JPS63236240A - Electron emitting device - Google Patents

Abstract

PURPOSE:To make the amount of electron emission controllable in simple composition by disposing an electrode with a pointed head part formed on an insulating material surface and forming an insulating member on the insulating material surface and disposing an extraction electrode formed in the vicinity of the pointed head part through this insulating member. CONSTITUTION:An electrode 2 for voltage application is formed on a substrate 1, and an insulator is formed 50Angstrom to 150Angstrom or so in thickness to form an insulating layer 3. A core formation base 9 of a material, whose species is dissimilar to that of a composition material in the insulating layer 3, is formed on this insulating layer 3 so that it faces the electrode 2. In the center of a single core formed on this core formation base 9, a single crystal of Si or the like is made to grow to form an electrode 7 for electron emission, which has a pointed head part formed in a nearly conical shape. A metallic layer 4 is further formed on the insulating layer 3 and connected with the electrode 7 for electron emission. An insulating layer 5 with an opening part in the center of the electrode 7 is formed on the metallic layer 4. An extraction electrode 6 with an electron emitting hole opened is further formed. Hence, the amount of electron emission is made controllable in simple composition.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electron-emitting device, and particularly relates to an electrode having a pointed head provided on an insulating material surface, and an insulating material provided on the insulating material surface. The present invention relates to an electron emitting device having an extraction electrode provided in the vicinity of the pointed head via a member.

[Prior art]

Conventionally, hot cathode type electron emitting devices have been widely used as electron emission sources, but electron emission using hot cathode gold has problems such as large energy loss due to heating and the need for preheating.

In order to solve these problems, several cold cathode type electron emitting devices have been proposed. There is an emitting element.

FIG. 13 is a schematic partial cross-sectional view showing an example of a field-effect type electron-emitting device.

As shown in FIG. 13, Mo (
A cone-shaped electrode 26 made of molybdenum or the like is provided, and an insulating layer 24 of 810□ or the like is formed with an opening around the electrode 26. An extraction electrode 25 having an end formed therein is provided.

In the electron-emitting device having such a structure, when a voltage is applied between the base 23 and the extraction electrode 25, electrons are emitted from the tip where the electric field strength is strong.

[Problem that the invention seeks to solve]

In order to improve the withstand voltage in the above-mentioned field-effect electron-emitting devices, and to achieve finer pitch in multi-type electron-emitting devices, it is necessary to prevent the influence of adjacent electrodes with pointed heads. In this case, it is desirable that the electrode 26 having a pointed head be formed on an insulating surface.

In addition, in a multi-type electron-emitting device, from a desired position,
In order to emit electrons, it was necessary to control the electron emission of each electron emission source.

An object of the present invention is to provide an electron emitting device that has a simple configuration, can control the amount of electrons emitted from an electrode having a pointed head, and can form an electrode having a pointed head on an insulating material surface. be.

[Means for solving problems]

The above problem is solved by an electrode having a pointed head formed on a conductive material with an insulating layer sandwiched therebetween, and an electrode provided near the pointed head via an insulating member provided on the insulating layer. The problem is solved by the electron emitting device of the present invention, which has an extraction electrode and means for applying a voltage between the conductive material and the electrode.

[Effect]

In the electron emitting device of the present invention, an electrode having a pointed head is formed on a conductive material with an insulating layer sandwiched therebetween.
M configuration), by applying a full voltage (V) between the electrode with a pointed head formed on the surface of the insulating material and the conductive material, the insulating layer is brought into a state where electrons can tunnel, making the electron conductive. The purpose is to supply an electrode with a pointed head from a flexible material. That is, the amount of electrons emitted is completely controlled by controlling the amount of electrons supplied to the electrode having a peak by controlling the voltage V.

〔Example〕

Embodiments of the present invention will be described in detail below with reference to the drawings.

Figure 1) is a schematic explanatory diagram showing one embodiment of the electron-emitting device of the present invention. FIG. 1(B) is a partially enlarged view of section a in FIG. 1(4).

