生効率が低
・下するという問題点があった。(Problems to be Solved by the Invention) By the way, an MR having the above-described structure, that is, a structure in which the MR element 1, the nonmagnetic conductor layer 2, and the amorphous soft magnetic layer 5 are laminated.
In the head, CoZr is used as the amorphous soft magnetic layer 5.
, CoZrNb, etc., these anisotropic magnetic fields H
Since k is large, the range of normal sense current I (5 to 20 m
In A), the direction of magnetization of the amorphous soft magnetic layer 5 did not rotate sufficiently, and a good bias level could not be achieved. For this reason, there is a problem that the linear response of the MR head is impaired and the reproduction efficiency is lowered.
一方、異方性磁界Ｈｋの大きな非晶質軟磁性材料を非晶
質軟磁性体層５として用い、しかも良好なバイアスレベ
ルを実現する一つσ２手段として、センス電流の値を大
きくすることが考えられるが、このことはセンス電流に
よる発熱の増加をもたらし、ＭＲ素子の電気抵抗の熱的
なドリフトや熱雑音を生じＭＲヘッドの特性を損なうも
のであった。On the other hand, one way to achieve a good bias level by using an amorphous soft magnetic material with a large anisotropic magnetic field Hk as the amorphous soft magnetic layer 5 is to increase the value of the sense current. Although conceivable, this resulted in an increase in heat generation due to the sense current, causing thermal drift in the electrical resistance of the MR element and thermal noise, impairing the characteristics of the MR head.
又、発熱による断線も時として生じデバイスの信頼性を
損ねていた。In addition, disconnection due to heat generation sometimes occurs, impairing the reliability of the device.
更に、非晶質軟磁性体層５となる非晶質軟磁性材料を成
膜後、困難軸方向に磁界を印加しながら熱処理し、異方
性磁界Ｈｋを弱めるという手段も考えられるが、磁界中
の熱処理の為、ＭＲ素子となるＮｉＦｅ膜に磁気的な分
散性が生じ、バルクハウゼンノイズが増加すると言う問
題があった。又、熱処理中にＭＲ素子１、非磁性導体層
２あるいは非晶質軟磁性体層５の各層間で相互拡散を起
こし、ＭＲ素子１あるいは非晶質軟磁性体層５の磁気特
性が劣化すると言う問題点もあった。Furthermore, after forming the amorphous soft magnetic material that will become the amorphous soft magnetic layer 5, heat treatment may be performed while applying a magnetic field in the hard axis direction to weaken the anisotropic magnetic field Hk. Due to the heat treatment inside, magnetic dispersion occurs in the NiFe film that becomes the MR element, resulting in an increase in Barkhausen noise. Also, if mutual diffusion occurs between the MR element 1, the non-magnetic conductor layer 2, or the amorphous soft magnetic layer 5 during heat treatment, and the magnetic properties of the MR element 1 or the amorphous soft magnetic layer 5 deteriorate. There were some problems as well.
従って、通常のセンス電流■の範囲（５〜２０ｍＡ）で
磁化が回転し、ＭＲ素子１に十分なバイアスレベルを付
与するため、異方性磁界Ｈｋが小さな軟磁性材料を非晶
質軟磁性体層５として用いることが問題の本質的な解決
を図るために重要である。Therefore, in order to rotate the magnetization in the normal sense current range (5 to 20 mA) and provide a sufficient bias level to the MR element 1, the soft magnetic material with a small anisotropic magnetic field Hk is replaced with an amorphous soft magnetic material. It is important to use it as layer 5 in order to essentially solve the problem.
（問題点を解決するための手段）
本発明によれば、強磁性磁気抵抗効果素子と非晶質軟磁
性体層とが非磁性導体層を介して積層された構造を有し
、しかも前記非晶質軟磁性体層の異方性磁界Ｈｋが、８
Ｏｅ未満であることを特徴とする磁気抵抗効果ヘッドが
得られる。(Means for Solving the Problems) According to the present invention, the ferromagnetic magnetoresistive element and the amorphous soft magnetic material layer are laminated with a nonmagnetic conductive layer interposed therebetween, and the non-magnetic The anisotropic magnetic field Hk of the crystalline soft magnetic layer is 8
A magnetoresistive head characterized by less than Oe can be obtained.
