JPS63222468A - Substrate for amorphous silicon solar cell - Google Patents
Substrate for amorphous silicon solar cellInfo
- Publication number
- JPS63222468A JPS63222468A JP62056198A JP5619887A JPS63222468A JP S63222468 A JPS63222468 A JP S63222468A JP 62056198 A JP62056198 A JP 62056198A JP 5619887 A JP5619887 A JP 5619887A JP S63222468 A JPS63222468 A JP S63222468A
- Authority
- JP
- Japan
- Prior art keywords
- film
- solar cell
- oxide film
- substrate
- anodic oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 29
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 15
- 239000000919 ceramic Substances 0.000 claims abstract description 24
- 239000010407 anodic oxide Substances 0.000 claims description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 238000009413 insulation Methods 0.000 abstract description 4
- 238000010292 electrical insulation Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000009719 polyimide resin Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229920006015 heat resistant resin Polymers 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明はアモルファスシリコン太陽電池用基板に関し
、さらに詳しくいえば高電圧を取出すのに好適な直列接
続型アモルファスシリコン太陽電池に用いられる基板に
関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a substrate for an amorphous silicon solar cell, and more particularly to a substrate used in a series-connected amorphous silicon solar cell suitable for extracting high voltage.
この明細書において、「アルミニウム」という語には、
純アルミニウムはもちろんのことすべてのアルミニウム
合金を含むものとする。また、この明細書においては、
「アモルファスシリコン」を以下ｒａ−ＳｉＪと称する
ものとする。In this specification, the term "aluminum" refers to
This includes not only pure aluminum but also all aluminum alloys. In addition, in this specification,
"Amorphous silicon" is hereinafter referred to as ra-SiJ.
従来技術とその問題点
１枚の基板上に複数個の太陽電池を形成し、これらを直
列に接続した直列接続型ａ−Ｓｉ太陽電池としては、た
とえば基板上に、クロム等からなる下部電極を電子ビー
ム蒸着法等により複数形成し、各下部電極上にａ−３Ｌ
層をたとえばＣＶＤ法により形成し、各ａ−Ｓｉ層を透
明導電膜で被覆し、各電池を直列に接続したものがある
。このような太陽電池においては、当然のことながら下
部電極間が電気的に絶縁されていなければならず、下部
電極間の抵抗値を２０ＭΩ以上とすることが必要となっ
てくる。Prior art and its problems A series-connected a-Si solar cell in which a plurality of solar cells are formed on one substrate and connected in series is made by, for example, forming a lower electrode made of chromium or the like on the substrate. A-3L is formed on each lower electrode by electron beam evaporation, etc.
There is one in which the layers are formed by, for example, a CVD method, each a-Si layer is covered with a transparent conductive film, and each battery is connected in series. In such a solar cell, it is a matter of course that the lower electrodes must be electrically insulated, and the resistance value between the lower electrodes must be 20 MΩ or more.
従来、ａ−Ｓｉ太陽電池用基板としては、ガラス製のも
の、ポリイミド樹脂等の高耐熱性樹脂製のものおよびス
テンレス鋼板の表面に電気絶縁層としてポリイミド樹脂
等の高耐熱性樹脂からなる皮膜が形成されたもの、など
が用いられていた。しかしながら、上記第１番目のもの
では、放熱性が悪く、重く、フレキシビリティがなく、
しかも破損しやすいという問題があった。また、上記第
２番目のものでは、樹脂が非常に高価であるので、太陽
電池のコスト・ダウンを図ることがむずかしく、柔かす
ぎてこしがなく、しかもａ−３ｉ影形成にガスが発生す
るという問題があった。さらに、上記第３番目のもので
は、ステンレス鋼板およびポリイミド樹脂が非常に高価
であるので、太陽電池のコスト・ダウンを図ることはむ
ずかしいという問題があった。Conventionally, substrates for a-Si solar cells have been made of glass, those made of highly heat-resistant resin such as polyimide resin, and stainless steel plates with a film made of highly heat-resistant resin such as polyimide resin as an electrical insulating layer on the surface. Those that were formed were used. However, the first method has poor heat dissipation, is heavy, and lacks flexibility.
