JP2713569B2 - Electron emission device - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron-emitting device, and more particularly to an electrode having a pointed head provided on an insulating material surface, and an insulating device provided on the insulating material surface. The present invention relates to an electron emission device having an extraction electrode provided in the vicinity of the pointed head via a member. [Prior art] Conventionally, a hot-cathode electron-emitting device has been widely used as an electron-emitting source. However, electron emission using a hot-cathode has a large energy loss due to heating and has a problem that preheating is required. Was. In order to solve these problems, several cold-cathode-type electron-emitting devices have been proposed, and a field-effect-type electron emission device that locally generates a high electric field and emits electrons by field emission. There are elements. FIG. 13 is a schematic partial sectional view showing an example of a field-effect type electron-emitting device. As shown in FIG. 13, a conical electrode 26 of Mo (molybdenum) or the like is provided on a substrate 23 of Si or the like, and an insulating layer 24 of SiO ₂ or the like provided with an opening around the electrode 26 is provided. Formed,
An extraction electrode 25 having an end formed in the vicinity of the conical point is provided thereon. In the electron-emitting device having such a structure, when a voltage is applied between the base 23 and the extraction electrode 25, electrons are emitted from the peak having a strong electric field intensity. [Problems to be Solved by the Invention] In the field-effect type electron-emitting device as described above, in order to improve the withstand voltage or to achieve a fine pitch in the multi-type electron-emitting device, adjacent peaks are used. When the effect of the electrode having a portion is to be prevented, the electrode 26 having a pointed head is preferably formed on an insulating surface. Further, in the multi-type electron emission device, in order to emit electrons from a desired position, it is necessary to control the electron emission of each electron emission source. SUMMARY OF THE INVENTION An object of the present invention is to provide an electron-emitting device that can control the amount of electron emission emitted from an electrode having a pointed tip and can form an electrode having a pointed tip on an insulating material surface with a simple configuration. is there. [Means for Solving the Problems] The above problems are caused by an electrode having a pointed tip formed by sandwiching an insulating layer on a flat conductive material, and an insulating layer provided on the insulating layer. An extraction electrode provided in the vicinity of the electrode having the peak via a member, and an electrode having the peak by applying a voltage between the electrode having the peak and the extraction electrode. A first voltage applying means for emitting electrons, and a second voltage supplying means for applying electrons between the conductive material and the electrode having the peak to supply electrons to the electrode having the peak. The electron emission device according to the present invention, comprising: a voltage application unit, wherein the voltage applied by the second voltage application unit is controlled to control the amount of electrons emitted from the electrode having the pointed tip. Solved by [Effect] The electron emission device of the present invention forms an electrode having a pointed tip on a conductive material with an insulating layer interposed therebetween (hereinafter, this configuration is referred to as MI
By applying a voltage (V) between an electrode having a pointed tip formed on the surface of an insulating material and a conductive material, the insulating layer is brought into a state where electrons can be tunneled and the electrons are made conductive. It is intended to supply an electrode having a pointed head from a conductive material. That is, the amount of electrons to be emitted is controlled by controlling the voltage V to control the amount of electrons supplied to the electrode having the sharp point. [Example] Hereinafter, an example of the present invention will be described in detail with reference to the drawings. FIG. 1A is a schematic explanatory view showing one embodiment of the electron-emitting device of the present invention. FIG. 1 (B) is FIG. 1 (A)
It is the elements on larger scale of part a in a middle. FIG. 2 is a timing chart for explaining the operation of the electron emission device. As shown in FIG. 1A, a voltage application electrode 2 made of a metal such as Al, Ta, Mo, W, or a semiconductor such as Si is formed on a base 1.
