JP2001196657A - Magnetoresistive effect element and magnetic memory using it - Google Patents
Magnetoresistive effect element and magnetic memory using itInfo
- Publication number
- JP2001196657A JP2001196657A JP2000001189A JP2000001189A JP2001196657A JP 2001196657 A JP2001196657 A JP 2001196657A JP 2000001189 A JP2000001189 A JP 2000001189A JP 2000001189 A JP2000001189 A JP 2000001189A JP 2001196657 A JP2001196657 A JP 2001196657A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic layer
- layer
- anisotropy
- effect element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は垂直磁気異方性を有
する磁性層を用いた磁気抵抗効果素子および該素子を用
いた磁気メモリに関するものである。The present invention relates to a magnetoresistive element using a magnetic layer having perpendicular magnetic anisotropy and a magnetic memory using the element.
【０００２】[0002]
【従来の技術】磁気磁性層と非磁性層を積層して得られ
る巨大磁気抵抗効果（ＧＭＲ）素子やトンネル磁気抵抗
効果（ＴＭＲ）素子は従来の異方性磁気抵抗効果（ＡＭ
Ｒ）素子と比較して大きな磁気抵抗変化率を有すること
から、磁気センサーとして高い性能が期待できる。ＧＭ
Ｒ素子については既にハードディスクドライブ（ＨＤ
Ｄ）の再生用磁気ヘッドとして実用化されている。一
方、ＴＭＲ素子はＧＭＲ素子よりも更に高い磁気抵抗変
化率を有することから、磁気ヘッドのみならず、磁気メ
モリへの応用も考えられている。2. Description of the Related Art A giant magnetoresistive (GMR) element or a tunnel magnetoresistive (TMR) element obtained by laminating a magnetic magnetic layer and a nonmagnetic layer is a conventional anisotropic magnetoresistive (AM) element.
R) High performance can be expected as a magnetic sensor because it has a larger magnetoresistance change rate than the element. GM
For the R element, a hard disk drive (HD
D) has been put to practical use as a reproducing magnetic head. On the other hand, since the TMR element has a higher magnetoresistance ratio than the GMR element, application to not only a magnetic head but also a magnetic memory is considered.
【０００３】従来のＴＭＲ素子の基本的な構成例として
特開平９―１０６５１４号公報に示されている例を図３
に示す。図３に示すように、ＴＭＲ素子は、第１の磁性
層３１、絶縁層３２、第２の磁性層３３、反強磁性層３
４を積層したものである。ここで、第１の磁性層３１お
よび第２の磁性層３３は、Ｆｅ、Ｃｏ、Ｎｉ、或はこれ
らの合金からなる強磁性体であり、反強磁性層３４は、
ＦｅＭｎ，ＮｉＭｎ等であり、絶縁層３２はＡｌ2Ｏ3で
ある。FIG. 3 shows an example of a basic structure of a conventional TMR element disclosed in Japanese Patent Application Laid-Open No. 9-106514.
Shown in As shown in FIG. 3, the TMR element includes a first magnetic layer 31, an insulating layer 32, a second magnetic layer 33, and an antiferromagnetic layer 3.
4 are laminated. Here, the first magnetic layer 31 and the second magnetic layer 33 are ferromagnetic bodies made of Fe, Co, Ni, or an alloy thereof, and the antiferromagnetic layer 34 is
FeMn, NiMn, etc., and the insulating layer 32 is Al 2 O 3 .
【０００４】また、図３の絶縁層３２をＣｕ等の導電性
を有する非磁性層に置き換えるとＧＭＲ素子となる。When the insulating layer 32 shown in FIG. 3 is replaced with a nonmagnetic layer having conductivity such as Cu, a GMR element is obtained.
【０００５】従来のＧＭＲ素子およびＴＭＲ素子では、
磁性層部分の磁化が面内方向であるため、狭トラック幅
の磁気ヘッドや高集積化磁気メモリのように素子寸法が
微細化すると、端部磁極で生じる反磁界の影響を強く受
けるようになる。このため磁性層の磁化方向が不安定と
なり、均一な磁化を維持することが困難になり、磁気ヘ
ッドおよび磁気メモリの動作不良を発生させることにな
る。In the conventional GMR element and TMR element,
Since the magnetization of the magnetic layer portion is in the in-plane direction, when the element size is reduced as in a magnetic head having a narrow track width or a highly integrated magnetic memory, the magnetic field is strongly affected by a demagnetizing field generated at an end magnetic pole. . For this reason, the magnetization direction of the magnetic layer becomes unstable, and it becomes difficult to maintain uniform magnetization, which causes a malfunction of the magnetic head and the magnetic memory.