Moreover, there was a problem that it was easily damaged. In addition, in the second case, the resin is very expensive, so it is difficult to reduce the cost of solar cells, and it is too soft and stiff, and gas is generated during a-3i shadow formation. There was a problem. Furthermore, in the third method, the stainless steel plate and polyimide resin are very expensive, so it is difficult to reduce the cost of the solar cell.
そこで、上記の問題を解決したａ−３Ｌ太陽電池用基板
として、アルミニウム板の表面に陽極酸化皮膜が形成さ
れ、陽極酸化皮膜の表面に５ｉ０２またはＡｌ２Ｏ３か
らなる膜厚１００〜５００人のスパッタ膜が形成された
ものが提案された（特開昭６０−１９８７８２号公報参
照）。ところが、この基板では、次のような問題がある
。すなわち、膜厚１００〜５００人のスパッタ膜はポー
ラス状でかつ表面に微細な凹凸が多数存在したものとな
る。したがってその上に太陽電池を形成した場合、太陽
電池とアルミニウム板との間の電気絶縁性が十分ではな
くなり、その結果各太陽電池間の電気絶縁性が十分では
なくなる。Therefore, as a substrate for a-3L solar cells that solves the above problems, an anodic oxide film is formed on the surface of an aluminum plate, and a sputtered film of 5i02 or Al2O3 with a thickness of 100 to 500 is formed on the surface of the anodic oxide film. A structure having the following structure was proposed (see Japanese Unexamined Patent Publication No. 198782/1982). However, this board has the following problems. In other words, a sputtered film with a thickness of 100 to 500 mm is porous and has many fine irregularities on its surface. Therefore, when solar cells are formed thereon, the electrical insulation between the solar cells and the aluminum plate is no longer sufficient, and as a result, the electrical insulation between each solar cell is no longer sufficient.
この発明の目的は、上記問題を一挙に解決したａ−Ｓｉ
太陽電池用基板を提供することにある。The purpose of this invention is to solve the above problems all at once.
An object of the present invention is to provide a substrate for solar cells.
問題点を解決するための手段
この発明によるａ−Ｓｉ太陽電池用基板は、アルミニウ
ム板の少なくとも片面に膜厚１〜１０Ｊ１１１の未封孔
陽極酸化皮膜が形成され、未封孔陽極酸化皮膜の表面に
膜厚１〜１０Ｊｙ！のセラミックス皮膜が形成されたも
のである。Means for Solving the Problems In the a-Si solar cell substrate according to the present invention, an unsealed anodic oxide film with a thickness of 1 to 10J111 is formed on at least one side of an aluminum plate, and the surface of the unsealed anodic oxide film is The film thickness is 1 to 10 Jy! A ceramic film is formed.
上記において、未封孔陽極酸化皮膜およびセラミックス
皮膜の２つの皮膜により、アルミニウム板と、形成され
る太陽電池との間の極めて優れた電気絶縁性が保証され
る。すなわち、未封孔陽極酸化皮膜およびセラミックス
皮膜は、それぞれ電気絶縁性を有するが、いずれもポー
ラス状であるために、それぞれ単独では極めて優れた電
気絶縁性は得られない。両者が重なり合って存在するこ
とにより極めて優れた電気絶縁性が得られる。In the above, the two films, the unsealed anodic oxide film and the ceramic film, ensure excellent electrical insulation between the aluminum plate and the solar cell to be formed. That is, although the unsealed anodic oxide film and the ceramic film each have electrical insulation properties, since both are porous, extremely excellent electrical insulation properties cannot be obtained by using each film alone. Extremely excellent electrical insulation can be obtained by the overlapping presence of both.
陽極酸化皮膜としては、硫酸陽極酸化皮膜、しゅう酸陽
極酸化皮膜、クロム酸陽極酸化皮膜等各種のものを使用
することができる。また、陽極酸化皮膜を未封孔として
おくのは、未封孔陽極酸化皮膜が次の２つの特性を有す
ることが判明したからである。その１は高温にさらされ
ても皮膜にクラックが発生しにくいことである。As the anodic oxide film, various types can be used, such as a sulfuric acid anodic oxide film, an oxalic acid anodic oxide film, and a chromic acid anodic oxide film. Furthermore, the reason why the anodic oxide film is left unsealed is that it has been found that the unsealed anodic oxide film has the following two characteristics. The first is that the film is less likely to crack even when exposed to high temperatures.