FIG. 2 is a timing chart for explaining the operation of the electron emitting device.

As shown in the first figure, AA, Ta, and Mo are deposited on the substrate 1.

A voltage applying electrode 2 made of a metal such as W or a semiconductor such as Si is formed, and is further made of At203. T&205,5
The insulating layer 3 is formed by forming an insulator such as IO2 to a thickness of about 50 to 1,501 mm. As shown in FIG. 1(B), a nucleation paste 9 made of a material different from the constituent material of the insulating layer 3 is formed on the insulating layer 3 at a position facing the electrode 2. Centered around a single nucleus formed in
By growing a single crystal such as l, about 5″0~10
, 0OOX, and has a substantially conical pointed end.

Further, a metal layer 4 such as KL, Au, or PT is formed on the insulating layer 3 and is connected to the electron emitting electrode 7.

The electrode 7 is not limited to a single crystal but may be a polycrystal or the like, but if it is made of a single crystal, the conductivity can be improved and the electron emission efficiency can be improved. Generally, it is difficult to form a single crystal on the surface of an insulating material, but according to the above-described single crystal growth method, a single crystal can be easily grown.

Note that a method for forming the electrode 7 for electron emission will be described later.

On the metal layer 4, SiO2, Sl, N4 . An insulating layer 5 such as a polyimide resin film is formed, and an extraction electrode 6 having an open electron emitting portion is further formed.

When a predetermined voltage is applied between the electrode 2 and the metal layer 4 described above, conduction is established between the electrode 2 and the electrode 7 due to tunneling. At this time, the power supply 1 is connected to the extraction electrode 6.
1 to the extraction electrode 6t - applying a voltage to make it a high potential;
When a voltage is applied to the irradiated object 8 from the power supply 10 to make the irradiated object 8 a high potential, electrons are emitted from the tip of the electrode 7 .

In such an electron emitting device, by controlling the voltage applied to the electrode 2 and the voltage applied to the metal layer 4, electron emission can be performed at a desired timing.

Figure 1 (as shown in N), the electrode 2 is
3, connect the pulse generating power source 12 to the metal layer 4,
As shown in FIG. 2, section 1. A negative voltage of vl is applied to the electrode 2, Ov is applied to the metal layer 4, and the potential difference V! When is set to a predetermined value or more, electrons pass through the insulating layer 3 by tunneling and are emitted from the tip of the electron-emitting electrode 7. In section 1, by applying a negative voltage of Vt (>v+) to the electrode 2 and applying a negative voltage of v3 to the metal layer 4, and making the potential difference V3 - V less than a predetermined value, electron tunneling can be suppressed. As a result, the connection between electrode 2 and electrode 7 is cut off. Further, in the interval t3, even if a negative voltage vl is applied to the metal layer 4, the potential difference is V3-V.

If is kept below a predetermined value, tunneling is suppressed and the disconnection state between electrode 2 and electrode 7 is maintained.

The electron emission control using the Nockles voltage described above is suitably used in an IJ type multi-type electron emission device having a plurality of electron emission sources.

FIG. 3 is an equivalent circuit diagram of the electron emission section of the multi-type electron emission device according to the present invention.

FIGS. 4A and 4B are timing charts showing voltages applied to electrodes arranged in a matrix.

In FIG. 3, diodes 10, 1 to 10, 5 have an MIM configuration consisting of an electrode 2, an insulating layer 3, and an electron emitting electrode 7, and electrodes 21 to 23 and metal layers 41 to 43 are arbitrarily selected to form metal layers. If the entire prescribed voltage is applied to make the layer metal high potential,
The diode at the desired position becomes conductive. For example, as shown in FIGS. 4A and 4B, when voltage vIt- is applied to the electrode 2I in interval t4 and QV is applied to each of the metal layers 4□ to 43 in order, the diode 141
1 + 1412 # 14 and 3 become conductive in order. Section 1. Similarly, in the section t6, the diodes 142 . The diodes 14 and 3 become conductive. At this time, each of the electron emission electrodes 71 (not shown) connected to the metal layers 41 to 43. ~733,
An extraction electrode 6 as shown in FIG. 1 is provided in common, and electrodes 74 . ~73
When a high potential voltage is applied to diodes 14 to 143. Electrons are emitted from the peaks of the electrodes 7,1 to 733 connected to the electrodes 7,1 to 733.

