JPS63224377A - Magnetoresistance element - Google Patents
Magnetoresistance elementInfo
- Publication number
- JPS63224377A JPS63224377A JP62059351A JP5935187A JPS63224377A JP S63224377 A JPS63224377 A JP S63224377A JP 62059351 A JP62059351 A JP 62059351A JP 5935187 A JP5935187 A JP 5935187A JP S63224377 A JPS63224377 A JP S63224377A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- magnetic field
- electrode
- field detection
- detection pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000001514 detection method Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 description 2
- 241000345998 Calamus manan Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 235000012950 rattan cane Nutrition 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は磁気抵抗素子に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a magnetoresistive element.
従来の技術
この種の素子は従来、第4図、第5図に示す様な構造に
なっていた。図において1はガラス・シリコン等の材質
の絶縁性基板であり、2はニッケル鉄等の材質の磁界検
知抵抗パターン、3は電極である。磁界検知パターンを
適当に配置することによって2つのパターンに印加され
る磁界をそれぞれ変え、それによって異なる抵抗値変化
をさせ、その差動を電圧変化として読み取るものである
。Prior Art Elements of this type have conventionally had structures as shown in FIGS. 4 and 5. In the figure, 1 is an insulating substrate made of a material such as glass or silicon, 2 is a magnetic field detection resistor pattern made of a material such as nickel iron, and 3 is an electrode. By appropriately arranging the magnetic field detection patterns, the magnetic fields applied to the two patterns are changed, resulting in different resistance changes, and the difference is read as a voltage change.
第4図において、電極の配置は磁界検知パターンに平行
に基板下部に寄せである。In FIG. 4, the electrodes are arranged parallel to the magnetic field detection pattern toward the bottom of the substrate.
第6図は、第4図の磁界検知パターンを2相にしたもの
であシ、電極は第3図と同様に基板下部に集中している
。FIG. 6 shows a two-phase version of the magnetic field detection pattern shown in FIG. 4, and the electrodes are concentrated at the bottom of the substrate as in FIG. 3.
発明が解決しようとする問題点
前記の素子はすべて電極が磁界検知パターンの下部に配
置されている。第6図は前記の素子6の着磁ロータ4へ
の取付は図であるが、電極部を磁界検知パターンの下部
に配置しているため、高さ方向について小型化を行なう
際、磁界検知パターンを小さくすることは可能であって
も電極部を小さくすることは困難であシ、小型化に限界
があった。Problems to be Solved by the Invention In all of the above devices, the electrodes are arranged under the magnetic field detection pattern. FIG. 6 shows the attachment of the element 6 to the magnetizing rotor 4, but since the electrode part is arranged below the magnetic field detection pattern, when downsizing in the height direction, the magnetic field detection pattern Although it is possible to reduce the size of the electrode portion, it is difficult to reduce the size of the electrode portion, and there is a limit to miniaturization.
本発明はこのような問題点を解決するもので、素子の高
さを低くし、小型化することを目的とするものである。The present invention is intended to solve these problems, and aims to reduce the height and size of the device.
問題点を解決するための手段
本発明は上記の点に鑑み、電極部の配置を磁界検知パタ
ーンに対して左右方向に引き出したものである。Means for Solving the Problems In view of the above points, the present invention is such that the arrangement of the electrode portions is drawn out in the left-right direction with respect to the magnetic field detection pattern.
作用
上記の構成によりつくられた素子は、電極が磁界検知パ
ターンに対して左右方向に配置しであるため、素子の高
さについて、磁界検知パターンの短縮が可能な限り小型
化が可能となる。Function: Since the element manufactured with the above configuration has electrodes arranged in the left-right direction with respect to the magnetic field detection pattern, the height of the element can be reduced as much as possible by shortening the magnetic field detection pattern.