【０００６】この欠点の解決方法として、垂直磁気異方
性を有する磁性層を用いた磁気抵抗効果素子が特開平１
１―２１３６５０号公報に開示されている。該特許の素
子構造を図４に示す。磁気抵抗効果素子は、低い保磁力
を有する垂直磁化膜からなる第１の磁性層４１と、高い
保磁力を有する垂直磁化膜からなる第２の磁性層４３の
間に非磁性層４２が挟まれた構造をしている。なお、第
１の磁性層および第２の磁性層には希土類−遷移元素合
金のフェリ磁性膜、ガーネット膜、ＰｔＣｏ、ＰｄＣｏ
などが用いられている。As a method of solving this drawback, a magnetoresistive element using a magnetic layer having perpendicular magnetic anisotropy is disclosed in Japanese Patent Application Laid-Open No. Hei.
It is disclosed in Japanese Patent Application Laid-Open No. 1-213650. FIG. 4 shows the device structure of this patent. In the magnetoresistive element, a nonmagnetic layer 42 is sandwiched between a first magnetic layer 41 made of a perpendicular magnetic film having a low coercive force and a second magnetic layer 43 made of a perpendicular magnetic film having a high coercive force. It has a structure. The first magnetic layer and the second magnetic layer have a ferrimagnetic film of a rare earth-transition element alloy, a garnet film, PtCo, PdCo.
Are used.
【０００７】この場合、端部磁極は磁性膜表面に生じる
ことから、素子の微細化に伴う反磁界の増加は抑えられ
る。従って、磁性膜の垂直磁気異方性エネルギーが端部
磁極による反磁界エネルギーよりも十分大きければ、素
子の寸法に関係なく磁化を垂直方向に安定化させること
ができる。In this case, since the end magnetic pole is formed on the surface of the magnetic film, an increase in the demagnetizing field due to miniaturization of the element can be suppressed. Therefore, if the perpendicular magnetic anisotropy energy of the magnetic film is sufficiently larger than the demagnetizing field energy by the end pole, the magnetization can be stabilized in the vertical direction regardless of the dimensions of the element.
【０００８】[0008]
【発明が解決しようとする課題】しかしながら、上記の
垂直磁気異方性を有する磁性層を用いた磁気抵抗効果素
子では磁性膜表面に端部磁極が発生する。ＧＭＲ素子や
ＴＭＲ素子に使用される非磁性層は非常に薄いため、一
方の磁性層と非磁性層の界面に発生する磁極が他方の磁
性層の磁化に及ぼす影響は非常に大きくなり、磁化を反
転することができなくなる可能性もある。従って、例え
ば磁気メモリに応用した場合には記憶情報を書き込めな
い或いは書き込んだ情報が消失すると言った問題が生じ
る。However, in the magnetoresistive element using the magnetic layer having the perpendicular magnetic anisotropy, an end pole is generated on the surface of the magnetic film. Since the nonmagnetic layer used in the GMR element and the TMR element is very thin, the magnetic pole generated at the interface between one magnetic layer and the nonmagnetic layer has a very large effect on the magnetization of the other magnetic layer. There is also a possibility that it cannot be reversed. Therefore, for example, when applied to a magnetic memory, there arises a problem that stored information cannot be written or written information is lost.
【０００９】そこで、本発明は上記課題を考慮し、磁性
層の磁化状態が絶縁層を介してもう一方の磁性層から受
ける漏れ磁界の影響を受けることなく安定に存在するこ
とのできる磁気抵抗効果素子およびそれを用いた磁気メ
モリを提供することを目的とする。In view of the foregoing, the present invention has been made in consideration of the above problem, and has a magnetoresistance effect in which the magnetization state of a magnetic layer can exist stably without being affected by a leakage magnetic field received from another magnetic layer via an insulating layer. An object is to provide an element and a magnetic memory using the element.
【００１０】[0010]
【課題を解決するための手段】本発明は、少なくとも第
１の磁性層、非磁性層、第２の磁性層から構成され、前
記第１および第２の磁性層が垂直磁気異方性を有する磁
気抵抗効果素子において、前記第１または第２の磁性層
のどちらか一方が室温付近に補償点を有するフェリ磁性
体で構成されることを特徴とする。The present invention comprises at least a first magnetic layer, a non-magnetic layer, and a second magnetic layer, wherein the first and second magnetic layers have perpendicular magnetic anisotropy. In the magnetoresistive element, one of the first and second magnetic layers is made of a ferrimagnetic material having a compensation point near room temperature.
