JPS63232361A - Lead frame and semiconductor device - Google Patents

Lead frame and semiconductor device

Info

Publication number
JPS63232361A
JPS63232361A JP62063816A JP6381687A JPS63232361A JP S63232361 A JPS63232361 A JP S63232361A JP 62063816 A JP62063816 A JP 62063816A JP 6381687 A JP6381687 A JP 6381687A JP S63232361 A JPS63232361 A JP S63232361A
Authority
JP
Japan
Prior art keywords
tab
element mounting
lead frame
mounting surface
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62063816A
Other languages
Japanese (ja)
Inventor
Akihiro Yaguchi
昭弘 矢口
Asao Nishimura
西村 朝雄
Makoto Kitano
誠 北野
Hideo Miura
英生 三浦
Sueo Kawai
末男 河合
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62063816A priority Critical patent/JPS63232361A/en
Publication of JPS63232361A publication Critical patent/JPS63232361A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

PURPOSE:To prevent the generation of resin crack by heat in case of mounting a semiconductor device on a printed substrate by forming the section of a tab at a tab reverse element placing surface in a shape in which the thickness of the tab is gradually increased from both ends of short axis direction toward the center. CONSTITUTION:A tapered surface 14 is so formed at a reverse element placing surface 2a of a tab 2 that the sectional shape of the tab 2 is gradually increased in thickness from both ends 2e of the tab 2 in a short axis direction toward the center. Since the angle of the end 2e of the tab 2 of this sectional shape in the short axis direction becomes 90 deg. or larger, a stress concentration rate can be reduced. Accordingly, since the thickness of resin is increased to provide a stress reducing effect and it can prevent a local stress concentration, it can prevent the resin from cracking from both ends 2e of the tab 2 in the short axis direction.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はリードフレーム及び半導体装置に係り、特に樹
脂封止型半導体装置の樹脂クラックの発生防止に好適な
リードフレーム構成とこのリードフレームを用いた半導
体装置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a lead frame and a semiconductor device, and in particular to a lead frame structure suitable for preventing the occurrence of resin cracks in a resin-sealed semiconductor device and the use of this lead frame. related to semiconductor devices.

〔従来の技術〕[Conventional technology]

近年、半導体装置は高密度実装化の要求によって、プリ
ント基板のスルーホールにリードを挿入するピン挿入型
のものから、プリント基板の表面に直接実装する面付実
装型の需要が多くなってきている。半導体装置のプリン
ト基板表面への実装は、プリント基板7にはんだを塗布
しておき、プリント基板上に半導体装置を置いて、赤外
線やペーパーリフローなどの方法によって半導体装置を
加熱し、はんだを溶融させて半導体装置とプリント基板
とを接続することによって行っている。その際、これら
の加熱方法では半導体装置とプリント基板の接続箇所だ
けでなく、半導体装置全体が加熱されるようになってい
る。
In recent years, due to the demand for high-density packaging of semiconductor devices, there has been an increase in demand from pin-insertion type devices, in which leads are inserted into through-holes on printed circuit boards, to surface-mount type devices, in which leads are directly mounted on the surface of the printed circuit board. . To mount a semiconductor device on the surface of a printed circuit board, solder is applied to the printed circuit board 7, the semiconductor device is placed on the printed circuit board, and the semiconductor device is heated using methods such as infrared rays or paper reflow to melt the solder. This is done by connecting the semiconductor device and the printed circuit board. At this time, in these heating methods, not only the connection portion between the semiconductor device and the printed circuit board but also the entire semiconductor device is heated.

通常、半導体素子はタブの上に接着剤などを用いて固定
され、半導体素子上の端子はタブの周囲に配設された複
数のリードと金属細線によって電気的に接続されている
。リードフレームはリード群とタブ及び図示されていな
いタブを保持するタブ吊りリードから形成されており、
封止樹脂部によって封止を行った後に、連結されていた
外枠から切り離される。
Usually, a semiconductor element is fixed onto a tab using an adhesive or the like, and terminals on the semiconductor element are electrically connected to a plurality of leads arranged around the tab by thin metal wires. The lead frame is formed of a group of leads, a tab, and a tab suspension lead that holds the tab (not shown),
After sealing with the sealing resin part, it is separated from the connected outer frame.

半導体素子にはシリコン(Si)が用いられており、そ
の線膨張係数は約3 X 10−8/”Cである。
Silicon (Si) is used for the semiconductor element, and its coefficient of linear expansion is about 3 x 10-8/''C.

リードフレームの材料としては、通常4270イ(線膨
張係数約5 X I O−’/’C)或いは銅合金(線
膨張係数約17 X 10−’/℃)などが使用され、
また封止樹脂の線膨張係数は20〜30X10−6/’
Cとなっている。このように、樹脂封止型半導体装置を
構成する各材料の線膨張係数が互いに異っているため、
半導体装置樹脂封止後の冷却や温度サイクル試験時の温
度低下によって、半導体装置内部に熱応力が作用する。
As the lead frame material, 4270I (linear expansion coefficient of about 5 x 10-'/'C) or copper alloy (linear expansion coefficient of about 17 x 10-'/'C) is usually used.
In addition, the linear expansion coefficient of the sealing resin is 20 to 30X10-6/'
It is C. In this way, since the linear expansion coefficients of the materials that make up the resin-sealed semiconductor device differ from each other,
Thermal stress acts inside the semiconductor device due to cooling after the semiconductor device is encapsulated with resin or a temperature drop during a temperature cycle test.

これによって。by this.

タブの反素子搭載面や側面などの樹脂接着界面には、剥
離が生じることがある。
Peeling may occur at resin adhesive interfaces such as the surface opposite to the element mounting surface and the side surface of the tab.