実施例
第1図、第2図は本発明の一実施例である。第1図は第
4図に対応した実施例であシ、第2図は第6図に対応し
た実施例である。共に電極13の配置を基板1の磁界検
知パターン2の左右方向に引き出している。また第3図
は、第1図、第2図の素子6の着磁ロータ4への取り付
は図であるが、電極部を磁界検知パターンの左右方向に
配置しているため、素子高さが着磁ロータの幅とほぼ同
等の長さとなっている。Embodiment FIGS. 1 and 2 show an embodiment of the present invention. FIG. 1 is an embodiment corresponding to FIG. 4, and FIG. 2 is an embodiment corresponding to FIG. 6. In both cases, the arrangement of the electrodes 13 is drawn out in the left-right direction of the magnetic field detection pattern 2 on the substrate 1. In addition, although FIG. 3 is a diagram showing the attachment of the element 6 to the magnetizing rotor 4 in FIGS. is approximately the same length as the width of the magnetized rotor.
発明の効果
以上の様に、電極を磁界検知パターンに対して左右方向
に配置することによυ、素子の高さを磁界検知パターン
の長さに応じて小さくすることが可能となり、小型化が
可能となる。As described above, by arranging the electrodes in the left and right direction with respect to the magnetic field detection pattern, it is possible to reduce the height of the element according to the length of the magnetic field detection pattern, resulting in miniaturization. It becomes possible.
第1図、第2図は本発明の実施例の磁気抵抗素子の磁界
検知パターン及び電極配置を示す平面図、第3図は本発
明の磁気抵抗素子の着磁ロータへの取り付は状態を示す
斜視図、第4図、第6図は従来の磁気抵抗素子の磁界検
知パターン及び電極の配置を示す平面図、第6図は従来
の磁気抵抗素子の着磁ロータへの取り付は状態を示す斜
視図である。
1・・・・・・電気絶縁基板、2・・・・・・磁界検知
パターン、13・・・・・・電極。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名l
″ ′を気M、縁籐植
2− 磁界按矩パターン
第2図
第3図1 and 2 are plan views showing the magnetic field detection pattern and electrode arrangement of a magnetoresistive element according to an embodiment of the present invention, and FIG. 3 shows a state in which the magnetoresistive element of the present invention is attached to a magnetized rotor. 4 and 6 are plan views showing the magnetic field detection pattern and electrode arrangement of a conventional magnetoresistive element, and Fig. 6 shows a state in which a conventional magnetoresistive element is attached to a magnetized rotor. FIG. 1... Electrical insulating substrate, 2... Magnetic field detection pattern, 13... Electrode. Name of agent: Patent attorney Toshio Nakao and 1 other person
`` '', edge rattan planting 2- Magnetic field arrangement rectangular pattern Fig. 2 Fig. 3
Claims (1)
をパターンに対して左右方向に配置した磁気抵抗素子。A magnetoresistive element in which a magnetic field detection pattern and electrodes are formed on a substrate, and the electrodes are arranged horizontally with respect to the pattern.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62059351A JPS63224377A (en) | 1987-03-13 | 1987-03-13 | Magnetoresistance element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62059351A JPS63224377A (en) | 1987-03-13 | 1987-03-13 | Magnetoresistance element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63224377A true JPS63224377A (en) | 1988-09-19 |
Family
ID=13110773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62059351A Pending JPS63224377A (en) | 1987-03-13 | 1987-03-13 | Magnetoresistance element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63224377A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5955082A (en) * | 1982-09-22 | 1984-03-29 | Aichi Tokei Denki Co Ltd | Magneto-resistance effect element |
JPS59159565A (en) * | 1983-03-02 | 1984-09-10 | Sankyo Seiki Mfg Co Ltd | Magnetic detector |
-
1987
- 1987-03-13 JP JP62059351A patent/JPS63224377A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5955082A (en) * | 1982-09-22 | 1984-03-29 | Aichi Tokei Denki Co Ltd | Magneto-resistance effect element |
JPS59159565A (en) * | 1983-03-02 | 1984-09-10 | Sankyo Seiki Mfg Co Ltd | Magnetic detector |
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