（作用）
第２図は本発明の係わるＭＲヘッドのバイアスレベルと
非晶質軟磁性体層との関係を示す計算機シミュレーショ
ン結果である。ここで、センス電流の値は１０ｍＡとし
、ＭＲ素子の膜厚は４００人、飽和磁化Ｍｓは８００ｅ
ｍｕ／ｃｃ、異方性磁界Ｈｋは４０ｅ、比抵抗ｐは２０
ＰΩ・ａｍ、抵抗変化率Δｐ／ｐは２％であり、非磁性
導体層の膜厚は２００人、ｐは５０１１Ω・ｃｍとした
。又、非晶質軟磁性体層の膜厚は３００人、飽和磁化Ｍ
ｓは８００ｅｍｕ／ｃｃ、比抵抗ｐは１００ＰΩ−ａｍ
とした。又、バイアスレへルの定義は、第３図に示した
様に、ＭＲ素子が十分飽和するのに足る±Ｈ０の外部磁
界Ｈを印加した時の最大抵抗変化ΔＲｍａｘと、外部磁
界が０の時と±Ｈ０の外部磁界を与えた時の抵抗の差Δ
Ｒとの比とした。即ち、
バイアスレベル＝Δ＆ΔＲｍａｘである。(Function) FIG. 2 is a computer simulation result showing the relationship between the bias level and the amorphous soft magnetic layer of the MR head according to the present invention. Here, the value of the sense current is 10 mA, the film thickness of the MR element is 400 mm, and the saturation magnetization Ms is 800 e.
mu/cc, anisotropic magnetic field Hk is 40e, resistivity p is 20
PΩ·am and resistance change rate Δp/p were 2%, the thickness of the nonmagnetic conductor layer was 200, and p was 5011Ω·cm. In addition, the thickness of the amorphous soft magnetic layer is 300 mm, and the saturation magnetization M
s is 800 emu/cc, specific resistance p is 100 PΩ-am
And so. Also, as shown in Figure 3, the definition of bias level is the maximum resistance change ΔRmax when an external magnetic field H of ±H0, which is sufficient to saturate the MR element, is applied, and the maximum resistance change ΔRmax when the external magnetic field is 0. The difference in resistance Δ when an external magnetic field of ±H0 is applied
It was taken as the ratio to R. That is, bias level=Δ&ΔRmax.
第２図より明らかなとおり、異方性磁界Ｈｋの値にして
約８Ｏｅ以上では、バイアスレベルにして約０．６以上
となりＭＲ素子に不十分なバイアスしか印加されないこ
とがわかる。従って、非晶質軟磁性体層をなす非晶質軟
磁性材料の異方性磁界Ｈｋを８Ｏｅ未満とすることで、
優れた線形応答性と再生効率を有するＭＲヘッドが得ら
れる。As is clear from FIG. 2, when the anisotropic magnetic field Hk is about 8 Oe or more, the bias level becomes about 0.6 or more, and an insufficient bias is applied to the MR element. Therefore, by setting the anisotropic magnetic field Hk of the amorphous soft magnetic material forming the amorphous soft magnetic layer to less than 8 Oe,
An MR head with excellent linear response and reproduction efficiency can be obtained.
本発明者らは、上述のシミュレーション結果を参考にし
て、種々のＣｏ金属系非晶質軟磁性材料を蒸着法あるい
はスパッタ法を用いて薄膜化し、その異方性磁界Ｈｋを
ＶＳＭ（振動試料磁力計）あるいはＢ−Ｈカーブトレー
サを用いて測定した結果、表１に示したような結果を得
た。Referring to the above simulation results, the present inventors thinned various Co metal-based amorphous soft magnetic materials using vapor deposition or sputtering methods, and applied the anisotropic magnetic field Hk to VSM (vibrating sample magnetic force). As a result of measurement using a B-H curve tracer or a B-H curve tracer, the results shown in Table 1 were obtained.
表に示したように、非晶質軟磁性材料としてＣｏＺｒＭ
ｏ 、 ＣｏＺｒＴａ、あるいはＣｏＴａにおいて５０
ｅ〜６０ｅの異方性磁界Ｈｋが得られており、第２図に
示したシミュレーション結果を満足している。As shown in the table, CoZrM is used as an amorphous soft magnetic material.
o, CoZrTa, or 50 in CoTa
An anisotropic magnetic field Hk of e to 60e was obtained, satisfying the simulation results shown in FIG.