タブと樹脂部との接着界面が剥離している半導体装置を
プリント基板に実装すべく加熱すると、半導体装置全体
が200〜250℃程度の高温にさせされるため、樹脂
が吸湿した水分やリードフレームと樹脂との界面から浸
入した水分などがタブと樹脂との接着界面の剥離部分で
水蒸気化して内部より多大な圧力を作用させる。このた
め、タブの反素子搭載面下部の樹脂に大きな応力が生じ
、応力集中箇所となるタブの反素子搭載面の短軸方向の
両端部から樹脂クラックが発生することになる。
When a semiconductor device whose adhesive interface between the tab and the resin part has peeled off is heated in order to be mounted on a printed circuit board, the entire semiconductor device is heated to a high temperature of about 200 to 250 degrees Celsius, so moisture absorbed by the resin and the lead frame are heated. Moisture that has entered from the interface between the tab and the resin is vaporized at the peeled part of the adhesive interface between the tab and the resin, and a large amount of pressure is applied from inside. Therefore, a large stress is generated in the resin at the lower part of the anti-element mounting surface of the tab, and resin cracks occur from both ends of the tab anti-element mounting surface in the short axis direction, where stress is concentrated.

このようなりフロークラック防止の策として特開昭61
−142760号公報記載の技術がある。
As a measure to prevent such flow cracks, JP-A-61
There is a technique described in Japanese Patent No.-142760.

これはタブの反素子搭載面にこの面から下方に突出する
凸部を形成したものである。
This has a convex portion protruding downward from the surface of the tab opposite to the element mounting surface.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記従来技術では半導体装置の温度サイクル試験を行う
際に、リードフレーム材料と樹脂材料との線膨張係数差
から生じる応力をタブ短軸方向の両端部と凸部の端部に
分散させることによって。
In the above-mentioned conventional technology, when performing a temperature cycle test on a semiconductor device, the stress caused by the difference in coefficient of linear expansion between the lead frame material and the resin material is dispersed to both ends in the short axis direction of the tab and the end of the convex part.

温度サイクル試験時に発生する樹脂クラックの防止に関
して効果がある。
It is effective in preventing resin cracks that occur during temperature cycle tests.

しかしこのような凸部を形成すると実装用加熱時に凸部
の端部に最大応力が発生してしまう、しかもこの端部は
鋭角乃至直角ゆえに応力集中が避けられない。
However, if such a convex portion is formed, the maximum stress will occur at the end of the convex portion during heating for mounting, and since the end portion is an acute angle or a right angle, stress concentration is unavoidable.

一方、凸部を設けても樹脂の厚さが減少しないように半
導体装置の外形寸法を大きくすれば、発生応力を低くす
ることができる。ところが、このように半導体装置自身
を厚くすることは1例えばフラットパッケージのように
薄型を特徴とする面付実装型の半導体装置には適用する
ことができない。
On the other hand, if the external dimensions of the semiconductor device are increased so that the thickness of the resin does not decrease even if the convex portion is provided, the generated stress can be reduced. However, increasing the thickness of the semiconductor device itself in this way cannot be applied to a surface-mounted semiconductor device, which is characterized by its thinness, such as a flat package.

本発明の目的は、半導体装置をプリント基板に実装する
際の加熱によって発生する樹脂クラックを防止し得るリ
ードフレームとこれを用いた半導体装置を提供すること
にある。
An object of the present invention is to provide a lead frame that can prevent resin cracks caused by heating when a semiconductor device is mounted on a printed circuit board, and a semiconductor device using the lead frame.

〔問題点を解決するための手段〕[Means for solving problems]

上記目的は、タブの断面をタブの反素子搭載面において
、タブの板厚を短軸方向の両端部から中心に至るに従っ
て次第に厚くなるような形状とすることによって達成さ
れる。
The above object is achieved by forming the cross section of the tab on the surface opposite to the element mounting surface so that the thickness of the tab gradually increases from both ends in the short axis direction to the center.

本願第1番目の発明はリードフレームに係り、半導体素
子搭載用の長方形の面を有するタブと、このタブと隔て
て配置されかつ半導体素子との電気的接続部を有するリ
ード群とを具備するものであり、タブの反素子搭載側は
少なくとも長辺側両端部の夫々から中央にかけて除々に
タブが肉厚化するようなテーパ面を有するものである。
The first invention of the present application relates to a lead frame, which includes a tab having a rectangular surface for mounting a semiconductor element, and a group of leads arranged apart from the tab and having an electrical connection part with the semiconductor element. The side of the tab opposite to the element mounting side has a tapered surface such that the thickness of the tab gradually increases from at least both ends of the long side toward the center.

本願第2番目の発明もリードフレームに係り、タブの反
素子搭載側にタブ周端よりタブ中央の方が肉厚になるよ
うな少なくとも2面のテーパ面を形成し、タブの幅方向
断面で見ると、両端部と反素子搭載面とで作る角部、並
びに反素子搭載面上のテーパ同士で作、る角部或いはテ
ーパと反素子搭載面の中央平面部とで作る角部が、いず
れも鈍角であることを特徴とする。
The second invention of the present application also relates to a lead frame, in which at least two tapered surfaces are formed on the side opposite to the element mounting side of the tab so that the center of the tab is thicker than the peripheral edge of the tab, and the cross section of the tab in the width direction When you look at it, you can see that the corner formed by both ends and the anti-element mounting surface, the corner formed by the tapers on the anti-element mounting surface, or the corner formed by the taper and the central plane part of the anti-element mounting surface are It is also characterized by an obtuse angle.