Next, a method for forming the electrode 7 for electron emission will be explained.

In the single crystal growth method used in the above-mentioned examples,
Form a heterogeneous material whose nucleation density is sufficiently higher than that of the material on this deposition surface and fine enough to allow only a single nucleus to grow, and grow crystals around the single nucleus grown in this heterogeneous material. However, this method has the following advantages.

(1) The shape of the electrode with a pointed head is determined by manufacturing conditions such as the deposition surface, different materials, deposit material, and deposition conditions, and is formed independently of the dimensional accuracy of the insulating member and the opening of the extraction electrode. Therefore, an electrode of a desired size can be formed, and variations in the size can be suppressed.

(2) Since the position of the electrode with the pointed head is determined by the positional accuracy of different materials, it can be manufactured at the desired position with high precision, and multi-type electron-emitting devices with multiple electron-emitting ports can be fabricated with fine pitch. It can be made with

(3) Since a pointed head peculiar to a single crystal is formed, and the shape of the electron emitting part is formed evenly and sharply, no special needle-like processing is required, and the electric field strength is uniform and strong; It is possible to suppress variations in the range of operation start voltage and improve electron emission efficiency.

(4) It becomes easy to grow a single crystal even on an amorphous insulating substrate, on which it has been difficult to grow a single crystal in the past, and an electron-emitting device with high breakdown voltage can be provided.

(5) Since it can be manufactured using a normal semiconductor manufacturing process, high integration can be achieved with a simple process.

A single crystal growth method for growing a single crystal on a deposition surface will be described in detail below.

First, a selective deposition method for selectively forming a deposited film on a deposition surface will be described. The selective deposition method takes advantage of the differences between materials in factors that affect nucleation during the thin film formation process, such as surface energy, adhesion coefficient, desorption coefficient, and surface diffusion rate.
This is a method of selectively forming a thin film on a substrate.

FIGS. 5A and 5B are explanatory views of the selective deposition method.

First, as shown in FIG. 4, K on the substrate 15,
5 and a thin film 16 made of a material having the above-mentioned factors different from each other is formed on a desired portion. Then, when a thin film made of a suitable material is deposited under suitable deposition conditions, the thin film 17 grows only on the thin film 16 and does not grow on the substrate 15, as shown in the same figure @). can be caused. By utilizing this phenomenon, it is possible to grow a thin film 12 formed in a self-aligned manner, making it possible to omit one step of lithography using a resist as in the prior art.

As a material that can be deposited by such a selective formation method, for example, 5i02. thin film 1
6 as Sl, GaAs, silicon nitride and as the thin film 17 to be deposited Si, W, GaAs, I
There are nP etc.

FIG. 6 is a graph showing changes over time in the nucleation density on the 5IO2 deposition surface and the silicon nitride deposition surface.

As the graph shows, shortly after the start of deposition 84
The nucleation density on 0□ is saturated below 10'cm-2,
The value hardly changes even after 20 minutes.

In contrast, on silicon nitride (813N4), ~4
Once saturated at X10IyR, it does not change for 10 minutes, but increases rapidly thereafter. In this measurement example, 5ICt is diluted with Sf:FI2 gas and the pressure is 1
The case is shown in which the film was deposited by the CVD method under conditions of 75 Torr and a temperature of 1000°C. Other 5IH4, 5I
A similar effect can be obtained by using H2C62, 5tucz, 5IF4, etc. as a reaction gas and adjusting pressure, temperature, etc. Vacuum deposition is also possible.

In this case, nucleation on 5102 is hardly a problem, but by adding HCt gas to the reaction gas, 5I
Nucleation on O2 can be further suppressed and old deposition on 5IO2 can be completely eliminated.

