JPS63223181A - Production of amorphous silicon film - Google Patents

Abstract

PURPOSE:To efficiently produce an amorphous silicon film having desired characteristics at a desired rate of film formation, by decomposing a silicon compd. fed at a specified flow rate together with a carrier gas by glow discharge so as to attain a specified rate of film deposition. CONSTITUTION:A gaseous mixture contg. at least a silicon compd. such as SiH4 and a carrier gas such as Ar is fed and the silicon compd. is decomposed by glow discharge to form an amorphous silicon film on a substrate. The decomposition by glow discharge is carried out under conditions satisfying formula I [where Dr is the rate of deposition of the amorphous silicon film, etaA is the rate of decomposition of the silicon compd., FA is the flow rate of the silicon compd. fed, FB is the flow rate of the carrier gas fed, V is the volume of a glow discharge space and (l) is the distance between the substrate and a glow discharge electrode] so as to regulate the rate of decomposition of the silicon compd. in the glow discharge space to 20-90%. The ratio of the flow rate FB of the carrier gas to the flow rate FA of the silicon compd. (FB/FA) is regulated to 0.1-3.

Description

DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to a method for manufacturing an amorphous silicon film.

BACKGROUND OF THE INVENTION In recent years, amorphous films have attracted attention because of their excellent physical, mechanical, and chemical properties. In particular, amorphous silicon (hereinafter referred to as A-8T) based semiconductor films have many uses such as photosensitive layers of photoreceptors, solar cells, thin film transistors, and optical sensors. Formation of such an a-3i semiconductor film is performed by a method using glow discharge decomposition of a silicon compound such as hydrogenated silicon gas, that is, a so-called plasma CVD method.

In particular, hydrogenated A-81 films are attracting attention as a device material having a large area.

For example, a cylindrical substrate surface is coated with a by plasma CVD method.
The following method can be considered as a method for forming a -8i-based semiconductor film. That is, as shown in FIG. 1, in the vacuum chamber 4 of the glow discharge device 6, a drum-shaped substrate 1 is set so as to be vertically rotatable, and the substrate 1 is heated from the inside to a predetermined temperature with a heater 7. It has become. A cylindrical high-frequency electrode 9 is arranged around the substrate 1, facing the substrate 1, and gas outlet ports 5 are provided almost uniformly over the entire surface of the electrode 9. A glow discharge is generated between the two by the high frequency power source 8.

brought about. In addition, 16 in the figure is hydrogenated silicon 93,
14 is a carrier gas supply source such as Ar, 15 is an impurity gas (for example, B, H, or PH3) supply source, and 17 is each flowmeter. In this glow discharge device, first, the surface of a support, such as an At substrate 1, is cleaned, and then placed in a vacuum chamber 4, and the gas pressure in the vacuum chamber 4 is adjusted to 10 Torr and evacuated. The substrate 1 is heated and maintained at a predetermined temperature, particularly 100 to 350°C (preferably 150 to 300°C). Next, using a high purity inert gas as a carrier gas, SiH4
Gas or S i F4 gas, and if necessary, CH, B, Hj, etc. as impurity gases are added to the gas mixing chamber 1.
MHI) is applied via 8. As a result, each of the above reaction gases is decomposed by glow discharge between the electrode 9 and the substrate 1, and is deposited on the substrate 1 as a-St or impurity-doped a-8t:H.

By the way, the film formed by the general plasma CVD method is of better quality than the film formed by other methods such as sputtering or vapor deposition, but the film formation speed is slower than that of the other methods mentioned above. In addition, it is desired to prevent microcrystalization and defects in the formed film and to improve the film quality, especially for electrophotography using A-8i film. It is desired to improve the characteristics of photoreceptors such as photosensitivity, charging ability, and durability.Furthermore, in the thin film formation process, it is desired to improve the conversion efficiency from raw material gas to thin film.
It is also desired to suppress the formation of a-8t powder.