本願第3番目の発明は半導体装置に係り、半導体素子と
、この半導体素子搭載用の長方形の面を有するタブと、
タブと隔して配置されかつ半導体素子と電気的に接続さ
れるリード群と、半導体素子及びタブ並びにタブ側のリ
ード群の一部分を覆う封止樹脂部とを具備するものであ
る。そしてタブの反素子搭載側は少なくとも長辺側両端
部の夫夫から中央にかけて除々にタブが肉厚化するよう
なテーパ面を有することが特徴である。
The third invention of the present application relates to a semiconductor device, and includes a semiconductor element, a tab having a rectangular surface for mounting the semiconductor element,
The semiconductor device includes a lead group arranged apart from the tab and electrically connected to the semiconductor element, and a sealing resin part that covers a portion of the semiconductor element, the tab, and the lead group on the tab side. The side of the tab opposite to the element mounting side is characterized by having a tapered surface such that the tab gradually becomes thicker from at least both end portions of the longer side toward the center.

いずれにせよタブの反素子搭載側中央には素子搭載面と
平行な面(中央平面部)が形成されていることが望まし
い。
In any case, it is desirable that a surface parallel to the element mounting surface (central plane part) be formed at the center of the tab on the side opposite to the element mounting surface.

テーパ面は上述の通り最低対向する2面(−組)が必要
だが、更に他の2辺からもテーパを形成し、即ちタブの
四辺の各端部夫々から中央にかけてテーパ面を形成して
も良い。
As mentioned above, the tapered surfaces require at least two opposing sides (-set), but it is also possible to form a taper from the other two sides, that is, form a tapered surface from each end of each of the four sides of the tab to the center. good.

タブの短辺側両端部の夫々にはタブ吊りリードを設けて
も良い。
A tab suspension lead may be provided at each of the short side ends of the tab.

以上の態様は、素子搭載面が長辺及び短辺からなる長方
形であったが、各辺を等しくして、即ち正方形としても
良い、この場合には四辺の夫々から中央にかけてテーパ
面が形成されることが望ましい、更に反素子搭載面には
上記の中央平面部を形成しても良い。
In the above embodiment, the element mounting surface is a rectangle with long sides and short sides, but each side may be made equal, that is, a square. In this case, a tapered surface is formed from each of the four sides to the center. Furthermore, the above-mentioned central plane portion may be formed on the surface opposite to the element mounting surface.

半導体装置においては、樹脂部クラック発生防止の為に
樹脂層の厚さをも考慮することが望ましい0例えば、中
央平面部の下の樹脂厚さをiとし、同一断面内の反素子
搭載面長辺側端部の下の樹脂厚さをjとすると、この比
XはX ” 、j / i > 1の関係となり、しか
もXはタブの幅aと各テーパ面の投影幅dとの関係にお
いてd≧(1−1/X)a / 2の式を満足すること
が望ましい。
In semiconductor devices, it is desirable to consider the thickness of the resin layer in order to prevent the occurrence of cracks in the resin part. If the resin thickness under the side edge is j, then this ratio It is desirable to satisfy the formula d≧(1-1/X)a/2.

テーパ面の寸法は等しくする方が応力均等化の為に望ま
しいが1本発明は特にこれには限定しない、しかしテー
パ幅の異なる場合は上記式のd。
Although it is desirable for the dimensions of the tapered surfaces to be equal in order to equalize stress, the present invention is not particularly limited to this. However, when the taper widths are different, d in the above formula.

a、Xの関係は夫々のテーパ面について満足することが
好ましい。
It is preferable that the relationship between a and X be satisfied for each tapered surface.

〔作用〕[Effect]

タブの反素子搭載面の樹脂接着界面に剥離が発生し、そ
の内部に圧力が作用している場合に発生する応力は、(
社)日本機械学会、昭和59年6月25日発行1機械工
学便覧、A4材料力学基礎編第59頁〜第61頁に記載
があるように、第10図に示す4辺が固定されている長
方形板の等分布荷重でモデル化することによって求める
ことができる。この際の最大応力σ阿^χは長辺の両端
部中央に発生し、その値は次式で与えられる。
When peeling occurs at the resin adhesive interface on the anti-element mounting surface of the tab and pressure is applied inside, the stress that occurs is (
As stated in the Japan Society of Mechanical Engineers, published June 25, 1980, 1 Mechanical Engineering Handbook, A4 Material Mechanics Fundamentals Edition, pages 59 to 61, the four sides shown in Figure 10 are fixed. It can be determined by modeling a uniformly distributed load on a rectangular plate. The maximum stress σa^χ at this time occurs at the center of both ends of the long side, and its value is given by the following equation.

ここで、Pは等分布荷重、aはタブ短辺の長さ。Here, P is the uniformly distributed load, and a is the length of the short side of the tab.

hは樹脂の厚さ、βは長辺と短辺と長さの比で与えられ
る係数を表わす、(1)式から明らかなように、応力を
低減するためには短辺の長さaを短かくするか、或いは
樹脂の厚さhを厚くすることが望ましい。
h is the thickness of the resin, and β is the coefficient given by the ratio of the long side to the short side to the length.As is clear from equation (1), in order to reduce stress, the short side length a should be It is desirable to shorten the length or increase the resin thickness h.

タブの反素子搭載面の樹脂接着界面に剥離が発生し、そ
の内部に圧力が作用してタブの短軸方向の両端部に発生
する応力は、前記(1)式から明らかなように、タブの
反素子搭載面学部の樹脂の板厚を厚くすることによって
低減することができる。
As is clear from equation (1) above, the stress generated at both ends of the tab in the short axis direction due to peeling occurring at the resin adhesive interface on the surface opposite to the element mounting surface and pressure acting inside the tab is as follows: This can be reduced by increasing the thickness of the resin plate on the anti-element mounting surface.