This phenomenon is largely due to the difference in adsorption coefficient, desorption coefficient, surface diffusion coefficient, etc. for 81 on the material surface of S10□ and silicon nitride, but 5tO2 reacts with the S1 atom itself, and monoxide with high vapor pressure The fact that SlO□ itself is etched when silicon is produced, and that such an etching phenomenon does not occur on silicon nitride is also thought to be a cause of selective deposition (T, Yonahara).

S, Yoshloka, S, Mlyazawa
Journal of AppliedPhys1e@5
3, 6839, 1982).

In this way, if 5IO2 and silicon nitride are selected as the materials of the deposition surface and silicon is selected as the deposition material,
As shown in the same graph, a sufficiently large difference in nucleation density can be obtained. Note that here, 5I is used as the material for the deposition surface.
Although O2 is preferable, the difference in nucleation density can be obtained even with sio treatment.

Of course, the material is not limited to these materials, and it is sufficient that the difference in nucleation density is 102 times or more in terms of the density of nuclei, as shown in the same graph. Sufficient selection formation can be performed.

Another method for obtaining this difference in nucleation density is to locally implant ions of St or N#l onto 5IO2 to form a region containing excess Sl, N, or the like.

By using such a selective deposition method and forming a foreign material with a nucleation density sufficiently higher than that of the material on the deposition surface in a sufficiently fine structure so that only a single nucleus grows, the presence of the fine foreign material can be reduced. It is possible to selectively grow single crystals only in certain locations.

The selective growth of single crystals depends on the electronic state on the surface of the deposition surface,
In particular, since it is determined by the state of the dangling Mnd, a material with a low nucleation density (9, for example, 810□) does not need to be a bulk material, but can be formed only on the surface of any material or substrate, etc. It is sufficient that the deposition surface 2 is formed.

FIGS. 7(A) to (C) are formation process diagrams showing an example of a single crystal forming method, and FIGS. 8(A) and (B) are
It is a perspective view of the board|substrate in figures (A) and (c).

First, as shown in FIG. 7(A) and FIG. 8(A)K,
A thin film 19 with a low nucleation density that enables selective deposition is formed on the substrate 18, a thin film 19 with a high nucleation density is deposited on the thin film 19, and the foreign material 20 is formed by turning 74 using phosphorography or the like. is formed sufficiently finely.

However, the thickness, crystal structure, and composition of the substrate 18 may be arbitrary, and it may be a substrate on which functional elements are formed. Further, the different material 20 includes a degraded region having an excessive amount of 81, N, etc., which is formed by ion-implanting 81, N, etc. into the thin film 19 as described above.

A single core of thin film material is then formed in only the dissimilar material 20 by suitable deposition conditions. That is, different materials 20
must be formed sufficiently finely so that only a single nucleus is formed. The size of the different material 20 varies depending on the type of material, but may be several microns or less. Furthermore,
The nuclei grow while maintaining the single crystal structure and become island-shaped single crystal grains 21 as shown in FIG. 7(B). Island-shaped single crystal grain 2
1, the thin film 1 must be formed as described above.
It is necessary to determine conditions such that no nucleation occurs on 9.

The island-shaped single crystal grains 21 further grow around the dissimilar material 20t while maintaining the single crystal structure, and as shown in FIG. Become.

Since the thin film 19, which is the material of the deposition surface, is formed on the substrate 18, any material can be used for the substrate 18, which serves as a support, and furthermore, functional elements etc. can be formed on the substrate 18. single crystals can be easily formed thereon.

In the above embodiment, the material of the deposition surface is formed of the thin film 19, but a single crystal may be similarly formed using a substrate made of a material with a low nucleation density that enables selective deposition.

FIG. 9(C) is a formation process diagram showing another example of the single crystal formation method.

As shown in the figure, by forming a sufficiently fine dissimilar material 20 on a substrate 19 made of a material with a low nucleation density to enable selective deposition, it is possible to Can form crystals.

(Specific Example) Next, a specific method for forming the single crystal layer in the above example will be described.