【００１１】さらに、本発明は、前記磁気抵抗効果素子
において、前記非磁性層が絶縁体で構成されることを特
徴とする。Further, the present invention is characterized in that in the magnetoresistance effect element, the nonmagnetic layer is made of an insulator.
【００１２】また、本発明は、少なくとも第１の磁性
層、非磁性層、第２の磁性層から構成され、前記第１の
磁性層は低い保磁力および垂直磁気異方性を有する強磁
性体であり、前記第２の磁性層は高い保磁力および垂直
磁気異方性を有する強磁性体である磁気抵抗効果素子に
おいて、前記第２の磁性層は、小さな飽和磁化を有す
る、希土類−遷移金属からなる非晶質合金膜から構成さ
れることを特徴とする。The present invention also provides a ferromagnetic material having at least a first magnetic layer, a non-magnetic layer, and a second magnetic layer, wherein the first magnetic layer has a low coercive force and perpendicular magnetic anisotropy. Wherein the second magnetic layer is a ferromagnetic material having a high coercive force and a perpendicular magnetic anisotropy, wherein the second magnetic layer has a small saturation magnetization; Characterized by comprising an amorphous alloy film made of
【００１３】また、本発明は、少なくとも第１の磁性
層、非磁性層、第２の磁性層から構成され、前記第１お
よび第２の磁性層が垂直磁気異方性を有し、前記第１ま
たは第２の磁性層のどちらか一方が室温付近に補償点を
有するフェリ磁性体で構成される磁気抵抗効果素子を用
いた磁気メモリである。Further, the present invention comprises at least a first magnetic layer, a non-magnetic layer, and a second magnetic layer, wherein the first and second magnetic layers have perpendicular magnetic anisotropy. This is a magnetic memory using a magnetoresistive element in which one of the first and second magnetic layers is made of a ferrimagnetic material having a compensation point near room temperature.
【００１４】[0014]
【発明の実施の形態】以下、図をもとに本発明について
詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the drawings.
【００１５】図１に本発明の磁気抵抗効果素子の概略構
成図を示す。本発明の磁気抵抗効果素子は、第１の磁性
層１１、非磁性層１２、第２の磁性層１３で構成され
る。第１の磁性層１１および第２の磁性層１３は、いず
れも希土類金属（ＲＥ）と鉄族遷移金属（ＴＭ）の非晶
質合金垂直磁化膜からなる強磁性体、つまりフェリ磁性
体であり、ＲＥ−ＴＭ材料としては、二元合金（ＧｄＦ
ｅ、ＴｂＦｅ、ＧｄＣｏ、ＴｂＣｏなど）或は三元合金
（ＧｄＦｅＣｏ、ＴｂＦｅＣｏ、ＧｄＴｂＦｅ、ＧｄＴ
ｂＣｏなど）があげられる。FIG. 1 is a schematic structural view of a magnetoresistive element according to the present invention. The magnetoresistive element according to the present invention includes a first magnetic layer 11, a nonmagnetic layer 12, and a second magnetic layer 13. Each of the first magnetic layer 11 and the second magnetic layer 13 is a ferromagnetic material composed of an amorphous alloy perpendicular magnetization film of a rare earth metal (RE) and an iron group transition metal (TM), that is, a ferrimagnetic material. , RE-TM materials include binary alloys (GdF
e, TbFe, GdCo, TbCo) or a ternary alloy (GdFeCo, TbFeCo, GdTbFe, GdT)
bCo).
【００１６】第１の磁性層１１をメモリ層とすると、第
１の磁性層は書込み磁界により書換えできる程度に保磁
力Ｈｃが低くかつある程度の飽和磁化Ｍｓを有し、第２
の磁性層１３は第１の磁性層１１への影響を低減できか
つ外部磁界の影響を受けないように、飽和磁化Ｍｓが小
さくかつ保磁力Ｈｃが大きいものとしなければならな
い。Assuming that the first magnetic layer 11 is a memory layer, the first magnetic layer has a low coercive force Hc and a certain degree of saturation magnetization Ms to such an extent that it can be rewritten by a write magnetic field.
The magnetic layer 13 must have a small saturation magnetization Ms and a large coercive force Hc so that the influence on the first magnetic layer 11 can be reduced and the magnetic layer 13 is not affected by an external magnetic field.