Is formed, and an insulator such as Al ₂ O ₃ , Ta ₂ O ₅ , SiO ₂ is formed to a thickness of about 50 to 150 ° to form an insulating layer 3. First
As shown in FIG. 2B, a nucleation base 9 made of a material different from the constituent material of the insulating layer 3 is formed on the insulating layer 3 at a position facing the electrode 2. A single crystal such as Si is grown around the single nucleus thus formed to form an electron emission electrode 7 having a substantially conical point with a size of about 50 to 10,000 °. A metal layer 4 of Al, Au, Pt, or the like is formed on the insulating layer 3 and is connected to the electron emission electrode 7. The electrode 7 is not limited to a single crystal, and may be a polycrystal or the like. However, if a single crystal is used, the conductivity can be improved and the electron emission efficiency can be improved. In general, it is difficult to form a single crystal on the surface of an insulating material, but according to the above-described single crystal growth method, a single crystal can be easily grown. The method for forming the electron emission electrode 7 will be described later. An insulating layer 5 such as a SiO ₂ , Si ₃ N ₄ , or polyimide resin film having an opening centered on an electrode 7 is formed on the metal layer 4, and an extraction electrode 6 having an electron emission opening.
Is formed. When a predetermined voltage is applied between the electrode 2 and the metal layer 4, conduction between the electrode 2 and the electrode 7 becomes possible by tunneling. At this time, a power supply is
When a voltage that causes the extraction electrode 6 to have a high potential is applied from 11 and a voltage that causes the irradiation object 8 to have a high potential is applied to the irradiation object 8 from the power supply 10, electrons are emitted from the tip of the electrode 7. In such an electron emission device, by controlling the voltage applied to the electrode 2 and the voltage applied to the metal layer 4, it is possible to emit electrons at a desired timing. As shown in FIG. 1 (A), a pulse generating power
13 connects, to connect the pulse generator power supply 12 to the metal layer 4, as shown in FIG. 2, the negative voltage V ₁ becomes applied to the electrode 2 in the interval t _1, 0V is applied to the metal layer 4, if a potential difference V ₁ or a predetermined value, electrons pass through the insulating layer 3 by tunneling, it is released from the peak portion of the electrode 7 for electron emission. section
At t ₂ , a negative voltage of V ₂ (> V ₁ ) is applied to the electrode 2, and the metal layer 4
When a negative voltage V ₃ is applied to the electrode and the potential difference V ₃ −V ₂ is less than a predetermined value, tunneling of electrons is suppressed, and the electrode 2 and the electrode 7 are cut off. In addition interval t _3, even by applying a negative voltage V ₁ becomes the metal layer 4, when the potential difference V ₃ -V ₁ Oke by less than a predetermined value, tunneling is suppressed, blocking between the electrodes 2 and 7 State is maintained. The electron emission control based on the pulse voltage described above is suitably used for a matrix type multi-type electron emission device having a plurality of electron emission sources. FIG. 3 is an equivalent circuit diagram of an electron emitting portion of the multi-type electron emitting device according to the present invention. FIGS. 4A and 4B are timing charts showing voltages applied to the electrodes arranged in a matrix. In Figure 3, diodes 14 _{11-14 33} shows a MIM structure comprising the electrode 2 and the insulating layer 3 and the electrode 7 for electron emission,
When a predetermined voltage is applied to the metal layer and the high potential electrode 2 ₁ to 2 ₃ and the metal layer ₄₁ to ₃ to select arbitrarily, the desired position of the diode becomes conductive. For example, FIGS. 4 (A) and (B)
As shown in, the voltages V ₁ is applied to the electrode 2 ₁ a section t _4,
When the 0V respectively to the metal layer ₄₁ to ₃ continue to sequentially applied to the diode 14 _11, 14 _12, 14 ₁₃ is rendered conductive in sequence. Section t ₅
And also turned to the diode 14 ₃₃ turn the diode 14 ₂₁ in the same manner in the interval t _6. At this time, the metal layer
4 against _{1-4 3} to connect each of the electrodes 7 _{11-7 33} for electron emission (not shown) that is, the lead-out electrode 6 as shown in FIG. 1 provided in common, and the lead-out electrode 6 to be on the irradiated body 8, by applying a high potential voltage to the electrode 7 _{11-7 33,}
