JPS63223178A - Production of amorphous silicon film - Google Patents

Abstract

PURPOSE:To produce an amorphous silicon film having desired characteristics at a desired rate of film formation, by decomposing a silicon compd. fed together with a carrier gas by glow discharge at a specified rate of decomposition within a specified residence time so as to attain a specified rate of deposition. CONSTITUTION:A gaseous mixture contg. at least a silicon compd. such as SiH4 and a carrier gas such as Ar is fed and the silicon compd. is decomposed by glow discharge to form an amorphous silicon film on a substrate. The decomposition by glow discharge is carried out under conditions satisfying the formula [where Dr is the rate of deposition of the amorphous silicon film, etaA is the rate of decomposition of the silicon compd., FA is the flow rate of the silicon compd. fed, FB is the flow rate of the carrier gas fed, V is the volume of a glow discharge space and (l) and the distance between the substrate and a glow discharge electrode] so as to regulate the rate of decomposition of the silicon compd. in the glow discharge space to 20-90% and the average residence time of the gaseous mixture in the glow discharge space to 0.1-1.2sec.

Description

DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to a method for manufacturing an amorphous silicon film.

BACKGROUND OF THE INVENTION In recent years, amorphous films have attracted attention because of their excellent physical, mechanical, and chemical properties. In particular, amorphous silicon (hereinafter referred to as a-3i).

)-based semiconductor films have a variety of uses, such as photosensitive layers of photoreceptors, solar cells, thin film transistors, and optical sensors. Formation of such an a-3i semiconductor film is performed by a method using glow discharge decomposition of a silicon compound such as hydrogenated silicon gas, that is, a so-called plasma CVD method. In particular, hydrogenated a-3i films are attracting attention as a device material having a large area.

For example, a cylindrical substrate surface is coated with a by plasma CVD method.
The following method can be considered as a method for forming a -3i semiconductor film. That is, as shown in FIG. 1, a drum-shaped substrate 1 is vertically rotatably placed in a vacuum chamber 4 of a glow discharge device 3, and a heater 7 is used to heat the substrate 1 from the inside to a predetermined temperature. It has become. A cylindrical high-frequency electrode 9 is disposed around and facing the substrate 1, and the electrode S is provided with gas exclusive ports 5 almost uniformly over its entire surface. The substrate 1 is used as an electrode opposite to the electrode 9, and a glow discharge is generated between the two by the high frequency electrode 8. In addition, 13 in the figure is a supply source of SiH, which is hydrogenated silicon gas, 14 is a carrier gas supply source such as Ar, 15 is an impurity gas (for example, B z Hb or PH3) supply source, 1
7 is each flow meter. In this glow discharge device, first, the surface of the support, for example, the A1% plate 1, is cleaned, and then the temperature is maintained at a constant temperature, particularly from 100 to 350°C (preferably from 150 to 150°C).
Heat and maintain at 300°C. Next, using a high purity inert gas as a carrier gas, S i H4 gas or S
iF4 gas and CT as impurity gas if necessary
13. IBzHb, etc. are passed through the gas mixing chamber 18 as appropriate.
56M1lz) is applied. As a result, each of the above reaction gases is decomposed by glow discharge between the electrode 9 and the substrate 1, and a-
3i or impurity doped a-3i: substrate 1 as IT
deposit on top.

By the way, films formed by the plasma CVD method are generally of better quality than films formed by other methods such as sputtering or vapor deposition, but the film forming speed is considerably slower than that of the other methods mentioned above. There are production problems. In addition, prevention of microcrystalization and defects in the formed film,
It is desired to improve film quality, and in particular, in electrophotographic photoreceptors using a-3'i-based films, improvements in characteristics such as photosensitivity, charging ability, and durability are desired. Furthermore, in the thin film formation process, the conversion efficiency from raw material gas to thin film is improved, and a-
It is also desirable to suppress the formation of 3i powder.