例えば、等分布荷重P = 1 kg/ wr” 、短
辺の長さa=2am、係数β=0.5 、樹脂の厚さh
=1mとした場合、タブの短軸方向の両端部に発生する
最大応力は(1)式より、2kg/m”となる、同じタ
ブ形状で樹脂の厚みを0.1 wxa増やすと1発生す
る最大応力は1.65kg/mm2となり、約20%低
減することができる。
For example, uniformly distributed load P = 1 kg/wr", short side length a = 2 am, coefficient β = 0.5, resin thickness h
= 1 m, the maximum stress generated at both ends of the tab in the short axis direction is 2 kg/m" from equation (1). If the resin thickness is increased by 0.1 wxa with the same tab shape, 1 will occur. The maximum stress is 1.65 kg/mm2, which can be reduced by about 20%.

一般に樹脂封止型半導体装置では、有限要素法による解
析の結果、タブの端部に封止樹脂の静的強度と同レベル
の応力が発生することが明らかになっている。それ数発
生応力を20%低減させるだけでも樹脂クラックの発生
は防止可能となる。
In general, in resin-sealed semiconductor devices, analysis using the finite element method has revealed that stress at the same level as the static strength of the sealing resin is generated at the end of the tab. The generation of resin cracks can be prevented even by reducing the stress generated by 20%.

そこでタブの断面をタブの反素子搭載面において、タブ
の端部から中心に至るに従って次第に板厚が厚くなるよ
うな形状にすることによって、最大応力の発生するタブ
の短軸方向の両端部下の樹脂の厚さを増やすことができ
1発生する応力を低減することができる。韮た、タブの
板厚が端部から中心に至るに従って次第に厚くなってい
ることから、タブ断面においてタブ反素子搭載面に存在
する端部の角度が90度以上となるため端部の角度が9
0度のものと比べて応力集中率が低下する。
Therefore, by making the cross section of the tab on the side opposite to the element mounting surface such that the thickness of the tab gradually increases from the edge to the center, the area under both ends in the short axis direction of the tab where the maximum stress occurs is reduced. The thickness of the resin can be increased and the stress generated can be reduced. In addition, since the thickness of the tab gradually increases from the end to the center, the angle of the end on the tab anti-element mounting surface is 90 degrees or more in the cross section of the tab. 9
The stress concentration rate is lower than that at 0 degrees.

従って、先に述べたタブの短軸方向の両端部に発生する
応力の低減と、応力集中率低下との相乗作用によって、
タブの短軸方向の両端部からの樹脂クラックの発生を防
止することができる。
Therefore, due to the synergistic effect of reducing the stress generated at both ends of the tab in the short axis direction and reducing the stress concentration rate,
It is possible to prevent resin cracks from occurring from both ends of the tab in the short axis direction.

〔実施例〕〔Example〕

以下、本発明の実施例を図面に従って説明する。 Embodiments of the present invention will be described below with reference to the drawings.

第1図は本発明の一実施例に係る半導体装置用リードフ
レームのタブ部分を反素子搭載面2aから見た斜視図で
ある。タブ2の反素子搭載面2aには、タブ2の断面形
、状がタブ2の短軸方向のに長辺側)両端部2eから中
心に至るに従って次第に板厚が厚くなるように、特開昭
59−222951号公報に記載のあるエレクトロフォ
ーミングや、高圧のプレスなどの公知の技術によってテ
ーパ面14が形成されている。尚、8はタブ吊りリード
である。
FIG. 1 is a perspective view of a tab portion of a lead frame for a semiconductor device according to an embodiment of the present invention, viewed from an opposite element mounting surface 2a. The anti-element mounting surface 2a of the tab 2 has a cross-sectional shape (long side in the direction of the short axis of the tab 2) such that the plate thickness gradually increases from both ends 2e to the center. The tapered surface 14 is formed by known techniques such as electroforming described in Japanese Patent No. 59-222951 and high-pressure pressing. Note that 8 is a tab suspension lead.

第2図は第1図に示したリードフレームを使用した半導
体装置の断面図である6本実施例によるリードフレーム
のタブ2の断面形状を反素子搭載面2aにおいて、第1
図に示したようなタブ2の板厚をタブ2の短軸方向の両
端部2eから中心に至るに従って次第に厚くなるように
することによって、タブ2の反素子搭載面2aの短軸方
向の両端部2e下の樹脂5の厚さが増すことから、前記
(1)式で明らか゛なように、タブ2の反素子搭載面2
aの短軸方向の両端部2eに発生する応力を低減するこ
とができる。尚、1は半導体素子、3はリード(タブ吊
りリード8を除く、半導体素子lの両長辺に沿って配置
されたリード3の集合体がリード群となる)、4は各リ
ード3と半導体素子1上のパッドとを結ぶワイヤである
FIG. 2 is a sectional view of a semiconductor device using the lead frame shown in FIG.
By making the plate thickness of the tab 2 gradually thicken from both ends 2e of the tab 2 in the short axis direction to the center as shown in the figure, both ends of the opposite side of the element mounting surface 2a of the tab 2 in the short axis direction Since the thickness of the resin 5 under the portion 2e increases, as is clear from equation (1) above, the anti-element mounting surface 2 of the tab 2 increases.
The stress generated at both ends 2e in the short axis direction of a can be reduced. In addition, 1 is a semiconductor element, 3 is a lead (a collection of leads 3 arranged along both long sides of the semiconductor element l, excluding the tab hanging lead 8, constitutes a lead group), and 4 is each lead 3 and the semiconductor. This is a wire that connects the pad on the element 1.

