JP2616918B2 - Display device - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device, and more particularly, to a display device that performs display by irradiating a fluorescent portion with electrons to emit light.

[Prior art and its problems] Conventionally, as a display device in an OA device such as a word processor or a personal computer, a CRT (Cathod-Ray) has advantages that a clear image can be obtained and high luminance is obtained. −Tub) has been widely used.

However, the CRT scans by deflecting the electrons emitted from the electron source by the magnetic field generated by the deflecting coil and irradiating the phosphor surface of R, G, B (for color display) to display the image. Since the distance moved by the deflection becomes the size of the display surface,
There is a problem that the distance for moving the electrons is increased and the distance from the electron source to the fluorescent portion is increased to increase the distance, making planarization difficult.

On the other hand, in recent years, liquid crystal elements, plasma displays, ELs, and the like have been receiving attention as flat-panel display devices. And the like, and it is difficult to display three or more colors with the liquid crystal itself. In addition, plasma displays and EL are light-emitting elements and do not have the above-mentioned problems with light-receiving elements.
It is difficult to achieve multicolor from the viewpoint of the difference in luminous efficiency depending on each wavelength of the luminous body, and there is a problem in terms of cost.

The present invention has been made in view of the above-described problems of the related art, and has as its object to provide a display device that can be planarized using a field-effect type electron-emitting device.

[Means for Solving the Problems] A display device according to the present invention includes an electrode having a pointed head formed on a base surface, and an extraction electrode provided on the base surface and near the pointed head. A deflecting electrode provided on the extraction electrode, and a fluorescent portion provided opposite to the electrode having the peak, wherein the electrode having the peak is provided on the base surface. In addition, 4 μm or less of an amorphous or polycrystalline material having a nucleation density higher than the nucleation density of the substrate surface and small enough to form a single nucleus that grows into a single crystal is formed. Forming a region having a size, then forming a single nucleus that becomes a single crystal by growing by supplying a source gas to the substrate surface, and forming a single nucleus on the region; By supplying a raw material gas, It is characterized by being formed by a step of growing a single crystal centering on one nucleus.

[Operation] The display device of the present invention controls the amount of electron emission by controlling the voltage applied between the electrode having the sharp point and the extraction electrode, and applies the fluorescent portion to the electrode having the sharp point. By applying a high potential voltage, the fluorescent part is irradiated with electrons to cause the fluorescent part to emit light.

[Example] Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a schematic partial sectional view for explaining an embodiment of the display device of the present invention.

FIG. 2 (A) is a partially enlarged view of the electron emission portion in FIG. 1, and FIG. 2 (B) is a plan view of the electron emission portion.

As shown in FIGS. 1 and 2 (A), an oxide substrate 1 such as SiO ₂ which is an amorphous insulating material constituting a surface to be deposited.
Next, a plurality of nucleation bases 2 of different materials such as Si ₃ N ₄ are formed at a predetermined distance. By growing a single crystal of Mo, W, Si or the like around the single nucleus formed on the nucleation base 2, an electrode 7 of a desired size having a substantially conical point is formed. I do. The tip of each electrode 7 serves as an electron emitting portion. At this time, the surface to be deposited other than the dissimilar material surface is a non-nucleation forming surface, and growth other than single crystal growth centering on the nucleation base 2 is suppressed. The method for producing a single crystal will be described later.

Si having an opening centered on the formed electrode 7
An insulating layer 5 of O ₂ or the like is formed.
A recess is formed in the shape of a dish centered on. A metal layer of Mo or the like is formed in the concave portion to form a lead electrode 3,
An insulating layer 6 such as O ₂ is formed, and as shown in FIG.
Forming the insulating layer electrode 4 ₁ a pair on the 6, 4 ₃ and the electrode 4 _2, 4 _4.

On the electrode 7, a plurality of unit regions 9 in which each of the fluorescent regions is formed by applying R, G, and B phosphors in three columns × three rows at a fixed distance are formed on the fluorescent part 8 in which a large number is formed. Provided. Each unit region 9 is formed in accordance with the pitch of the electrode 7, and each unit region 9 is formed so as to face the electrode 7.

In the above embodiment, the extraction electrode 3 is made of Mo.
Although it was produced by processing a metal layer such as in the process, it may be produced by bonding a metal plate having an opening to the insulating layer 5 after the formation of the insulating layer 5.

 Hereinafter, the operation of the display device having the above configuration will be described.