However, until now, the chemical reactions during discharge and the thin film deposition process have not been fully elucidated, and the equipment and operational conditions for forming a-3i semiconductor films have been empirically determined for each device. However, attempts to form high-quality films at high film-forming speeds while controlling various film-forming conditions (film-forming parameters) have not yet been successful.

Therefore, it is desired to develop a film manufacturing method that can solve the above-mentioned problems in film formation while appropriately controlling each film forming parameter.

C.9 Purpose of the Invention An object of the present invention is to be able to produce a film having desired characteristics at a desired film forming rate while appropriately controlling film forming conditions, and to increase the conversion efficiency from raw material gas to a thin film. An object of the present invention is to provide a method for manufacturing an amorphous silicon film that can suppress the formation of amorphous silicon.

29. Constitution of the Invention The present invention provides a method for producing an amorphous silicon film in which an amorphous silicon film is formed on a substrate by glow discharge decomposition by supplying a gas containing at least a silicon compound and a carrier gas. Under the conditions where the following is satisfied, the decomposition rate of the silicon compound in the glow discharge space is 20 to 90%, and the average residence time of the gas in the glow discharge space is 0.1 to 1.2 seconds. The present invention relates to a method for manufacturing an amorphous silicon film characterized by performing the glow discharge decomposition.

(1) Formula: % formula %] [where D is the deposition rate of the amorphous silicon film, η is the decomposition rate of the silicon compound, FA is the supply flow rate of the silicon compound, and F is the rate of the carrier gas. The supply flow rate, ■ is the volume of the glow discharge space, and l is the distance between the substrate and the glow discharge electrode. ] As a result of studying the deposition process of a-3i-based films by glow discharge decomposition, the present inventor found that the film deposition rate is proportional to the amount of diffusion and transport of active species generated by decomposition of silicon compounds to the substrate. .

That is, according to the knowledge obtained by the present inventors, the film deposition rate of a silicon-based film is determined by the decomposition f of a silicon compound per unit time.
It is proportional to the product of f1 (denoted as E) and the rate of arrival of active species to the substrate by diffusion transport (denoted as F). This point will be explained in detail. First, it is assumed that the above E and F are each expressed by the following formula [11], CITI)2.

E−η,・FA −−1−−−−−−・−(11)
F=FT−醊Ttonl−・−・−・−・[Ir[) Here, η is the decomposition rate of the silicon compound, F.

is the supply flow rate of silicon compound, D is the diffusion coefficient of active species,
τ is the average residence time of the active species in the glow discharge space, and is the distance between the substrate and the glow discharge electrode.

Furthermore, it is assumed that D and τ are expressed by the following equation (IV), [73].

D cc 1/P ・-・----(TV)
TocPv/ (Fs +FA)-----'-(V)
Here, ■ is the volume of the glow discharge space, and FB is the supply flow rate of the carrier gas.

If the film deposition rate is Dr, then the following equation 13 is obtained from the above equations CIT) to 73.

D,,Cl577A・FA-Jv/IJ'
T"；"薯? A-11-[I] Thereby, the design conditions and operating conditions of the glow discharge device, namely FA, Fi, V
, 1, etc., it is understood that the film deposition rate can be quantitatively determined by changing the values of each film forming parameter.

Further, as will be described later, the decomposition rate η of the silicon compound is also a value that can be quantitatively determined by each film forming parameter.

Therefore, according to the present invention, it is possible to form an a-3i film at a desired film formation speed, and it is possible to adjust and control the glow discharge device so that a high quality film can be manufactured at maximum speed. It becomes possible.

E. Example Next, an example in which the present invention is applied to a cylindrical electrode type plasma CVD apparatus will be described.

In the glow discharge decomposition device 3 shown in FIG.
When the radius of is r and the distance between the base 1 and the high-frequency electrode 9 is l, the following relationship holds between the discharge space volume 2 and 2,r.

VcK(6+r)2-R2=7! (l+2r)T The formula is obtained.

As shown in [■]2, cylindrical electrode type plasma C
The film deposition rate can also be controlled in a VD device. The results of this experiment are shown below.