However, until now, the chemical reactions during discharge and the deposition process of thin films have not been fully elucidated, and the equipment and operational conditions for forming A-8i semiconductor films have been empirically determined for each device. (Actually, the current situation is that the number of films is determined by two. Attempts to form high-quality films at arbitrary film-forming speeds while controlling various film-forming conditions (film-forming parameters) have not yet been successful.

Therefore, it has been desired to develop a film manufacturing method that can solve the above-mentioned problems in film formation while appropriately controlling each film forming parameter.

The purpose of the present invention is to be able to produce a film having desired characteristics at a desired film forming rate while appropriately controlling film forming conditions, and to improve the efficiency of conversion from raw material gas to thin film. An object of the present invention is to provide a method for manufacturing an amorphous silicon film that can suppress the formation of amorphous silicon.

D0 Structure of the Invention The present invention provides a method for producing an amorphous silicon film in which an amorphous silicon film is formed on a substrate by glow discharge decomposition by supplying a gas containing at least a silicon compound and a carrier gas, in which the following formula C1 is satisfied. The amorphous material is characterized in that the glow discharge decomposition is carried out under such conditions that the decomposition rate of the silicon compound in the glow discharge space is 4 to 90% and the following formula (n) is satisfied. The present invention relates to a method of manufacturing a silicon-based film.

[However, Dr is the deposition rate of the amorphous silicon film, lm is the decomposition rate of the silicon compound, Fm is the supply flow rate of the silicon compound, F is the supply flow rate of the carrier gas, and ■ is the glow discharge space. The volume, t, is the distance between the substrate and the glow discharge electrode. ]

CuI2 formula: 0.1≦Fs/Fmu≦3 [However, FA and Fl are the same as described above. ] As a result of studying the deposition process of a-8i film by glow discharge decomposition C2, the present inventor found that the film deposition rate is proportional to the amount of diffusion and transport of active species generated by decomposition of silicon compounds to the substrate. I found it.

That is, according to the knowledge obtained by the present inventors, the film deposition rate of a silicon-based film is determined by the amount of silicon compound decomposed per unit time (denoted as E) and the rate of arrival of active species to the substrate by diffusion transport. (denoted as F).

This point will be explained in detail. First, assume that the above E and F are represented by the following formulas (m) and [■], respectively.

E-ηmu, Fmu... (m) F-convex 1τ/
L... [■] Here, dam is the decomposition rate of the silicon compound, FA is the supply flow rate of the silicon compound, D is the diffusion coefficient of active species, and τ is the average of the active species in the glow discharge space. The residence time, L, is the distance between the substrate and the glow discharge electrode.

Furthermore, it is assumed that D and τ are expressed by the following equations (V) and (VI).

Dd: 1 /P・・・・・・・・・[v]tccP
V/ (F m + F A ) ”” (VI ] Here, ■ is the volume of the glow discharge space, and F is the supply flow rate of the carrier gas.

If the film deposition rate is Dr, then the following CI) formula is obtained from the above [■] to CVI) formulas.

DrcWA"FA ・E/lC6]1-""CI) From this C=, the design conditions and operating conditions of the glow discharge device,
That is, it is understood that the film deposition rate can be determined quantitatively by changing the values of film forming parameters such as FA, F, V, etc. Also, as mentioned later! ＝、The decomposition rate of silicon compound 1μ is quantitatively determined by each film forming parameter (
It is a two-determined value. Therefore, according to the present invention, it is possible to form an A-8T film at a desired film formation rate, and to manufacture a high quality film at maximum speed (adjustment and control of the Nigellow discharge device is possible). It becomes possible.

E. Examples (2) Two examples C in which the present invention is applied to a cylindrical electrode type plasma CVD apparatus will be explained.

The glow discharge decomposition device 3 in FIG. The following relationship holds true.

VcC(t+r)"-r"-L(L+2r
) ----(■) [If formula 43 is substituted into formula CI), the following formula [I] is obtained.

