JPS6321888B2 - - Google Patents
Info
- Publication number
- JPS6321888B2 JPS6321888B2 JP12964780A JP12964780A JPS6321888B2 JP S6321888 B2 JPS6321888 B2 JP S6321888B2 JP 12964780 A JP12964780 A JP 12964780A JP 12964780 A JP12964780 A JP 12964780A JP S6321888 B2 JPS6321888 B2 JP S6321888B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- direction wiring
- active matrix
- mask
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011159 matrix material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】
本発明は、繰り返しパターンによつて構成され
るアクテイブ・マトリクスIC用フオト・マスク
上に位置検出用の印となるパターンを形成するこ
とに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to forming a pattern serving as a mark for position detection on a photo mask for an active matrix IC constituted by a repeating pattern.
従来、同じパターンが少なくても２回以上繰り
返えして配列されているアクテイブ・マトリクス
IC用フオト・マスクは、繰り返しパターン数が
アクテイブ・マトリクス・パネルICの大きさに
比例して増加する。例えば1.5インチ位のアクテ
イブ・マトリクス・パネルICを造るとして、一
画素の大きさが約150μｍ×100μｍとすると、第
１図に示されるように、フオト・マスクのＸ方向
１０１及びＹ方向１０２への繰り返しパターン回
数はそれぞれ約200回となる。このような大型の
フオト・マスクに於いて、３インチウエハでは２
パネル、４インチウエハでは４パネルしか、アク
テイブ・マトリクス・パネルICを造ることがで
きず、歩留りとのかね合いから、必然的にフオ
ト・マスク上の欠陥の有無を検査しなければなら
ない。しかし、繰り返しパターンが多い為欠陥場
所を発見しても、そのアドレスを見つける為にパ
ターンの端から欠陥場所まで数えなければならな
い。しかも定期的にマスク検査を行ない、更に、
工程別に数種類のマスクがあるので、このような
方法で欠陥アドレスを捜したのでは、作業能率が
著しく低下すると共に、アドレスの信頼性も低
い。またアクテイブ・マトリクス・パネルICに
於いても工程別に発生した欠陥の場所を捜す為
に、マスク検査と同じように、アドレスを端から
数えなければならない。従つて、フオト・マスク
及びパネルIC上での欠陥場所のアドレスを捜す
ことが困難である為に、その結果パターンの修
正、完成品の電特解析及び量産性などの問題が多
数発生する。 Conventionally, active matrices are arranged in which the same pattern is repeated at least twice or more.
In IC photo masks, the number of repeated patterns increases in proportion to the size of the active matrix panel IC. For example, if a 1.5-inch active matrix panel IC is to be manufactured, and the size of one pixel is approximately 150 μm x 100 μm, the photo mask will be The number of repetitions of each pattern is approximately 200 times. In such a large photo mask, a 3-inch wafer requires 2
On a 4-inch wafer, only four panels can be made into active matrix panel ICs, and due to yield considerations, it is necessary to inspect the photo masks for defects. However, since there are many repeated patterns, even if a defective location is found, it is necessary to count from the end of the pattern to the defective location in order to find its address. In addition, we conduct regular mask inspections, and
Since there are several types of masks for each process, searching for defective addresses using this method will significantly reduce work efficiency and address reliability. Also, in active matrix panel ICs, in order to find the location of defects that occur during each process, addresses must be counted from the end, similar to mask inspection. Therefore, it is difficult to find the address of the defective location on the photo mask and panel IC, resulting in many problems such as pattern correction, electrical characteristic analysis of the finished product, and mass production.
本発明はかかる欠点を除去したもので、その目
的はフオト・マスク上の繰り返しパターン・アド
レスを、それぞれ簡単に見つける方法を提供する
ものである。 The present invention eliminates such drawbacks and its purpose is to provide a method for easily finding each repeating pattern address on a photo mask.
以下実施例に基づいて詳しく説明する。 A detailed explanation will be given below based on examples.
第２図は本発明による第一の実施例である。図
中２０１はパターンであり、実際のパターンとは
異り、本発明を説明する為に略して描いたもので
ある。また、マスク全体を描くと大きくなるので
四角について示した。図に示されるように、Ｘ方
向Ｙ方向に形成される繰返しパターン上以外のマ
スク上に、繰り返しパターンと対になるように印
として数字を、左右、上下にそれぞれパターンニ
ングしたものである。また、工程別にそれぞれの
フオト・マスクについても同様の数字をパターン
ニングするものである。 FIG. 2 shows a first embodiment according to the invention. In the figure, 201 is a pattern, which is different from an actual pattern and is drawn for the purpose of explaining the present invention. Also, since drawing the entire mask would be large, a square is shown. As shown in the figure, numbers are patterned horizontally, vertically, and vertically on a mask other than the repetitive pattern formed in the X and Y directions as marks to pair with the repetitive pattern. Further, similar numbers are patterned on each photo mask for each process.
本実施例に於いては、繰り返しパターンが形成
されていないフオト・マスク上に印となるパター
ンを形成したが、それに限るものではなく、繰り
返しパターン上に形成することも可能である。ま
た印となるパターンとして、数字を１〜200番ま
で順番に繰り返しパターンと対にして形成したが
それに限るものではなく、任意の間隔を設けてそ
れぞれに印となるパターンを形成することも可能
である。更に印となるパターンは数字に限らな
い。 In this embodiment, the mark pattern was formed on a photo mask on which no repeating pattern was formed, but the mark pattern is not limited thereto, and it is also possible to form it on a repeating pattern. In addition, although the marking pattern was formed by pairing the numbers 1 to 200 with a repeating pattern in order, it is not limited to this, and it is also possible to form a marking pattern for each with arbitrary intervals. be. Furthermore, patterns that serve as marks are not limited to numbers.
本発明による効果は、フオト・マスクの検査の
時に、パターン・アドレスが簡単にわかることで
修正が間違いなく正確に行うことができると共に
作業能率が向上する。またパネルICに於いても
電特によつて発見された欠陥場所を捜すことが大
変容易になる。 The effect of the present invention is that when inspecting a photo mask, since the pattern address can be easily known, corrections can be made accurately and work efficiency is improved. Also, in panel ICs, it becomes very easy to locate defects discovered by electricians.
第１図は従来のアクテイブ・マトリクス・マス
クの概略図である。第２図は本発明による第１の
実施例である。
FIG. 1 is a schematic diagram of a conventional active matrix mask. FIG. 2 shows a first embodiment according to the present invention.
Claims (1)
パターン化されてなるアクテブマトリクスパネル
用フオトマスクにおいて、該行方向配線及び列方
向配線の繰返しパターンの順番を示す認識数字又
は符号パターンを設け、該行方向配線の認識数字
又は符号パターンのいずれか一つは該列方向配線
の認識数字又は符号パターンのいずれか一つと同
一であることを特徴とするアクテブマトリクスパ
ネル用フオトマスク。1. In a photomask for an active matrix panel in which row-direction wiring and column-direction wiring are patterned in a matrix, a recognition number or code pattern indicating the order of the repeating pattern of the row-direction wiring and column-direction wiring is provided, and the row-direction wiring is patterned in a matrix. 1. A photomask for an active matrix panel, wherein any one of the recognition numbers or code pattern of the wiring is the same as any one of the recognition numbers or code pattern of the column direction wiring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12964780A JPS5754318A (en) | 1980-09-18 | 1980-09-18 | Active matrix mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12964780A JPS5754318A (en) | 1980-09-18 | 1980-09-18 | Active matrix mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5754318A JPS5754318A (en) | 1982-03-31 |
| JPS6321888B2 true JPS6321888B2 (en) | 1988-05-10 |
Family
ID=15014682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12964780A Granted JPS5754318A (en) | 1980-09-18 | 1980-09-18 | Active matrix mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5754318A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01222980A (en) * | 1988-03-02 | 1989-09-06 | Fujitsu Ltd | Thermal printer and 2-ply heat-sensitive paper used therefor |
| JP5102989B2 (en) * | 2006-08-08 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
| CN107329365B (en) * | 2017-05-31 | 2018-10-12 | 泰州市西陵纺机工具厂 | A kind of measurement method of mask pattern |
-
1980
- 1980-09-18 JP JP12964780A patent/JPS5754318A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5754318A (en) | 1982-03-31 |
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