Using the glow discharge device 3 shown in FIG. 1, the inside of the vacuum chamber 4 was evacuated by operating a vacuum pump (not shown) connected to the exhaust port 10. Next, the SiH4 gas is flowed from the cylinder 13 at IFs.
(corresponding to the above FA), supply dew H↑, and supply argon (Ar) gas from cylinder 14 at a flow rate of 200.
secm (standard c, c, per m
1nute) and introduced into a cylindrical electrode type plasma CVD apparatus. Further, the high frequency power supply R1 from the high frequency power source 8 is 400 W, and the distance 2 between the aluminum base 1 and the electrode 9 is 2. Qcm, 3.0 (J, 4.Qcm
The radius r of the base 1 was 5 cm, and the length of the electrode 9 was 55 cm. By adjusting the butterfly valve 11 provided between the exhaust port 10 and the vacuum pump, the pressure inside the vacuum chamber 4, that is, the reaction pressure P, is changed from 0.5 to 1.5 Torr, and a -3i film was formed. Using a quadruple seed mass spectrometer 55, the S i H4 decomposition rate η,
(corresponding to the above η41H) was measured, and the a-3t film deposition rate Dr (μm/hr) on the aluminum substrate 1 was measured using a Fisher scope. Note that no impurity gas was used in this experiment.

SiH<decomposition rate η□ is determined using a quadruple species mass spectrometer (MSQ-
Using a model 150A (manufactured by Japan Vacuum Technology Co., Ltd.), the amount of SiH4 was measured when the high frequency power source R10 was turned on and off, and was determined from the following formula.

-------(■) Here, 5IH2, Ar" are each m / e =
The peak value of the mass spectrum is 30.40. That is,
When a mass spectrum of 5iHn is measured, a peak appears at 5iHz, and this peak value is used to determine the amount of 5IH4 present in the discharge space.

The measurement results are as shown in FIGS. 2 and 3.

Figure 2 is 1/PI! For Dr7f, πf7 and ηS
This is a plot of the values of iH.

As is clear from Figure 2, each data is distributed on the same curve.
s r 11. , or Dr cc yy s=H
,・pfu holds true.

Here, F Si)+4 (i.e., FA in the above [43 formula)] and FAr (i.e., F!+ in the above [43 formula])
) is constant, so it can be said that the above-mentioned formula [43] has been confirmed by the experimental results. In other words, the film forming rate Dr in the process of forming the a-3i film is determined by the decomposition rate η1 of the silicon compound and the distance between the electrodes! , it became possible to quantitatively control the base radius r.

FIG. 3 shows that 1/P l =0.5 (Torr-am
) shows the measurement results under the conditions of -'. Here, the condition is set as η5ins=0.632, and this condition setting is FSi□Y=0.873Rf'・00
This can be achieved by maintaining the relationship.

In Figure 3, the FS is
x 114% Fs+o4 when increasing RrO value
It showed a correlation between Dr/, /Tco”TT7Ryo.

As can be seen from Figure 3, Dr/R] Dingwa 7QCF s
= H, /p bow i 11. +F Ar', or DrCCFs=,.

・Tanko] ■7cho24F 341ζ]] - π leap and barrier are established, therefore, the film forming rate Dr in the process of forming a-3i film depends on F SiH as expressed by the above [Equation 43] It can be said that it has been confirmed that it indicates gender.

From the above experimental results, it is understood that the deposition rate of the a-3i film due to glow discharge decomposition is proportional to the amount of diffusion and transport of active species to the substrate due to the decomposition of the silicon compound.

Incidentally, the process of forming an a-3i film by the groin discharge decomposition of 5iHa is thought to be as follows.

first, ! SiH, +e (high speed) -3iH, +e (low speed) -...
...--- [■] S i Ha is excited, and the excited S ll
-1a is 4S iH to +S i'+S 1) -1'+s iH
, +s i H3+5H2・−1−−−・−(X) SiH′ generated by decomposing as follows: (n=Q~3
) is thought to be deposited on the substrate surface to form an a-3i film.