【００１７】そこで、ＲＥ−ＴＭ材料の二元合金の例と
してＴｂＣｏ非晶質合金膜の室温における飽和磁化Ｍｓ
および保磁力Ｈｃの組成依存性を図２に示すと、図２か
ら明らかなように、第２の磁性層１３としてＴｂ組成が
２０〜２３ａｔ％すなわち室温で補償点近傍組成のもの
を選択すると、第２の磁性層１３は上記の条件を満足す
る。一方、第１の磁性層１１としては上記の条件を満足
するためには上記の組成範囲以外が適している。Therefore, as an example of a binary alloy of the RE-TM material, the saturation magnetization Ms of a TbCo amorphous alloy film at room temperature is considered.
FIG. 2 shows the composition dependency of the coercive force Hc. As is clear from FIG. 2, when the second magnetic layer 13 is selected to have a Tb composition of 20 to 23 at%, that is, a composition near the compensation point at room temperature, The second magnetic layer 13 satisfies the above conditions. On the other hand, in order to satisfy the above conditions, the first magnetic layer 11 has a composition other than the above composition range.
【００１８】第２の磁性層１３として補償点近傍組成を
選択すると飽和磁化Ｍｓはほとんど消失するが、フェリ
磁性体であることから、ＲＥおよびＴＭの各副格子の磁
化は十分の大きさを維持している。一方、磁気抵抗効果
は主にＴＭに依存すると考えられることから、飽和磁化
Ｍｓが消失する補償点近傍組成においても、十分大きな
磁気抵抗効果を得ることができる。When the composition near the compensation point is selected as the second magnetic layer 13, the saturation magnetization Ms almost disappears, but since it is a ferrimagnetic material, the magnetization of the RE and TM sublattices maintains a sufficient magnitude. are doing. On the other hand, since the magnetoresistance effect is considered to mainly depend on TM, a sufficiently large magnetoresistance effect can be obtained even in the composition near the compensation point where the saturation magnetization Ms disappears.
【００１９】非磁性層１２として、従来のＧＭＲ素子で
使用されているＣｕ等の導電性を有する非磁性層を用い
ることも、従来のＴＭＲ素子で使用されているＡｌ2Ｏ3
膜を用いることもできる。As the non-magnetic layer 12, a conductive non-magnetic layer such as Cu used in the conventional GMR element may be used, or the Al 2 O 3 used in the conventional TMR element may be used.
A membrane can also be used.
【００２０】しかしながら、非磁性層として酸化膜を使
用すると、磁性層に使用している希土類金属が酸化され
る危険性があることから、絶縁性の非磁性層としては、
ＡｌＮ、ＢＮ等のような窒化膜、或いはＳｉ、ダイヤモ
ンド、ＤＬＣ（ダイヤモンド・ライク・カーボン）等の
ような共有結合を有する絶縁膜を用いるのがよい。However, if an oxide film is used as the nonmagnetic layer, there is a risk that the rare earth metal used in the magnetic layer is oxidized.
It is preferable to use a nitride film such as AlN or BN, or an insulating film having a covalent bond such as Si, diamond, DLC (diamond-like carbon), or the like.
【００２１】また、従来のＧＭＲ素子およびＴＭＲ素子
と同様、非磁性層１２として絶縁層を使用した方が大き
な磁気抵抗変化率を有することができる。As in the case of the conventional GMR element and TMR element, the use of an insulating layer as the nonmagnetic layer 12 can provide a larger magnetoresistance ratio.
【００２２】第１の磁性層１１および第２の磁性層１３
は、磁性層の膜厚が薄くなりすぎると熱的エネルギーに
よる影響で超常磁性化するため、磁性層の膜厚は５０Å
以上必要であり、膜厚が厚すぎると微細な素子を加工す
ることが困難となるため、磁性層の膜厚は５０００Å以
下がよい。First magnetic layer 11 and second magnetic layer 13
Is that if the thickness of the magnetic layer becomes too thin, it becomes superparamagnetic due to the influence of thermal energy.
This is necessary. If the film thickness is too large, it becomes difficult to process a fine element. Therefore, the film thickness of the magnetic layer is preferably 5000 ° or less.
【００２３】また、前記非磁性層１２の膜厚は、ＴＭＲ
素子の場合には、非磁性層１２の膜厚が５Å以下である
と磁性層間で電気的にショートしてしまう可能性があ
り、膜厚が３０Å以上である場合、電子のトンネル現象
が起きにくくなってしまうため、５Å以上３０Å以下が
よい。一方、ＧＭＲ素子では、非磁性層１２の膜厚が厚
くなると素子抵抗が小さくなりすぎて磁気抵抗変化率も
低下するため、５０Å以下がよい。The nonmagnetic layer 12 has a thickness of TMR.