FIG. 3 is a partially assembled view of the electron-emitting portion of the above embodiment. The electrode 4 _1, 4 ₃ and electrodes 4 _2, 4 ₄ are omitted for simplicity.

FIG. 4 is a schematic explanatory view of an electron emission control operation by wirings and extraction electrodes arranged in a matrix.

 FIG. 5 is an operation explanatory view of the display device of the above embodiment.

As shown in FIG. 3, the wiring of the electron-emitting portion is formed by forming a groove 7 in the insulating layer 5 after forming the electrode 7 having a peak on the deposition surface, and forming the wiring 10 in the groove. A voltage is applied between the wiring 10 and the lead electrode 3 so that the potential of the lead electrode 3 is high between the wiring 10 and the lead electrode 3.
When applied by V ₃ , electrons can be emitted from the pointed tip of the electrode 7.

The electron emission between the wiring 10 and the extraction electrode 3 is controlled by, for example, wiring arranged in a row as shown in FIG.
Apply a voltage of 0 V to each of 10 ₁ to 10 ₄
10 ₁ to 10 ₄ each of the extraction electrode 3 ₁ to 3 ₄ arranged in a row in a matrix by connecting the transistors with respect to,
By inputting a voltage signal to a desired extraction electrode at a desired timing, electrons can be emitted from the electrode 7 at an arbitrary position.

As shown in FIG. 5, the emitted electrons are applied to the electrodes 4 ₁ , 2 by applying a voltage between the electrode 7 and the fluorescent portion 8 to make the fluorescent portion 8 have a high potential, as shown in FIG. 4 ₃ and through substantially the center of the electrode 4 _2, 4 ₄ is applied to the unit area 9 of the fluorescent portion 8. At this time, when a predetermined voltage is applied between the electrodes 4 ₁ and 4 ₃ by the power supply V ₂ , electrons are controlled to be deflected in the Y direction in the figure, and the electrodes 4 ₂ and 4 3 are controlled.
By the power supply V ₁ during _4, when a predetermined voltage is applied, electrons are deflected controlled in the X direction in FIG.

As described above, the display device according to the present embodiment controls the amount of electron emission by controlling the voltage applied to the wiring 10 and the extraction electrode 3, and controls the electrodes 4 ₁ , 4 ₃ and the electrodes 4 ₂ , 4 _4. It is possible to irradiate desired positions of the respective phosphor regions constituting the unit region 9 with electrons by the voltages respectively applied to the pixels.

In the above embodiment, the moving direction of the electrons is controlled by the voltages applied to the electrodes 4 ₁ , 4 ₃ and the electrodes 4 ₂ , 4 ₄ , respectively. On the other hand, a display device can be configured such that one phosphor region faces each other.

FIG. 6 is a schematic partial sectional view for explaining another embodiment of the display device of the present invention.

In the same figure, facing the electrode 7 having each pointed head,
R, G, and B phosphor regions are provided. In this case, the unit area 9 is controlled by nine electrodes 7 and the deflection electrodes
4 _1, 4 ₃ and electrodes 4 _2, 4 ₄ is not required.

In the above-described embodiment, a point unique to the single crystal is formed, and the shape of the electron emitting portion is formed uniformly and sharply. Therefore, no special needle-like processing is required, and the electric field intensity is uniform and strong. Accordingly, variation in the range of the operation start voltage can be suppressed, and the conductivity can be improved, so that the electron emission efficiency can be improved.

The single crystal growth method described in the above embodiment, that is, forming a heterogeneous material on the surface to be deposited with a nucleation density sufficiently higher than that of the material on the surface to be deposited and small enough to grow only a single nucleus. However, the crystal growth method of growing a crystal around a single nucleus grown on a heterogeneous material has the following advantages.

(1) The shape of the electrode having a pointed tip is determined by manufacturing conditions such as a surface to be deposited, a surface of a different kind of material, a material of the electrode, and deposition conditions, so that an electrode of a desired size can be formed. Variations in the size can be suppressed.

(2) Since the position of the electrode having the pointed head is determined by the positional accuracy of the dissimilar material surface, it can be manufactured at a desired position with high accuracy, and the electron emitting portion having a plurality of electron emitting ports can be formed at a fine pitch. Can be made.

(3) It is easy to grow a single crystal even on an amorphous insulating material surface where it has conventionally been difficult to grow a single crystal, and it is possible to provide a high breakdown voltage electron-emitting portion. Further, since the amorphous insulating substrate is relatively inexpensive and can have a large area, a display device can be formed over a large area.