D r t W A ・F A 8 / m・・・・
- [■] As shown in formula [)1], the film deposition rate is also controlled in a cylindrical electrode type plasma CVD apparatus. The results of this experiment are shown below.

Using the glow discharge device 6 shown in FIG. 1, the vacuum chamber 4 was evacuated by operating a vacuum pump (not shown) connected to the exhaust port 10. Next ζ2, flow 1 of SiH gas from cylinder 16
Supplied with FstH4 (corresponding to FA above), cylinder 1
4 to argon (Ar) gas at a flow rate of 200 sccm (
5standard c, c, par m1nute
) and introduced into a cylindrical electrode type plasma CVD apparatus. In addition, the high frequency power supply J from the high frequency power supply 8 is
00W, and the distance t between the aluminum base 1 and the electrode 9
are 2.0 cm, 3.0 cm, and 4.0 cm, and the base 1
The radius of the electrode is rwstW&, and the length L of the electrode 9 is 553. The butterfly valve 11 provided between the exhaust port 10 and the vacuum pump is adjusted to change the pressure inside the vacuum chamber I4, that is, the reaction pressure P to 0.5 to 1.5 Torr, and the substrate 1 is heated.
A 1-81 film was formed on the surface of. SiH using a quadruple scratch type mass spectrometer 55.

In addition to measuring the decomposition rate η5IH4 (corresponding to the above-mentioned dam), the a-8L film deposition rate Dr (μg/hr) on the aluminum substrate 1 was measured using a Fisher scope. Note that no impurity gas was used in this experiment.

The S i H4 decomposition rate dam was measured using a quadruple bucket mass spectrometer (MS
Using a Q-150A model (manufactured by Japan Vacuum Technology Co., Ltd.), the amount of S i H4 was measured when the high frequency power source Rf was turned on and off, and was determined from the following equation.

・・・・・・・・・("lX) Here, 5iH1, Ar are m/ex30, respectively
40 is the peak value of the mass spectrum.

That is, when SiH is measured by mass spectroscopy, S I H
Since a peak appears at -, this peak value is used to determine the amount of SiH4 present in the discharge space.

The measurement results are as shown in FIGS. 2 and 3.

Figure 2 shows Dr/G vaginal full and ηs1[
4 is plotted.

As is clear from Figure 2; 2. Each data is distributed on the same curve, so Dr/, 1+tO/A dl
-ηaii14, or Drc(ηgii4.G feather)l holds true.

Here, F s 1114 (i.e., FA in the above formula [I]) and Far (i.e., F in the above [■] formula;
, ) are constant, so it can be said that the above-mentioned formula [I] has been confirmed by the experimental results. In other words, a-St
The film forming rate Dr in the process of forming the system film can now be quantitatively controlled by the decomposition rate of the silicon compound, the inter-electrode distance t1, and the radius r of the substrate.

FIG. 6 shows the measurement results under the condition of 1/PLmO, 5 (Torr-cm). Here, η
siB, ” 0.632 condition (; set,
This condition setting is F 5iIII4 ss o, s 73
This can be achieved by maintaining the relationship J"'.

In FIG. 6, while maintaining each of the above conditions, F 5
The correlation between Fsil14 and Dr7η1+π/A was shown when the value of il14 and Rf was increased.

As can be seen from Figure 3, 1:, Dr 7aT ■) lcap
s I II.

/ FglII4 + FAys or DrcCF
The relationship s1n4- 汀笥可1/rTπη+FA holds true, and therefore the film forming rate Dr in the process of forming the a-81 film is Fs i 1 as expressed by the above formula [I].
It can be said that it has been confirmed that 14 dependence is exhibited.

The above experimental results show that λ, a due to reglow discharge decomposition,
It is believed that the deposition rate of the -8ii-based film is proportional to the amount of active species diffused and transported to the substrate due to the decomposition of the silicon compound.

be understood.

