JPS63226086A - Magnetoresistance element - Google Patents
Magnetoresistance elementInfo
- Publication number
- JPS63226086A JPS63226086A JP62059359A JP5935987A JPS63226086A JP S63226086 A JPS63226086 A JP S63226086A JP 62059359 A JP62059359 A JP 62059359A JP 5935987 A JP5935987 A JP 5935987A JP S63226086 A JPS63226086 A JP S63226086A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- detecting patterns
- pattern
- electrical insulating
- field detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000010030 laminating Methods 0.000 claims abstract description 3
- 238000001514 detection method Methods 0.000 claims description 18
- 230000001681 protective effect Effects 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000010276 construction Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は磁気抵抗素子に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a magnetoresistive element.
従来の技術
この種の素子は従来、第3図、第4図に示す様な構造に
なっていた。図において1は電気綿様性基板であり、2
は磁界検知パターン、3は電極、6は保護膜である。Prior Art Elements of this type have conventionally had structures as shown in FIGS. 3 and 4. In the figure, 1 is an electric cotton-like substrate, and 2
3 is a magnetic field detection pattern, 3 is an electrode, and 6 is a protective film.
第4図において、磁界検知パターンの抵抗値を上げるた
め、検知パターンの折シ返し数を多くしている。In FIG. 4, in order to increase the resistance value of the magnetic field detection pattern, the number of turns of the detection pattern is increased.
また、第3図において、検知パターン及び電極部の構造
は一層とだっている。Furthermore, in FIG. 3, the structures of the detection pattern and the electrode portion are even more prominent.
発明が解決しようとする問題点
前記の素子は検知パターンの抵抗値を上げ出力電圧を大
きくするためにパターン部の折り返し数を多くすること
によってパターン全長を長くしている。しかし実際に素
子に印加される磁界は1パターンにおいては中央部が最
も強く左右に離れるほど磁界が弱くなっている。即ち検
知パターンの折り返しが多いほどパターンの全幅は大き
くなり抵抗値変化は理論値よシ小さくなる。また検知パ
ターンの折り返しを多くすることによって素子が大きく
なることも考えられる。Problems to be Solved by the Invention In the above-mentioned device, in order to increase the resistance value of the detection pattern and increase the output voltage, the total length of the pattern is increased by increasing the number of folds of the pattern portion. However, in one pattern, the magnetic field actually applied to the element is strongest at the center and becomes weaker as it moves farther left and right. That is, the more the detection pattern folds, the larger the total width of the pattern becomes, and the resistance value change becomes smaller than the theoretical value. It is also conceivable that the element becomes larger by increasing the folding of the detection pattern.
本発明はこのような問題を解決するもので、磁界に対す
る感度を上げ、小型化することを目的とするものである
。The present invention is intended to solve these problems, and aims to increase the sensitivity to magnetic fields and reduce the size.
問題点を解決するだめの手段
本発明は上記の点に鑑み、磁界検知パターンと電気絶縁
膜を積層することによって検知パターンの全長を長くし
、抵抗値を上げたものである。Means for Solving the Problems In view of the above-mentioned problems, the present invention increases the total length of the detection pattern by laminating the magnetic field detection pattern and the electrical insulating film, thereby increasing the resistance value.
作用
上記の構造によシつくられた素子は、磁界検知パターン
が積層されているためパターン部が幅を持たず磁界に対
する感度が上がると共に、検知パターンの幅によって素
子が大型化することも防ぐことができる。Effect In the element made with the above structure, since the magnetic field detection pattern is laminated, the pattern part has no width, which increases the sensitivity to the magnetic field, and also prevents the element from increasing in size due to the width of the detection pattern. Can be done.
実施例
第1図、第2図は本発明の一実施例である。電気絶縁性
基板1上に磁界検知パターン2を形成し、その上に電気
絶縁膜6を重ねる。更に磁界検知パターン2、電気絶縁
膜6を交互に重ね、最上部を保護膜5でおおう。ここで
、各磁界検知パターン2は直列の配置となるようにパタ
ーン接続部4で接続している。Embodiment FIGS. 1 and 2 show an embodiment of the present invention. A magnetic field detection pattern 2 is formed on an electrically insulating substrate 1, and an electrically insulating film 6 is placed thereon. Further, magnetic field detection patterns 2 and electrical insulating films 6 are alternately stacked, and the top portion is covered with a protective film 5. Here, each magnetic field detection pattern 2 is connected by a pattern connection part 4 so as to be arranged in series.
発明の効果
以上の様に、磁界検知パターンを積層することによって
パターン部が幅を持たず、磁界に対する感度が上がると
共に、検知パターンの幅が最少限ですむため、素子の小
型化が可能となる。As described above, the effect of the invention is that by stacking the magnetic field detection patterns, the pattern part does not have a width, increasing the sensitivity to magnetic fields, and since the width of the detection pattern can be minimized, it is possible to miniaturize the device. .
第1図、第2図は本発明の一実施例の磁気抵抗素子の断
面図及びパターンを示す平面図、第3図。
第4図は従来の磁気抵抗素子の断面図及びパターンを示
す平面図である。
1・・・・・・電気絶縁基板、2 ・・・・磁界検知パ
ターン、3・・・電極、4・・・・・パターン接続部、
5・・・・保護膜、6・・・・・・電気絶縁膜。
代理人の氏名 弁理士 中 尾 敏 男 はが1名/−
1気艶縁墓載
2−、磁界積卸パターン
3− 電 極
牛−パターン費M、邪
5−保′v1膜
第1図 6−屹気絶球膜第2図
第3図1 and 2 are a sectional view and a plan view showing a pattern of a magnetoresistive element according to an embodiment of the present invention, and FIG. 3 is a plan view showing a pattern. FIG. 4 is a cross-sectional view and a plan view showing a pattern of a conventional magnetoresistive element. 1... Electrical insulating substrate, 2... Magnetic field detection pattern, 3... Electrode, 4... Pattern connection part,
5...protective film, 6...electrical insulating film. Name of agent: Patent attorney Toshio Nakao, 1 person/-
1-Kishin-edge grave mounting 2-, magnetic field loading/unloading pattern 3- Electrode cow-pattern cost M, evil 5-protection'v1 film Fig. 1 6-Bun Qi Zetsu ball film Fig. 2 Fig. 3
Claims (1)
して構成した磁気抵抗素子。A magnetoresistive element constructed by alternately laminating magnetic field detection patterns and electrical insulating films on a substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62059359A JPS63226086A (en) | 1987-03-13 | 1987-03-13 | Magnetoresistance element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62059359A JPS63226086A (en) | 1987-03-13 | 1987-03-13 | Magnetoresistance element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63226086A true JPS63226086A (en) | 1988-09-20 |
Family
ID=13110992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62059359A Pending JPS63226086A (en) | 1987-03-13 | 1987-03-13 | Magnetoresistance element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63226086A (en) |
-
1987
- 1987-03-13 JP JP62059359A patent/JPS63226086A/en active Pending
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