However, e represents an electron, and * represents an excited state.

The degree of progress of this reaction, that is, the decomposition rate η of SiH4,
i0. . is influenced by the residence time τ (sec) of the raw material gas consisting of SiH and carrier gas in the planned discharge space (in the glow discharge space). That is, if the volume of the glow discharge space is V (cJ), then the following formula % Formula % Here, To and P o are the temperature and pressure in the standard state, respectively, and T and P hold true even if discharge is scheduled. .

Further, the volume (2) of the glow discharge space is a value that can be easily calculated based on the shape and dimensions of the space. That is, in the cylindrical electrode type glow discharge device of FIG. 1, the value of ■ is as follows.

V=2π14(f+r)” −rsu=2 πL ff (l+2 r) −−−−−(XH
) If the residence time τ of SiH4 in the scheduled discharge space is long, the decomposition rate η8.7 of S s Ha also becomes thick (becomes). That is, the following relationship approximately holds true between the two.

ηsiH+CC1e −” −−−−−−−(X m
) However, k is a constant.

As mentioned above, the decomposition rate η5 of SiH4. N.

can be variously changed by changing the values of P-β, r, R,, V, F AIF, and F SiH4. Therefore, all the parameters that determine the film-forming rate Dr shown in the above formula [43] can be controlled quantitatively, making it possible to manufacture the a-8i film at a desired film-forming speed.

In the present invention, in the process of forming an a-3i film,
Decomposition rate η of silicon compounds. It is important to limit the amount to between 20% and 90%. This range is 40% to 85%
It is more preferable to set it between. That is, since the film deposition rate Dr is proportional to the decomposition rate η as shown in equations [I] and [■], in the present invention, by limiting the decomposition rate η to the above range, the film deposition rate can be increased. Dr can be quantitatively set within a desired range, and an a-3i film having a uniform, predetermined quality can be produced with desired productivity and good reproducibility.

According to the relationship of Drcc η1, the larger η1 is, the larger the value of Dr is, and the better the productivity. However, η34. Especially 9
If it is too large, exceeding 0%, a microcrystalline phase will be included in the amorphous phase, and the homogeneity of the a-3i film will be impaired. When such a film is used in a photoreceptor, the charging ability is lowered.

Moreover, if η is too small, less than 20%, the film formation rate D
In addition to the decrease in r, in the a-3i:H film, S i H
Since more hydrogen undergoes z-bonding, photosensitivity decreases and the required exposure amount increases.

In the present invention, the film deposition rate 1)r can be controlled by controlling the value of η1, and therefore the above problem does not occur.

In addition, in the present invention, in the film forming process of the a-3i film, the average residence time τ of the raw material gas in the glow discharge space
It is important that the time is 0.1 to 1.2 seconds. It is more preferable that the value of τ be in the range of 0.25 to 1.0 seconds. That is, since the relationship of the above (XTI[] formula holds between τ and the decomposition rate η of silicon compounds), by setting the value of τ within the above range, the value of the decomposition rate η can be adjusted as described above. Therefore, it is possible to manufacture a-3i film having uniform and good quality with desired productivity and good reproducibility.Moreover, τ can be easily set within the above-mentioned formula [XI], (XI[
As shown in formula I), it can be quantitatively set to a desired value in advance. From the viewpoint of the performance of the photoreceptor, if τ is less than 0.1 seconds, η becomes too small and η becomes small, and as the Dr decreases, the photosensitivity deteriorates significantly. Moreover, when τ exceeds 1.2 seconds, η is too large and the charging potential is rather reduced.

FIG. 4 shows another plasma CVD apparatus 2 that can be used in the present invention.