In the case of an element, if the thickness of the nonmagnetic layer 12 is 5 mm or less, there is a possibility that an electrical short circuit occurs between the magnetic layers. If the thickness is 30 mm or more, electron tunneling hardly occurs. Therefore, it is preferable that the angle be 5 ° or more and 30 ° or less. On the other hand, in the case of the GMR element, when the thickness of the nonmagnetic layer 12 is large, the element resistance becomes too small, and the magnetoresistance ratio is also reduced.
【００２４】上述では、第１の磁性層１１および第２の
磁性層１３としてフェリ磁性体であるＲＥ−ＴＭ合金を
使用したが、第１の磁性層としてはそれ以外に、ＣｏＣ
ｒ、ＣｏＰｔ等の垂直磁気異方性を有する通常の強磁性
体を使用することも可能である。In the above description, the first magnetic layer 11 and the second magnetic layer 13 are made of a ferrimagnetic RE-TM alloy, but the first magnetic layer may be made of CoC.
It is also possible to use a normal ferromagnetic material having perpendicular magnetic anisotropy such as r or CoPt.
【００２５】上記の磁気抗効果素子を磁気メモリに応用
する場合、第２の磁性層１３として補償点近傍組成を選
択していることから、保磁力Ｈｃが非常に大きくなる
が、キュリー点近傍まで加熱しながら磁界を印可するこ
とにより、容易に初期化することができる。When the above-described magnetoresistive element is applied to a magnetic memory, the composition near the compensation point is selected as the second magnetic layer 13, so that the coercive force Hc becomes very large. The initialization can be easily performed by applying a magnetic field while heating.
【００２６】[0026]
【発明の効果】以上のように、本発明によれば、素子を
微細化しても端部磁極の影響を低減することができ、漏
れ磁界による擾乱を低減することができ、垂直磁化の磁
化状態を安定に保つことができる。As described above, according to the present invention, even if the element is miniaturized, the influence of the end magnetic pole can be reduced, the disturbance due to the leakage magnetic field can be reduced, and the magnetization state of the perpendicular magnetization can be reduced. Can be kept stable.
【図１】本発明の磁気抵抗効果素子の概略構成図であ
る。FIG. 1 is a schematic configuration diagram of a magnetoresistive element of the present invention.
【図２】Ｔｂ−Ｃｏ合金の飽和磁化Ｍｓおよび保磁力Ｈ
ｃのＴｂ組成依存を示す図である。FIG. 2 shows a saturation magnetization Ms and a coercive force H of a Tb—Co alloy.
It is a figure which shows Tb composition dependence of c.
【図３】従来のＴＭＲ素子の基本的な概略構成図であ
る。FIG. 3 is a basic schematic configuration diagram of a conventional TMR element.
【図４】従来の垂直磁化を用いた磁気抵抗効果素子の概
略構成図である。FIG. 4 is a schematic configuration diagram of a conventional magnetoresistance effect element using perpendicular magnetization.
１１ 第１の磁性層 １２ 非磁性層 １３ 第２の磁性層 ３１ 第１の磁性層 ３２ 非磁性層 ３３ 第２の磁性層 ３４ 反強磁性層 ４１ 第１の磁性層 ４２ 非磁性層 ４３ 第２の磁性層 DESCRIPTION OF SYMBOLS 11 1st magnetic layer 12 non-magnetic layer 13 2nd magnetic layer 31 1st magnetic layer 32 non-magnetic layer 33 2nd magnetic layer 34 antiferromagnetic layer 41 1st magnetic layer 42 non-magnetic layer 43 2nd Magnetic layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 南方 量二 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内 Ｆターム(参考） 5D034 BA05 CA05 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Kazuji Minami 22-22, Nagaikecho, Abeno-ku, Osaka-shi, Osaka F-term (reference) 5D034 BA05 CA05
Claims (4)
２の磁性層から構成され、前記第１および第２の磁性層
が垂直磁気異方性を有する磁気抵抗効果素子において、 前記第１または第２の磁性層のどちらか一方が室温付近
に補償点を有するフェリ磁性体で構成されることを特徴
とする磁気抵抗効果素子。1. A magnetoresistive element comprising at least a first magnetic layer, a nonmagnetic layer, and a second magnetic layer, wherein the first and second magnetic layers have perpendicular magnetic anisotropy. A magnetoresistive element, wherein one of the first and second magnetic layers is made of a ferrimagnetic material having a compensation point near room temperature.