(4) Since the semiconductor device can be manufactured by an ordinary semiconductor manufacturing process, high integration can be performed by simple steps.

Hereinafter, a single crystal growth method for growing a single crystal on a surface to be deposited will be described in detail.

First, a selective deposition method for selectively forming a deposition film on a surface to be deposited will be described. Selective deposition is a method of selectively depositing a thin film on a substrate using the difference between materials, such as surface energy, adhesion coefficient, desorption coefficient, and surface diffusion rate, which influence nucleation during the thin film formation process. It is a method of forming.

FIGS. 7A and 7B are explanatory diagrams of the selective deposition method.

First, as shown in FIG.
And a thin film 12 made of a material having the above factors different from each other is formed at a desired portion. Then, when a thin film made of an appropriate material is deposited under appropriate deposition conditions, as shown in FIG.
The phenomenon that the thin film 13 grows only on the thin film 12 but not on the substrate 11 can be caused. By utilizing this phenomenon, the thin film 13 formed in a self-aligned manner can be grown, and a conventional lithography process using a resist can be omitted.

Materials that can be deposited by such a selective formation method include, for example, SiO ₂ as the substrate 11, Si, GaAs, silicon nitride as the thin film 12, and Si, W, GaAs, InP as the thin film 13 to be deposited. .

FIG. 8 is a graph showing the change over time in the nucleation density of the surface on which SiO ₂ is deposited and the surface on which silicon nitride is deposited.

As the graph shows, shortly after the start of deposition, SiO ₂
The nucleation density above is saturated below 10 ³ cm ^-2 , and its value hardly changes after 20 minutes.

On the other hand, on silicon nitride (Si ₃ N ₄ ),
Once saturated at 0 ⁵ cm ^-2 , then it does not change for about 10 minutes,
After that, it increases rapidly. In this measurement example, Si
This shows a case in which Cl ₄ gas is diluted with H ₂ gas and deposited by the CVD method under the conditions of a pressure of 175 Torr and a temperature of 1000 ° C. S
A similar effect can be obtained by adjusting pressure, temperature, etc. using iH ₄ , SiH ₂ Cl ₂ , SiHCl ₃ , SiF ₄ or the like as a reaction gas. Also, vacuum deposition is possible.

In this case, nucleation on SiO ₂ is not a problem, but by adding HCl gas to the reaction gas, nucleation on SiO ₂ is further suppressed, and deposition of Si on SiO ₂ is completely eliminated. Can be

Such a phenomenon is largely due to the difference in the adsorption coefficient, desorption coefficient, surface diffusion coefficient, etc. of the material surface of SiO ₂ and silicon nitride with respect to Si, but SiO ₂ reacts by the Si atoms themselves and the vapor pressure is high. The generation of silicon oxide etches SiO ₂ itself, and the fact that such an etching phenomenon does not occur on silicon nitride is also considered to be a cause of selective deposition (T. Yonehar
a, S.Yoshioka, S.Miyazawa Journal of Applied Physics
53,6839,1982).

If SiO ₂ and silicon nitride are selected as the material of the surface to be deposited as described above and silicon is selected as the deposition material, a sufficiently large difference in nucleation density can be obtained as shown in the graph. Here, SiO ₂ is desirable as the material of the surface to be deposited, but the material is not limited to this, and a difference in nucleation density can be obtained even with SiO _x .

Of course, the invention is not limited to these materials, it is sufficient if 10 ² times or more in a density of nuclei as shown by the difference the graph of nucleation density, also deposited by a material exemplified later film Can be formed selectively.

As another method of obtaining the difference in nucleation density, a region having excessive Si, N, or the like may be formed by locally implanting ions of Si, N, or the like on SiO ₂ .

Utilizing such a selective deposition method, a heterogeneous material having a nucleation density sufficiently higher than that of the surface to be deposited is formed fine enough so that only a single nucleus grows. The single crystal can be selectively grown only at the existing position.

The selective growth of the single crystal depends on the electronic state of the nucleation surface,
In particular, since the material is determined by the state of the dangling bond, the material having a low nucleation density (for example, SiO ₂ ) does not need to be a bulk material, and is formed only on the surface of an arbitrary material or a substrate and deposited. It only has to be a plane.