本実施例によるリードフレームのタブを用いた場合、タ
ブ2長辺の両端部2eに発生する応力は、タブ2の反素
子搭載面下部の樹脂の鳥さが、タブ2の短軸方向の面端
部2eで厚く、タブ2の中心で最も薄くなるように連続
的に変化するため、前記(1)式の樹脂の厚さが一定の
場合より若干高めになる可能性がある。しかしながら、
タブ2の板厚が第8図のように一様な場合、タブ2の短
軸方向の両端部2eの角度が90度であるのに対し、本
実施例のリードフレームのような断面形状のりブ2では
、タブ2の短軸方向の端部2eの角度が90度以上とな
るため応力集中率を低下させることができる。ここで第
8図は従来の半導体装置の実装構成を示し、符号6はは
んだ、7はプリント基板、9はリードフレーム、10は
はんだ接続箇所を示す。
When the tab of the lead frame according to this embodiment is used, the stress generated at both ends 2e of the long side of the tab 2 is caused by the stress generated in the resin at the bottom of the surface opposite to the element mounting surface of the tab 2 in the short axis direction of the tab 2. Since the thickness changes continuously such that it is thick at the end 2e and thinnest at the center of the tab 2, the thickness of the resin in formula (1) may be slightly higher than when it is constant. however,
When the plate thickness of the tab 2 is uniform as shown in FIG. 8, the angle of both ends 2e in the short axis direction of the tab 2 is 90 degrees, whereas the cross-sectional shape of the lead frame of this embodiment is In the tab 2, since the angle of the end 2e in the short axis direction of the tab 2 is 90 degrees or more, the stress concentration rate can be reduced. Here, FIG. 8 shows the mounting structure of a conventional semiconductor device, in which reference numeral 6 indicates solder, 7 indicates a printed circuit board, 9 indicates a lead frame, and 10 indicates a solder connection location.

従って樹脂の厚さが増すことによる応力低下効果と共に
1局部的な応力集中を防ぐことができるので、タブ2の
短軸方向の両端部2eからの樹脂クラックの発生を防止
することができる。また。
Therefore, as well as the stress reduction effect due to the increase in the thickness of the resin, it is possible to prevent stress from concentrating locally, and therefore, it is possible to prevent resin cracks from occurring from both ends 2e of the tab 2 in the short axis direction. Also.

タブ2の板厚を一定のままで本実施例によるリードフレ
ームと同様の効果を得るために、タブ2の板厚を一様に
薄くしたものに比べ、タブ2の短軸方向の両端部2eで
の板厚を薄くして、中心に至るに従って板厚が増すよう
な断面形状のものは。
In order to obtain the same effect as the lead frame according to this embodiment while keeping the thickness of the tab 2 constant, both ends 2e of the tab 2 in the short axis direction are The cross-sectional shape is such that the plate thickness is thinner at the center and the plate thickness increases towards the center.

タブ2に十分な剛性を持たせることができる。このこと
は、樹脂モールド時や実装時の加熱によってタブ2の反
素子搭載面に水蒸気圧が作用した場合に、タブ2の反り
や位置ずれを防止することができ、半導体素子1の破損
やワイヤ4の断線などの不良を起こすことがない。
The tab 2 can have sufficient rigidity. This prevents the tab 2 from warping or shifting when water vapor pressure acts on the surface of the tab 2 opposite to the element mounting surface due to heating during resin molding or mounting. 4. No defects such as wire breakage will occur.

第3図は本発明の他の実施例を示し、半導体装置用リー
ドフレームのタブ2部分を反素子搭載面2aから見た斜
視図で、第4図は第3図に示した本発明によるリードフ
レームを使用した半導体装置の断面図である0本実施例
では、タブ2の反素子搭載面2aの短軸方向の両端部2
eから中心に至るに従って次第に板厚が厚くなる断面形
状の部分(テーパ面14)を、タブ2の短軸方向の両端
部2e、にり所定の長さ以上とし、タブ2の中心部分は
板厚が一定の断面形状となるようにし中央平面部15と
した。第3図のような断面形状のリードフレームであっ
ても、タブ2の短軸方向の両端部2eから板厚が次第に
厚くなる断面部分の長さが1次に述べる条件を満たすこ
とによって十分な効果を得ることができる。
FIG. 3 shows another embodiment of the present invention, and is a perspective view of the tab 2 portion of the lead frame for a semiconductor device viewed from the opposite element mounting surface 2a, and FIG. 4 is a lead according to the present invention shown in FIG. 2 is a cross-sectional view of a semiconductor device using a frame. In this embodiment, both ends 2 in the short axis direction of the anti-element mounting surface 2a of the tab 2
The cross-sectional portion (tapered surface 14) in which the plate thickness gradually increases from e to the center is at both ends 2e in the short axis direction of the tab 2, and has a predetermined length or more, and the central portion of the tab 2 is a plate. The central plane portion 15 was formed to have a cross-sectional shape with a constant thickness. Even with a lead frame having a cross-sectional shape as shown in Fig. 3, the length of the cross-sectional portion where the plate thickness gradually increases from both ends 2e in the short axis direction of the tab 2 satisfies the conditions described in the first section. effect can be obtained.

第3図のような断面形状のリードフレームでは、高い応
力が発生する箇所は第3図に示す短軸方向の両端部2e
とタブ2の板厚が一定となるタブ断面の両端部15eの
2ケ所に存在するようになる。
In a lead frame with a cross-sectional shape as shown in Fig. 3, the locations where high stress occurs are at both ends 2e in the short axis direction shown in Fig. 3.
and at both ends 15e of the tab cross section where the thickness of the tab 2 is constant.

それぞれの箇所に発生にする応力を求めるため。To find the stress generated at each location.

ここでは次のような第5図〜第7図の形状に置き換える
ことにする。端部2eに発生する応力σ1は、第6図の
如くタブ2の板厚がLl一定で短辺の長さが81の形状
のもので、また端部15eに発生する応力σ2は、第7
図の如くタブ2の板厚がLz一定で短辺の長さがazの
形状のものでそれぞれ置き換える。従って、端部2e及
び15aに発生する応力はそれぞれ(1)式より次のよ
うになる。
Here, the shapes will be replaced with the shapes shown in FIGS. 5 to 7 as follows. The stress σ1 generated at the end 2e is due to the tab 2 having a constant plate thickness Ll and the short side length 81 as shown in FIG. 6, and the stress σ2 generated at the end 15e is
As shown in the figure, each tab 2 is replaced with a tab 2 having a constant plate thickness Lz and a short side length az. Therefore, the stresses generated at the ends 2e and 15a are as follows from equation (1).