5tO2 is used as the material for the deposition surface of the thin film 19. Of course, a quartz substrate may be used, and metals, semiconductors, magnetic materials, piezoelectric materials,
On any substrate such as an insulator,
An 810□ layer may be formed on the surface of the substrate using a vacuum evaporation method or the like. Furthermore, although SlO□ is desirable as the material for the deposition surface, it may also be one in which the value of X as 510x is changed.

On the sio□ layer 19 thus formed, a silicon nitride layer (here, S l , N4 layer) is formed by low pressure vapor phase epitaxy.
Alternatively, a polycrystalline silicon layer is deposited as a different material, and the silicon nitride layer or polycrystalline silicon layer is a! Turning is performed to form a minute foreign material 20 of several microns or less, preferably ~1 μm or less.

Subsequently, ) (CL, N2, and 5IH2Ct2.5tct
4.5tucz, SIF'4 or 5II (4) is used to selectively grow Sl on the substrate 11. At that time, the substrate temperature is 700 to 1000°C and the pressure is about 100 Torr. .

In a period of about several tens of minutes, 81 single-crystal grains 21 grow around a fine foreign material 15 of silicon nitride or polycrystalline silicon on a 5in2 surface, and by setting the optimal growth conditions, the size of the grains can be increased. A single crystal 22 is formed whose size is controlled to be from about the same size as the above-mentioned dissimilar material to about several tens of μm.

(Composition of silicon nitride) In order to obtain a sufficient difference in nucleation density between the deposited surface material and the different material as described above, it is possible to change the composition of silicon nitride, not limited to St and N4. It may also be something you have.

5IH4 gas (!: NI (decomposes with 3 gases to form silicon nitride M at low temperature), e
In the MacCVD method, by changing the flow rate ratio of 5IR4 Goss and NFf3 Goss, the St.
The composition ratio of N and N can be changed significantly.

FIG. 10 is a graph showing the relationship between the flow rate ratio of 5IH4 and NH and the composition ratio of 81 and N in the formed silicon nitride film.

The deposition conditions at this time were: RF output 175W, substrate temperature 38W.
l at 0℃, S IH4 gas flow rate 300 ec/min
, and the gas flow rate was varied. As shown in the same graph, when the gas flow rate ratio of Nu, /5IH4 is changed from 4 to 10, the 31/N ratio in the silicon nitride film is 1.1 to 1.1.
It was revealed by Auger electron spectroscopy that the value changed to 0.58.

In addition, 5IH2Ct2 gas and (1) gas were introduced using the low pressure CVD method, and the temperature was approximately 800°C under a reduced pressure of 0.3 Torr.
The composition of the silicon nitride film formed under the conditions of
) was close to

In addition, St is heated to about 1200°C in ammonia or N2.
The silicon nitride film formed by heat treatment (thermal nitriding method) is formed under thermal equilibrium, so
Furthermore, a composition close to stoichiometric ratio can be obtained.

Silicon nitride '6st formed by various methods as described above.
When the above-mentioned St nuclei are grown using the above-mentioned St as a deposition surface material whose nucleation density is higher than 5lO2, a difference occurs in the nucleation density depending on the composition ratio.

FIG. 11 is a graph showing the relationship between St/N composition ratio and nucleation density. As shown in the graph, by changing the composition of the silicon nitride film, the nucleation density of St grown thereon changes significantly.

The nucleation conditions at this time are 5iCt4 gas at 175 To
Reduce the pressure to rr, react with N2 at 1000°C, and perform st 1
Generate.

This phenomenon in which the nucleation density changes depending on the composition of silicon nitride affects the size of silicon nitride as a heterogeneous material that is formed finely enough to grow a single nucleus. That is, silicon nitride having a composition with a high nucleation density cannot form a single nucleus unless it is formed very finely.

Therefore, it is necessary to select the nucleation density and the optimum silicon nitride size for selecting a single nucleus. For example, for deposition conditions that yield a nucleation density of ˜10 cm −2 , single nuclei can be selected as long as the silicon nitride has a size of about 4 μm or less.