9 (A) to 9 (C) are formation process diagrams showing an example of a method for forming a single crystal, and FIGS. 10 (A) and (B) show the substrate in FIGS. 9 (A) and 9 (C). It is a perspective view of.

First, as shown in FIG. 9 (A) and FIG. 10 (A), a thin film 15 having a small nucleation density enabling selective deposition is formed on a substrate 14, and a thin film 15 having a high nucleation density is formed thereon. The nucleation surface material is deposited thinly and patterned by lithography or the like to form the dissimilar material 16 sufficiently fine.
However, the size, crystal structure and composition of the substrate 14 may be arbitrary, and may be a substrate on which a functional element is formed. Further, as described above, the dissimilar material 16 includes an altered region having excessive Si, N, or the like formed by ion-implanting Si, N, or the like into the thin film 15.

Next, a single nucleus of thin film material is formed only in the dissimilar material 16 by appropriate deposition conditions. That is, different materials 16
Must be formed fine enough to form only a single nucleus. The size of the dissimilar material 16 depends on the type of the material, but may be several microns or less. Further, the nucleus grows while maintaining the single crystal structure, and becomes an island-like single crystal grain 17 as shown in FIG. 4 (B). In order to form island-like single crystal grains 17, as described above, it is necessary to determine conditions so that nucleation does not occur on the thin film 15 at all.

The island-shaped single crystal grains 17 are made of different materials while maintaining the single crystal structure.
The crystal grows further around the center 16 and becomes a rotating single crystal 17a having a substantially conical point as shown in FIG.

The thin film 15, which is the material of the surface thus deposited, is
Since the substrate 14 is formed on the substrate 14, any material can be used for the substrate 14 serving as a support, and even if a functional element or the like is formed on the substrate 14, a single crystal can be easily formed thereon. Can be formed.

In the above embodiment, the material on the surface to be deposited is the thin film 15.
However, a single crystal may be similarly formed using a substrate made of a material having a low nucleation density that enables selective deposition.

FIGS. 11A to 11C are formation process diagrams showing another example of a single crystal formation method.

As shown in FIG. 11, by dissimilarly forming a different material 16 on a substrate 15 made of a material having a low nucleation density that enables selective deposition, a single unit is formed similarly to the example shown in FIG. Crystals can be formed.

(Specific Example) Next, a specific method for forming the single crystal layer in the above example will be described.

SiO ₂ is used as the material of the surface on which the thin film 15 is deposited. Of course, a quartz substrate may be used, or a metal, a semiconductor, a magnetic material, a piezoelectric material, an insulator, etc.
An SiO ₂ layer may be formed on the substrate surface by using a vacuum evaporation method or the like. Further, SiO ₂ is desirable as the material of the surface to be deposited, but SiO _x may have a different value of x.

A silicon nitride layer (here, a Si ₃ N ₄ layer) or a polycrystalline silicon layer is deposited as a dissimilar material on the SiO ₂ layer 15 formed in this manner by a low pressure vapor phase epitaxy method. Alternatively, a silicon nitride layer or a polycrystalline silicon layer is patterned by a lithography technique using an ion beam, and is patterned to several microns or less, preferably to about 1 μm.
The following minute dissimilar material 16 is formed.

Subsequently, HCl and H ₂ , SiH ₂ Cl ₂ , SiCl ₄ , SiHCl ₃ , SiF ₄
Alternatively, Si is selectively grown on the substrate 15 by using a mixed gas with SiH ₄ . In that case, the board limit is 700-1100
C, pressure is about 100 Torr.

In a few tens of minutes, a single crystal of silicon nitride or polycrystal silicon on SiO ₂
By growing the Si grains 17 under optimal growth conditions, a single crystal 17a having a size from the size of the above-mentioned dissimilar materials to about several tens μm or more is formed.

(Silicon nitride composition) In order to obtain a sufficient difference in nucleation density between the material on the surface to be deposited and the dissimilar material as described above, it is not limited to Si ₃ N ₄ , but silicon nitride. The composition may be changed.

In a plasma CVD method in which a SiN ₄ gas and an NH ₃ gas are decomposed in an RF plasma to form a silicon nitride film at a low temperature, SiH ₄ is used.
By changing the flow ratio of the ₄ gas and the NH ₃ gas, the composition ratio of Si and N of the silicon nitride film to be deposited can be changed greatly.

FIG. 12 is a graph showing the relationship between the flow ratio of SiH ₄ and NH ₃ and the composition ratio of Si and N in the formed silicon nitride film.

