JPH0553069B2 - - Google Patents

Info

Publication number
JPH0553069B2
JPH0553069B2 JP61145398A JP14539886A JPH0553069B2 JP H0553069 B2 JPH0553069 B2 JP H0553069B2 JP 61145398 A JP61145398 A JP 61145398A JP 14539886 A JP14539886 A JP 14539886A JP H0553069 B2 JPH0553069 B2 JP H0553069B2
Authority
JP
Japan
Prior art keywords
film
substrate
concentration
capacitive
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61145398A
Other languages
English (en)
Japanese (ja)
Other versions
JPS632363A (ja
Inventor
Masanobu Yoshiie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP61145398A priority Critical patent/JPS632363A/ja
Publication of JPS632363A publication Critical patent/JPS632363A/ja
Publication of JPH0553069B2 publication Critical patent/JPH0553069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP61145398A 1986-06-20 1986-06-20 容量膜 Granted JPS632363A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61145398A JPS632363A (ja) 1986-06-20 1986-06-20 容量膜

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61145398A JPS632363A (ja) 1986-06-20 1986-06-20 容量膜

Publications (2)

Publication Number Publication Date
JPS632363A JPS632363A (ja) 1988-01-07
JPH0553069B2 true JPH0553069B2 (enExample) 1993-08-09

Family

ID=15384335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61145398A Granted JPS632363A (ja) 1986-06-20 1986-06-20 容量膜

Country Status (1)

Country Link
JP (1) JPS632363A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5143861A (en) * 1989-03-06 1992-09-01 Sgs-Thomson Microelectronics, Inc. Method making a dynamic random access memory cell with a tungsten plug
JPH09248912A (ja) * 1996-01-11 1997-09-22 Canon Inc インクジェットヘッド及びヘッド用基体、インクジェットカートリッジ、並びにインクジェット装置
KR100319571B1 (ko) * 1998-03-12 2002-01-09 루센트 테크놀러지스 인크 도프된 금속 산화물 유전물질들을 가진 전자 소자들과 도프된 금속 산화물 유전물질들을 가진 전자 소자들을 만드는 과정
US6727148B1 (en) * 1998-06-30 2004-04-27 Lam Research Corporation ULSI MOS with high dielectric constant gate insulator
KR100376264B1 (ko) * 1999-12-24 2003-03-17 주식회사 하이닉스반도체 게이트 유전체막이 적용되는 반도체 소자의 제조 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722183B2 (ja) * 1981-10-09 1995-03-08 富士通株式会社 半導体装置用誘電体層の製造方法
JPS61156865A (ja) * 1984-12-28 1986-07-16 Nec Corp 半導体装置

Also Published As

Publication number Publication date
JPS632363A (ja) 1988-01-07

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