(Formation of different materials by ion implantation) As a method to realize a difference in nucleation density with respect to St, 81+N, P, B, F, ArtHe, , C, As, Ga
, Go, etc. may be ion-implanted to form an altered region on the deposition surface of 5IO2, and this altered region may be used as a material for the deposition surface with a high nucleation density.

For example, a desired portion of the 5IO2 surface is exposed to light, developed, and dissolved to partially expose the StO□ surface.

Subsequently, using 5IF4 gas as a source gas, lXl0 ~ lXl0 a at Sl ion t' 10 kaV
implant into the 5IO2 surface with a density of n. The projected range is 114X, and the SI concentration is ~10 on the 5102 surface.
It reaches 22ffi-3. Since 810□ is originally amorphous, the region into which St ions are implanted is also amorphous.

Note that to form the altered region, ion implantation can be performed using a resist as a mask, but focused ion beam technology can be used to form a narrowed S without using a resist mask.
t ions 'i 5io2 may be implanted onto the surface.

After performing the ion implantation in this manner, the resist (1) is peeled off, thereby forming an altered region containing excess St on the SIO2 surface. St6 vapor phase growth is performed on the SIO□ deposition surface on which such an altered region is formed.

FIG. 12 is a graph showing the relationship between Si ion implantation amount and nucleation density.

As shown in the same graph, it can be seen that the larger the amount of SN+ implanted, the higher the nucleation density becomes.

Therefore, by forming the altered region sufficiently finely, a single nucleus of Sl can be grown using the altered region as a different material, and a single crystal can be grown as described above.

Note that forming the altered region sufficiently finely so that a single nucleus grows can be easily achieved by patterning a resist or narrowing down a focused ion beam.

(St deposition method other than CVO) To grow a single crystal by selective nucleation of Sl, CVO
In addition to the VD method, SI can be used in vacuum using KI O-'Tor.
A method in which the material is evaporated using an electron gun, heated, and deposited on a substrate is also used. In particular, in ultra-high vacuum ((10 Tor)
MBE (MolecularBe
In the am Epltaxy) method, it is known that the St beam and 5io2 begin to react at a substrate temperature of 900°C or higher, and Si nucleation on StO□ is completely eliminated (T
, Yonehara, S., Yoshioka a.
nd S, Mlyazawa Journal of
AppHad Physicm 53, io, I
p6839.

1983).

Utilizing this phenomenon, it is possible to form a single nucleus of S with perfect selectivity on microscopic silicon nitride dotted on 5IO2, and grow a single crystal S1 there. The deposition conditions were: vacuum level below 10 Torr, 81 beam strength 9.7 x l 014atoms/1112s
formula, and the substrate temperature was 900°C to 1000°C.

In this case, due to the reaction 310□+S1→2S10↑, a reaction product called SIO having a significantly high vapor pressure is formed, and this evaporation causes etching of 5IO2 itself by Si.

On the other hand, on silicon nitride, the above etching phenomenon does not occur, but nucleation and deposition occur.

Therefore, similar effects can be obtained by using tantalum oxide (Ta205) or silicon nitride=f 7 oxide (5ION) ee in addition to silicon nitride as a deposition surface material with a high nucleation density. That is, by micro-forming these materials to form the above-mentioned dissimilar materials, a single crystal can be similarly grown.

〔Effect of the invention〕

As explained in detail above, according to the electron emitting device of the present invention, the amount of electrons supplied to the electrode having a pointed portion formed on the surface of an insulating material can be controlled by the amount of electrons supplied to the electrode having a pointed portion formed on the surface of an insulating material and the conductive material. The amount of electron emission can be controlled with a simple structure.

In addition, as a method for manufacturing an electrode having a pointed head, a dissimilar material having a sufficiently higher nucleation density than the material of the insulating layer and sufficiently fine to the extent that only a single nucleus grows is formed in the insulating layer, If a crystal growth method is used in which a crystal is grown around a single nucleus grown in a different material, the following effects can be obtained.

