JPS6321850A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To increase the thickness of a flattened insulating film and uniformize the film, and to prevent it from cracking by forming the insulating film before removing a photoresist and dipping it in a liquid material. CONSTITUTION:With a photoresist 3 as a mask a gate electrode 2 is etched. Then, the edged electrode 2 is dipped, for example, together with the photoresist 3 in a liquid material, such as an SOG to form a flattened insulating film 4, and is heat treated. Further, after the photoresist is removed to flatten the film 4, an insulating film 5 made of PSG or BPSG is formed, for example, by depositing by a CVD method, heat treated, and flattened. That is, the film is formed by dipping it in the liquid material to increase the thickness of the film and to uniformize it, thereby preventing it from cracking.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device, and particularly to a method of manufacturing a semiconductor device in which wiring or electrodes are formed on a semiconductor substrate.

[Prior Art] FIG. 2 is a cross-sectional view showing the main part of the manufacturing process of a semiconductor device according to the prior art.

In the figure, a gate electrode 2 is formed on a silicon substrate 1 by, for example, deposition using the CVD method, a resist is applied thereon, and a photoresist 3 is produced by photolithography or the like (see FIG. 2(a)).

Next, the gate electrode 2 is etched using the photoresist 3 as a mask (see FIG. 2(b)), and then the photoresist is removed (see FIG. 2(c)).

Furthermore, for example, SOG (Spin On Gl
A flattened insulating film 4 is formed by spin-coating a liquid material such as (as) or the like, and the flattened insulating film 4 is stabilized by heat treatment (see W in FIG. 2(d)).

Finally, for example PSG (Phospho Si11
cate Glass) membrane or BPSG (Bo
rophospho 5ilicateGlass)
An insulating film 5 such as the one shown in FIG.
(see e)), and after heat treatment, it is flattened.

FIG. 3 shows the flattened insulating film 4 shown in FIG. 2(d) above.
This is an enlarged view of the surrounding area, showing a crack 6 occurring at a corner of the flattened insulating film 4.

[Problems to be Solved by the Invention] In the conventional semiconductor device manufacturing method as described above, the planarizing insulating film 4 is formed by spin coating, so it is difficult to increase the thickness of the planarizing insulating film 4. Further, as shown in FIG. 3, the film thickness was uneven because sufficient planarization was not achieved. Therefore, due to the thermal stress caused by the heat treatment during spin coating of the flattened insulating film 4, the flattened insulating film 4 as shown in FIG.
Cracks are likely to occur at the corners of the
This causes a decrease in the insulation resistance and moisture resistance of the insulating layer, and has an adverse effect on the electrical characteristics of the semiconductor device.

This invention was made to solve this problem, and provides a method for manufacturing a semiconductor device that has good electrical characteristics by increasing the thickness and uniformity of the planarizing insulating film and preventing the occurrence of cracks. The purpose is to obtain.

[Means for Solving the Problems] The semiconductor device manufacturing apparatus according to the present invention forms a flattened insulating film by immersing it in a liquid material before removing the photoresist.

[Function] In the present invention, since the planarized insulating film is formed by immersion in a liquid material, the planarized insulating film can be made thicker and more uniform, and cracks can be prevented from occurring.

[Embodiment of the Invention] FIG. 1 is a sectional view showing the main part of the manufacturing process of a semiconductor device according to an embodiment of the invention.

In the figure, numerals 1 to 5 are the same or equivalent parts as in the prior art.

Figures 1(a) and (b) show the prior art; Figure 2(a) shows the prior art.
) and (b), the gate electrode 2 is etched using the photoresist 3 as a mask.

Next, the etched gate electrode 2 is covered with a photoresist 3.
At the same time, a flattened insulating film 4 is formed by dipping 13 in a liquid abrasive such as SOG, and heat treatment is performed (see FIG. 1 (C).
)reference). Furthermore, after removing the photoresist and planarizing the planarizing insulating film 4 (see FIG. 1(d)), an insulating film 5 of PSG or BPSG was formed by depositing, for example, by a CVD method, and heat treatment was performed. After that, it is flattened (see FIG. 1(e)).

Incidentally, although the above embodiment has been described as a method for forming an insulating film in a semiconductor device, it goes without saying that this dipping method can be used in other manufacturing methods in which spin coating is inconvenient.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view showing the main part of the manufacturing process of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing the main part of the manufacturing process of a semiconductor device according to the prior art. FIG. 3 is an enlarged view of the process of forming a flattened insulating film in the conventional manufacturing process. In the drawings, the same reference numerals indicate the same or corresponding parts; 1 is a silicon substrate, 2 is a gate electrode, 3 is a photoresist, 4 is a flattening insulating film, 5 is an insulating film, and 6 is a crack. 9 substitutes Masuo Oiwa-he bolt + S-ri

Claims (3)

[Claims] (1) A method for manufacturing a semiconductor device having a semiconductor substrate, a wiring or an electrode formed on the substrate, and an interlayer film formed between these, wherein a layer for the wiring or electrode is formed on the substrate. forming a photoresist on the wiring or electrode layer in order to pattern the wiring or electrode layer; etching the exposed wiring or electrode layer using the photoresist as a mask; immersing the wires or electrodes in a desired pattern together with the photoresist in a liquid material to form an interlayer insulating film between the wires or electrodes; removing the photoresist; A method for manufacturing a semiconductor device, comprising an electrode and a step of forming an insulating film on the interlayer insulating film. (2) The liquid material is spin-on glass (Spin-on glass).
2. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is manufactured using a semiconductor device (OnGlass). (3) The method for manufacturing a semiconductor device according to claim 1, wherein the liquid material is polyimide.