ここで、al、alはタブ短辺の長さ、ht、 hzは
樹脂の厚さ、Pは等分布荷重、β1.β2は長辺と短辺
との長さの比で与えられる係数を表わす。
Here, al and al are the lengths of the short sides of the tabs, ht and hz are the thicknesses of the resin, P is the uniformly distributed load, and β1. β2 represents a coefficient given by the ratio of the lengths of the long side and the short side.

尚、h 1> h x、 a 1> a z、またβ1
4β2とする。
In addition, h 1 > h x, a 1 > a z, and β1
4β2.

hlをhzの1倍(〉1)とし、端部2eの応力σ1と
端部15eの応力σ2を等しいとおくことによってal
は次のようになる。
By setting hl to 1 times hz (>1) and setting the stress σ1 of the end 2e and the stress σ2 of the end 15e to be equal, al
becomes as follows.

これより、az<a1/Xとなるとβ2〉β1となり、
az>al/xの場合はβ2〈β1となる。すなわち、
第3図の形状のリードフレームにおいて、a x”) 
a 1/ Xとしなければ端部2eより端部15eに発
生する応力が高くなる。従って、第3図の本実施例によ
るリードフレームでは、タブ2の板厚が一定となる断面
下部の樹脂の厚さと、タブ2の端部2e下部の樹脂の厚
さとの比をX(>1)とした場合、タブの端部2eから
中心に至るに従って次第に板厚が厚くなる断面形状の長
さdを次のようにする必要がある。
From this, when az<a1/X, β2>β1,
When az>al/x, β2<β1. That is,
In the lead frame having the shape shown in Fig. 3, a x”)
If a 1/X is not used, the stress generated at the end 15e will be higher than that at the end 2e. Therefore, in the lead frame according to the present embodiment shown in FIG. 3, the ratio of the resin thickness at the bottom of the cross section where the thickness of the tab 2 is constant to the resin thickness at the bottom of the end 2e of the tab 2 is set to X (>1 ), it is necessary to set the length d of the cross-sectional shape in which the plate thickness gradually increases from the end 2e to the center of the tab as follows.

d≧(1−1/x) a/2        (5)タ
ブの板厚が次等に厚くなる断面形状の長さdが(5)式
の条件を満たすことによって、端部15eに発生する応
力が端部2eに発生する応力より低くなり、ここからの
樹脂クラックの発生を防止することができる。
d≧(1-1/x) a/2 (5) Stress generated in the end portion 15e when the length d of the cross-sectional shape where the plate thickness of the tab becomes thicker satisfies the condition of equation (5). is lower than the stress generated at the end portion 2e, making it possible to prevent resin cracks from occurring there.

第9図は本発明の策を講じない場合のクラック発生の様
子を示している。符号11は剥離を示す。
FIG. 9 shows how cracks occur when the measures of the present invention are not taken. Reference numeral 11 indicates peeling.

上記本発明の各実施例はこのようなりラックの発生を防
止するものである。
Each of the embodiments of the present invention described above prevents the occurrence of racks.

第11図は従来技術にて述べた反素子搭載面への凸部形
成の構造を比較例として挙げたものである。第12図は
第11図の部分拡大図である。このようにタブ2の反素
子搭載面に前述の凸部13を設けた樹脂封止型の半導体
装置では、プリント基板表面に実装する際の加熱によっ
て凸部13の端部13eに最大応力が発生するようにな
る。また、樹脂の厚さを確保するために、タブ2の端部
近傍を削って板厚を薄くすることによって凸部を設ける
ようにすると、タブ2の薄くなった部分は剛性が低下す
るために、樹脂封止を行う時や実装時の加熱によって発
生する水蒸気圧によって、タブ2が位置ずれや反りを起
こし、半導体素子1の破損や金属細線の断線などの不良
を起こすことがある。
FIG. 11 shows, as a comparative example, a structure in which a convex portion is formed on the surface opposite to the element mounting surface described in the prior art. FIG. 12 is a partially enlarged view of FIG. 11. In the resin-sealed semiconductor device in which the above-mentioned convex portion 13 is provided on the surface opposite to the element mounting surface of the tab 2, maximum stress is generated at the end portion 13e of the convex portion 13 due to heating during mounting on the surface of the printed circuit board. I come to do it. In addition, in order to ensure the thickness of the resin, if the protrusion is provided by cutting the vicinity of the end of the tab 2 to make the plate thinner, the thinner part of the tab 2 will have a lower rigidity. The tab 2 may be misaligned or warped due to water vapor pressure generated by heating during resin sealing or mounting, which may cause defects such as damage to the semiconductor element 1 or breakage of thin metal wires.

また1本発明の上記実施例によるリードフレームでは、
第5図のようにタブ2の端部2e及び15gの角度11
11.  θ2が共に90度以上となるため、第12図
のような凸部13を設けた場合の端部の角度θ3に比べ
て、タブ端部での応力集中率が低くなる。従って、局部
的な応力集中も起こりにくくなり、応力低減効果と共に
樹脂クラックの発生防止に対して効果的である。
Furthermore, in the lead frame according to the above embodiment of the present invention,
Angle 11 of ends 2e and 15g of tab 2 as shown in FIG.
11. Since both θ2 are 90 degrees or more, the stress concentration rate at the tab end is lower than the angle θ3 at the end when the convex portion 13 as shown in FIG. 12 is provided. Therefore, local stress concentration is less likely to occur, which is effective in reducing stress and preventing the occurrence of resin cracks.