The overall configuration is almost the same as the device shown in FIG. 1 (in FIG. 4, the same reference numerals as in FIG. 1 indicate the same functional members). The difference from the apparatus shown in FIG. 1 is that an exhaust chamber I2 having an enlarged inner diameter is provided at the bottom of the vacuum chamber 19. As a result, the internal volume of the vacuum chamber 1 on the exhaust side increases, and the silicon compound gas, carrier gas, etc. introduced into the vacuum chamber 19 are sucked out from the exhaust port 11.
More uniform and stable suction is possible when the pressure inside the tank is maintained at a predetermined value.

FIG. 5 shows a flat plate type glow discharge device that can be used in the present invention.

In a vacuum chamber 44 of this device 45, a flat substrate 40 is fixed on a substrate holder 41, and a heater 42 can heat the substrate 40 to a predetermined temperature. A high-frequency electrode 17 having gas outlet ports provided substantially uniformly over the entire surface is disposed facing the substrate 40, and a glow discharge is generated between the high-frequency electrode 17 and the substrate 40. In addition, 20.21.22.2 in the figure
3.27.28.29.36.38 are each valve, 31 is a supply source of 5il14 or gaseous silicon compound, 32 is a supply source of impurity gas (for example, B2H4, PIT3, etc.), and 33 is a carrier such as Ar or H2. It is a gas supply source.

In this glow discharge device, first, the surface of the support, e.g. /1 substrate 40, is cleaned and then placed in a vacuum chamber 44, and the valve 36 is adjusted so that the gas pressure in the vacuum chamber 44 is 10-6 Torr. and evacuate the substrate 40 to a predetermined temperature, particularly 100 to 350°C (preferably 150 to 350°C).
00°C). Next, using a high purity inert gas as a carrier gas, 51114 gas or Si
F4 gas and C as an impurity gas if necessary
High frequency voltage (e.g. 13.56
MHz) is applied. As a result, each of the above reaction gases is decomposed by glow discharge between the electrode 43 and the substrate 40, and a-3
i or impurity doped a-3i:H on the substrate 4o. Deposited film thickness is determined by Christeb (Taylor).
- Ilobson).

In this glow discharge device, assuming that the distance between the base 40 and the high-frequency electrode 43 is β, the following relationship holds between the discharge space volume V and l.

vcc/! −・−・〜−−−−(XIV)(XrV
) is substituted into the formula [I], the following formula [XV) is obtained.

D r 'C7) n ・F a/ff GoT] -Bottom----(XV) Also, in Fig. 5, when the glow discharge space is cut on a plane parallel to the substrate 40, the area of the cut surface is S
Then, the volume V of the discharge space is expressed as follows.

v=s-g-...----[XVI) This is expressed as (X
By substituting into equation I), it can be seen that in the parallel plate type glow discharge decomposition device, the average residence time τ of gas is expressed by the following equation.

TPo 1/60 (F, +FA) (FA is [X■
] Two FS r IIM and FIl correspond to F Ar. ) From this, it is understood that the average residence time τ of the gas can be controlled in the same manner as in the case of the concentric cylindrical glow discharge device described above.

Also, in flat plate type glow discharge devices, FA, FB
By changing the values of each film forming parameter such as , ■, β, etc., the film deposition rate can be determined quantitatively, and therefore the same effect as that already mentioned in the explanation of the cylindrical glow discharge device can be achieved. is understood.

It should be noted that the above formula [I] is considered to hold true even in devices having shapes other than the so-called concentric cylindrical type and parallel plate type.

The amorphous silicon thin film produced in the present invention is a-3i:Hla-8i:F.

a-3i:) I+F, boron doped P type a-3i:H
(B), phosphorus-doped n-type a-3i: Tl (P)
, a-3i:C, etc. can be exemplified.

In addition, examples of the silicon compound used in the present invention include S s Ha , S l zH S i F4 , S
All commonly used silicon sources can be used, such as 1HFs.

As the carrier gas, for example, argon, hydrogen, etc. can be used.

Furthermore, any of conductive materials, insulating materials, and semiconductor materials can be used as the substrate on which the a-3T film is formed.