このことにより、下部電極やａ−５ｉ層を形成するさい
に基板の温度が２５０〜３５０℃まで上昇したとしても
陽極酸化皮膜にクラックが発生されるのが防止され、ク
ラックの存在による皮膜の電気絶縁性の低下が防止され
る。その２は、皮膜表面が微細な針状構造となっていな
いことである。陽極酸化皮膜の表面が針状構造となって
いると、その上に形成されるセラミックス皮膜の表面に
も微細な凹凸が存在することになり太陽電池の特性が出
ないおそれがある。通常、陽極酸化皮膜には、これを形
成するための陽極酸化処理後封孔処理を施すのが一般的
であるが、封孔状態の陽極酸化皮膜では、下部電極やａ
−３ｉ層の形成時にクラックが発生し、電気絶縁性が低
下するおそれがある。また、封孔状態の陽極酸化皮膜の
表面は、微細な針状構造となっているので、この表面に
セラミックス皮膜を形成し、さらにａ−ＳＬ太陽電池を
形成した場合、太陽電池の特性が出ないおそれがある。This prevents cracks from occurring in the anodic oxide film even if the temperature of the substrate rises to 250 to 350°C when forming the lower electrode and the a-5i layer. Deterioration of insulation properties is prevented. Second, the surface of the film does not have a fine needle-like structure. If the surface of the anodic oxide film has a needle-like structure, the ceramic film formed thereon will also have fine irregularities on its surface, which may result in the failure of solar cell characteristics. Normally, the anodic oxide film is subjected to a sealing treatment after the anodizing treatment to form it.
There is a risk that cracks may occur during the formation of the -3i layer, resulting in a decrease in electrical insulation. In addition, the surface of the sealed anodic oxide film has a fine needle-like structure, so if a ceramic film is formed on this surface and an a-SL solar cell is further formed, the characteristics of the solar cell will be improved. There is a possibility that it is not.
陽極酸化皮膜の膜厚を１〜１０／Ｊとしたのは、ＩＩｇ
／１未満であるとセラミックス皮膜形成のさいの取扱い
上のきず等によって絶縁破壊を起こすおそれがあり、１
０Ｊｍを越えるとａ−Ｓｔ層をＣＶＤ法により形成する
さいの基板温度の上昇により陽極酸化皮膜にクラックが
発生し、絶縁破壊を起こす可能性が大きくなるばかりで
あり、絶縁性の向上にはあまり寄与しないからである。The thickness of the anodic oxide film was set to 1 to 10/J because of IIg.
If it is less than 1, there is a risk of dielectric breakdown due to handling flaws during ceramic film formation.
If it exceeds 0 Jm, cracks will occur in the anodic oxide film due to the rise in substrate temperature when forming the a-St layer by the CVD method, and the possibility of causing dielectric breakdown will increase, and the insulation will not be improved much. This is because it does not contribute.
また、未封孔陽極酸化皮膜は、アルミニウム板およびセ
ラミックス皮膜のいずれとも密着性が優れており、セラ
ミックス皮膜の剥離を確実に防止しつる。Furthermore, the unsealed anodic oxide film has excellent adhesion to both the aluminum plate and the ceramic film, and reliably prevents the ceramic film from peeling off.
