JPS5754318A - Active matrix mask - Google Patents

Active matrix mask

Info

Publication number
JPS5754318A
JPS5754318A JP12964780A JP12964780A JPS5754318A JP S5754318 A JPS5754318 A JP S5754318A JP 12964780 A JP12964780 A JP 12964780A JP 12964780 A JP12964780 A JP 12964780A JP S5754318 A JPS5754318 A JP S5754318A
Authority
JP
Japan
Prior art keywords
active matrix
pattern
matrix mask
constitution
mark
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12964780A
Other languages
Japanese (ja)
Other versions
JPS6321888B2 (en
Inventor
Yasuo Katsuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP12964780A priority Critical patent/JPS5754318A/en
Publication of JPS5754318A publication Critical patent/JPS5754318A/en
Publication of JPS6321888B2 publication Critical patent/JPS6321888B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To increase the efficiency of work and improve the reliability of an address by a method wherein a pattern to be a mark for detecting a position is formed on a photomask for active matrix IC formed of a repeated pattern. CONSTITUTION:On the mask other than that on the repeated pattern formed in the directions X and Y, a numeral is put, as the mark, on the right and left sides and on the upper and lower sides of the repeated pattern so as to make a pair with the latter. By this constitution, the efficiency of the work including the modification of the pattern and the analysis of a completed article is improved.
JP12964780A 1980-09-18 1980-09-18 Active matrix mask Granted JPS5754318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12964780A JPS5754318A (en) 1980-09-18 1980-09-18 Active matrix mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12964780A JPS5754318A (en) 1980-09-18 1980-09-18 Active matrix mask

Publications (2)

Publication Number Publication Date
JPS5754318A true JPS5754318A (en) 1982-03-31
JPS6321888B2 JPS6321888B2 (en) 1988-05-10

Family

ID=15014682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12964780A Granted JPS5754318A (en) 1980-09-18 1980-09-18 Active matrix mask

Country Status (1)

Country Link
JP (1) JPS5754318A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01222980A (en) * 1988-03-02 1989-09-06 Fujitsu Ltd Thermal printer and 2-ply heat-sensitive paper used therefor
JP2008041982A (en) * 2006-08-08 2008-02-21 Renesas Technology Corp Method for manufacturing semiconductor device
CN107329365A (en) * 2017-05-31 2017-11-07 邹彦双 A kind of measuring method of mask pattern

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01222980A (en) * 1988-03-02 1989-09-06 Fujitsu Ltd Thermal printer and 2-ply heat-sensitive paper used therefor
JP2008041982A (en) * 2006-08-08 2008-02-21 Renesas Technology Corp Method for manufacturing semiconductor device
CN107329365A (en) * 2017-05-31 2017-11-07 邹彦双 A kind of measuring method of mask pattern

Also Published As

Publication number Publication date
JPS6321888B2 (en) 1988-05-10

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