Sequentially electrons from cusp of the diode 14 _{11-14 33} and associated electrode 7 _{11-7 33} is released. Next, a method for forming the electrode 7 for electron emission will be described. The single crystal growth method used in the above-described embodiment uses a heterogeneous material on the surface to be deposited that has a nucleation density sufficiently higher than the material of the surface to be deposited, and is fine enough to grow only a single nucleus. Is formed, and a crystal is grown around a single nucleus grown on this heterogeneous material. This method has the following advantages. (1) The shape of the electrode having a pointed tip is determined by the manufacturing conditions such as the surface to be deposited, dissimilar material, material of the deposit, and deposition conditions, and is independent of the dimensional accuracy of the insulating member and the opening of the extraction electrode. Therefore, an electrode having a desired size can be formed, and variation in the size can be suppressed. (2) Since the position of the electrode having the pointed tip is determined by the positional accuracy of the dissimilar material, it can be manufactured at a desired position with high accuracy, and the multi-type electron-emitting device having a plurality of electron emission ports can be fine-pitched. Can be produced. (3) Since a peak unique to a single crystal is formed and the shape of the electron-emitting portion is formed uniformly and sharply, no special needle-like processing is required, the electric field intensity is made uniform and strong, and the operation is started. Variations in the voltage range can be suppressed, and electron emission efficiency can be improved. (4) It is easy to grow a single crystal even on an amorphous insulating substrate where it has conventionally been difficult to grow a single crystal, so that a high breakdown voltage electron-emitting device can be provided. (5) Since the semiconductor device can be manufactured by an ordinary semiconductor manufacturing process, high integration can be performed by simple steps. Hereinafter, a single crystal growth method for growing a single crystal on a surface to be deposited will be described in detail. First, a selective deposition method for selectively forming a deposition film on a surface to be deposited will be described. Selective deposition is a method of selectively depositing a thin film on a substrate using the difference between materials, such as surface energy, adhesion coefficient, desorption coefficient, and surface diffusion rate, which influence nucleation during the thin film formation process. It is a method of forming. FIGS. 5A and 5B are explanatory diagrams of the selective deposition method. First, as shown in FIG.
And a thin film 16 made of a material having the above factors different from each other is formed at a desired portion. Then, when a thin film made of an appropriate material is deposited under appropriate deposition conditions, as shown in FIG.
The phenomenon that the thin film 17 grows only on the thin film 16 but not on the substrate 15 can be caused. By utilizing this phenomenon, the thin film 12 formed in a self-aligned manner can be grown, and a conventional lithography process using a resist can be omitted. Materials that can be deposited by such a selective formation method include, for example, SiO ₂ as the substrate 15, Si, GaAs, silicon nitride as the thin film 16, and Si, W, GaAs, InP as the thin film 17 to be deposited. FIG. 6 is a graph showing the change over time in the nucleation density between the surface on which SiO ₂ is deposited and the surface on which silicon nitride is deposited. As the graph shows, shortly after the start of deposition, SiO ₂
The nucleation density above is saturated below 10 ³ cm ^-2 , and its value hardly changes after 20 minutes. On the other hand, on silicon nitride (Si ₃ N ₄ ),
Once saturated at 0 ⁵ cm ^-2 , then it does not change for about 10 minutes,
After that, it increases rapidly. In this measurement example, Si
This shows a case in which Cl ₄ gas is diluted with H ₂ gas and deposited by the CVD method under the conditions of a pressure of 175 Torr and a temperature of 1000 ° C. S
A similar effect can be obtained by adjusting pressure, temperature, etc. using iH ₄ , SiH ₂ Cl ₂ , SiHCl ₃ , SiF ₄ or the like as a reaction gas. Also, vacuum deposition is possible. In this case, nucleation on SiO ₂ is not a problem, but by adding HCl gas to the reaction gas, nucleation on SiO ₂ is further suppressed, and deposition of Si on SiO ₂ is completely eliminated. Can be Such a phenomenon is largely due to the difference in the adsorption coefficient, desorption coefficient, surface diffusion coefficient, etc. of the material surface of SiO ₂ and silicon nitride with respect to Si, but SiO ₂ reacts by the Si atoms themselves and the vapor pressure is high. The generation of silicon oxide etches SiO ₂ itself, and the fact that such an etching phenomenon does not occur on silicon nitride is also considered to be a cause of selective deposition (T. Yoneha).