The a-3i layer provided on the substrate must be a single layer (although there is no problem with the formation of another a-3i layer on the substrate via another a-3t layer).
A 3t-based film may be formed and a plurality of mutually different a-3t-based films may be laminated. For example, when an a-3iC:H film is provided on a substrate and an a-3t:H film is provided on it, or an a-3i:H film is provided on a substrate and an a-3iC:)I film is provided on it. This is a case where the

Next, an electrophotographic photoreceptor was manufactured using the a-3i film manufactured by the method of the present invention, and its characteristics were investigated.

On the other hand, Examples 1 to 7 and Comparative Examples 1.2 and 6.
Each electrophotographic photoreceptor (Examples 1 to 7, Comparative Example 1.2) having the configuration shown in the figure was manufactured.

First, a clean Aa support with a smooth surface was placed in a reaction (vacuum) chamber of a glow discharge device. Inside the reaction tank 10-
' Evacuate to a high vacuum level on a Torr stand and lower the support temperature to 20
After heating to 0°C, high purity Ar gas was introduced and the temperature was 0.5 T.
A high frequency power having a frequency of 13.65 M1lZ and a power density of 0.04 W/cnl was applied under a back pressure of 0.05 m, and a preliminary discharge was performed for 15 minutes. Then 5i11. and B 2
11.

A reaction gas consisting of A r was introduced and the flow rate ratio was adjusted (A r
+ S I H4+ B2H4) a that plays a charge blocking function by decomposing the mixed gas by glow discharge
-3i: HJI (B) 50, a-3i:11 layer (B) 51 responsible for charge ordering, potential holding and charge transport functions
A film was formed to a predetermined thickness at each deposition rate.

Thereafter, 3iH4 and CH4 were supplied and the flow rate ratio was adjusted (A r + Si H4 + Cl-1a), and the mixed gas was decomposed by glow discharge to form a-Si C of a predetermined thickness.
: ) 1 A surface modified layer 52 was further provided to complete the electrophotographic photoreceptor.

The structure of each layer is as follows.

Surface modified layer 52: C content - 60 atomic% (Si 〇=1
00 atomic %) Film thickness -0.3 μm Photoconductive layer 51: B doping amount was determined by glow discharge decomposition method. H4/F 5in4 = 0.5vol
・ppm (H) = 30 atomic% (S i + H = 100
atomic%) Film thickness - 19 μm Charge blocking layer 50: B doping amount is F 1 & 84 / F Si H4 = 1500 by glow discharge method
vol.ppm (H) = 30 atomic % (S i + H = 100 atomic %) Film thickness = 1 μm In addition, the film forming parameters of the photoconductive layer of the photoreceptor of Examples 1 to 7 and Comparative Example 1.2 are as follows: It was set as follows.

Reaction pressure crab P = 1. OTorr Electrode length: L = 55.0cm Drum-shaped substrate temperature: Ts = 250℃ diborane flow rate/
Silane flow rate: F e, H, / F s = n, = 0.5 vol-pp
m High frequency supply voltage: Rt = 400 W In forming the photoconductive layer, the above film forming parameters were kept constant, silane flow rate FS i 11+, argon flow ftp'
By changing A-, the average residence time τ of the raw material gas (S i H4+ 82111.+A r) in the glow discharge space is varied, and the silane decomposition rate η is varied accordingly.
5. I changed H*. Then, the values of τ and ηS r 114 were measured, and the film deposition rate Dr was also measured.

Furthermore, for the photoconductors of each example and comparative example, the charging potential ■
. and sensitivity E 60. : was measured. The results of each measurement are shown in FIG.

τ was measured according to the above-mentioned CX0 formula.

The film deposition rate Dr was measured using a Fische scope.
(manufactured by Company R), and the silane decomposition rate η9. l. Quality! It was measured by the method described above using an analyzer.

For the photoreceptor characteristics test, each electrophotographic photoreceptor prepared as described above was installed in a modified U-Bix 1600 machine, and measured in the following manner under an environment of a temperature of 20°C and a relative humidity of 60%. .