従って、これらの非晶質軟磁性材料を非晶質軟磁性体層
５として用いることにより、バイアス角度θが略４５度
の良好なバイアスレベルが得られ、高い再生効率を持つ
ＭＲヘッドが実現される。Therefore, by using these amorphous soft magnetic materials as the amorphous soft magnetic layer 5, a good bias level with a bias angle θ of approximately 45 degrees can be obtained, and an MR head with high reproduction efficiency can be realized. Ru.
（実施例１）
第１図は、本発明の一実施例を示す図である。第１図に
おいて、ガラス基板（図示せず）上に蒸着法を用いて、
ＭＲ素子１となる、膜厚４００人のパーマロイ（Ｎｉ８
２％−Ｆｅ１８％、重量％）膜を成膜した。尚、蒸着時
には１０００ｅの磁界を永久磁石で印加しパーマロイ膜
に一軸異方性を付与した。ついで、同じく蒸着法を用い
て、非磁性導体層２となる膜厚２００人のＴｉ膜を前記
パーマロイ膜上に成膜した。更に、非晶質軟磁性体層と
して膜厚３００人、異方性磁界Ｈｋ５０ｅのＣｏＺｒＭ
ｏ層７を、前述のＴｉ膜上に蒸着法を用いて成膜した。(Example 1) FIG. 1 is a diagram showing an example of the present invention. In FIG. 1, using a vapor deposition method on a glass substrate (not shown),
MR element 1 is made of permalloy (Ni8) with a film thickness of 400.
2%-Fe18%, weight %) film was formed. During the deposition, a magnetic field of 1000 e was applied using a permanent magnet to impart uniaxial anisotropy to the permalloy film. Then, using the same vapor deposition method, a Ti film having a thickness of 200 mm and serving as the nonmagnetic conductor layer 2 was formed on the permalloy film. Furthermore, CoZrM with a film thickness of 300 mm and an anisotropic magnetic field of Hk50e was used as an amorphous soft magnetic layer.
The o layer 7 was formed on the Ti film described above using a vapor deposition method.
その後、この積体上に所定のフォトレジストパターンを
形成し、Ａｒガス雰囲気中でイオンエツチングを行い、
長さ５０ｐｍ、幅５１１ｍの矩形状のパターンに加工し
た。ここで、エツチング条件は、加速電圧：５００ＶＳ
Ａｒガス圧カニＩ Ｘ １０−’Ｔｏｒｒである。After that, a predetermined photoresist pattern is formed on this stack, and ion etching is performed in an Ar gas atmosphere.
It was processed into a rectangular pattern with a length of 50 pm and a width of 511 m. Here, the etching conditions are acceleration voltage: 500VS
The Ar gas pressure is I x 10-' Torr.
ついで、前述の積層体にセンス電流■を供給する端子６
を集積化薄膜技術を用いて形成し、ＭＲヘッドを作製し
た。尚、端子６は、ＴｉとＡｕの積層膜を使用し、膜厚
は各々５０人、０．５￥１ｍである。Next, a terminal 6 for supplying the sense current ■ to the above-mentioned multilayer body
was formed using integrated thin film technology to produce an MR head. Note that the terminal 6 uses a laminated film of Ti and Au, and the film thickness is 50 people and 0.5 yen 1 m each.
以上のような構成を持つ本実施例によるＭＲヘッドにお
いては、センス電流Ｉが５〜１５ｍＡでＭＲヘッド１の
バイアス角度θが略４５度で設定出来ることが確認され
、良好な線形応答性と高い再生効率を有するＭＲヘッド
が実現された。In the MR head according to this embodiment having the above configuration, it was confirmed that the bias angle θ of the MR head 1 could be set at approximately 45 degrees when the sense current I was 5 to 15 mA, and the result showed good linear response and high An MR head with high reproduction efficiency has been realized.
（実施例２）
非晶質軟磁性体層を膜厚３００人、異方性磁界Ｈｋ６０
ｅのＣｏＺｒＴａ層とした以外は実施例１と全く同様に
して、ＭＲヘッドを作製した。(Example 2) The thickness of the amorphous soft magnetic layer was 300, and the anisotropic magnetic field was Hk60.
An MR head was manufactured in the same manner as in Example 1 except that the CoZrTa layer of e was used.