ra, S.Yoshioka, S.Miyazawa Journal of Applied Physic
s 53,6839,1982). If SiO ₂ and silicon nitride are selected as the material of the surface to be deposited as described above and silicon is selected as the deposition material, a sufficiently large difference in nucleation density can be obtained as shown in the graph. Note that, here, SiO ₂ is desirable as the material of the surface to be deposited. However, the material is not limited to this, and a difference in nucleation density can be obtained even with SiO _X. Of course, the invention is not limited to these materials, it is sufficient if 10 ² times or more in a density of nuclei as shown by the difference the graph of nucleation density, also deposited by a material exemplified later film Can be formed selectively. As another method of obtaining the difference in nucleation density, a region having excessive Si, N, or the like may be formed by locally implanting ions of Si, N, or the like on SiO ₂ . Utilizing such a selective deposition method, a heterogeneous material having a nucleation density sufficiently higher than that of the surface to be deposited is formed fine enough so that only a single nucleus grows. The single crystal can be selectively grown only at the existing position. Since the selective growth of the single crystal is determined by the electronic state of the surface on which the single crystal is to be deposited, in particular, the state of dangling bonds, a material having a low nucleation density (for example, SiO ₂ )
Does not need to be a bulk material, but may be formed only on the surface of any material, substrate, or the like to form the surface on which the above-described deposition is performed. 7 (A) to 7 (C) are formation process diagrams showing an example of a single crystal formation method, and FIGS. 8 (A) and (B) show the substrate in FIGS. 7 (A) and 7 (C). It is a perspective view of. First, as shown in FIG. 7 (A) and FIG. 8 (A), a thin film 19 having a low nucleation density is formed on a substrate 18 to enable selective deposition. The dissimilar material 20 is formed thin enough by thinly depositing the dissimilar material and patterning it by lithography or the like. However, the size, crystal structure, and composition of the substrate 18 may be arbitrary, and may be a substrate on which a functional element is formed. Further, the different material 20 is a thin film 19 made of Si, N, or the like as described above.
In addition, an altered region having excessive Si, N, or the like formed by ion implantation into the substrate is also included. Next, a single nucleus of thin film material is formed only in the dissimilar material 20 by appropriate deposition conditions. That is, different materials 20
Must be formed fine enough to form only a single nucleus. The size of the dissimilar material 20 depends on the type of the material, but may be several microns or less. Further, the nucleus grows while maintaining the single crystal structure, and becomes an island-like single crystal grain 21 as shown in FIG. 7 (B). In order to form the island-like single crystal grains 21, it is necessary to determine conditions so that nucleation does not occur on the thin film 19 at all, as described above. The island-shaped single crystal grains 21 are made of different materials while maintaining the single crystal structure.
Further growing around the center 20, a single crystal 22 of a rotating body having a substantially conical point is obtained as shown in FIG. The thin film 19, which is the material of the surface thus deposited, is
Since it is formed on the substrate 18, any material can be used for the substrate 18 serving as a support, and even when a functional element or the like is formed on the substrate 18, a single crystal can be easily formed thereon. Can be formed. In the above embodiment, the material of the surface to be deposited is a thin film 19.
However, a single crystal may be similarly formed using a substrate made of a material having a low nucleation density that enables selective deposition. FIGS. 9A to 9C are formation process diagrams showing another example of the single crystal formation method. As shown in FIG. 7, by dissimilarly forming a different material 20 sufficiently small on a substrate 19 made of a material having a low nucleation density which enables selective deposition, a single unit is formed in the same manner as in the example shown in FIG. Crystals can be formed. (Specific Example) Next, a specific method for forming the single crystal layer in the above example will be described. SiO ₂ is used as the material of the surface on which the thin film 19 is deposited. Of course, a quartz substrate may be used, or a metal, a semiconductor, a magnetic material, a piezoelectric material, an insulator, etc.
An SiO ₂ layer may be formed on the substrate surface by using a vacuum evaporation method or the like. Further, SiO ₂ is desirable as a material of the surface to be deposited, but a material in which the value of x as SiO _X is changed may be used. A silicon nitride layer (here, a Si ₃ N ₄ layer) or a polycrystalline silicon layer is deposited as a dissimilar material on the SiO ₂ layer 19 formed in this manner by a low pressure vapor phase epitaxy method. Alternatively, a silicon nitride layer or a polycrystalline silicon layer is patterned by a lithography technique using an ion beam, and is patterned to several microns or less, preferably to about 1 μm.
