JPS632363A - 容量膜 - Google Patents
容量膜Info
- Publication number
- JPS632363A JPS632363A JP61145398A JP14539886A JPS632363A JP S632363 A JPS632363 A JP S632363A JP 61145398 A JP61145398 A JP 61145398A JP 14539886 A JP14539886 A JP 14539886A JP S632363 A JPS632363 A JP S632363A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mixed
- region
- concentration
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012528 membrane Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 9
- 229920005591 polysilicon Polymers 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 2
- 229910002113 barium titanate Inorganic materials 0.000 abstract 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000029305 taxis Effects 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 102220543423 26S proteasome non-ATPase regulatory subunit 10_L20S_mutation Human genes 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61145398A JPS632363A (ja) | 1986-06-20 | 1986-06-20 | 容量膜 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61145398A JPS632363A (ja) | 1986-06-20 | 1986-06-20 | 容量膜 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS632363A true JPS632363A (ja) | 1988-01-07 |
| JPH0553069B2 JPH0553069B2 (enExample) | 1993-08-09 |
Family
ID=15384335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61145398A Granted JPS632363A (ja) | 1986-06-20 | 1986-06-20 | 容量膜 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS632363A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5143861A (en) * | 1989-03-06 | 1992-09-01 | Sgs-Thomson Microelectronics, Inc. | Method making a dynamic random access memory cell with a tungsten plug |
| US6267470B1 (en) * | 1996-01-11 | 2001-07-31 | Canon Kabushiki Kaisha | Ink jet head structure having MOS transistors for power supply, and head substrate, ink jet cartridge, and ink jet apparatus having the same |
| JP2001237424A (ja) * | 1999-12-24 | 2001-08-31 | Hynix Semiconductor Inc | ゲート誘電体膜が適用される半導体素子の製造方法 |
| JP2002519865A (ja) * | 1998-06-30 | 2002-07-02 | ラム リサーチ コーポレーション | 高誘電率ゲート絶縁体を有するｕｌｓｉｍｏｓ |
| JP2008252118A (ja) * | 1998-03-12 | 2008-10-16 | Lucent Technol Inc | ドープされた金属酸化物誘電体材料を有する電子部品及びドープされた金属酸化物誘電体材料を有する電子部品の作製プロセス |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5861634A (ja) * | 1981-10-09 | 1983-04-12 | Fujitsu Ltd | 半導体装置用誘電体層の製造方法 |
| JPS61156865A (ja) * | 1984-12-28 | 1986-07-16 | Nec Corp | 半導体装置 |
-
1986
- 1986-06-20 JP JP61145398A patent/JPS632363A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5861634A (ja) * | 1981-10-09 | 1983-04-12 | Fujitsu Ltd | 半導体装置用誘電体層の製造方法 |
| JPS61156865A (ja) * | 1984-12-28 | 1986-07-16 | Nec Corp | 半導体装置 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5143861A (en) * | 1989-03-06 | 1992-09-01 | Sgs-Thomson Microelectronics, Inc. | Method making a dynamic random access memory cell with a tungsten plug |
| US6267470B1 (en) * | 1996-01-11 | 2001-07-31 | Canon Kabushiki Kaisha | Ink jet head structure having MOS transistors for power supply, and head substrate, ink jet cartridge, and ink jet apparatus having the same |
| JP2008252118A (ja) * | 1998-03-12 | 2008-10-16 | Lucent Technol Inc | ドープされた金属酸化物誘電体材料を有する電子部品及びドープされた金属酸化物誘電体材料を有する電子部品の作製プロセス |
| JP2013093589A (ja) * | 1998-03-12 | 2013-05-16 | Alcatel-Lucent Usa Inc | 誘電体材料を含む個別要素又は半導体デバイスを含む集積回路デバイス |
| JP2002519865A (ja) * | 1998-06-30 | 2002-07-02 | ラム リサーチ コーポレーション | 高誘電率ゲート絶縁体を有するｕｌｓｉｍｏｓ |
| JP2001237424A (ja) * | 1999-12-24 | 2001-08-31 | Hynix Semiconductor Inc | ゲート誘電体膜が適用される半導体素子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0553069B2 (enExample) | 1993-08-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |