JPS61284971A - Substrate for thin film solar battery - Google Patents
Substrate for thin film solar batteryInfo
- Publication number
- JPS61284971A JPS61284971A JP60126514A JP12651485A JPS61284971A JP S61284971 A JPS61284971 A JP S61284971A JP 60126514 A JP60126514 A JP 60126514A JP 12651485 A JP12651485 A JP 12651485A JP S61284971 A JPS61284971 A JP S61284971A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- pore
- anodic oxidation
- heat resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 20
- 239000010409 thin film Substances 0.000 title claims description 6
- 238000007789 sealing Methods 0.000 claims abstract description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000007743 anodising Methods 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 31
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 abstract description 9
- 239000011148 porous material Substances 0.000 abstract description 9
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 3
- 235000006408 oxalic acid Nutrition 0.000 abstract description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052804 chromium Inorganic materials 0.000 abstract description 2
- 239000011651 chromium Substances 0.000 abstract description 2
- 239000010935 stainless steel Substances 0.000 abstract description 2
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 27
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000012085 test solution Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910001593 boehmite Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、アルミニウムまたはアルミニウム合金板の少
なくとも一方の表面を陽極酸化法による酸化アルミニウ
ムで覆って絶縁化し友集積型薄膜太陽電池用基板に関す
るものである０
従来の技術
アルミニウムの陽極酸化皮膜は表面に無数のポアーヲ有
している。しかし、このままの開孔状態の皮膜では耐蝕
性が劣っているため、生成した皮膜を加圧水蒸気、沸騰
水等により水和処理し、下記反応によりベーマイトまた
はパイヤライトを生成し、それらの体積膨張によりボア
ーをふさぎ、耐蝕性を向上させている。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a substrate for an integrated type thin film solar cell in which at least one surface of an aluminum or aluminum alloy plate is covered with aluminum oxide formed by an anodizing method to insulate it. 0 Prior Art The anodic oxide film of aluminum has countless pores on its surface. However, since the film in its open state has poor corrosion resistance, the formed film is hydrated with pressurized steam, boiling water, etc., and the following reaction produces boehmite or pierite, and the volumetric expansion of the film creates pores. This improves corrosion resistance.
十Ｈ２０
発明が解決しようとする問題点
これらの陽極酸化アルミナは耐熱性にすぐれているため
、アモルファスシリコン（以下！Ｌ−Ｓｉト記す）太陽
電池基板としての使用が可能である（特願昭５９−７１
９７９号）。そしてこれらの陽極酸化アルミナは通常、
封孔度７０％以上に処理されている。しかし、封孔処理
を施したム１／陽極酸化アルミナ１（ａ−８ｉ太陽雷池
用基板として用いた場合、厚さが７μｍよシ厚い湯極酸
化アルミナ皮膜では、２００℃以下の温度でクラックを
生じ、また厚さが７μｍ以下の薄い陽極酸化アルミナ皮
膜では耐熱性が向上するものの２６０℃以上になるとク
ラックを発生していた。10H20 Problems to be Solved by the Invention Since these anodized aluminas have excellent heat resistance, they can be used as amorphous silicon (hereinafter referred to as L-Si) solar cell substrates (Patent Application No. 1983). -71
No. 979). And these anodized aluminas are usually
Treated with a sealing degree of 70% or more. However, when used as a substrate for a solar lightning pond (Mu1/anodized alumina 1 (a-8i) that has undergone sealing treatment, a hot water anodized alumina film with a thickness of about 7 μm will not crack at temperatures below 200°C. In addition, although the heat resistance of a thin anodized alumina film with a thickness of 7 μm or less is improved, cracks occur when the temperature exceeds 260°C.
このように陽極酸化アルミナ皮膜を封孔処理したム１／
陽極酸化アルｉす皮膜の耐熱温度は２５０〜３００℃で
あるが、さらに高温側でｈ−８ｉを堆積し、ＳｉＨ２結
合の少ない良質な膜を形成したり、低抵抗、高光透過性
の透明導電膜を形成するために陽極酸化アルミナの耐熱
性をさらに向上させなけルばならないという問題があっ
た。In this way, the anodized alumina film was sealed.
The heat resistance temperature of the anodized aluminum film is 250 to 300°C, but H-8i is deposited on the higher temperature side to form a high-quality film with few SiH2 bonds, and to create a transparent conductive film with low resistance and high light transmittance. There was a problem in that in order to form a film, the heat resistance of anodized alumina had to be further improved.
本発明はこのような問題点を解決するもので、ａ−８ｌ
太陽電池用のム１／陽極酸化アルミナ皮膜からなる基板
の耐熱性を向上させることを目的とするものである。The present invention solves these problems, and a-8l
The purpose of this invention is to improve the heat resistance of a substrate made of Mu1/anodized alumina film for solar cells.
問題点を解決するための手段
この問題点を解決するために、本発明者らは陽極酸化ア
ルミナの厚さならびにその封孔度と耐熱性との関係に着
目し、検討企行なった。Means for Solving the Problem In order to solve this problem, the present inventors focused on the thickness of anodized alumina and the relationship between its degree of sealing and heat resistance, and conducted studies.
なお、封孔度の評価は、次に示す酸性亜硫酸水溶液法で
行なった。すなわち、無水亜硫酸水溶液（１ｏｇ／ｉ？
）に酢酸水溶液（２０〜４０ｍｇ／Ｊ）を加えてｐＨ３
，６〜３゜８とし、さらに硫酸（６Ｎ）によってｐＨ２
・６とした試験液を用意する。試験片（面積５ａＩ１１
）は５０’／ＴｌＩＤ硝酸（１８〜２２℃）中に１０分
間浸漬した後、水洗乾燥後重量（Ａ（ｇ））ｅ測定する
。９０〜９２℃に加熱した上記の試験液に試験片を２０
分浸漬し、水洗乾燥後重量（Ｂ（ｇ））を測定する。こ
の際の重量減（Ａ−Ｂ （： ｇ ’））が少ないほど
封孔は進行している。The degree of sealing was evaluated using the following acidic sulfite aqueous solution method. That is, anhydrous sulfite aqueous solution (1 og/i?
) to pH 3 by adding acetic acid aqueous solution (20 to 40 mg/J).
, 6-3°8, and further adjusted to pH 2 with sulfuric acid (6N).
・Prepare the test solution marked 6. Test piece (area 5aI11
) is immersed in 50'/TlID nitric acid (18 to 22°C) for 10 minutes, then washed with water and dried, and the weight (A(g))e is measured. A test piece was placed in the above test solution heated to 90-92℃ for 20 minutes.
After soaking in water and drying, measure the weight (B (g)). The smaller the weight loss (A-B (: g')) at this time, the more the sealing progresses.
なお、封孔度を次式で定義した。In addition, the degree of sealing was defined by the following formula.
式中ムｏ 、 Ｂｏ 、 Ｓｏは未封孔の試験片を用い
た値である。In the formula, O, Bo, and So are values obtained using an unsealed test piece.
試験片は９９・９９チ純度の０・３ｍｍ厚さのアルミニ
ウム板を用い、蓚酸浴中で陽極酸化を施して厚さ３μｍ
、１０μｍ、１５μｍの酸化アルミナ皮膜を形成し、加
圧水蒸気（＋ａｔｍ）中で封孔処理した。封孔度は水蒸
気処理時間によって変化させ、上記方法で測定した。さ
らに試験片は所定の温度（２０℃おきに１００〜ｓｏｏ
”ｃ）で１時間加熱した後、１ｍｏｌ／ｄのＮａ１ｌ水
溶液中で、炭素棒を対向電極とし、１・６ｖの電圧を印
加した。クラックがある場合、Ｈ２Ｏの電気分解により
気泡が発生するので気泡発生の有無により、クラック発
生の有無を判定した０その結果全第１図に示す。陽極酸
化アルミナ皮膜が厚くても、その封孔度′ｆ：４０チ以
下にすることにより、クラック発生温度を３００’Ｃ以
上まで向上させることが可能となった。The test piece was a 0.3 mm thick aluminum plate with 99.99% purity, and was anodized in an oxalic acid bath to a thickness of 3 μm.
, 10 μm, and 15 μm alumina oxide films were formed and sealed in pressurized steam (+ATM). The degree of sealing was varied depending on the steam treatment time and was measured by the method described above. Furthermore, the test piece was heated to a predetermined temperature (100 to soo every 20°C).
After heating for 1 hour in ``c), a voltage of 1.6 V was applied using a carbon rod as a counter electrode in a 1 mol/d Na1 aqueous solution.If there were cracks, bubbles would be generated due to electrolysis of H2O. The presence or absence of crack generation was determined based on the presence or absence of air bubbles.The results are shown in Figure 1.Even if the anodic oxidation alumina film is thick, by keeping its sealing degree f: 40 inches or less, the crack generation temperature can be reduced. It became possible to improve the temperature to 300'C or more.
一般に封孔度が低い陽極酸化アルミナは耐蝕性が劣ると
いわれているが、ａ−８ｉ太陽電池用基板として使用す
る場合、封孔度４０％以下でも実用上問題なく、未封孔
処理基板を用いた場合でさえ、６０℃、９６％ＲＨ条件
下に２０ｏＯ時間放置しておいても実用上、何ら問題は
生じなかった。これは未封孔のポアーをａ−８ｉ太陽電
池で覆うために、耐蝕性が向上していると考えられる。It is generally said that anodized alumina with a low sealing degree has poor corrosion resistance, but when used as a substrate for A-8I solar cells, there is no practical problem even with a sealing degree of 40% or less, and an unsealed substrate can be used. Even when used, no problems were caused in practice even if it was left for 200 hours under conditions of 60° C. and 96% RH. This is thought to be due to the fact that the unsealed pores are covered with the A-8i solar cells, resulting in improved corrosion resistance.
従来、陽極酸化アルミナ層が薄い場合には、封孔度が４
０チよシ大きくても、クラック発生温度が３００ ’Ｃ
以上で耐熱上問題のない場合もあったが、これらの基板
に関しても、封孔度を４０％以下にすることによって、
さらに耐熱性が向上し信頼性の向上が期待される。Conventionally, when the anodized alumina layer is thin, the sealing degree is 4.
Even if it is larger than 0, the crack generation temperature is 300'C.
There were cases in which there were no problems in terms of heat resistance with the above, but even for these substrates, by reducing the degree of sealing to 40% or less,
Furthermore, heat resistance is improved and reliability is expected to be improved.
作用
このように陽極酸化アルミナ皮膜の封孔度ｔ−４０チ以
下におさえたＡｌ／陽極酸化アルミナ基板は３００℃以
上までの加熱が可能となる。この基板を用いて加熱温度
３００℃に近い２８０’Ｃ，でａ −８１太陽電池を形
成すると、２００ルックス白色螢光灯下での短絡電流が
５％増加した。これは良質のａ−８ｉの堆積が可能にな
ったことに加えて、高温形成により透光性電極の光透過
率の向上の相乗効果によるものと考えられる。Function: An Al/anodized alumina substrate in which the sealing degree of the anodized alumina film is kept below t-40 can be heated up to 300° C. or higher. When an A-81 solar cell was formed using this substrate at a heating temperature of 280'C, which is close to 300C, the short circuit current under a 200 lux white fluorescent lamp increased by 5%. This is considered to be due to the synergistic effect of improving the light transmittance of the transparent electrode due to high temperature formation in addition to the ability to deposit high-quality a-8i.
実施例
以下、本発明の一実施例を添付図面にもとづいて説明す
る。Embodiment Hereinafter, one embodiment of the present invention will be described based on the accompanying drawings.
第２図において１は厚さ０．３ｍｍの純度９９．９９チ
アルミニウム板であり、２は蓚酸浴中で陽極酸化して４
ａｔｌｌｌの加圧水蒸気中で封孔処理した封孔度４０％
以下の陽極酸化アルミナ皮膜であり、アルミニウム表面
全絶縁化している。３は金属からなる第１電極であり、
ステンレス鋼、クロム、チタン等の金属薄膜である。４
はａ−８ｉ層であり、ｐ層、１層、ｎ層より構成されて
いる。５は透光性の第２電極であシ、６重量係のＳｎＯ
２を含有するＩｎ２Ｏ３薄膜により構成されている。In Fig. 2, 1 is a 99.99 purity thialuminum plate with a thickness of 0.3 mm, and 2 is anodized in an oxalic acid bath.