The following minute heterogeneous material 20 is formed. Subsequently, HCl and H ₂ , SiH ₂ Cl ₂ , SiCl ₄ , SiHCl ₃ , SiF ₄
Alternatively, Si is selectively grown on the substrate 11 by using a mixed gas with SiH ₄ . The substrate temperature at that time is 700-1000
C, pressure is about 100 Torr. Number ten minutes to time, around the fine heterogeneous material 15 silicon or polycrystalline silicon nitride on the SiO _2, the single crystal
By growing Si grains 21 under optimal growth conditions, a single crystal 22 whose size is controlled from the size of the above-mentioned different materials to about several tens μm is formed. (Silicon nitride composition) In order to obtain a sufficient difference in nucleation density between the material on the surface to be deposited and the dissimilar material as described above, it is not limited to Si ₃ N ₄ , but silicon nitride. The composition may be changed. In a plasma CVD method in which a SiN ₄ gas and an NH ₃ gas are decomposed in an RF plasma to form a silicon nitride film at a low temperature, SiH ₄ is used.
By changing the flow ratio of the ₄ gas and the NH ₃ gas, the composition ratio of Si and N of the silicon nitride film to be deposited can be changed greatly. FIG. 10 is a graph showing a relationship between a flow ratio of SiH ₄ and NH ₃ and a composition ratio of Si and N in the formed silicon nitride film. The deposition conditions at this time were an RF output of 175 W and a substrate temperature of 380 ° C., and the flow rate of NH ₃ gas was changed while the flow rate of SiH ₄ gas was fixed at 300 cc / min. As shown in the graph, when the gas flow ratio of NH ₃ / SiH ₄ was changed from 4 to 10,
Auger electron spectroscopy revealed that the Si / N ratio varied from 1.1 to 0.58. In addition, the composition of a silicon nitride film formed under a reduced pressure of 0.3 Torr and a temperature of about 800 ° C. by introducing a SiH ₂ Cl ₂ gas and an NH ₃ gas by a reduced pressure CVD method is almost stoichiometric. ₃ N ₄ (S
i / N = 0.75). In addition, a silicon nitride film formed by heat-treating Si at about 1200 ° C. in ammonia or N ₂ (thermal nitriding method) has a closer stoichiometric ratio because the forming method is performed under thermal equilibrium. A composition can be obtained. When nucleation density of the silicon nitride formed by various methods Si is grown nuclei of the Si used as the material of the surface to be higher deposition than SiO ₂ as described above, the difference in nucleation density by the composition ratio Occurs. FIG. 11 is a graph showing the relationship between the Si / N composition ratio and the nucleation density. As shown in the graph, by changing the composition of the silicon nitride film, the nucleation density of Si grown thereon changes significantly. The nucleation conditions at this time were SiCl ₄
The gas is depressurized to 175 Torr and reacted with H ₂ at 1000 ° C. to generate Si. Such a phenomenon that the nucleation density changes depending on the composition of silicon nitride affects the size of silicon nitride as a dissimilar material formed sufficiently finely to grow a single nucleus. That is, silicon nitride having a composition with a high nucleation density cannot form a single nucleus unless formed very finely. Therefore, it is necessary to select the nucleation density and the optimal silicon nitride size from which a single nucleus can be selected. For example, under the deposition conditions to obtain a nucleation density of about 10 ⁵ cm ^−2, a single nucleus can be selected if the size of silicon nitride is about 4 μm or less. (Formation of different types of materials by ion implantation) as a method for realizing nucleation density difference to Si, topically to SiO ₂ surface is a material of the surface to be low deposition of nucleation density Si, N, P, B, F, Ar, He, C, As, Ga, Ge, etc. are ion-implanted to form an altered region on the surface on which SiO ₂ is deposited, and this altered region is formed on the surface of the deposited surface with a high nucleation density. It is good. For example, often the SiO ₂ surface with a resist, exposing the desired portions, development, dissolved the SiO ₂ surface partially to expose it. Subsequently, using SiF ₄ gas as a source gas, Si ions are implanted into the SiO ₂ surface at 10 keV at a density of 1 × 10 ¹⁶ to 1 × 10 ¹⁸ cm ⁻² . As a result, the projection range is 114 °, and the Si concentration on the SiO ₂ surface reaches 1010 ²² cm ⁻³ . Since SiO ₂ is originally amorphous, the region into which Si ions are implanted is also amorphous. In order to form the altered region, ion implantation can be performed using a resist as a mask, but the focused ion beam technique was used to narrow down the area without using a resist mask.