て、前記非磁性層が絶縁体で構成されることを特徴とす
る磁気抵抗効果素子。2. The magnetoresistance effect element according to claim 1, wherein said nonmagnetic layer is made of an insulator.
２の磁性層から構成され、前記第１の磁性層は低い保磁
力および垂直磁気異方性を有する強磁性体であり、前記
第２の磁性層は高い保磁力および垂直磁気異方性を有す
る強磁性体である磁気抵抗効果素子であって、 前記第２の磁性層は、小さな飽和磁化を有する、希土類
−遷移金属からなる非晶質合金膜から構成されることを
特徴とする磁気抵抗効果素子。3. A semiconductor device comprising at least a first magnetic layer, a non-magnetic layer, and a second magnetic layer, wherein the first magnetic layer is a ferromagnetic material having a low coercive force and a perpendicular magnetic anisotropy. The second magnetic layer is a magnetoresistive element which is a ferromagnetic material having high coercive force and perpendicular magnetic anisotropy, and the second magnetic layer is made of a rare earth-transition metal having a small saturation magnetization. A magnetoresistive element comprising an amorphous alloy film.
２の磁性層から構成され、前記第１および第２の磁性層
が垂直磁気異方性を有し、前記第１または第２の磁性層
のどちらか一方が室温付近に補償点を有するフェリ磁性
体で構成される磁気抵抗効果素子を用いたことを特徴と
する磁気メモリ。4. A semiconductor device comprising at least a first magnetic layer, a non-magnetic layer, and a second magnetic layer, wherein the first and second magnetic layers have perpendicular magnetic anisotropy, and A magnetic memory characterized in that either one of the magnetic layers uses a magnetoresistive element composed of a ferrimagnetic material having a compensation point near room temperature.
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|---|---|---|---|
| JP2000001189A JP3574773B2 (en) | 2000-01-07 | 2000-01-07 | Magnetoresistive element and magnetic memory using the same |
| EP01100253A EP1115164B1 (en) | 2000-01-07 | 2001-01-03 | Magnetoresistive device and magnetic memory using the same |
| DE60110944T DE60110944T2 (en) | 2000-01-07 | 2001-01-03 | Magnetoresistive device and magnetic storage element using the same |
| US09/755,905 US6628542B2 (en) | 2000-01-07 | 2001-01-05 | Magnetoresistive device and magnetic memory using the same |
| CNB011113790A CN1254870C (en) | 2000-01-07 | 2001-01-06 | Magnet resistor and magnetic memory using the same magnetoresistance apparatus |
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|---|---|---|---|
| JP2000001189A JP3574773B2 (en) | 2000-01-07 | 2000-01-07 | Magnetoresistive element and magnetic memory using the same |
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| JP3574773B2 JP3574773B2 (en) | 2004-10-06 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003078184A (en) * | 2001-08-31 | 2003-03-14 | Canon Inc | Dry etching working method and work piece and structure using magnetic resistance effect film |
| JP2005503669A (en) * | 2001-09-20 | 2005-02-03 | セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク | Magnetic memory for writing with spin-polarized current using amorphous ferrimagnetic alloy and writing method thereof |
| JP2005109477A (en) * | 2003-09-26 | 2005-04-21 | Samsung Electronics Co Ltd | Magnetoresistive memory containing mtj layer comprising tunnel film of constant thickness, and manufacturing method thereof |
| JP2005524225A (en) * | 2002-04-23 | 2005-08-11 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Memory storage device with heating element |
-
2000
- 2000-01-07 JP JP2000001189A patent/JP3574773B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003078184A (en) * | 2001-08-31 | 2003-03-14 | Canon Inc | Dry etching working method and work piece and structure using magnetic resistance effect film |
| JP2005503669A (en) * | 2001-09-20 | 2005-02-03 | セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク | Magnetic memory for writing with spin-polarized current using amorphous ferrimagnetic alloy and writing method thereof |
| JP2005524225A (en) * | 2002-04-23 | 2005-08-11 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Memory storage device with heating element |
| JP2005109477A (en) * | 2003-09-26 | 2005-04-21 | Samsung Electronics Co Ltd | Magnetoresistive memory containing mtj layer comprising tunnel film of constant thickness, and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| JP3574773B2 (en) | 2004-10-06 |
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