From the CI) formula and [I] formula, the relationship shown in the following CX) formula holds between the film deposition rate Dr, the silicon compound supply flow rate FA, and the carrier gas supply flow rate FB.

DrcCF/6) 1r----・-----・-t,
[X] From this, set Fm/Fm to an appropriate value l:
Therefore, it is understood that the film deposition rate Dr can be controlled. That is, by reducing F, /Fm (reducing the ratio of carrier gas supply flow rate), the film deposition rate can be increased and productivity can be improved.

Here, in the present invention, the value of F, /Fum is set to 0.1≦Fl
It is extremely important to limit the range to /Fm≦3 (more preferably 0.15≦Fm≦2).

Here, FB/Fum is the flow rate per unit time at a given pressure and temperature. (volume) ratio.

That is, if F, /Fm is smaller than the above range, the discharge will become unstable. On the other hand, if FB/Fum is larger than the above range, the film deposition rate Dr will be low, resulting in poor productivity.
In addition, a microcrystalline phase is included in the amorphous phase, and the homogeneity of the a-8t film is impaired. When such a film is used in a photoreceptor, the charging ability is reduced.

On the other hand, in ζ2 of the present invention, the value of FB/Fum is limited to the above range, so this problem does not occur, and the a-8t system has high film forming speed, good productivity, and high quality. Manufacture membranes.

In the present invention, it is important that the decomposition rate of the silicon compound is limited to between 20% and 90% in the a-8t film forming process. This range is 40% to 85%
It is more preferable to set it between. That is, the film deposition rate Dr
is proportional to the decomposition rate ηm as shown in the CI) formula and [I] formula, so in the present invention, by limiting the decomposition rate ηm to the above range, the film deposition rate Dr can be quantitatively determined to the desired value. It is possible to manufacture an a-8i film having a uniform and predetermined quality with desired productivity and good reproducibility.

From the relationship of I) rccvm, the larger lm, the larger the value of Dr, and the better the productivity. However, if 'Flip4 is too large (more than 190%), a microcrystalline phase is included in the amorphous phase, impairing the homogeneity of the a-8i film. leads to a decrease in charging ability. Also, if η is too small, less than 20%,
In addition to a decrease in the film formation rate Dr, the amount of hydrogen that forms SiH bonds increases in the a-8t:H film, resulting in a decrease in photosensitivity and an increase in the required exposure amount.

In the present invention, the film deposition rate Dr can be controlled by controlling the value of η, and therefore the above problem does not occur.

The decomposition rate η of the silicon compound can be controlled as follows.

The process of forming an a-8t film by glow discharge decomposition of SiH is considered as follows. That is, SiH4+s(
high speed) −* S i H−+e (low speed) −−−−(
XI) ζ2 excites SiH, and the excited Si
H, * is 4 S i H4 * → si * + sth? +SI
It is thought that the 5LHn* (n-0 to 3) produced by decomposing as H, ** * +SiH3+sa,...[expletive] is deposited on the substrate surface to form an a-8i film. It will be done.

However, * represents an electron, and * represents an excited state.

It will be understood that the rate of progress of the above reaction depends on e (fast), ie, the energy of the electrons produced by glow discharge decomposition.

The decomposition rate η81M4 of SIH, (XI), depends on the reaction rate of formula [I] and therefore on the energy of electrons generated by glow discharge decomposition (two things).

The following equation is known as a guideline for the energy W that electrons receive from electrolysis.

However, e: Charge of electron λe: Free path of electron (λe, ct/p) V: Potential between electrodes P: Reaction pressure t: Distance between electrodes Rf: High frequency supply power 2: Impedance of the device.

[From the formula, using a certain device, the high frequency supply power Rf
It is understood that keeping constant and keeping pt constant means keeping the energy received by the electron from the electric field constant.

Also, by variously changing P, t, J%v, z,
The energy that the electron receives from the electric field can be changed, so S
iH, (silicon compound) decomposition rate η5iH4 (ηmu)
Various changes are made.