Si ions may be implanted into the SiO ₂ surface. After ion implantation in this manner, the resist is peeled off to form a deteriorated region in which Si is excessive on the SiO ₂ surface. SiO ₂ which is the surface to be deposited on which such altered regions are formed
Vapor-grow Si on the surface. FIG. 12 is a graph showing the relationship between the amount of implanted Si ions and the nucleation density. As shown in the graph, it is understood that the nucleation density increases as the Si ⁺ implantation amount increases. Therefore, by forming the altered region sufficiently fine,
Using this altered region as a dissimilar material, a single nucleus of Si can be grown, and a single crystal can be grown as described above. It is to be noted that the formation of the altered region sufficiently fine enough to grow a single nucleus can be easily achieved by patterning a resist or narrowing a focused ion beam. (Si deposition methods other than CVD) In order to grow single crystals by selective nucleation of Si, CV
In addition to the D method, a method in which Si is evaporated by an electron gun in a vacuum (<10 ⁻⁶ Torr) and deposited on a heated substrate is also used. In particular, deposition is performed in ultra-high vacuum (<10 ^-9 Torr)
In MBE (Molecular Beam Epitaxy) method, substrate temperature is 900 ℃
It is known that the Si beam and SiO ₂ begin to react as described above, and there is no Si nucleation on SiO ₂ (T.Yonehara, SY)
oshioka and S. Miyazawa Journal of Applied Physics
53, 10, p6839, 1983). Utilizing this phenomenon, a single nucleus of Si is formed with perfect selectivity in minute silicon nitride scattered on SiO ₂ ,
Single crystal Si could be grown there. The deposition conditions at this time were as follows: vacuum degree 10 ⁻⁸ Torr or less, Si beam intensity 9.7 × 10
¹⁴ atoms / cm ² · sec, and the substrate temperature was 900 ° C. to 1000 ° C. In this case, the reaction of SiO ₂ + Si → 2SiO ↑
Thus, a reaction product having a remarkably high vapor pressure is formed, and the SiO ₂ itself is etched by Si due to the evaporation. On the other hand, the above etching phenomenon does not occur on silicon nitride, and nucleation and deposition occur. Therefore, as the material of the surface to be deposited with a high nucleation density, tantalum oxide (Ta
The same effect can be obtained by using ₂ O ₅ ), silicon nitride oxide (SiON) or the like. That is, a single crystal can be similarly grown by minutely forming these materials to be the above-mentioned different materials. [Effects of the Invention] As described above in detail, according to the electron emission device of the present invention, the amount of electrons supplied to the electrode having the cusp formed on the surface of the insulating material has the cusp. It is possible to control by a voltage applied between the electrode and the conductive material, and it is possible to control the amount of electron emission with a simple structure. As a method for manufacturing an electrode having a pointed tip, a different material having a nucleation density sufficiently higher than that of the material of the insulating layer and sufficiently fine enough to grow only a single nucleus is formed on the insulating layer, The following effects can be obtained by using a crystal growth method for growing a crystal around a single nucleus grown on a dissimilar material. (1) The shape of the electrode having a pointed tip is determined by manufacturing conditions such as the surface to be deposited, dissimilar material, material of the conductive member, and deposition conditions, and is independent of the dimensional accuracy of the opening of the insulating member and the lead electrode. Therefore, an electrode having a desired size can be formed, and variation in the size can be suppressed. (2) Since the position of the electrode having the pointed tip is determined by the positional accuracy of the dissimilar material, it can be manufactured at a desired position with high accuracy, and the multi-type electron-emitting device having a plurality of electron emission ports can be fine-pitched. Can be produced. (3) Since a sharp point peculiar to a single crystal is formed and the shape of the electron emitting portion is formed uniformly and sharply, no special needle-like processing is required, the electric field intensity is made uniform and strong, and the operation is started. Variations in the voltage range can be suppressed, and electron emission efficiency can be improved. (4) It is easy to grow a single crystal even on an amorphous insulating substrate, which has conventionally been difficult to grow a single crystal, and it is possible to provide a high breakdown voltage electron-emitting device. (5) Since the semiconductor device can be manufactured by an ordinary semiconductor manufacturing process, high integration can be performed by simple steps. The electron emission device of the present invention is suitably used for a matrix type electron emission device having a plurality of electron emission sources.