(1) The shape of the electrode having a pointed head is determined by manufacturing conditions such as the deposition surface, different materials, the material of the conductive member, and deposition conditions;
Since the electrodes are formed independently of the dimensional accuracy of the insulating member and the opening of the lead-out electrode, it is possible to form an electrode of a desired size and to suppress variations in the size.

(2) Since the position of the electrode with the pointed head is determined by the positional accuracy of different materials, it can be manufactured at the desired position with high precision, and multi-type electron-emitting devices with multiple electron-emitting ports can be fabricated with fine pitch. It can be made with

(3) Since the unique point of a single crystal is formed and the shape of the electron emitting part is uniform and sharp, special needle-like processing is not required, and the electric field strength is uniform and strong. , it is possible to suppress variations in the range of operation start voltage and improve electron emission efficiency.

(4) It is easy to grow a single crystal even on an amorphous insulating substrate, on which it has been difficult to grow a single crystal in the past, and an electron-emitting device with high breakdown voltage can be provided.

(5) Since it can be manufactured using a normal semiconductor manufacturing process, high integration can be achieved with a simple process.

The electron-emitting device of the present invention is suitably used in a matrix-type electron-emitting device having a plurality of electron-emitting sources.

[Brief explanation of the drawing]

FIG. 1(A) is a schematic explanatory diagram showing an embodiment of an electron emitting device of the present invention. 1) is a partially enlarged view of section a in FIG. 1(4). FIG. 2 is a timing chart for explaining the operation of the electron emitting device. FIG. 3 is an equivalent circuit diagram of the electron emission section of the multi-type electron emission device according to the present invention. FIGS. 4(3) and 4(B) are timing charts showing voltages applied to electrodes arranged in a matrix. FIG. 5(4) and FIG. 5(B) are illustrations of the selective deposition method. FIG. 6 is a graph showing the change over time in the nucleation density on the deposited surface of SlO□ and the deposited surface of silicon nitride. FIGS. 7(3) to 7(C) are formation process diagrams showing an example of a method for forming a single crystal. FIGS. 8(A) and 6(B) are perspective views of the substrates in FIGS. 5(A) and 5(C). FIGS. 9(A) to 9(C) are formation process diagrams showing another example of the single crystal formation method. FIG. 10 is a graph showing the relationship between the flow rate ratio of 5IH4 and NH3 and the composition ratio of Si and N in the formed silicon nitride film. FIG. 11 is a graph showing the relationship between the S l /N composition ratio and the nucleation density. FIG. 12 is a graph showing the relationship between the implantation amount of Sl ions and the nucleation density. FIG. 13 is a schematic partial cross-sectional view showing an example of a field-effect type electron-emitting device. DESCRIPTION OF SYMBOLS 1... Base body, 2... Electrode, 3.5... Insulating layer, 4
... Metal layer, 6... Extraction electrode, 7... Electron emission electrode having a pointed head, 8... Irradiated object, 9...
・Nucleation Pei 7.10.11...t[il, 12.1
3...Pulse generation power supply. Agent Patent Attorney Ki Yamashita Figure 11 0 0.5
1. O5i/N, Kahachiru Procedures Amendment (Radio) June 25, 1988

Claims (3)

[Claims] (1) An electrode having a pointed head formed on a conductive material with an insulating layer sandwiched therebetween, and an extraction electrode provided near the pointed head via an insulating member provided on the insulating layer. and means for applying a voltage between the conductive material and the electrode. (2) The electrode having the pointed head is placed on the surface of the insulating layer,
A dissimilar material whose nucleation density is sufficiently higher than that of the material of the insulating layer and which is sufficiently fine that only a single nucleus grows is provided, and the dissimilar material is formed by a crystal grown by a single nucleus grown in the dissimilar material. An electron emitting device according to claim 1. (3) a wiring electrode that commonly connects a plurality of electrodes having the pointed portions in a row; and a wiring electrode made of the conductive material provided in a matrix with the wiring electrode via the insulating layer; An electron-emitting device according to claim 1.