Therefore, all the parameters that determine the film forming rate Dr shown in the above formula [I] can be controlled quantitatively, and it becomes possible to manufacture an a-8t film at a desired film forming rate.

FIG. 4 shows another plasma CVD apparatus 2 used in the present invention.

The overall configuration is almost the same as the device shown in FIG. 1 (in FIG. 4, the same reference numerals as in FIG. 1 indicate the same functional members). The difference from the device in Figure 1 is that the vacuum chamber 1
9 is provided with an exhaust chamber 12 having an enlarged inner diameter. As a result, the internal volume of the vacuum chamber 19 on the exhaust side increases, and silicon compound gas, carrier gas, etc. introduced into the vacuum chamber 19 are sucked out from the exhaust port 11, and the pressure inside the chamber is maintained at a predetermined value. More uniform and stable suction is possible when holding.

FIG. 5 shows a flat plate type glow discharge device that can be used in the present invention. - In the vacuum chamber 44 of this device 45, the flat substrate 40 is fixed on the substrate holding part 41, and the substrate 40 is held by the heater 42.
can be heated to a predetermined temperature. Substrate 40
A high frequency electrode 17 having gas outlet ports provided almost uniformly over the entire surface is disposed facing the cage 2, and a glow discharge is generated between the high frequency electrode 17 and the substrate 40. In addition, 20.21. in the figure.
22.26.27.28.29.66.68 are each valve, 61 is S i H or a gaseous silicon compound supply source, 32 is an impurity gas (for example, B, H6, PH8, etc.)
source, 66 is Ar or H! It is a carrier gas supply source such as

In this glow discharge device, first, after cleaning the surface of a support, for example, an At substrate 40 (placed in two vacuum chambers 44, pulp 66 is applied so that the gas pressure in the vacuum chamber 44 becomes 10-6 Torr). The substrate 40 is heated to a predetermined temperature, particularly from 100 to 350°C (preferably from 150 to 350°C).
Heat and maintain at 300°C. Next, using a high purity inert gas as a carrier gas, SiH4 gas or Si
F, gas and, if necessary, CH4 as an impurity gas.
%B, H, etc. at appropriate gas frequency voltage (e.g. 13.56M
Apply Hri. As a result, each of the above reaction gases is decomposed by glow discharge between the electrode 46 and the substrate 40°, and the a-8i
Alternatively, it is deposited on the substrate 40 as impurity-doped a-8l:H. The deposited film thickness is Taz step (Taylor
- Manufactured by Hobson Co.).

In this glow discharge device, assuming that t is the distance between the base 40 and the high-frequency electrode 43, the following relationship holds between the volume V of the discharge space and t.

yocz・・・・・・・・・・[Beans] When the (xrv) formula is substituted into the CI) formula, the following [X73 formula is obtained.

Dr. ηmu・FA/A stone Kuhudori……(X
V) As a result, even in a flat plate type glow discharge device,
The above formula (X) holds true, so in the present invention, FB/F
By limiting the film deposition rate Dr to the above range, the film deposition rate Dr can be determined quantitatively. Further, by limiting the value of η to the range of the present invention, the film deposition rate Dr can be controlled.

That is, it is understood that the present invention can also be applied to a flat plate type glow discharge device, and the same effects as those already described in the explanation of the cylindrical type glow discharge device can be obtained.

Note that the above formulas f and I) are the same in principle even for devices having shapes other than the so-called concentric cylindrical type and parallel plate type,
This is considered to be true.

The amorphous silicon thin films produced in the present invention include a-8t:H, Kame-8i:F, a-81:H:F,
Boron doped P type a-8i: H0), phosphorus doped n
Examples include types a-8i:HΦ) and a-8i:C.

Further, examples of the silicon compound used in the present invention include S t H4, S i ! H1l,S I F,,S
All commonly used silicon sources can be used, such as iHF.