Sealing degree 40% after sealing in pressurized steam of atll
This is the anodized alumina film shown below, which completely insulates the aluminum surface. 3 is a first electrode made of metal;
It is a thin metal film made of stainless steel, chromium, titanium, etc. 4
is an a-8i layer, which is composed of a p layer, a 1 layer, and an n layer. 5 is a light-transmitting second electrode, 6 is SnO of weight ratio.
It is composed of an In2O3 thin film containing In2O3.
この第２図は複数の薄膜太陽電池を共通の基板上に集積
したものであり、基板はその表面の陽極酸化アルミナ皮
膜で電気的な絶縁が確保されている。しかも陽極酸化ア
ルミナ皮膜の封孔度’（ｚ４０チ以下にしているため３
００℃以上の耐熱性をもつａ−Ｓｉ太陽電池の堆積温度
に十分耐えることができる。FIG. 2 shows a plurality of thin film solar cells integrated on a common substrate, and the substrate has an anodized alumina film on its surface to ensure electrical insulation. Moreover, the sealing degree of the anodic oxidized alumina film is 3.
It can sufficiently withstand the deposition temperature of an a-Si solar cell having a heat resistance of 00° C. or more.
発明の効果
以上のように本発明によれば、ム１／陽極酸化アルミナ
皮膜からなる太陽電池用基板の陽極酸化アルミナの封孔
度ｉ４０％以下にすることにより、基板の耐熱性を向上
させることが可能であるばかりでなく、封孔処理時間の
短縮化、あるいは、封孔処理工程の削除が可能となり、
製造時間の短縮や製造コストダウン等の利点が大きい。Effects of the Invention As described above, according to the present invention, the heat resistance of the substrate can be improved by reducing the sealing degree i of the anodized alumina of the solar cell substrate made of the Mu1/anodized alumina film to 40% or less. Not only is it possible to do this, but it also makes it possible to shorten the sealing time or eliminate the sealing process.
It has great advantages such as shortening manufacturing time and reducing manufacturing costs.
また、従来の７層％以上の封孔度となるよう封孔処理工
程したム１／陽極酸化アルミナ皮膜基板では陽極酸化ア
ルミナ皮膜層を薄くすることによって、耐熱性を向上さ
せていたが、陽極酸化アルミナ皮膜を薄くした場合、ア
ルミニウム、またはアルミニウム合金板中の不純物（特
にＳｉ 、 Ｆｅ ）が、陽極酸化アルミナ中の欠陥と
なり、絶縁不良の発生をひき起こすために、高純度のア
ルミニウム、またはＦｅ 、 Ｓｉ ｆ含有しないアル
ミニウム合金を用いなければならなかった０ところが本
発明によれば、封孔度を低下させることによって耐熱性
に富む厚い陽極酸化アルミナ層を形成することが可能な
ため、Ｓｉ、Ｆｅを含有する低純度のアルミニウム板を
使用することが可能である０例えば、不純物として０・
５％Ｓｉ ＋ Ｆｅ含有する純度９９・５チアルミニウ
ム板表面に１０μｍの厚さに陽極酸化アルミナ皮膜を形
成し、ポアーを未封孔とした基板は、５００”Ｃ：の耐
熱性を有している０In addition, heat resistance has been improved by thinning the anodized alumina film layer of the Mu1/anodized alumina film substrate, which has been subjected to a sealing process to achieve a sealing degree of 7% or higher than the conventional one. When the alumina oxide film is thinned, impurities (particularly Si, Fe) in the aluminum or aluminum alloy plate become defects in the anodized alumina, causing insulation defects. However, according to the present invention, it is possible to form a thick anodized alumina layer with high heat resistance by reducing the degree of sealing. It is possible to use a low-purity aluminum plate containing Fe. For example, it is possible to use a low-purity aluminum plate containing Fe.