本実施例のＭＲヘッドにおいては、１０〜１５ｍＡのセ
ンス電流ＩでＭＲ素子のバイアス角度θが、４０〜４５
度の範囲で設定できることが確認され実施例１の場合と
同様に、良好な線形応答性と高い再生効率を有するＭＲ
ヘッドが実現された。In the MR head of this embodiment, the bias angle θ of the MR element is 40 to 45 mA with a sense current I of 10 to 15 mA.
It has been confirmed that the setting can be made within the range of
The head was realized.
（実施例３）・
非晶質軟磁性体層を膜厚３００人、異方性磁界Ｈｋ６０
ｅのＣｏＴａ層とした以外は実施例１ないしは２と全く
同様にして、ＭＲヘッドを作製した。(Example 3) The thickness of the amorphous soft magnetic layer was 300, and the anisotropic magnetic field was Hk60.
An MR head was produced in exactly the same manner as in Example 1 or 2, except that the CoTa layer of e was used.
本実施例のＭＲヘッドにおいては、１０〜１５ｍＡのセ
ンス電流■でＭＲ素子のバイアス角度０が、４０〜４５
度の範囲で設定できることが確認され実施例工ないし２
の場合と同様に、良好な線形応答性と高い再生効率を有
するＭＲヘッドが実現された。In the MR head of this example, the bias angle 0 of the MR element is 40 to 45 mA with a sense current of 10 to 15 mA.
It has been confirmed that it can be set within the range of
As in the case of , an MR head with good linear response and high reproduction efficiency was realized.
（比較例）
非晶質軟磁性体層を膜厚３００人、異方性磁界Ｈｋ１６
０ｅのＣｏＺｒ層とした以外は実施例１，２あるいは３
と全く同様にして、ＭＲヘッドを作製した。この様なＭ
Ｒヘッドにおいては、センス電流３５ｍＡ程度流しても
十分なバイアスがＭＲ素子に印加されず、本発明による
ＭＲヘッドに比較して、再生効率が３０〜５０％程度小
さく、実用に供しないことが明らかとなった。(Comparative example) The thickness of the amorphous soft magnetic layer is 300, and the anisotropic magnetic field is Hk16.
Example 1, 2 or 3 except that the CoZr layer of 0e was used.
An MR head was produced in exactly the same manner. M like this
In the R head, even if a sense current of about 35 mA is applied, a sufficient bias is not applied to the MR element, and the reproduction efficiency is about 30 to 50% lower than that of the MR head according to the present invention, so it is clear that it cannot be put to practical use. It became.
又、ＣｏＴｉ、 ＣｏＨｆ１ＣｏＺｒＮｂ、 ＣｏＺｒ
Ｈｆ、 ＣｏＺｒＴｉを非晶質軟磁性体層として用いた
場合も、十分なバイアスがＭＲ素子に印加されず、本発
明によるＭＲヘッドに較べて再生効率が小さかった。Also, CoTi, CoHf1CoZrNb, CoZr
Even when Hf or CoZrTi was used as the amorphous soft magnetic layer, sufficient bias was not applied to the MR element, and the reproduction efficiency was lower than that of the MR head according to the present invention.
（発明の効果）
以上述べてきたように、本発明によればＭＲ素子と非晶
質軟磁性体層を非磁性導体層を介して積層し、しかも異
方性磁界ＨｋがＭＲ素子をなすＮｉＦｅ膜と同程度に小
さなＣｏＺｒＭｏ、 ＣｏＺｒＴａあるいはＣｏＴａ膜
を、非晶質軟磁性体層として用いることにより、１５ｍ
Ａ程度の小さなバイアス電流でも良好なバイアスレベル
が得られ、優れた線形応答性と高い再生効率を持つＭＲ
ヘッドが実現される。(Effects of the Invention) As described above, according to the present invention, an MR element and an amorphous soft magnetic layer are laminated with a nonmagnetic conductor layer interposed therebetween, and the anisotropic magnetic field Hk is applied to the NiFe layer forming the MR element. By using a CoZrMo, CoZrTa or CoTa film as small as the film as an amorphous soft magnetic layer,
MR that can obtain a good bias level even with a small bias current of about A, and has excellent linear response and high reproduction efficiency.
The head is realized.