As the carrier gas, for example, argon, hydrogen, etc. can be used.

Further, as the substrate on which the a-81 film is formed, any of conductive materials, insulating materials, and semiconductor materials can be used.

The a-8i layer provided on the substrate does not have to be a single layer, and may be coated with another a-8i layer on the substrate via another a-81 layer.
An 8i-based film may be formed and a plurality of mutually different a-8t-based films may be laminated. For example, when an a:stc:a film is provided on the substrate and an a-81:H film is provided on it, or when an a-81:H film is provided on the substrate and an a-8IC:H film is provided on it. This is the case.

Next, an electrophotographic photoreceptor was manufactured using the a-8t film produced by the method of the present invention, and its characteristics were investigated.

Examples 1 to 5, Comparative Examples 1.2 Using the cylindrical electrode type plasma CVD apparatus shown in FIG.
Each electrophotographic photoreceptor (Examples 1 to 5, Comparative Example 1.2) having the configuration shown in the figure was manufactured.

First, a clean M support with a smooth surface was placed in a reaction (vacuum) chamber of a glow discharge device. Inside the reaction tank 10-
' Evacuate to a high vacuum level on a Torr stand, and lower the support temperature to 20
After heating to 0°C, high purity Ar gas was introduced and the temperature was 0.5 T.
Frequency 13.56 MHz under orr backpressure.

High frequency power with a power density of 0.04 W/d was applied, and preliminary discharge was performed for 15 minutes. Then SiH4 and BtH
A reaction gas consisting of a was introduced and the flow rate ratio was adjusted (Ar
a-3t, which plays a charge blocking function by decomposing +5iI (, +B, H,) mixed gas by glow discharge:
HNφ) 50 and an a-8i:H layer (B) 51 having charge generation, potential holding, and charge transport functions were formed to a predetermined thickness at respective deposition rates. After that, SiH, and CH,
was supplied and the flow rate ratio was adjusted (Ar+SiH4+CH4
) The mixed gas is decomposed by glow discharge and a-8SC of a predetermined thickness is formed.
Two additional :H surface modification layers 52 were provided to complete the 'Junko' photographic photoreceptor.

The structure of each layer is as follows.

Surface modified layer 52: C content -60 atomic% (St+C-1
00 atomic %) film thickness 0.3 μm haze photoconductive layer 51: B doping amount was determined by glow discharge decomposition method.
m, m, /FsHI4 xo, 5 vol-ppm [H
]-30 atomic% (St+a 100 atomic%) Film thickness! 19μ charge blocking layer 50: B doping amount determined by glow discharge decomposition method: A/hi4-1500voLppm (H)-30 at% (S1+H-100 at%) Film thickness-1μ The film forming parameters of the photoconductive layer of the photoreceptor of Comparative Example 1.2 were set as follows.

Distance between electrodes: 2m3. ocWI Electrode length: L-55.0cIn Drum-shaped substrate temperature: Ts=250℃ Diporan flow fi
t: Fm, i, x2. OXl0- Scam current t: Fsi114 m 400 sec Diporan flow t Current run flow rate "B!Is /F B i B4mO
, 5 vol.ppm High frequency supply voltage: Rf-400 W In producing the photoconductive layer, the above film forming parameters were kept constant, and the argon flow tFArr was varied as shown in FIG. This (from 2, FAr/F
The values of sili4 and the silane decomposition rate IFBin4 were varied and measured, and the film deposition rate Dr was also measured.

Furthermore, two photoconductors C of each Example and Comparative Example were used, and the charging potential Vo and sensitivity of 160G were measured. Each measurement result O is as shown in FIG.

The film deposition rate Dr was measured using a Fisch scope.
The silane decomposition rate η5ill was measured using a mass spectrometer (manufactured by E'R Inc.) and the method described above.

In the photoreceptor characteristic test, measurements were made as described above.

Charged potential: Vo (V) Current flowing into the photoreceptor! Photoreceptor surface potential when charged with a constant current of 150-A.

