JPS63230589A - 坩堝の洗浄方法 - Google Patents
坩堝の洗浄方法Info
- Publication number
- JPS63230589A JPS63230589A JP6173987A JP6173987A JPS63230589A JP S63230589 A JPS63230589 A JP S63230589A JP 6173987 A JP6173987 A JP 6173987A JP 6173987 A JP6173987 A JP 6173987A JP S63230589 A JPS63230589 A JP S63230589A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- phosphoric acid
- iridium
- single crystal
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 239000002994 raw material Substances 0.000 claims abstract description 20
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 19
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 13
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 13
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 229910000457 iridium oxide Inorganic materials 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 6
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 6
- 230000006698 induction Effects 0.000 claims description 4
- 230000012010 growth Effects 0.000 abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052697 platinum Inorganic materials 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 3
- 239000000126 substance Substances 0.000 abstract 1
- 239000010419 fine particle Substances 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 8
- YJZATOSJMRIRIW-UHFFFAOYSA-N [Ir]=O Chemical group [Ir]=O YJZATOSJMRIRIW-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- LIXXICXIKUPJBX-UHFFFAOYSA-N [Pt].[Rh].[Pt] Chemical compound [Pt].[Rh].[Pt] LIXXICXIKUPJBX-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6173987A JPS63230589A (ja) | 1987-03-16 | 1987-03-16 | 坩堝の洗浄方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6173987A JPS63230589A (ja) | 1987-03-16 | 1987-03-16 | 坩堝の洗浄方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63230589A true JPS63230589A (ja) | 1988-09-27 |
| JPH0571554B2 JPH0571554B2 (enExample) | 1993-10-07 |
Family
ID=13179860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6173987A Granted JPS63230589A (ja) | 1987-03-16 | 1987-03-16 | 坩堝の洗浄方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63230589A (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102430552A (zh) * | 2011-11-28 | 2012-05-02 | 天通控股股份有限公司 | 一种晶体生长用坩埚的清理方法 |
| CN109092783A (zh) * | 2018-08-14 | 2018-12-28 | 信阳师范学院 | 一种清洗瓷坩埚的方法 |
| US10995102B2 (en) * | 2019-08-21 | 2021-05-04 | Meishan Boya Advanced Materials Co., Ltd. | Crystals for detecting neutrons, gamma rays, and X rays and preparation methods thereof |
| CN114130753A (zh) * | 2021-11-24 | 2022-03-04 | 枣庄睿诺电子科技有限公司 | 一种去除坩埚有机材料残留的工艺方法 |
| CN117552017A (zh) * | 2023-12-02 | 2024-02-13 | 青岛科技大学 | 一种氧化镓晶体生长用铱金坩埚的清理方法 |
| US12018399B2 (en) | 2019-08-21 | 2024-06-25 | Meishan Boya Advanced Materials Co., Ltd. | Crystals for detecting neutrons, gamma rays, and x rays and preparation methods thereof |
| US12054848B2 (en) | 2019-08-21 | 2024-08-06 | Meishan Boya Advanced Materials Co., Ltd. | Crystals for detecting neutrons, gamma rays, and x rays and preparation methods thereof |
-
1987
- 1987-03-16 JP JP6173987A patent/JPS63230589A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102430552A (zh) * | 2011-11-28 | 2012-05-02 | 天通控股股份有限公司 | 一种晶体生长用坩埚的清理方法 |
| CN109092783A (zh) * | 2018-08-14 | 2018-12-28 | 信阳师范学院 | 一种清洗瓷坩埚的方法 |
| US10995102B2 (en) * | 2019-08-21 | 2021-05-04 | Meishan Boya Advanced Materials Co., Ltd. | Crystals for detecting neutrons, gamma rays, and X rays and preparation methods thereof |
| US12018399B2 (en) | 2019-08-21 | 2024-06-25 | Meishan Boya Advanced Materials Co., Ltd. | Crystals for detecting neutrons, gamma rays, and x rays and preparation methods thereof |
| US12054848B2 (en) | 2019-08-21 | 2024-08-06 | Meishan Boya Advanced Materials Co., Ltd. | Crystals for detecting neutrons, gamma rays, and x rays and preparation methods thereof |
| CN114130753A (zh) * | 2021-11-24 | 2022-03-04 | 枣庄睿诺电子科技有限公司 | 一种去除坩埚有机材料残留的工艺方法 |
| CN117552017A (zh) * | 2023-12-02 | 2024-02-13 | 青岛科技大学 | 一种氧化镓晶体生长用铱金坩埚的清理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0571554B2 (enExample) | 1993-10-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69932760T2 (de) | Verfahren und Vorrichtung zur Herstellung eines Siliciumstabes mit einer Struktur hergestellt durch gerichtete Erstarrung | |
| JPS63230589A (ja) | 坩堝の洗浄方法 | |
| US3870472A (en) | Method and apparatus for growing crystals by annealing the crystal after formation | |
| JP2005288332A (ja) | 多結晶シリコンロッドの破砕方法 | |
| CN101748481B (zh) | 一种多晶硅料的提纯方法 | |
| JP2020105033A (ja) | 鉄ガリウム合金結晶の結晶粒界の評価方法 | |
| JPS60191094A (ja) | Bνルツボの前処理方法 | |
| DE1251283B (de) | Vorrichtung zum gleichzeitigen Herstellen einer Vielzahl von einkristallinen Halbleiterkörpern | |
| Wollesen et al. | Impact of graphite and alumina ceramic thermal insulation on the growth of undoped sapphire plates by micro-pulling down | |
| EP0760024B1 (de) | Verfahren und vorrichtung zur gewinnung rissfreier kristalle | |
| JPS6212692A (ja) | 単結晶半導体の成長方法 | |
| JP6472768B2 (ja) | フォトルミネッセンス法によるシリコン結晶中の不純物定量方法および多結晶シリコンの選別方法 | |
| Ursu et al. | Growth of large ultratransparent KCl single crystals | |
| JP2016199447A (ja) | 酸化アルミニウム単結晶の製造方法 | |
| JP5040812B2 (ja) | るつぼ内で凝固した物質の除去方法、及び、るつぼ再生方法 | |
| Thirumavalavan et al. | Growth of large diameter lithium niobate single crystals by czochralski method | |
| JPS6230698A (ja) | 単結晶成長法 | |
| JPH0725561B2 (ja) | 石英ガラスルツボ | |
| DE19652171A1 (de) | Verfahren zur thermischen Isolation induktiv geheizter Tiegel und Schmelzen in der Kristallzucht mit kohlenstoffgebundenen Kohlenstofffasern | |
| JPH0525834B2 (enExample) | ||
| Center | Growth of Nonlinear Optical Crystal KTiOP04 from High Temperature Solution | |
| JPS62119198A (ja) | 磁場印加単結晶回転引き上げ装置 | |
| EP0725978A1 (en) | Quartz glass jig for the heat treatment of silicon wafers and method and device for producing same | |
| JPH0710672A (ja) | 単結晶の製造方法 | |
| SU727469A1 (ru) | Способ обработки кристаллов |