尚、以上の実施例ではＭＲ素子、非磁性導体層、非晶質
軟磁性体層の順序で積層する例のみについて述べたが、
非晶質軟磁性体層、非磁性導体層、ＭＲ素子の順序で積
層したＭＲヘッドにおいても優れた線形応答性と高い再
生効率が得られた。又、非磁性導体層をなす材料はＴｉ
に限定されるものではなく、例えばＴａ、 Ｗ、 Ｍｏ
あるいはこれらの合金等を使用しても、本発明の意図す
るところは損なわれない。更に、ＣｏＺｒＭｏ、 Ｃｏ
ＺｒＴａあるいはＣｏＴａ層中に、これらの磁気特性、
特に異方性磁界Ｈｋを劣化させない範囲で他の元素を添
加したものを非晶質軟磁性体層−として使用しても差し
支えない。Incidentally, in the above embodiment, only the example in which the MR element, the nonmagnetic conductor layer, and the amorphous soft magnetic material layer are laminated in this order has been described;
Excellent linear response and high reproduction efficiency were also obtained in an MR head in which an amorphous soft magnetic layer, a nonmagnetic conductive layer, and an MR element were laminated in this order. Furthermore, the material forming the nonmagnetic conductor layer is Ti.
For example, Ta, W, Mo
Alternatively, even if these alloys are used, the purpose of the present invention will not be impaired. Furthermore, CoZrMo, Co
In the ZrTa or CoTa layer, these magnetic properties,
In particular, the amorphous soft magnetic material layer may be used to which other elements are added within a range that does not deteriorate the anisotropic magnetic field Hk.
第１図は本発明によるＭＲヘッドの一実施例を示す図、
第２図、第３図及び第４図は本発明を説明するための図
である。
図に於て、
１・・・ＭＲ素子、 ２・・・非磁性導体層、
半 １ 図
ｔ、ＭＲ噂トで（
半 ２１図
異方と狐胃’ＨＫ （Ｏｅ）FIG. 1 is a diagram showing an embodiment of an MR head according to the present invention;
FIG. 2, FIG. 3, and FIG. 4 are diagrams for explaining the present invention. In the figure, 1...MR element, 2...Nonmagnetic conductor layer,
Half 1 figure t, MR rumors (half 21 figure anisotropic and fox stomach'HK (Oe)
Claims (2)
非磁性導体層を介して積層された構造を有し、しかも前
記非晶質軟磁性体層の異方性磁界Ｈ＿ｋが、８Ｏｅ未満
であることを特徴とする磁気抵抗効果ヘッド。(1) It has a structure in which a ferromagnetic magnetoresistive element and an amorphous soft magnetic layer are laminated with a nonmagnetic conductive layer interposed therebetween, and the anisotropic magnetic field H_k of the amorphous soft magnetic layer is , less than 8 Oe.
ｒＴａ、またはＣｏＴａを主成分とする非晶質軟磁性材
料からなることを特徴とする特許請求の範囲第１項記載
の磁気抵抗効果ヘッド。(2) The amorphous soft magnetic layer is made of CoZrMo, CoZ
2. The magnetoresistive head according to claim 1, wherein the magnetoresistive head is made of an amorphous soft magnetic material containing rTa or CoTa as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62072054A JPH065573B2 (en) | 1987-03-25 | 1987-03-25 | Magnetoresistive effect head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62072054A JPH065573B2 (en) | 1987-03-25 | 1987-03-25 | Magnetoresistive effect head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63237204A true JPS63237204A (en) | 1988-10-03 |
| JPH065573B2 JPH065573B2 (en) | 1994-01-19 |
Family
ID=13478287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62072054A Expired - Lifetime JPH065573B2 (en) | 1987-03-25 | 1987-03-25 | Magnetoresistive effect head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065573B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02266580A (en) * | 1989-04-07 | 1990-10-31 | Nec Corp | Magnetoresistance effect element |
| JPH0366012A (en) * | 1989-08-04 | 1991-03-20 | Nec Corp | Magneto-resistance effect type head |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61242314A (en) * | 1985-04-19 | 1986-10-28 | Hitachi Ltd | Magneto-resistance effect type reproducing head |
-
1987
- 1987-03-25 JP JP62072054A patent/JPH065573B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61242314A (en) * | 1985-04-19 | 1986-10-28 | Hitachi Ltd | Magneto-resistance effect type reproducing head |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02266580A (en) * | 1989-04-07 | 1990-10-31 | Nec Corp | Magnetoresistance effect element |
| JPH0366012A (en) * | 1989-08-04 | 1991-03-20 | Nec Corp | Magneto-resistance effect type head |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH065573B2 (en) | 1994-01-19 |
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