Sensitivity: E'g3 (1uxssec) Exposure amount required to attenuate the photoreceptor surface potential of 600V to SOV.

Light emitted from a halogen lamp with a color temperature of 3000 was used for exposure, with long wavelength light components of 630 nm or more being sharply cut using a dichroic mirror.

Figure 8 shows changes in silane decomposition rate and film deposition rate with respect to changes in FAr/Fsii4.

Furthermore, FAr/li'si! 14. Figure 9 shows changes in charging potential and sensitivity with respect to changes in silane decomposition rate.

As is clear from Figures 7 to 9, FA r/Fls
iH.

The value of 0.1≦FArA′,in,≦3 (more preferably 0.15≦FAr/”5iII4≦2), and the decomposition rate of the silicon compound is 20 to 90% (more preferably 40%). ~85%) ζ2, the film deposition rate can be increased, the discharge state is stable, a high quality a-8i film can be obtained, and furthermore, good charge level characteristics and sensitivity characteristics can be obtained. It becomes possible to manufacture a photoreceptor having the following characteristics.

6. Effects of the Invention In the present invention, glow discharge decomposition is performed under conditions that satisfy the above formula CI), so that a film having desired characteristics can be produced with good reproducibility while appropriately controlling the film forming conditions. It can be manufactured at a film forming speed of .

In addition, glow discharge decomposition is performed so that the decomposition rate of the silicon compound in the glow discharge space is 20 to 90% and the above formula (II) is satisfied. It is possible to form a high-quality film in a vacuum, increase the conversion efficiency from raw materials to a thin film, suppress the generation of powder, and prevent unstable discharge.

[Brief explanation of the drawing]

The drawings show an embodiment of the present invention, in which Fig. 1 is a schematic cross-sectional view of a glow discharge coating, and Figs. graph. Figures 4 and 5 are schematic sectional views of other glow discharge devices, Figure 6 is a partial sectional view showing an example of an electrophotographic photoreceptor, and Figure 7 shows changes in characteristics of each electrophotographic photoreceptor. Figure 8 is a graph showing changes in silane decomposition rate and film deposition rate against changes in FAr/FsiH4, and Figure 8 is a graph showing changes in FAr/FsiH4 versus changes in silane decomposition rate. It is a graph showing changes in charging potential and sensitivity. In addition, in the symbols shown in the drawings, 1......Cylindrical substrate 2.6.45......Glow discharge device 4.19
．． 44...Vacuum chamber 5...Gas outlet a, 42...Heater 9.46...Electrode 8...・High frequency power source 16.14.15...Gas supply source 17.20.
21.22.27.28.29.66・・・・・・・・・
. . . Valve 40 . . . Flat substrate 55 . . . Mass spectrometer. Agent Patent Attorney Hiroshi Aisaka Figure 1 Figure 3 FSiH4 (sccm) FAI/FSiH4 Figure 9

Claims (1)

[Scope of Claims] 1. A method for producing an amorphous silicon film in which an amorphous silicon film is formed on a substrate by glow discharge decomposition by supplying a gas containing at least a silicon compound and a carrier gas, wherein the following formula [I] is The amorphous silicon is characterized in that the glow discharge decomposition is performed so that the decomposition rate of the silicon compound in the glow discharge space is 20 to 90% under the conditions satisfied and the following formula [II] is satisfied. Method for manufacturing membranes. [I] Formula: Dr■η_A・F_A・√(V)/l√(F_B+F_
A) [where, Dr is the deposition rate of the amorphous silicon film, η_A is the decomposition rate of the silicon compound, F_
A is the supply flow rate of the silicon compound, F_B is the supply flow rate of the carrier gas, V is the volume of the glow discharge space, and l is the distance between the base body and the glow discharge electrode. ] [II] Formula: 0.1≦F_B/F_A≦3 [However, F_A and F_B are the same as described above. ]