The deposition conditions at this time were an RF output of 175 W and a substrate temperature of 380 ° C., and the flow rate of NH ₃ gas was changed while the flow rate of SiH ₄ gas was fixed at 300 cc / min. As shown in the graph, when the gas flow ratio of NH ₃ / SiH ₄ was changed from 4 to 10, Si in the silicon nitride film was changed.
Auger electron spectroscopy revealed that the / N ratio varied from 1.1 to 0.58.

In addition, the composition of a silicon nitride film formed under a reduced pressure of 0.3 Torr and a temperature of about 800 ° C. by introducing a SiH ₂ Cl ₂ gas and an NH ₃ gas by a reduced pressure CVD method is almost stoichiometric. ₃ N ₄ (S
i / N = 0.75).

In addition, a silicon nitride film formed by heat-treating Si at about 1200 ° C. in ammonia or N ₂ (thermal nitriding method) has a closer stoichiometric ratio because the forming method is performed under thermal equilibrium. A composition can be obtained.

When nucleation density of the silicon nitride formed by various methods Si is grown nuclei of the Si used as the material of the surface to be higher deposition than SiO ₂ as described above, the difference in nucleation density by the composition ratio Occurs.

FIG. 13 is a graph showing the relationship between the Si / N composition ratio and the nucleation density. As shown in the graph, by changing the composition of the silicon nitride film, the nucleation density of Si grown thereon changes significantly. The nucleation conditions at this time were SiCl ₄
The gas is depressurized to 175 Torr and reacted with H ₂ at 1000 ° C. to generate Si.

Such a phenomenon that the nucleation density changes depending on the composition of silicon nitride affects the size of silicon nitride as a dissimilar material formed sufficiently finely to grow a single nucleus. That is, silicon nitride having a composition with a high nucleation density cannot form a single nucleus unless formed very finely.

Therefore, it is necessary to select the nucleation density and the optimal silicon nitride size from which a single nucleus can be selected. For example, under the deposition conditions to obtain a nucleation density of about 10 ⁵ cm ^−2, a single nucleus can be selected if the size of silicon nitride is about 4 μm or less.

(Formation of different types of materials by ion implantation) as a method for realizing nucleation density difference to Si, topically to SiO ₂ surface is a material of the surface to be low deposition of nucleation density Si, N, P, B, F, Ar, He, C, As, Ga, Ge, etc. are ion-implanted to form an altered region on the SiO ₂ deposition surface, and this altered region can be used as a material for the surface to be deposited with a high nucleation density. good.

For example, often the SiO ₂ surface with a resist, exposing the desired portions, development, dissolved the SiO ₂ surface partially to expose it.

Subsequently, using SiF ₄ gas as a source gas, Si ions are implanted into the SiO ₂ surface at 10 keV at a density of 1 × 10 ¹⁶ to 1 × 10 ¹⁸ cm ⁻² . As a result, the projection range is 114 °, and the Si concentration on the SiO ₂ surface reaches 1010 ²² cm ⁻³ . Since SiO ₂ is originally amorphous, the region into which Si ions are implanted is also amorphous.

In order to form the altered region, ion implantation can be performed using a resist as a mask, but the focused ion beam technique was used to narrow down the area without using a resist mask.
Si ions may be implanted into the SiO ₂ surface.

After ion implantation in this manner, the resist is peeled off to form a deteriorated region in which Si is excessive on the SiO ₂ surface. SiO ₂ which is the surface to be deposited on which such altered regions are formed
Vapor-grow Si on the surface.

FIG. 14 is a graph showing the relationship between the implantation amount of Si ions and the nucleation density.

As shown in the graph, it can be seen that the nucleation density increases as the Si ⁺ implantation amount increases.

Therefore, by forming the altered region sufficiently fine,
Using this altered region as a dissimilar material, a single nucleus of Si can be grown, and a single crystal can be grown as described above.

It is to be noted that the formation of the altered region sufficiently fine enough to grow a single nucleus can be easily achieved by patterning a resist or narrowing a focused ion beam.

(Si deposition methods other than CVD) In order to grow single crystals by selective nucleation of Si, CV
In addition to the D method, a method in which Si is evaporated by an electron gun in a vacuum (<10 ⁻⁶ Torr) and deposited on a heated substrate is also used. In particular, deposition is performed in ultra-high vacuum (<10 ^-9 Torr)
In MBE (Molecular Beam Epitaxy) method, substrate temperature is 900 ℃
It is known that the Si beam and SiO ₂ begin to react as described above, and there is no Si nucleation on SiO ₂ (T.Yonehara, S, Y
oshioka and S. Miyazawa Journal of Applied Physics
53, 10, p6839, 1983).