本発明は上記の第13図〜第19図の各種の態様が可能
である。第13図、第14図の各実施例はタブ平面が正
方形であり、この場合はテーパ面14は4辺端部のいず
れからも中央に向けて形成されることになる。第15図
や第16図はタブ平面が正方形ではないが、この場合に
四辺の夫々からテーパ面14を形成することは一向に差
し支えない、但し、第13図〜第16図いずれの態様も
、対向する一組のテーパ面(従ってこれらの各側ではテ
ーパ面は2組)の形状、角度は応力に偏りが生じないよ
うに等しくすることが好ましい。
The present invention can have various embodiments shown in FIGS. 13 to 19 above. In each of the embodiments shown in FIGS. 13 and 14, the tab plane is square, and in this case, the tapered surface 14 is formed from all four side edges toward the center. In FIGS. 15 and 16, the tab plane is not square, but in this case, there is no problem in forming the tapered surface 14 from each of the four sides.However, in any of the embodiments in FIGS. It is preferable that the shapes and angles of the set of tapered surfaces (therefore, there are two sets of tapered surfaces on each side) to be the same so that the stress is not biased.

以上の実施例ではテーパ面14の数は一つの断面内に2
つであったが、本発明はこれに限定されず第17図の如
く段階的な角度をもってテーパ面14を形成しても良い
、更に以上の説明ではテーパ面14は断面が直線的であ
ったが、要するに応力集中箇所の低減という目的の下に
は第18図や第19図の如く断面を曲線的に形成しても
差し支えない。
In the above embodiment, the number of tapered surfaces 14 is 2 in one cross section.
However, the present invention is not limited to this, and the tapered surface 14 may be formed with stepwise angles as shown in FIG. However, for the purpose of reducing stress concentration points, the cross section may be formed in a curved shape as shown in FIGS. 18 and 19.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明によれば、半導体装置を表面実
装する際の加熱によってタブの反素子搭載面の短軸方向
の両端部に発生する応力を低減することができ、かつ局
部的な応力集中も緩和することができるので、樹脂クラ
ックの発生を防止する効果がある。
As described above, according to the present invention, it is possible to reduce the stress generated at both ends of the short axis direction of the anti-element mounting surface of the tab due to heating when surface mounting a semiconductor device, and to reduce the stress generated at both ends of the tab in the short axis direction. Since concentration can also be alleviated, there is an effect of preventing the occurrence of resin cracks.

【図面の簡単な説明】[Brief explanation of drawings]

第1図、第3図、第13図、第14図、第15図、及び
第16図はいずれも本発明の実施例に係るリードフレー
ムのタブ部分の斜視図、第2図は第1図のタブを適用し
た本発明の実施例に係る半導体装置の断面図、第4図は
第3図のタブを適用した本発明の実施例に係る半導体装
置の断面図、第5図は第3図の実施例に係るタブの断面
図、第6図及び第7図は第5図のタブの応力計算用のモ
デル断面図、第8図は従来例に係る半導体装置の実装断
面図、第9図は同じ〈従来例における樹脂クラックの発
生状況を説明する半導体装置の断面図、第10図は応力
計算用モデルの斜視図、第11図は従来例に係る半導体
装置の断面図、第12図は第11図の装置のタブ断面図
、第17図。 第18図、及び第19図は本発明の実施例に係るタブの
断面図である。 1・・・半導体装置、2・・・タブ、2a・・・反素子
搭載面、2e・・・タブ長辺端部、3・・・リード、4
・・・ワイヤ。 5・・・樹脂、8・・・タブ吊りリード、9・・・リー
ドフレ第 l  囮 $ 2 囚 !・・律導体 4・・・テーパ面 第 :6 目 第 4 り 第 5 囚 2・・クツ” 2a・・・タデ長述儲駅咋 第 6 口 率 7 図 /、ζe 乎8 目 1、・半導休業)  5・・・を指 2・・・タブ    6・・・);んだ第 92 第 10  囚 奉 11  国 l・・・牟導俸粂1 2・・タフ゛ 第13国     第14日 (丁Iじ−
1, 3, 13, 14, 15, and 16 are all perspective views of the tab portion of the lead frame according to the embodiment of the present invention, and FIG. 4 is a sectional view of a semiconductor device according to an embodiment of the present invention to which the tab of FIG. 3 is applied, and FIG. 5 is a sectional view of a semiconductor device according to an embodiment of the invention to which the tab of FIG. FIGS. 6 and 7 are cross-sectional views of a model for stress calculation of the tab in FIG. are the same〈A cross-sectional view of a semiconductor device illustrating the occurrence of resin cracks in a conventional example, Fig. 10 is a perspective view of a stress calculation model, Fig. 11 is a cross-sectional view of a semiconductor device according to a conventional example, and Fig. 12 is a cross-sectional view of a semiconductor device according to a conventional example. FIG. 17 is a tab sectional view of the device of FIG. 11; 18 and 19 are cross-sectional views of a tab according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...Semiconductor device, 2...Tab, 2a...Anti-element mounting surface, 2e...Tab long side end, 3...Lead, 4
...Wire. 5...Resin, 8...Tab hanging lead, 9...Lead friend No. 1 Decoy $2 Prisoner! ... Ritsu conductor 4... Tapered surface No. 6: 6th No. 5 Prisoner 2... 2a... Tade Nagashieki Ekikui No. 6 Mouth rate 7 Figure/, ζe 乎 8 No. 1, ・5... 2...Tab 6...); 92nd 10th prisoner 11 country 1... 1st country 2... 13th country 14th day (Ding Iji-

Claims (1)