セラミックス皮膜としては、ＳｉＯ，ＳｉＯ２，５ｉＣ
ｓＳｔ３Ｎ４等の酸化物、炭化物、窒化物等からなるも
のが用いられる。セラミックス皮膜を形成する方法とし
ては、ＰＶＤ法（物理的気相メッキ法）や、ＣＶＤ法（
化学的気相メッキ法）や、分散質であるセラミックス粒
子がイソプロピルアルコール等の分散媒中に均一に分散
した分散液をはけ塗り、吹付け、ディッピング等により
塗布し、その後乾燥させる方法などがある。セラミック
ス皮膜の膜厚を１〜１０／ｆｆとしたのは、ＩＪＵＩ未
満であると、未封孔陽極酸化皮膜の表面にセラミックス
皮膜を形成することによる電気絶縁性向上の効果が得ら
れず、ＩＣＩを越えても電気絶縁性向上の効果は変ｉら
ず、かえってコストが高くなるからである。また、セラ
ミックス皮膜は、下部電極やａ−ＳＬ層形成のさいに基
板が加熱されたとしても、ガスの発生量は少ない。As the ceramic film, SiO, SiO2, 5iC
A material made of oxide, carbide, nitride, etc. such as sSt3N4 is used. Methods for forming ceramic films include PVD method (physical vapor phase plating method) and CVD method (
(chemical vapor phase plating method) or a method in which a dispersion liquid in which ceramic particles as a dispersoid are uniformly dispersed in a dispersion medium such as isopropyl alcohol is applied by brushing, spraying, dipping, etc., and then dried. be. The reason why the thickness of the ceramic film is set to 1 to 10/ff is that if it is less than IJUI, the effect of improving electrical insulation by forming a ceramic film on the surface of the unsealed anodic oxide film cannot be obtained, and ICI This is because even if it exceeds 1, the effect of improving electrical insulation will not change, but the cost will increase. Further, the ceramic film generates a small amount of gas even if the substrate is heated during formation of the lower electrode and the a-SL layer.
なお、アルミニウム板における陽極酸化皮膜を形成すべ
き面の表面粗さは、Ｒ’ｍａｘ、 ０ 、 ５１Ｕ１１
以下としておくことが好ましい。Note that the surface roughness of the surface of the aluminum plate on which the anodic oxide film is to be formed is R'max, 0, 51U11
It is preferable to keep the following.
実 施 例 以下、この発明の実施例を図面を参照して説明する。Example Embodiments of the present invention will be described below with reference to the drawings.
第１図には、ａ−Ｓｉ太陽電池用基板が示されている。FIG. 1 shows an a-Si solar cell substrate.
ａ−Ｓｉ太陽電池用基板（１）は、アルミニウム板（２
）の片面に膜厚１〜１０切の未封孔陽極酸化皮膜（３）
が形成され、皮膜（３〉の表面に膜厚１〜１０贋のセラ
ミックス皮膜（４）が形成されたものである。The a-Si solar cell substrate (1) is an aluminum plate (2
) unsealed anodic oxide film with a film thickness of 1 to 10 mm on one side (3)
is formed, and a ceramic film (4) with a thickness of 1 to 10 mm is formed on the surface of the film (3).
第２図には、基板（１）を使用した直列接続型ａ−Ｓｉ
太陽電池が示されている。直列接続型ａ−３Ｌ太陽電池
は、セラミックス皮膜′（４）上に複数のクロム下部電
極（１１）が形成され、下部電極（１１）上がａ−３ｔ
層（１２）で覆われ、ａ−Ｓｉ層（１２）上に透明導電
膜からなる上部電極（１３）が形成されたものであり、
上部電極（１３）と隣りの電池の下部電極（１１）とが
電気的に接続されることによりすべての電池が直列に接
続されている。Figure 2 shows a series-connected a-Si using the substrate (1).
A solar cell is shown. The series connection type a-3L solar cell has a plurality of chromium lower electrodes (11) formed on the ceramic film' (4), and the a-3T on the lower electrode (11).
It is covered with a layer (12), and an upper electrode (13) made of a transparent conductive film is formed on the a-Si layer (12),
All the batteries are connected in series by electrically connecting the upper electrode (13) and the lower electrode (11) of the adjacent battery.
次に、この発明による太陽電池用基板の性能を調べるた
めに行なった試験について、比較品について行なった試
験とともに説明する。Next, tests conducted to examine the performance of the solar cell substrate according to the present invention will be described together with tests conducted on comparative products.
Ｊ Ｉ ５Ａ１０５０からなる縦×横×厚さが１００ｍ
＋＊Ｘ １００ｍｍＸ ０． ３ｍｒａであるアルミニ
ウム板（１）を用意した。このアルミニウム板（１）の
表面粗さはＲｍａｘ、 ０ 、 ５１ｍ以下としておい
た。J I 5A1050 length x width x thickness 100m
+*X 100mmX 0. An aluminum plate (1) of 3 mra was prepared. The surface roughness of this aluminum plate (1) was set to Rmax, 0, 51 m or less.