Utilizing this phenomenon, a single nucleus of Si is formed with perfect selectivity in minute silicon nitride scattered on SiO ₂ ,
Single crystal Si could be grown there. The deposition conditions at this time were as follows: vacuum degree 10 ⁻⁸ Torr or less, Si beam intensity 9.7 × 10
¹⁴ atoms / cm ² · sec, and the substrate temperature was 900 ° C. to 1000 ° C.

In this case, the reaction of SiO ₂ + Si → 2SiO ↑
Thus, a reaction product having a remarkably high vapor pressure is formed, and the SiO ₂ itself is etched by Si due to the evaporation.

On the other hand, the above etching phenomenon does not occur on silicon nitride, and nucleation and deposition occur.

Therefore, as the material of the surface to be deposited with a high nucleation density, tantalum oxide (Ta
The same effect can be obtained by using ₂ O ₅ ), silicon nitride oxide (SiON) or the like. That is, a single crystal can be similarly grown by minutely forming these materials to be the above-mentioned different materials.

(Growth of Tungsten Single Crystal) A case where tungsten is used as a material other than Si will be exemplified.

Tungsten, without causing nucleation on SiO _2, Si,
It is known that a polycrystalline film is deposited on WSi ₂ , PtSi, Al or the like. However, according to the crystal growth method of the present invention, a single crystal can be easily grown.

First, Si, WSi ₂ , PtSi, or Al is deposited by vacuum deposition on glass, quartz, a thermal oxide film, or the like containing SiO ₂ as a main component, and patterned by photolithography to a size of several μm or less.

Subsequently, it is installed in a reactor heated to 250 to 500 ° C,
WF ₆ gas and hydrogen gas mixed gas at a pressure of about 0.1 to 10 Torr
At a flow rate of 75 cc / min and 10 cc / min, respectively.

Thereby, tungsten is generated as represented by the reaction formula of WF ₆ + 3H ₂ → W + 6HF. At this time, since the reactivity between tungsten and SiO ₂ is extremely low and no strong bond is generated, nucleation does not occur and thus no deposition occurs.

On the other hand, tungsten nuclei are formed on Si, WSi ₂ , PtSi, and Al, but because they are finely formed,
Only a single nucleus of tungsten is formed. Then, this single nucleus continues to grow and grows on SiO ₂ as a single crystal in the lateral direction. This is because the nucleus growth of tungsten does not occur on SiO ₂ , so that single crystal growth is not hindered and polycrystal is not formed.

The combination of the material of the surface to be deposited, the dissimilar material, and the deposition material described above is not limited to the combination shown in each of the above embodiments, and may be any combination of materials having a sufficient nucleation density difference. Is clear. Therefore, even in the case of a compound semiconductor such as GaAs or InP that can be selectively deposited, a single crystal or a group of single crystals can be formed by the present invention.

[Effects of the Invention] As described above in detail, according to the display device of the present invention, the amount of electron emission is controlled by controlling the voltage applied between the electrode having the pointed head and the extraction electrode, By applying a voltage to the fluorescent portion to a high potential with respect to the electrode having the pointed tip, the fluorescent portion is irradiated with electrons to cause the fluorescent portion to emit light. Since the fluorescent portion can emit light using the electron source, the distance required to deflect the electrons can be shortened or unnecessary, and a flat display device can be configured. Also, a deflection electrode is provided on the extraction electrode,
And, in the fluorescent portion, a plurality of fluorescent regions are provided in a range of the moving distance of the electrons that can be deflected by the deflection electrode, and by irradiating the desired fluorescent region with electrons by controlling the deflection electrode, one With the pointed head and the electrodes, it is possible to emit multiple fluorescent areas, reducing the number of electron sources,
Alternatively, further fine pitching can be performed.

Further, according to the present invention, a pointed head peculiar to a single crystal is formed, and the shape of the electron emitting portion is formed uniformly and sharply. Therefore, no special needle-like processing is required, and the electric field intensity is uniform and strong. In this case, variations in the range of the operation start voltage can be suppressed, and the conductivity can be improved, so that the electron emission efficiency can be improved.