【特許請求の範囲】 1、半導体素子搭載用の長方形の面を有するタブと、該
タブと隔てて配置されかつ前記半導体素子との電気的接
続部を有するリード群とを具備するリードフレームにお
いて、前記タブの反素子搭載側は少なくとも長辺側両端
部の夫々から中央にかけて除々に該タブが肉厚化するよ
うなテーパ面を有することを特徴とするリードフレーム
。 2、前記タブの反素子搭載側中央には前記素子搭載面と
平行な面を形成していることを特徴とする特許請求の範
囲第1項記載のリードフレーム。 3、前記テーパ面は四辺の各端部夫々から中央にかけて
形成していることを特徴とする特許請求の範囲第1項記
載のリードフレーム。 4、前記タブの短辺側両端部の夫々にタブ吊リードを設
けることを特徴とする特許請求の範囲第1項記載のリー
ドフレーム。 5、前記素子搭載面は正方形であり、反素子搭載面の中
央には該素子搭載面と平行な面を有することを特徴とす
る特許請求の範囲第3項記載のリードフレーム。 6、半導体素子搭載用の長方形の面を有するタブと、該
タブと隔てて配置されかつ前記半導体素子との電気的接
続部を有するリード群とを具備するリードフレームにお
いて、前記タブの反素子搭載側にタブ周端よりタブ中央
の方が肉厚になるような少なくとも2面のテーパ面を形
成し、前記タブの幅方向断面で見ると、両長辺側端部と
反素子搭載面とで作る角部、並びに反素子搭載面上のテ
ーパ同士で作る角部或いは該テーパと反素子搭載面中央
平面部とで作る角部が、いずれも鈍角であることを特徴
とするリードフレーム。 7、半導体素子と、該半導体素子搭載用の長方形の面を
有するタブと、該タブと隔てて配置されかつ前記半導体
素子と電気的に接続されるリード群と、前記半導体素子
及びタブ並びに該タブ側の前記リード群の一部分を覆う
封止樹脂部とを具備する半導体装置において、前記タブ
の反素子搭載側は少なくとも長辺側両端部の夫々から中
央にかけて除々に該タブが肉厚化するようなテーパ面を
有することを特徴とする半導体装置。 8、前記タブの反素子搭載側中央には前記素子搭載面と
平行な中央平面部を形成していることを特徴とする特許
請求の範囲第7項記載の半導体装置。 9、前記中央平面部の下の樹脂厚さiと、同一断面内の
前記反素子搭載面長辺側端部の下の樹脂厚さjとの比x
が x=j/i>1 の関係にあり、かつ該xは該タブの幅a及び前記各テー
パ面の投影幅dとの間に d≧(1−1/x)a/2 の関係を有することを特徴とする特許請求の範囲第7項
記載の半導体装置。
[Scope of Claims] 1. A lead frame comprising a tab having a rectangular surface for mounting a semiconductor element, and a group of leads disposed apart from the tab and having an electrical connection part with the semiconductor element, A lead frame characterized in that a side of the tab opposite to the element mounting side has a tapered surface such that the tab gradually becomes thicker from at least both ends of the long side toward the center. 2. The lead frame according to claim 1, wherein a surface parallel to the element mounting surface is formed at the center of the tab on the side opposite to the element mounting surface. 3. The lead frame according to claim 1, wherein the tapered surface is formed from each end of each of the four sides to the center. 4. The lead frame according to claim 1, wherein a tab suspension lead is provided at each of the short side ends of the tab. 5. The lead frame according to claim 3, wherein the element mounting surface is square and has a surface parallel to the element mounting surface at the center of the opposite element mounting surface. 6. In a lead frame comprising a tab having a rectangular surface for mounting a semiconductor element, and a group of leads disposed apart from the tab and having an electrical connection part with the semiconductor element, the tab is opposite to the element mounting part. At least two tapered surfaces are formed on the side so that the center of the tab is thicker than the peripheral edge of the tab, and when viewed in cross section of the tab in the width direction, both long side ends and the opposite element mounting surface are formed. A lead frame characterized in that the corner formed by each other, the corner formed by the tapers on the anti-element mounting surface, or the corner formed by the taper and the central plane part of the anti-element mounting surface are all obtuse angles. 7. A semiconductor element, a tab having a rectangular surface for mounting the semiconductor element, a group of leads arranged apart from the tab and electrically connected to the semiconductor element, the semiconductor element and the tab, and the tab. In the semiconductor device, the tab has a sealing resin portion that covers a portion of the lead group on the side, and the side of the tab opposite to the element mounting side is such that the thickness of the tab gradually increases from at least both ends of the long side toward the center. A semiconductor device characterized by having a tapered surface. 8. The semiconductor device according to claim 7, wherein a central plane portion parallel to the element mounting surface is formed at the center of the tab on the side opposite to the element mounting surface. 9. Ratio x of the resin thickness i under the central plane part and the resin thickness j under the long side end of the anti-element mounting surface in the same cross section
has a relationship of x=j/i>1, and x has a relationship of d≧(1-1/x)a/2 with the width a of the tab and the projected width d of each tapered surface. A semiconductor device according to claim 7, characterized in that the semiconductor device has:
JP62063816A 1987-03-20 1987-03-20 Lead frame and semiconductor device Pending JPS63232361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62063816A JPS63232361A (en) 1987-03-20 1987-03-20 Lead frame and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62063816A JPS63232361A (en) 1987-03-20 1987-03-20 Lead frame and semiconductor device

Publications (1)

Publication Number Publication Date
JPS63232361A true JPS63232361A (en) 1988-09-28

Family

ID=13240269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62063816A Pending JPS63232361A (en) 1987-03-20 1987-03-20 Lead frame and semiconductor device

Country Status (1)

Country Link
JP (1) JPS63232361A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111448653A (en) * 2017-12-13 2020-07-24 三菱电机株式会社 Semiconductor device and power conversion device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111448653A (en) * 2017-12-13 2020-07-24 三菱电机株式会社 Semiconductor device and power conversion device

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