そして、このアルミニウム板（１）に、１５ｗｔ％Ｈ２
ＳＯ４水溶液からなる液温２０±１℃の電解液中で、電
流密度１．３Ａ／ｄｍ２で直流電解により所定時間陽極
酸化処理を施して膜厚５切の硫酸陽極酸化皮膜（３）を
形成した。硫酸陽極酸化皮膜（３）には封孔処理を施さ
ず、未封孔状態のままでこの皮膜（３）の表面に、ＰＶ
Ｄ法により膜厚５ｐのＳ ｉ ０２皮膜（４）を形成す
ることによって、この発明の太陽電池用基板（１）（発
明品）を製造した。Then, on this aluminum plate (1), 15 wt% H2
A sulfuric acid anodic oxide film (3) with a thickness of 5 mm was formed by performing anodization treatment for a predetermined period of time by direct current electrolysis at a current density of 1.3 A/dm2 in an electrolytic solution consisting of an SO4 aqueous solution with a liquid temperature of 20 ± 1 ° C. . The sulfuric acid anodized film (3) was not subjected to sealing treatment, and PV was applied to the surface of this film (3) in an unsealed state.
A solar cell substrate (1) (invention product) of the present invention was manufactured by forming a Si 02 film (4) with a film thickness of 5p by method D.
また比較品として、５ｉ０２皮膜の膜厚が０゜５ｐであ
ること以外は上記発明品と同様な基板を製造した。As a comparative product, a substrate similar to the above invention product was manufactured except that the thickness of the 5i02 film was 0°5p.
その後、電子ビーム蒸着法により、発明品の基板（１）
および比較品の基板の５ｉ０２皮膜上に、それぞれクロ
ムからなる１辺１５ｍ＋ｓの正方形状下部電極を２４個
形成した。そして、各下部電極とアルミニウム板との間
の抵抗を測定し、電気絶縁性を調べた。その結果、本発
明品の基板では、２４個の下部電極すべてにおいて上記
抵抗が２０ＭΩ以上であった。これに対して、比較品の
基板では、２４個中１９個の下部電極において上記抵抗
が２０ＭΩ未満であった。After that, the substrate of the invention (1) was formed by electron beam evaporation method.
And on the 5i02 film of the comparative substrate, 24 square lower electrodes each made of chromium and having a side of 15 m+s were formed. Then, the resistance between each lower electrode and the aluminum plate was measured to examine electrical insulation. As a result, in the substrate of the present invention, the resistance was 20 MΩ or more in all 24 lower electrodes. On the other hand, in the comparative substrate, 19 out of 24 lower electrodes had the above-mentioned resistance of less than 20 MΩ.
発明の効果
この発明によるａ−Ｓｉ太陽電池用基板は、アルミニウ
ム板の少なくとも片面に膜厚１〜１０ｐの未封孔陽極酸
化皮膜が形成され、未封孔陽極酸化皮膜の表面に膜厚１
〜１０μｍのセラミックス皮膜が形成されたものである
から、従来のステンレス鋼板の表面にポリイミド樹脂等
の高耐熱性樹脂皮膜を形成したものに比べて安価である
とともに軽量となり、しかもａ−３ｉ形成時のガス発生
量が少なくなる。また、従来のガラス製のものに比べて
軽量であるとともに放熱性に優れ、しかも取扱いのさい
にも破損のおそれがない。また、従来のポリイミド樹脂
等の高耐熱性樹脂製のものに比べて、安価であるととも
にａ−ＳＬ影形成時ガス発生量が少なく、しかも適当な
剛性を有している。さらに、従来のアルミニウム板の表
面に陽極酸化皮膜が形成され、この皮膜の表面にＡ／２
０３またはＳｉＯ２からなる膜厚１００〜５００人のセ
ラミックス皮膜が形成されたものに比べて、アルミニウ
ム板と、セラミックス皮膜上に形成されるａ−３Ｌ電池
の下部電極との間の電気絶縁性が優れている。Effects of the Invention In the a-Si solar cell substrate according to the present invention, an unsealed anodic oxide film having a thickness of 1 to 10 p is formed on at least one side of an aluminum plate, and a film thickness of 1 to 10 p is formed on the surface of the unsealed anodic oxide film.