Charging potential: Vo (V) Current flowing into the photoreceptor = surface potential of the photoreceptor when charged with a constant current of 150 μA.

Sensitivity: E": (fax-sec) Exposure amount required to attenuate the photoreceptor surface potential of 600 V to 50 V.

Light emitted from a halogen lamp with a color temperature of 3000 K was used for exposure, with long wavelength light components of 630 mm or more being sharply cut using a dichroic ink mirror.

Also, the silane decomposition rate η with respect to the change in average residence time, 8
) The changes in l+ are shown in Figure 8.

Furthermore, changes in photoreceptor characteristics with respect to changes in average residence time τ and silane decomposition rate ηSil+4 are shown in FIGS. 9 and 1, respectively.
It is shown in Figure 0.

As is clear from Figures 7 to 10, the silane decomposition rate was
By setting the average residence time τ in the range of 0 to 90% (more preferably 40 to 85%) and the average residence time τ in the range of 0.1 to 1.2 seconds (more preferably 0.25 to 1.0 seconds). , it is possible to increase the film deposition rate, obtain a high quality a-5i film, and manufacture a photoreceptor having good charging potential characteristics and sensitivity characteristics.

8. Effects of the Invention In the present invention, glow discharge decomposition is performed under conditions where the above formula [I] is satisfied, so a film having desired characteristics can be produced as desired while controlling the film forming conditions appropriately. It can be manufactured at film speeds, and the conversion efficiency from raw materials to thin films can be increased to suppress the generation of powder.

Since glow discharge decomposition is carried out within the range of 0.1 to 1.2 seconds, a high quality film can be formed at high speed while controlling the film forming conditions appropriately and quantitatively.

[Brief explanation of drawings]

The drawings show an embodiment of the present invention, and FIG. 1 is a schematic cross-sectional view of a glow discharge device, and FIGS. 2 and 3 are graphs showing the mutual relationship between each film forming parameter and film deposition rate. , Figures 4 and 5 are schematic cross-sectional views of other glow discharge devices, Figure 6 is a partial cross-sectional view showing an example of an electrophotographic photoreceptor, and Figure 7 is a diagram showing changes in characteristics of each electrophotographic photoreceptor. Fig. 8 is a graph showing the relationship between average residence time and silane decomposition rate, Fig. 9 is a graph showing changes in electrophotographic characteristics with respect to changes in average residence time, and Fig. 10 is a graph showing silane decomposition rate. 3 is a graph showing changes in electrophotographic characteristics with respect to changes in ratio. In addition, in the reference numerals shown in the drawings, 1--------... Cylindrical substrate 2.3.45---- Glow discharge device 4.19.44-- −・−−−−−1 vacuum chamber 5−−−
−−−−−−−−−・Gas outlet lower, 42−・−・−
・-------Heater 9.43- ・----m-Electrode 8-------- High frequency power supply 13.14.15-----Gas supply source 17
．． 20.21.22.27.28.29.36---~
-・---------Valve 40------------Flat substrate 55----
-------It is a mass spectrometer. Agent Patent Attorney Aisaka Youngest brother Figure 1 Figure 5

Claims (1)

[Scope of Claims] 1. A method for producing an amorphous silicon film in which an amorphous silicon film is formed on a substrate by glow discharge decomposition by supplying a gas containing at least a silicon compound and a carrier gas, wherein the following formula [I] is Under the satisfied conditions, the decomposition rate of the silicon compound in the glow discharge space is 20 to 90%, and the average residence time of the gas in the glow discharge space is 0.1 to 1.2 seconds. A method for producing an amorphous silicon film, characterized in that the glow discharge decomposition is performed as described above. [I] Formula: Dr■η_A・F_A・√(V)/l√(F_B+F_
A) [where, Dr is the deposition rate of the amorphous silicon film, η_A is the decomposition rate of the silicon compound, F_
A is the supply flow rate of the silicon compound, F_B is the supply flow rate of the carrier gas, V is the volume of the glow discharge space, and l is the distance between the base body and the glow discharge electrode. ]