When the electrode having the pointed tip is formed, a dissimilar material having a nucleation density sufficiently higher than that of the material on the surface to be deposited and small enough to grow only a single nucleus is formed on the surface to be deposited. By forming a single crystal into an electrode by a crystal growth method of forming and growing a single crystal as the center of a single nucleus grown on this heterogeneous material, the following advantages are obtained.

(1) The shape of the electrode having a pointed tip is determined by manufacturing conditions such as a surface to be deposited, a surface of a different kind of material, a material of the electrode, and deposition conditions, so that an electrode of a desired size can be formed. Variations in the size can be suppressed.

(2) Since the position of the electrode having the pointed head is determined by the positional accuracy of the surface of the dissimilar material, it can be manufactured at a desired position with high accuracy. Can be produced.

(3) It is easy to grow a single crystal even on an amorphous insulating material surface where it has conventionally been difficult to grow a single crystal, and it is possible to provide a high breakdown voltage electron-emitting portion. Further, since the amorphous insulating substrate is relatively inexpensive and can have a large area, a display device can be formed over a large area.

(4) Since the semiconductor device can be manufactured by an ordinary semiconductor manufacturing process, high integration can be performed by simple steps.

[Brief description of the drawings]

FIG. 1 is a schematic partial sectional view for explaining an embodiment of the display device of the present invention. FIG. 2 (A) is a partially enlarged view of the electron emitting portion in FIG. 1, and FIG. 2 (B) is a plan view of the electron emitting portion. FIG. 3 is a partially assembled view of the electron emission section. FIG. 4 is a schematic explanatory view of an electron emission control operation by wirings and extraction electrodes arranged in a matrix. FIG. 5 is an operation explanatory view of the display device of the above embodiment. FIG. 6 is a schematic partial sectional view for explaining another embodiment of the display device of the present invention. FIGS. 7A and 7B are explanatory diagrams of the selective deposition method. FIG. 8 is a graph showing the change over time in the nucleation density of the surface on which SiO ₂ is deposited and the surface on which silicon nitride is deposited. FIGS. 9A to 9C are formation process diagrams showing an example of a single crystal formation method. 10 (A) and 10 (B) are perspective views of the substrate in FIGS. 9 (A) and 9 (C). FIGS. 11A to 11C are formation process diagrams showing another example of a single crystal formation method. FIG. 12 is a graph showing the relationship between the flow ratio of SiH ₄ and NH ₃ and the composition ratio of Si and N in the formed silicon nitride film. FIG. 13 is a graph showing the relationship between the Si / N composition ratio and the nucleation density. FIG. 14 is a graph showing the relationship between the implantation amount of Si ions and the nucleation density. 1 ...... oxide substrate 2 ...... nucleation base 3 ...... extraction electrode ₄₁ to _fourth electrodes 8 having ...... electrodes 5,6 ...... insulating layer 7 ...... pointed head ...... fluorescent unit 9 ...... unit area 10 Wiring

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Tetsuya Kaneko Inventor Canon, Inc. 3- 30-2 Shimomaruko, Ota-ku, Tokyo (72) Inventor Toshihiko Takeda 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inside (72) Inventor Takao Yonehara 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Takeshi Ichikawa 3-30-2, Shimomaruko 3-chome, Ota-ku, Tokyo Canon Inc. ( 72) Inventor Masahiko Okunuki 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (56) References JP-A-50-16379 (JP, A) JP-A-59-16255 (JP, A) JP-A-58-87731 (JP, A) JP-A-48-88870 (JP, A) JP-A-49-122269 (JP, A) JP-A-59-69495 (JP, A)

Claims (1)

(57) [Claims] An electrode having a point formed on the surface of the base, an extraction electrode provided on the surface of the substrate and near the point, and a deflection electrode provided on the extraction electrode. In a display device having an electrode and a fluorescent portion provided opposite to the electrode having the pointed tip, the electrode having the pointed tip is larger than a nucleation density of the substrate surface on the substrate surface. Forming a region made of an amorphous or polycrystalline material having a nucleation density and having a size of 4 μm or less that is small enough to form a single nucleus that grows into a single crystal; A step of forming a single nucleus which becomes a single crystal by supplying a source gas to the substrate surface and forming the single nucleus on the region, and subsequently supplying the source gas to the substrate surface to form the single nucleus; The process of growing a single crystal centered Thus the display device, characterized in that formed.