Since it has a ~10 μm ceramic film formed on it, it is cheaper and lighter than conventional stainless steel sheets with a highly heat-resistant resin film such as polyimide resin formed on the surface. The amount of gas generated is reduced. In addition, it is lighter than conventional glass products, has excellent heat dissipation properties, and has no risk of breakage when handled. Furthermore, compared to conventional materials made of highly heat-resistant resins such as polyimide resins, they are less expensive, generate less gas during a-SL shadow formation, and have appropriate rigidity. Furthermore, an anodic oxide film is formed on the surface of the conventional aluminum plate, and the surface of this film is A/2
The electrical insulation between the aluminum plate and the lower electrode of the A-3L battery formed on the ceramic film is superior to that of a ceramic film made of 03 or SiO2 with a thickness of 100 to 500 people. ing.
第１図はこの発明によるａ−８Ｌ太陽電池用基板の垂直
断面図、第２図はこの発明による基板を用いた直列接続
型ａ−ＳＬ太陽電池の垂直断面図である。
（１）・・・ａ−３ｉ太陽電池用基板、（２）・・・ア
ルミニウム板、（３）・・・未封孔陽極酸化皮膜、（４
）・・・セラミックス皮膜。
以 上FIG. 1 is a vertical cross-sectional view of a substrate for an a-8L solar cell according to the present invention, and FIG. 2 is a vertical cross-sectional view of a series-connected type a-SL solar cell using the substrate according to the present invention. (1)...a-3i solar cell substrate, (2)...aluminum plate, (3)...unsealed anodic oxide film, (4
)... Ceramic film. that's all
Claims (1)
未封孔陽極酸化皮膜が形成され、未封孔陽極酸化皮膜の
表面に膜厚１〜１０μｍのセラミックス皮膜が形成され
たアモルファスシリコン太陽電池用基板。An amorphous silicon solar cell substrate comprising: an unsealed anodic oxide film having a thickness of 1 to 10 μm formed on at least one side of an aluminum plate; and a ceramic film having a thickness of 1 to 10 μm formed on the surface of the unsealed anodic oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62056198A JPS63222468A (en) | 1987-03-11 | 1987-03-11 | Substrate for amorphous silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62056198A JPS63222468A (en) | 1987-03-11 | 1987-03-11 | Substrate for amorphous silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63222468A true JPS63222468A (en) | 1988-09-16 |
Family
ID=13020421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62056198A Pending JPS63222468A (en) | 1987-03-11 | 1987-03-11 | Substrate for amorphous silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63222468A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4971633A (en) * | 1989-09-26 | 1990-11-20 | The United States Of America As Represented By The Department Of Energy | Photovoltaic cell assembly |
| JP2007208007A (en) * | 2006-02-02 | 2007-08-16 | Tama Tlo Kk | Solar cell module with integrated cooling mechanism, and light/heat hybrid energy convertor |
| JP2010212336A (en) * | 2009-03-09 | 2010-09-24 | Fujifilm Corp | Photoelectric converting element and method of manufacturing the same, and solar cell |
| JP2011233874A (en) * | 2010-04-07 | 2011-11-17 | Fujifilm Corp | Metal substrate with isolation layer and photoelectric conversion element |
| JPWO2016047702A1 (en) * | 2014-09-24 | 2017-04-27 | 京セラ株式会社 | Electronic component mounting substrate and light emitting device using the same |
-
1987
- 1987-03-11 JP JP62056198A patent/JPS63222468A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4971633A (en) * | 1989-09-26 | 1990-11-20 | The United States Of America As Represented By The Department Of Energy | Photovoltaic cell assembly |
| JP2007208007A (en) * | 2006-02-02 | 2007-08-16 | Tama Tlo Kk | Solar cell module with integrated cooling mechanism, and light/heat hybrid energy convertor |
| JP2010212336A (en) * | 2009-03-09 | 2010-09-24 | Fujifilm Corp | Photoelectric converting element and method of manufacturing the same, and solar cell |
| JP2011233874A (en) * | 2010-04-07 | 2011-11-17 | Fujifilm Corp | Metal substrate with isolation layer and photoelectric conversion element |
| JPWO2016047702A1 (en) * | 2014-09-24 | 2017-04-27 | 京セラ株式会社 | Electronic component mounting substrate and light emitting device using the same |
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