A 10 μm thick anodized alumina film is formed on the surface of a 99.5 thialuminium plate containing 5% Si + Fe, and the pores are left unsealed.The substrate has a heat resistance of 500"C. There is 0
第１因は陽極酸化アルミナ皮膜の封孔度〔チ〕と、クラ
ック発生温度（”Ｃ’）との関係を示す図、第２図は本
発明におけるム１４極酸化アルミナ皮膜基板を用いた集
積型薄膜太陽電池の構成図である０
１・・・・・・アルミニウムまたはアルミニウム合金、
２・・・・・・封孔度４ｏｑｂ以下の陽極酸化アルミナ
皮膜。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名＠１
図
打汎崖閂１The first factor is a diagram showing the relationship between the degree of sealing [C] of the anodized alumina film and the crack initiation temperature ("C'), and Figure 2 shows the integration using the M14 anodized alumina film substrate in the present invention. This is a block diagram of a type thin film solar cell. 01... Aluminum or aluminum alloy,
2...Anodized alumina film with a sealing degree of 4 oz or less. Name of agent: Patent attorney Toshio Nakao and 1 other person @1
Zuuchihan cliff bolt 1
Claims (1)
方の表面を、陽極酸化法による酸化アルミニウムで絶縁
化し、酸化アルミニウムを４０％以下の封孔度で封孔処
理した薄膜太陽電池用基板。A substrate for a thin film solar cell, in which at least one surface of an aluminum or aluminum alloy plate is insulated with aluminum oxide by an anodizing method, and the aluminum oxide is sealed with a sealing degree of 40% or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60126514A JPS61284971A (en) | 1985-06-11 | 1985-06-11 | Substrate for thin film solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60126514A JPS61284971A (en) | 1985-06-11 | 1985-06-11 | Substrate for thin film solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61284971A true JPS61284971A (en) | 1986-12-15 |
Family
ID=14937091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60126514A Pending JPS61284971A (en) | 1985-06-11 | 1985-06-11 | Substrate for thin film solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61284971A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4971633A (en) * | 1989-09-26 | 1990-11-20 | The United States Of America As Represented By The Department Of Energy | Photovoltaic cell assembly |
| US5558723A (en) * | 1994-04-15 | 1996-09-24 | Siemens Solar Gmbh | Thin-film solar module with electrically conductive substrate and method for the manufacture thereof |
| WO2009041657A1 (en) * | 2007-09-28 | 2009-04-02 | Fujifilm Corporation | Substrate for solar cell and solar cell |
| JP2009267336A (en) * | 2007-09-28 | 2009-11-12 | Fujifilm Corp | Substrate for solar cell and solar cell |
| JP2011159796A (en) * | 2010-02-01 | 2011-08-18 | Fujifilm Corp | Substrate with insulating layer, and thin-film solar cell |
| JP2012180592A (en) * | 2009-05-08 | 2012-09-20 | Fujifilm Corp | Al base material, metal substrate with insulating layer using the same, semiconductor element, and solar cell |
| WO2018062307A1 (en) * | 2016-09-28 | 2018-04-05 | 積水化学工業株式会社 | Flexible solar cell |
-
1985
- 1985-06-11 JP JP60126514A patent/JPS61284971A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4971633A (en) * | 1989-09-26 | 1990-11-20 | The United States Of America As Represented By The Department Of Energy | Photovoltaic cell assembly |
| US5558723A (en) * | 1994-04-15 | 1996-09-24 | Siemens Solar Gmbh | Thin-film solar module with electrically conductive substrate and method for the manufacture thereof |
| WO2009041657A1 (en) * | 2007-09-28 | 2009-04-02 | Fujifilm Corporation | Substrate for solar cell and solar cell |
| JP2009267336A (en) * | 2007-09-28 | 2009-11-12 | Fujifilm Corp | Substrate for solar cell and solar cell |
| JP2012180592A (en) * | 2009-05-08 | 2012-09-20 | Fujifilm Corp | Al base material, metal substrate with insulating layer using the same, semiconductor element, and solar cell |
| JP2011159796A (en) * | 2010-02-01 | 2011-08-18 | Fujifilm Corp | Substrate with insulating layer, and thin-film solar cell |
| WO2018062307A1 (en) * | 2016-09-28 | 2018-04-05 | 積水化学工業株式会社 | Flexible solar cell |
| JPWO2018062307A1 (en) * | 2016-09-28 | 2019-07-11 | 積水化学工業株式会社 | Flexible solar cells |
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