JPS6322391B2 - - Google Patents

Info

Publication number
JPS6322391B2
JPS6322391B2 JP4896683A JP4896683A JPS6322391B2 JP S6322391 B2 JPS6322391 B2 JP S6322391B2 JP 4896683 A JP4896683 A JP 4896683A JP 4896683 A JP4896683 A JP 4896683A JP S6322391 B2 JPS6322391 B2 JP S6322391B2
Authority
JP
Japan
Prior art keywords
transistor
write
drain
memory cell
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4896683A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59175098A (ja
Inventor
Hiroshi Kuwabara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP58048966A priority Critical patent/JPS59175098A/ja
Publication of JPS59175098A publication Critical patent/JPS59175098A/ja
Publication of JPS6322391B2 publication Critical patent/JPS6322391B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Landscapes

  • Read Only Memory (AREA)
JP58048966A 1983-03-25 1983-03-25 書き込み／読出し回路 Granted JPS59175098A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58048966A JPS59175098A (ja) 1983-03-25 1983-03-25 書き込み／読出し回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58048966A JPS59175098A (ja) 1983-03-25 1983-03-25 書き込み／読出し回路

Publications (2)

Publication Number Publication Date
JPS59175098A JPS59175098A (ja) 1984-10-03
JPS6322391B2 true JPS6322391B2 (ko) 1988-05-11

Family

ID=12818017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58048966A Granted JPS59175098A (ja) 1983-03-25 1983-03-25 書き込み／読出し回路

Country Status (1)

Country Link
JP (1) JPS59175098A (ko)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130884A (en) * 1980-03-14 1981-10-14 Toshiba Corp Semiconductor memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130884A (en) * 1980-03-14 1981-10-14 Toshiba Corp Semiconductor memory device

Also Published As

Publication number Publication date
JPS59175098A (ja) 1984-10-03

Similar Documents

Publication Publication Date Title
US6178116B1 (en) Memory cell of non-volatile semiconductor memory device
US4630085A (en) Erasable, programmable read-only memory device
JP3247402B2 (ja) 半導体装置及び不揮発性半導体記憶装置
JP2588483B2 (ja) Ｍｏｓ技術を応用した電圧スイッチ回路
US4443718A (en) Nonvolatile semiconductor memory with stabilized level shift circuit
JPH07122998B2 (ja) 半導体メモリ素子の高電圧発生回路
JPH0642318B2 (ja) 半導体メモリ
JP3762658B2 (ja) 不揮発性半導体記憶装置の駆動方法
JPS6315679B2 (ko)
JPS63188896A (ja) 不揮発性半導体メモリ
JPH0814993B2 (ja) 半導体記憶装置
KR910000389B1 (ko) 불휘발성 반도체 기억장치
JPH0323999B2 (ko)
JP2606941B2 (ja) 不揮発性メモリの書込み回路
JPS6120958B2 (ko)
JPH0757486A (ja) Ｎａｎｄ型不揮発性メモリの駆動方法
JPS5850700A (ja) Ｅｐｒｏｍ書込み回路
JPS6322391B2 (ko)
US5691944A (en) Non-volatile semiconductor memory device
JPS6035758B2 (ja) 不揮発性半導体メモリ
JPH0715798B2 (ja) 半導体記憶装置
JP3103457B2 (ja) 不揮発性半導体記憶装置及びその書き込み方法ならびに読み出し方法
JPH0666114B2 (ja) 半導体集積回路
JPS5929448A (ja) プログラマブル・リ−ド・オンリ−・メモリ−
JPH0519239B2 (ko)