JPS6323640B2 - - Google Patents
Info
- Publication number
- JPS6323640B2 JPS6323640B2 JP54140930A JP14093079A JPS6323640B2 JP S6323640 B2 JPS6323640 B2 JP S6323640B2 JP 54140930 A JP54140930 A JP 54140930A JP 14093079 A JP14093079 A JP 14093079A JP S6323640 B2 JPS6323640 B2 JP S6323640B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting layer
- thin film
- layer
- zns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 description 25
- 230000005684 electric field Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- -1 Si 3 N 4 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14093079A JPS5665492A (en) | 1979-10-30 | 1979-10-30 | Thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14093079A JPS5665492A (en) | 1979-10-30 | 1979-10-30 | Thin film el element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5665492A JPS5665492A (en) | 1981-06-03 |
| JPS6323640B2 true JPS6323640B2 (US07714131-20100511-C00038.png) | 1988-05-17 |
Family
ID=15280114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14093079A Granted JPS5665492A (en) | 1979-10-30 | 1979-10-30 | Thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5665492A (US07714131-20100511-C00038.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103588759A (zh) * | 2013-11-20 | 2014-02-19 | 北京桑普生物化学技术有限公司 | 5,6-o-异亚丙基-l-抗坏血酸的制备工艺 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5829880A (ja) * | 1981-08-13 | 1983-02-22 | Matsushita Electric Ind Co Ltd | 電場発光素子 |
| JPS58172891A (ja) * | 1982-04-02 | 1983-10-11 | ソニー株式会社 | Ｅｌ表示素子 |
| JPH0824071B2 (ja) * | 1987-11-16 | 1996-03-06 | 日本電信電話株式会社 | 薄膜エレクトロルミネセンス素子 |
-
1979
- 1979-10-30 JP JP14093079A patent/JPS5665492A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103588759A (zh) * | 2013-11-20 | 2014-02-19 | 北京桑普生物化学技术有限公司 | 5,6-o-异亚丙基-l-抗坏血酸的制备工艺 |
| CN103588759B (zh) * | 2013-11-20 | 2016-08-17 | 北京桑普生物化学技术有限公司 | 5,6-o-异亚丙基-l-抗坏血酸的制备工艺 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5665492A (en) | 1981-06-03 |
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