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 (A) is a schematic explanatory view showing one embodiment of the electron-emitting device of the present invention. FIG. 1 (B) is a partially enlarged view of a portion a in FIG. 1 (A). FIG. 2 is a timing chart for explaining the operation of the electron emission device. FIG. 3 is an equivalent circuit diagram of an electron emitting portion of the multi-type electron emitting device according to the present invention. FIGS. 4A and 4B are timing charts showing voltages applied to the electrodes arranged in a matrix. FIGS. 5A and 5B are explanatory diagrams of the selective deposition method. FIG. 6 is a graph showing the change over time in the nucleation density between the surface on which SiO ₂ is deposited and the surface on which silicon nitride is deposited. FIGS. 7A to 7C are formation process diagrams showing an example of a single crystal formation method. FIGS. 8 (A) and 8 (B) are perspective views of the substrate in FIGS. 7 (A) and 7 (C). FIGS. 9A to 9C are formation process diagrams showing another example of the single crystal formation method. FIG. 10 is a graph showing a relationship between a flow ratio of SiH ₄ and NH ₃ and a composition ratio of Si and N in the formed silicon nitride film. FIG. 11 is a graph showing the relationship between the Si / N composition ratio and the nucleation density. FIG. 12 is a graph showing the relationship between the implantation amount of Si ions and the nucleation density. FIG. 13 is a schematic partial sectional view showing an example of a field-effect type electron-emitting device. DESCRIPTION OF SYMBOLS 1 ... Base, 2 ... Electrode, 3,5 ... Insulating layer, 4 ... Metal layer, 6 ...
Lead electrode, 7 ... electrode for emitting electrons having a pointed head,
8: irradiated object, 9: nucleation base, 10, 11: power supply, 12, 13
... Pulse generation power supply.

Continuation of front page    (72) Inventor Takeo Tsukamoto               3-30-2 Shimomaruko, Ota-ku, Tokyo               Inside Canon Inc. (72) Inventor Toshihiko Takeda               3-30-2 Shimomaruko, Ota-ku, Tokyo               Inside Canon Inc. (72) Inventor Takao Yonehara               3-30-2 Shimomaruko, Ota-ku, Tokyo               Inside Canon Inc. (72) Inventor Takeshi Ichikawa               3-30-2 Shimomaruko, Ota-ku, Tokyo               Inside Canon Inc. (72) Inventor Masahiko Okunuki               3-30-2 Shimomaruko, Ota-ku, Tokyo               Inside Canon Inc.                (56) References JP-A-61-221783 (JP, A)                 Shokai Sho 56-167456 (JP, U)                 Shokai Sho 56-140134 (JP, U)

Claims (1)

(57) [Claims] An electrode having a peak formed on a flat conductive material with an insulating layer interposed therebetween, and provided near the electrode having the peak via an insulating member provided on the insulating layer. Drawn electrode, first voltage applying means for emitting electrons from the electrode having the sharp point by applying a voltage between the electrode having the sharp point, and the conductive material, And a second voltage applying means for supplying electrons to the electrode having the sharp point by applying a voltage between the second electrode and the electrode having the sharp point. An electron emission device that controls the amount of electrons emitted from the electrode having the pointed tip by controlling the applied voltage. 2. The electrode having the pointed tip is provided on the surface of the insulating layer with a heterogeneous material whose nucleation density is sufficiently higher than that of the material of the insulating layer and which is fine enough to grow only a single nucleus. 2. The electron emission device according to claim 1, wherein the electron emission device is formed by a crystal grown by a single nucleus grown on a dissimilar material. 3. A patent comprising a wiring electrode for commonly connecting a plurality of electrodes having the pointed heads in a row, and a wiring electrode made of the conductive material and provided in a matrix with the insulating layer interposed therebetween. The electron emission device according to claim 1.